Works matching IS 03615235 AND DT 2015 AND VI 44 AND IP 9
Results: 36
Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2990, doi. 10.1007/s11664-015-3703-y
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- Article
Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3002, doi. 10.1007/s11664-015-3713-9
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A Novel Method for In Situ Estimation of HgCdTe Etch Rate in Real Time.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3007, doi. 10.1007/s11664-015-3714-8
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The Future of Infrared; III-Vs or HgCdTe?
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2969, doi. 10.1007/s11664-015-3717-5
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Crystallographic Characterization of AgGaTe, AgAlTe, and Ag(Ga,Al)Te Grown by Closed-Space Sublimation.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3013, doi. 10.1007/s11664-015-3733-5
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Interview with Paul W. Kruse on the Early History of HgCdTe, Conducted on October 22, 1980.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2955, doi. 10.1007/s11664-015-3737-1
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State-of-the-Art HgCdTe at Raytheon Vision Systems.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2977, doi. 10.1007/s11664-015-3740-6
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Analysis of Defects on Chemically-Treated CdZnTe Surfaces.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3018, doi. 10.1007/s11664-015-3742-4
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A Novel Method to Obtain Higher Deposition Rates of CdTe Using Low Temperature LPCVD for Surface Passivation of HgCdTe.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3023, doi. 10.1007/s11664-015-3743-3
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Evolution of Kinetically Limited Lattice Relaxation and Threading Dislocations in Temperature-Graded ZnSe/GaAs (001) Metamorphic Heterostructures.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3030, doi. 10.1007/s11664-015-3745-1
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Theoretical Aspects of Minority Carrier Extraction in Unipolar Barrier Infrared Detectors.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3036, doi. 10.1007/s11664-015-3756-y
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- Article
Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3044, doi. 10.1007/s11664-015-3764-y
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Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3056, doi. 10.1007/s11664-015-3767-8
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Fabrication and Simulation of InGaAs Field-Effect Transistors with II-VI Tunneling Insulators.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3064, doi. 10.1007/s11664-015-3769-6
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- Article
A New nBn IR Detection Concept Using HgCdTe Material.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3069, doi. 10.1007/s11664-015-3821-6
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Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3076, doi. 10.1007/s11664-015-3822-5
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As-Received CdZnTe Substrate Contamination.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3082, doi. 10.1007/s11664-015-3823-4
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Linear-Mode HgCdTe Avalanche Photodiodes for Photon-Counting Applications.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3092, doi. 10.1007/s11664-015-3824-3
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Development of MBE HgCdTe for HDVIP Focal-Plane Arrays.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3102, doi. 10.1007/s11664-015-3825-2
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Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II-VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3108, doi. 10.1007/s11664-015-3827-0
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Minimization of the Surface Leakage Currents of High-Resistivity (Cd,Mn)Te Crystal Plates.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3116, doi. 10.1007/s11664-015-3828-z
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Single-Crystal CdTe Homojunction Structures for Solar Cell Applications.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3118, doi. 10.1007/s11664-015-3829-y
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Characterization of CdTe Growth on GaAs Using Different Etching Techniques.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3124, doi. 10.1007/s11664-015-3830-5
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- Article
Dense Array Effects in SWIR HgCdTe Photodetecting Arrays.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3134, doi. 10.1007/s11664-015-3831-4
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Latest Developments in Long-Wavelength and Very-Long-Wavelength Infrared Detection with p-on- n HgCdTe.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3144, doi. 10.1007/s11664-015-3851-0
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High-Performance MWIR HgCdTe on Si Substrate Focal Plane Array Development.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3151, doi. 10.1007/s11664-015-3852-z
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Modeling and Characterization of MTF and Spectral Response at Small Pitch on Mercury Cadmium Telluride.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3157, doi. 10.1007/s11664-015-3857-7
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Complex Behavior of Time Response of HgCdTe HOT Photodetectors.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3163, doi. 10.1007/s11664-015-3858-6
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(Cd,Mn)Te Crystal Plates for Radiation Detectors: Electrical Contacts and Surface Passivation.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3174, doi. 10.1007/s11664-015-3864-8
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MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3180, doi. 10.1007/s11664-015-3876-4
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Effects of Chemomechanical Polishing on CdZnTe X-ray and Gamma-Ray Detectors.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3194, doi. 10.1007/s11664-015-3881-7
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Quantum Dot Channel (QDC) Field Effect Transistors (FETs) and Floating Gate Nonvolatile Memory Cells.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3188, doi. 10.1007/s11664-015-3895-1
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In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3202, doi. 10.1007/s11664-015-3913-3
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Use of Sub-bandgap Illumination to Improve Radiation Detector Resolution of CdZnTe.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3207, doi. 10.1007/s11664-015-3926-y
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Foreword.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2953, doi. 10.1007/s11664-015-3955-6
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- Article
Modulation Transfer Function Consequences of Planar Dense Array Geometries in Infrared Focal Plane Arrays.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2981, doi. 10.1007/s11664-015-3701-0
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