Works matching IS 03615235 AND DT 2015 AND VI 44 AND IP 9

Results: 36

Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2990, doi. 10.1007/s11664-015-3703-y

By:

Zhang, J.;
Umana-Membreno, G.A.;
Gu, R.;
Lei, W.;
Antoszewski, J.;
Dell, J.M.;
Faraone, L.

Publication type:

Article

Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3002, doi. 10.1007/s11664-015-3713-9

By:

Wenisch, J.;
Schirmacher, W.;
Wollrab, R.;
Eich, D.;
Hanna, S.;
Breiter, R.;
Lutz, H.;
Figgemeier, H.

Publication type:

Article

A Novel Method for In Situ Estimation of HgCdTe Etch Rate in Real Time.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3007, doi. 10.1007/s11664-015-3714-8

By:

Apte, Palash

Publication type:

Article

The Future of Infrared; III-Vs or HgCdTe?

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2969, doi. 10.1007/s11664-015-3717-5

By:

Kinch, Michael

Publication type:

Article

Crystallographic Characterization of AgGaTe, AgAlTe, and Ag(Ga,Al)Te Grown by Closed-Space Sublimation.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3013, doi. 10.1007/s11664-015-3733-5

By:

Uruno, Aya;
Usui, Ayaka;
Inoue, Tomohiro;
Takeda, Yuji;
Kobayashi, Masakazu

Publication type:

Article

Interview with Paul W. Kruse on the Early History of HgCdTe, Conducted on October 22, 1980.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2955, doi. 10.1007/s11664-015-3737-1

By:

Reine, Marion

Publication type:

Article

State-of-the-Art HgCdTe at Raytheon Vision Systems.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2977, doi. 10.1007/s11664-015-3740-6

By:

Fulk, C.;
Radford, W.;
Buell, D.;
Bangs, J.;
Rybnicek, K.

Publication type:

Article

Analysis of Defects on Chemically-Treated CdZnTe Surfaces.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3018, doi. 10.1007/s11664-015-3742-4

By:

Hossain, A.;
Bolotnikov, A.;
Camarda, G.;
Cui, Y.;
Gul, R.;
Kim, K.-H.;
Roy, U.;
Tong, X.;
Yang, G.;
James, R.

Publication type:

Article

A Novel Method to Obtain Higher Deposition Rates of CdTe Using Low Temperature LPCVD for Surface Passivation of HgCdTe.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3023, doi. 10.1007/s11664-015-3743-3

By:

Banerjee, Sneha;
Dahal, Rajendra;
Bhat, Ishwara

Publication type:

Article

Evolution of Kinetically Limited Lattice Relaxation and Threading Dislocations in Temperature-Graded ZnSe/GaAs (001) Metamorphic Heterostructures.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3030, doi. 10.1007/s11664-015-3745-1

By:

Kujofsa, T.;
Ayers, J.

Publication type:

Article

Theoretical Aspects of Minority Carrier Extraction in Unipolar Barrier Infrared Detectors.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3036, doi. 10.1007/s11664-015-3756-y

By:

Ting, David;
Soibel, Alexander;
Höglund, Linda;
Gunapala, Sarath

Publication type:

Article

Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3044, doi. 10.1007/s11664-015-3764-y

By:

Akhavan, Nima;
Jolley, Gregory;
Umana-Membreno, Gilberto;
Antoszewski, Jarek;
Faraone, Lorenzo

Publication type:

Article

Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3056, doi. 10.1007/s11664-015-3767-8

By:

Vallone, Marco;
Mandurrino, Marco;
Goano, Michele;
Bertazzi, Francesco;
Ghione, Giovanni;
Schirmacher, Wilhelm;
Hanna, Stefan;
Figgemeier, Heinrich

Publication type:

Article

Fabrication and Simulation of InGaAs Field-Effect Transistors with II-VI Tunneling Insulators.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3064, doi. 10.1007/s11664-015-3769-6

By:

Suarez, E.;
Chan, P.-Y.;
Gogna, M.;
Ayers, J.E.;
Heller, E.;
Jain, F.

Publication type:

Article

A New nBn IR Detection Concept Using HgCdTe Material.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3069, doi. 10.1007/s11664-015-3821-6

By:

Gravrand, O.;
Boulard, F.;
Ferron, A.;
Ballet, Ph.;
Hassis, W.

Publication type:

Article

Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3076, doi. 10.1007/s11664-015-3822-5

By:

Jacobs, R.;
Jaime Vasquez, M.;
Lennon, C.;
Nozaki, C.;
Almeida, L.;
Pellegrino, J.;
Arias, J.;
Taylor, C.;
Wissman, B.

Publication type:

Article

As-Received CdZnTe Substrate Contamination.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3082, doi. 10.1007/s11664-015-3823-4

By:

Benson, J.;
Bubulac, L.;
Jaime-Vasquez, M.;
Lennon, C.;
Smith, P.;
Jacobs, R.;
Markunas, J.;
Almeida, L.;
Stoltz, A.;
Arias, J.;
Wijewarnasuriya, P.;
Peterson, J.;
Reddy, M.;
Vilela, M.;
Johnson, S.;
Lofgreen, D.;
Yulius, A.;
Carmody, M.;
Hirsch, R.;
Fiala, J.

Publication type:

Article

Linear-Mode HgCdTe Avalanche Photodiodes for Photon-Counting Applications.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3092, doi. 10.1007/s11664-015-3824-3

By:

Sullivan, William;
Beck, Jeffrey;
Scritchfield, Richard;
Skokan, Mark;
Mitra, Pradip;
Sun, Xiaoli;
Abshire, James;
Carpenter, Darren;
Lane, Barry

Publication type:

Article

Development of MBE HgCdTe for HDVIP Focal-Plane Arrays.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3102, doi. 10.1007/s11664-015-3825-2

By:

Schaake, Christopher;
Strong, Roger;
Kinch, Mike;
Harris, Fred;
Robertson, Lance;
Zhao, Jun;
Aqariden, Fikri

Publication type:

Article

Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II-VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3108, doi. 10.1007/s11664-015-3827-0

By:

Jain, F.;
Chan, P.-Y.;
Lingalugari, M.;
Kondo, J.;
Suarez, E.;
Gogna, P.;
Chandy, J.;
Heller, E.

Publication type:

Article

Minimization of the Surface Leakage Currents of High-Resistivity (Cd,Mn)Te Crystal Plates.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3116, doi. 10.1007/s11664-015-3828-z

By:

Markowska, A.;
Witkowska-Baran, M.;
Kochanowska, D.;
Mycielski, A.

Publication type:

Article

Single-Crystal CdTe Homojunction Structures for Solar Cell Applications.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3118, doi. 10.1007/s11664-015-3829-y

By:

Su, Peng-Yu;
Dahal, Rajendra;
Wang, Gwo-Ching;
Zhang, Shengbai;
Lu, Toh-Ming;
Bhat, Ishwara

Publication type:

Article

Characterization of CdTe Growth on GaAs Using Different Etching Techniques.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3124, doi. 10.1007/s11664-015-3830-5

By:

Bilgilisoy, E.;
Özden, S.;
Bakali, E.;
Karakaya, M.;
Selamet, Y.

Publication type:

Article

Dense Array Effects in SWIR HgCdTe Photodetecting Arrays.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3134, doi. 10.1007/s11664-015-3831-4

By:

Wichman, A.R.;
Pinkie, B.;
Bellotti, E.

Publication type:

Article

Latest Developments in Long-Wavelength and Very-Long-Wavelength Infrared Detection with p-on- n HgCdTe.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3144, doi. 10.1007/s11664-015-3851-0

By:

Baier, N.;
Cervera, C.;
Gravrand, O.;
Mollard, L.;
Lobre, C.;
Destefanis, G.;
Bourgeois, G.;
Zanatta, J.P.;
Boulade, O.;
Moreau, V.

Publication type:

Article

High-Performance MWIR HgCdTe on Si Substrate Focal Plane Array Development.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3151, doi. 10.1007/s11664-015-3852-z

By:

Bommena, R.;
Ketharanathan, S.;
Wijewarnasuriya, P.;
Dhar, N.;
Kodama, R.;
Zhao, J.;
Buurma, C.;
Bergeson, J.;
Aqariden, F.;
Velicu, S.

Publication type:

Article

Modeling and Characterization of MTF and Spectral Response at Small Pitch on Mercury Cadmium Telluride.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3157, doi. 10.1007/s11664-015-3857-7

By:

Berthoz, J.;
Grille, R.;
Rubaldo, L.;
Gravrand, O.;
Kerlain, A.;
Pere-Laperne, N.;
Martineau, L.;
Chabuel, F.;
Leclercq, D.

Publication type:

Article

Complex Behavior of Time Response of HgCdTe HOT Photodetectors.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3163, doi. 10.1007/s11664-015-3858-6

By:

Pawluczyk, J.;
Piotrowski, J.;
Pusz, W.;
Koźniewski, A.;
Orman, Z.;
Gawron, W.;
Piotrowski, A.

Publication type:

Article

(Cd,Mn)Te Crystal Plates for Radiation Detectors: Electrical Contacts and Surface Passivation.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3174, doi. 10.1007/s11664-015-3864-8

By:

Witkowska-Baran, M.;
Kochanowska, D.;
Mycielski, A.;
Szadkowski, A.;
Juchniewicz, M.;
Kamińska, E.

Publication type:

Article

MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3180, doi. 10.1007/s11664-015-3876-4

By:

Lei, W.;
Gu, R. J.;
Antoszewski, J.;
Dell, J.;
Neusser, G.;
Sieger, M.;
Mizaikoff, B.;
Faraone, L.

Publication type:

Article

Effects of Chemomechanical Polishing on CdZnTe X-ray and Gamma-Ray Detectors.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3194, doi. 10.1007/s11664-015-3881-7

By:

Egarievwe, Stephen;
Hossain, Anwar;
Okwechime, Ifechukwude;
Gul, Rubi;
James, Ralph

Publication type:

Article

In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3202, doi. 10.1007/s11664-015-3913-3

By:

Farrell, S.;
Barnes, T.;
Metzger, W.;
Park, J.;
Kodama, R.;
Sivananthan, S.

Publication type:

Article

Quantum Dot Channel (QDC) Field Effect Transistors (FETs) and Floating Gate Nonvolatile Memory Cells.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3188, doi. 10.1007/s11664-015-3895-1

By:

Kondo, J.;
Lingalugari, M.;
Chan, P.-Y.;
Heller, E.;
Jain, F.

Publication type:

Article

Use of Sub-bandgap Illumination to Improve Radiation Detector Resolution of CdZnTe.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3207, doi. 10.1007/s11664-015-3926-y

By:

Duff, Martine;
Washington, Aaron;
Teague, Lucile;
Wright, Jonathan;
Burger, Arnold;
Groza, Michael;
Buliga, Vladimir

Publication type:

Article

Foreword.

Published in:: Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2953, doi. 10.1007/s11664-015-3955-6
Publication type:: Article

Modulation Transfer Function Consequences of Planar Dense Array Geometries in Infrared Focal Plane Arrays.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 2981, doi. 10.1007/s11664-015-3701-0

By:

Pinkie, Benjamin;
Wichman, Adam;
Bellotti, Enrico

Publication type:

Article