Works matching IS 03615235 AND DT 2016 AND VI 45 AND IP 2
Results: 39
Electromechanical Breakdown of Barrier-Type Anodized Aluminum Oxide Thin Films Under High Electric Field Conditions.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 892, doi. 10.1007/s11664-015-4195-5
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Performance of a Polymer-Based Sensor Package at Extreme Temperature.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1184, doi. 10.1007/s11664-015-4198-2
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Optical, Dielectric Characterization and Impedance Spectroscopy of Ni-Substituted MgTiO Thin Films.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 899, doi. 10.1007/s11664-015-4209-3
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The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 859, doi. 10.1007/s11664-015-4210-x
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Ab Initio Calculations and Experimental Properties of CuAlGaTe for Photovoltaic Solar Cells.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1035, doi. 10.1007/s11664-015-4215-5
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Effects of Sn Substitution on Thermoelectric Properties of GeSbTe.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1077, doi. 10.1007/s11664-015-4221-7
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Titanium Oxide Adhesion Layer for High Temperature Annealed Si/SiN/TiO/Pt/LiCoO Battery Structures.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 910, doi. 10.1007/s11664-015-4223-5
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Electric Modulus, Scaling and Modeling of Dielectric Properties for Mn-Si Co-substituted Mn-Zn Ferrites.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 917, doi. 10.1007/s11664-015-4224-4
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Relaxor Behavior and Dielectric Relaxation in Lead-Free Solid Solutions of (1 − x)(BiNaTiO)- x(SrNbO).
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 928, doi. 10.1007/s11664-015-4226-2
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Enhancement of the Electrical Properties of CVD-Grown Graphene with Ascorbic Acid Treatment.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1160, doi. 10.1007/s11664-015-4229-z
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Structural Dependence of Microwave Dielectric Properties of Spinel-Structured LiZnTiO Ceramic: Crystal Structure Refinement and Raman Spectroscopy Study.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 940, doi. 10.1007/s11664-015-4232-4
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Nitrogen Doping Position-Dependent Rectification of Spin-Polarized Current and Realization of Multifunction in Zigzag Graphene Nanoribbons with Asymmetric Edge Hydrogenation.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1165, doi. 10.1007/s11664-015-4233-3
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Structural, Optical and Electrical Characteristics of a LaKGaVO System.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 947, doi. 10.1007/s11664-015-4235-1
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Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-HgCdTe Grown by Molecular-Beam Epitaxy.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 881, doi. 10.1007/s11664-015-4239-x
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Al Incorporation at All Growth Stages of AlGaN Epilayers Using SiN Treatment.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 872, doi. 10.1007/s11664-015-4240-4
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Charged Defects-Induced Resistive Switching in SbTe Memristor.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1154, doi. 10.1007/s11664-015-4241-3
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Frequency and Temperature Dependence of Dielectric and Electrical Properties of Sn-Doped Lead Calcium Iron Niobate.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 959, doi. 10.1007/s11664-015-4244-0
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A Theoretical Model of Thermoelectric Transport Properties for Electrons and Phonons.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1115, doi. 10.1007/s11664-015-4245-z
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Polymers Containing Diphenylvinyl-Substituted Indole Rings as Charge-Transporting Materials for OLEDs.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1210, doi. 10.1007/s11664-015-4246-y
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High Dielectric, Piezoelectric, Upconversion Photoluminescence and Low-Temperature Sensing Properties in BaSrTiO-BaZrTiO:Ho/Yb Ceramics.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 970, doi. 10.1007/s11664-015-4247-x
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Identifying and Engineering the Electronic Properties of the Resistive Switching Interface.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1142, doi. 10.1007/s11664-015-4249-8
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Power Loss Mechanisms in Indium-Rich InGaN Samples.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 867, doi. 10.1007/s11664-015-4250-2
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Structure and Thermoelectric Properties of Te-Ag-Ge-Sb (TAGS) Materials Obtained by Reduction of Melted Oxide Substrates.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1085, doi. 10.1007/s11664-015-4251-1
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Enhanced Room Temperature Ferromagnetism by Fe Doping in ZnCuO Diluted Magnetic Semiconductors.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 976, doi. 10.1007/s11664-015-4253-z
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Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 983, doi. 10.1007/s11664-015-4255-x
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Influence of Rare-Earth Substitution on the Crystal and Electronic Properties of a LiMnO Battery Cathode.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 989, doi. 10.1007/s11664-015-4256-9
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Synthesis, Transport and Magnetic Properties of Ba-Co-Ge Clathrates.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1094, doi. 10.1007/s11664-015-4259-6
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An Insight into Sodiation of Antimony from First-Principles Crystal Structure Prediction.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 999, doi. 10.1007/s11664-015-4260-0
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Electrical Properties of PVP-SiO-TMSPM Hybrid Thin Films as OFET Gate Dielectric.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1201, doi. 10.1007/s11664-015-4262-y
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Microwave Dielectric Properties of BaSrLaTiO Ceramic with LaO-BO-TiO Doping.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1011, doi. 10.1007/s11664-015-4263-x
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Effect of Different Al/Si Ratios on the Structure and Energy Storage Properties of Strontium Barium Niobate-Based Glass-Ceramics.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1017, doi. 10.1007/s11664-015-4264-9
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Thermoelectric Properties of FeVAl and FeVMAl (M = Mo, Nb, Ta) Alloys: First-Principles Calculations.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1101, doi. 10.1007/s11664-015-4265-8
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Effect of Ce Doping on Microwave Absorption Properties of PrFe Alloy.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1023, doi. 10.1007/s11664-015-4267-6
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Effect of the Chalcogenide Element Doping on the Electronic Properties of CoFeAl Heusler Alloys.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1028, doi. 10.1007/s11664-015-4268-5
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Thermodynamic Assessment of the Bi-Ni and Bi-Ni- X ( X = Ag, Cu) Systems.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1041, doi. 10.1007/s11664-015-4272-9
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Thickness-Dependent Electrocaloric Effect in PbLaZrTiO Films Grown by Sol-Gel Process.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1057, doi. 10.1007/s11664-015-4285-4
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Structural, Electrical, and Dielectric Properties of Multiferroic-Spinel Ferrite Composites.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1065, doi. 10.1007/s11664-015-4286-3
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Ultraviolet Photoconductive Detectors Based on A-Plane ZnO Film Grow by Hydrothermal Method.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1073, doi. 10.1007/s11664-015-4289-0
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Consistency in Al/CuPc/ n-Si Heterojunction Diode Parameters Extracted Using Different Techniques.
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- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1175, doi. 10.1007/s11664-015-4163-0
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