Works matching IS 03615235 AND DT 2015 AND VI 44 AND IP 10
Results: 110
Structure, Ferroelectric and Photoluminescence Properties of Eu-Doped CaBiTiO Multifunctional Ceramics.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3696, doi. 10.1007/s11664-015-3730-8
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Charge and Heat Transfer Mechanism in Directly Coupled CdSe-Metal Nanohybrids.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3581, doi. 10.1007/s11664-015-3766-9
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Thermoelectric Properties of Heavily Doped n-type PbYTe Compounds.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3556, doi. 10.1007/s11664-015-3775-8
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Electron-Transport Properties of a ZnMgO/ZnO Hetero Structure and the Effect of Interface Roughness and ZnMgO Thickness.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3733, doi. 10.1007/s11664-015-3776-7
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Validation of the Dynamic Recrystallization (DRX) Mechanism for Whisker and Hillock Growth on Sn Thin Films.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 4012, doi. 10.1007/s11664-015-3779-4
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In Situ Synchrotron X-ray Diffraction Measurement of the Strain Distribution in Si Die for the Embedded Substrates.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3942, doi. 10.1007/s11664-015-3780-y
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Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a BiSbTe Film Fabricated by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3334, doi. 10.1007/s11664-015-3782-9
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Phase Equilibria of the Sn-Ni-V System: The 980°C Isothermal Section and the Sn-Rich Corner at 600°C and 300°C.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3904, doi. 10.1007/s11664-015-3788-3
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Molybdenum Oxides Deposited by Modulated Pulse Power Magnetron Sputtering: Stoichiometry as a Function of Process Parameters.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3677, doi. 10.1007/s11664-015-3790-9
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Influence of the Porous Microstructure on the Elastic Properties of Sintered Ag Paste as Replacement Material for Die Attachment.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3948, doi. 10.1007/s11664-015-3791-8
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An Investigation into the Package and Printed Circuit Board Assembly Solutions of an Ultrathin Coreless Flip-Chip Substrate.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3855, doi. 10.1007/s11664-015-3794-5
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Effect of Reoriented Nanodomains on Crystal Structure and Piezoelectric Properties of Polycrystalline Ferroelectric Ceramics.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3843, doi. 10.1007/s11664-015-3795-4
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Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3481, doi. 10.1007/s11664-015-3797-2
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Modification of Chemically Exfoliated Graphene to Produce Efficient Piezoresistive Polystyrene-Graphene Composites.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3512, doi. 10.1007/s11664-015-3799-0
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Magnetic and Dielectric Property Studies in Fe- and NiFe-Based Polymer Nanocomposites.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3819, doi. 10.1007/s11664-015-3801-x
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NaBi: A Robust Material Offering Dirac Electrons for Device Applications.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3215, doi. 10.1007/s11664-015-3802-9
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Studies on Spin Orbit Splitting and Dual Mode Phonon Vibrations in ZnSSe Ternary Alloys Films with Varying Se Concentration.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3341, doi. 10.1007/s11664-015-3803-8
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Undulate Cu(111) Substrates: A Unique Surface for CVD Graphene Growth.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3550, doi. 10.1007/s11664-015-3804-7
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Thermoluminescence of β-Irradiated ZnS-ZnO Phosphors.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3477, doi. 10.1007/s11664-015-3809-2
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Influences of Strain Rate and Load Direction on the Thermo-mechanical Behavior of a Nano-Alumina-Containing Copper Alloy Bar.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3523, doi. 10.1007/s11664-015-3810-9
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Highly Transparent and Low-Resistance Indium-Free ZnO/Ag/ZnO Multilayer Electrodes for Organic Photovoltaic Devices.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3967, doi. 10.1007/s11664-015-3811-8
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Enhanced Thermoelectric Properties of Hole-Doped LuPbBaCoO Ceramics.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3545, doi. 10.1007/s11664-015-3814-5
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Investigation of Structural, Chemical, and Electrical Properties of CdTe/Back Contact Interface by TEM and XPS.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3327, doi. 10.1007/s11664-015-3816-3
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New Failure Mode of Flip-Chip Solder Joints Related to the Metallization of an Organic Substrate.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3957, doi. 10.1007/s11664-015-3817-2
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Study on the Characteristics of an Alkali-Metal Thermoelectric Power Generation System.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3534, doi. 10.1007/s11664-015-3818-1
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Structural and Magnetic Properties of Sputter-Deposited Polycrystalline Ni-Mn-Ga Ferromagnetic Shape-Memory Thin Films.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3761, doi. 10.1007/s11664-015-3819-0
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Dielectric Relaxation, Modulus Behaviour and Conduction Mechanism in NdAlO Ceramics.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3801, doi. 10.1007/s11664-015-3820-7
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Phenylvinyl-Substituted Carbazole Twin Compounds as Efficient Materials for the Charge-Transporting Layers of OLED Devices.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 4006, doi. 10.1007/s11664-015-3826-1
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Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3272, doi. 10.1007/s11664-015-3832-3
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Improving the H Gas Sensitivity of ZnO Thin Films by Modifying the Annealing Conditions.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3458, doi. 10.1007/s11664-015-3833-2
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A 100-V High-Performance SOI Trench LDMOS with Low Cell Pitch.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3388, doi. 10.1007/s11664-015-3834-1
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Space-Charge Manipulation Under Sub-bandgap Illumination in Detector-Grade CdZnTe.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3229, doi. 10.1007/s11664-015-3835-0
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Effect of Sintering Temperature on Magnetic Core-Loss Properties of a NiCuZn Ferrite for High-Frequency Power Converters.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3788, doi. 10.1007/s11664-015-3836-z
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Influence of LaNiO and LaNiMnO Buffer Layers on the Structural and Electrical Properties of BiNiMnO Thin Films.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3783, doi. 10.1007/s11664-015-3837-y
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Preparation, Characterization, and Size Control of Chemically Synthesized CdS Nanoparticles Capped with Poly(ethylene glycol).
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3367, doi. 10.1007/s11664-015-3838-x
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Synthesis of 3D Flower-Like SnO with Hierarchical Nanostructure and High Reversible Capacity as Lithium-Ion Battery Anode.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3744, doi. 10.1007/s11664-015-3840-3
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Simulation-Based Uncertainty Quantification for Additively Manufactured Cellular Structures.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 4035, doi. 10.1007/s11664-015-3841-2
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Parametric Study on Pressureless Sintering of Nanosilver Paste to Bond Large-Area (≥100 mm) Power Chips at Low Temperatures for Electronic Packaging.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3973, doi. 10.1007/s11664-015-3842-1
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Structural, Electrical, and Magnetic Properties of Mechanosynthesized (1− x)BiFeO- xBaMnO (0 ≤ x ≤ 0.15) Multiferroic System.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3811, doi. 10.1007/s11664-015-3843-0
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Enhanced Multiferroic Properties of Eu-Doped BiFeO Thin Films Derived from Rhombohedral-Tetragonal Phase Boundary.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3752, doi. 10.1007/s11664-015-3844-z
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Numerical Examination of the Performance of a Thermoelectric Cooler with Peltier Heating and Cooling.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3586, doi. 10.1007/s11664-015-3845-y
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A Comparative Study: Dynamic and Thermal Behavior of Nanocrystalline and Powder Magnetic Materials in a Power Converter Application.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3768, doi. 10.1007/s11664-015-3846-x
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Comparison of the Magnetic and Absorption Properties of Flaky Super Sendust and Sendust Alloys.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3777, doi. 10.1007/s11664-015-3847-9
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Electroactive Phase Induced BiTiO-Poly(Vinylidene Difluoride) Composites with Improved Dielectric Properties.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3710, doi. 10.1007/s11664-015-3848-8
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Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient CuZnSnS Thin-Film Solar Cells.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3380, doi. 10.1007/s11664-015-3849-7
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Evolution of Polarization Vortex Pairs in a Uniaxially Compressed Single-Crystal BaTiO Thin Film: From Initiation to Annihilation.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3795, doi. 10.1007/s11664-015-3850-1
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Orientation Dependence of Etch Pit Density in (111) and (211) CdZnTe Everson Etch.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3277, doi. 10.1007/s11664-015-3853-y
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Molybdenum, Tungsten, and Aluminium Substitution for Enhancement of the Thermoelectric Performance of Higher Manganese Silicides.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3603, doi. 10.1007/s11664-015-3854-x
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Study of Surface and Interface Roughness of GaN-Based Films Using Spectral Reflectance Measurements.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3243, doi. 10.1007/s11664-015-3855-9
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Effect of Electromigration on the Type of Drop Failure of Sn-3.0Ag-0.5Cu Solder Joints in PBGA Packages.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3927, doi. 10.1007/s11664-015-3856-8
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