Works matching IS 03615235 AND DT 2014 AND VI 43 AND IP 8

Results: 43

Mid-Wavelength Infrared nB n for HOT Detectors.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2963, doi. 10.1007/s11664-014-3161-y
By:
- Rogalski, A.;
- Martyniuk, P.
Publication type:
Article
Cadmium Telluride Solar Cells on Ultrathin Glass for Space Applications.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2818, doi. 10.1007/s11664-014-3090-9
By:
- Irvine, S.J.C.;
- Lamb, D.A.;
- Clayton, A.J.;
- Kartopu, G.;
- Barrioz, V.
Publication type:
Article
Modeling Photocurrent Spectra of Single-Color and Dual-Band HgCdTe Photodetectors: Is 3D Simulation Unavoidable?
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3070, doi. 10.1007/s11664-014-3252-9
By:
- Vallone, Marco;
- Goano, Michele;
- Bertazzi, Francesco;
- Ghione, Giovanni;
- Wollrab, Richard;
- Ziegler, Johann
Publication type:
Article
Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2802, doi. 10.1007/s11664-014-3080-y
By:
- Razeghi, M.;
- Haddadi, A.;
- Hoang, A.;
- Chen, G.;
- Bogdanov, S.;
- Darvish, S.;
- Callewaert, F.;
- Bijjam, P.;
- McClintock, R.
Publication type:
Article
Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p-Si Substrates by MOVPE.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2860, doi. 10.1007/s11664-014-3132-3
By:
- Yasuda, K.;
- Niraula, M.;
- Wajima, Y.;
- Yamashita, H.;
- Takai, N.;
- Suzuki, Y.;
- Matsumoto, M.;
- Tsukamoto, Y.;
- Agata, Y.
Publication type:
Article
Theoretical and Experimental Study of Time- and Temperature-Dependent Photoluminescence in ZnO.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3033, doi. 10.1007/s11664-014-3188-0
By:
- Shishehchi, Sara;
- Garrett, Gregory;
- Rudin, Sergey;
- Wraback, Michael;
- Bellotti, Enrico
Publication type:
Article
Processing of LPE-Grown HgCdTe for MWIR Devices Designed for High Operating Temperatures.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2778, doi. 10.1007/s11664-014-3033-5
By:
- Schirmacher, W.;
- Wollrab, R.;
- Lutz, H.;
- Schallenberg, T.;
- Wendler, J.;
- Ziegler, J.
Publication type:
Article
Influence of Hydrogenation on Electrical Conduction in HgCdTe Thin Films on Silicon.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2831, doi. 10.1007/s11664-014-3122-5
By:
- Fahey, S.;
- Boieriu, P.;
- Morath, C.;
- Guidry, D.;
- Treider, L.;
- Bommena, R.;
- Zhao, J.;
- Buurma, C.;
- Grein, C.;
- Sivananthan, S.
Publication type:
Article
Ultrathin CdTe Solar Cells with MoO/Au Back Contacts.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2783, doi. 10.1007/s11664-014-3042-4
By:
- Paudel, Naba;
- Compaan, Alvin;
- Yan, Yanfa
Publication type:
Article
Improvement of RTS Noise in HgCdTe MWIR Detectors.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3060, doi. 10.1007/s11664-014-3217-z
By:
- Brunner, Alexandre;
- Rubaldo, Laurent;
- Destefanis, V.;
- Chabuel, F.;
- Kerlain, A.;
- Bauza, D.;
- Baier, N.
Publication type:
Article
GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2788, doi. 10.1007/s11664-014-3049-x
By:
- Lei, W.;
- Gu, R.;
- Antoszewski, J.;
- Dell, J.;
- Faraone, L.
Publication type:
Article
Incorporation and Activation of Arsenic Dopant in Single-Crystal CdTe Grown on Si by Molecular Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2998, doi. 10.1007/s11664-014-3173-7
By:
- Park, J.H.;
- Farrell, S.;
- Kodama, R.;
- Blissett, C.;
- Wang, X.;
- Colegrove, E.;
- Metzger, W.K.;
- Gessert, T.A.;
- Sivananthan, S.
Publication type:
Article
Numerical Simulation and Analytical Modeling of InAs nB n Infrared Detectors with n-Type Barrier Layers.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2915, doi. 10.1007/s11664-014-3148-8
By:
- Reine, Marion;
- Pinkie, Benjamin;
- Schuster, Jonathan;
- Bellotti, Enrico
Publication type:
Article
Surface Passivation of HgCdTe Using Low-Pressure Chemical Vapor Deposition of CdTe.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3012, doi. 10.1007/s11664-014-3178-2
By:
- Banerjee, Sneha;
- Su, Peng-Yu;
- Dahal, Rajendra;
- Bhat, Ishwara;
- Bergeson, Jeremy;
- Blissett, Caleb;
- Aqariden, Fikri;
- Hanyaloglu, Bengi
Publication type:
Article
Exploring the Optical Properties of HgCdSe Films Using IR-Spectroscopic Ellipsometry.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3056, doi. 10.1007/s11664-014-3208-0
By:
- Peiris, F.C.;
- Brill, G.;
- Doyle, Kevin;
- VanMil, Brenda;
- Myers, Thomas
Publication type:
Article
Study of Morphological Defects on Dual-Band HgCdTe on CdZnTe.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2991, doi. 10.1007/s11664-014-3171-9
By:
- Reddy, M.;
- Radford, W.;
- Lofgreen, D.;
- Olsson, K.;
- Peterson, J.;
- Johnson, S.
Publication type:
Article
Bulk Growth of CdZnTe: Quality Improvement and Size Increase.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2901, doi. 10.1007/s11664-014-3146-x
By:
- Brellier, D.;
- Gout, E.;
- Gaude, G.;
- Pelenc, D.;
- Ballet, P.;
- Miguet, T.;
- Manzato, M.
Publication type:
Article
Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2984, doi. 10.1007/s11664-014-3169-3
By:
- Klipstein, P.;
- Livneh, Y.;
- Glozman, A.;
- Grossman, S.;
- Klin, O.;
- Snapi, N.;
- Weiss, E.
Publication type:
Article
Topographic Evaluation of the Effect of Passivation in Improving the Performance of CdZnTe Detectors.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2941, doi. 10.1007/s11664-014-3153-y
By:
- Hossain, A.;
- Dowdy, A.;
- Bolotnikov, A.;
- Camarda, G.;
- Cui, Y.;
- Roy, U.;
- Tappero, R.;
- Tong, X.;
- Yang, G.;
- James, R.
Publication type:
Article
Numerical Analysis of Radiative Recombination in Narrow-Gap Semiconductors Using the Green's Function Formalism.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2841, doi. 10.1007/s11664-014-3123-4
By:
- Wen, Hanqing;
- Bellotti, Enrico
Publication type:
Article
Structural and Energetic Analysis of Group V Impurities in p-Type HgCdTe: The Case of As and Sb.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2849, doi. 10.1007/s11664-014-3124-3
By:
- Wang, Ziyan;
- Huang, Yan;
- Lei, Wen;
- Chen, Xiaoshuang;
- Zhao, Huxian;
- Zhou, Xiaohao;
- Lu, Wei
Publication type:
Article
Numerical Simulation of the Modulation Transfer Function in HgCdTe Detector Arrays.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2864, doi. 10.1007/s11664-014-3134-1
By:
- Pinkie, Benjamin;
- Bellotti, Enrico
Publication type:
Article
Confocal Micro-PL Mapping of Defects in CdTe Epilayers Grown on Si (211) Substrates with Different Annealing Cycles.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2854, doi. 10.1007/s11664-014-3129-y
By:
- Liu, Henan;
- Zhang, Yong;
- Chen, Yuanping;
- Wijewarnasuriya, Priyalal
Publication type:
Article
Higher Dislocation Density of Arsenic-Doped HgCdTe Material.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3018, doi. 10.1007/s11664-014-3180-8
By:
- Vilela, M.F.;
- Olsson, K.R.;
- Rybnicek, K.;
- Bangs, J.W.;
- Jones, K.A.;
- Harris, S.F.;
- Smith, K.D.;
- Lofgreen, D.D.
Publication type:
Article
Performance Optimization of InSb Infrared Focal-Plane Arrays with Diffractive Microlenses.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2795, doi. 10.1007/s11664-014-3054-0
By:
- Bai, Jie;
- Hu, Weida;
- Guo, Nan;
- Lei, Wen;
- Lv, Yanqiu;
- Zhang, Xiaolei;
- Si, Junjie;
- Chen, Xiaoshuang;
- Lu, Wei
Publication type:
Article
Quantification and Modeling of RMS Noise Distributions in HDVIP Infrared Focal Plane Arrays.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2824, doi. 10.1007/s11664-014-3099-0
By:
- Strong, Roger;
- Kinch, Michael
Publication type:
Article
Tellurium-Rich CdTe, and the Effect of Tellurium Content on the Properties of CdTe.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2888, doi. 10.1007/s11664-014-3141-2
By:
- Ahmad, F.R.;
- Cournoyer, J.R.;
- Raghavan, K.C.;
- Korevaar, B.A.
Publication type:
Article
A Highly Sensitive Multi-element HgCdTe e-APD Detector for IPDA Lidar Applications.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2970, doi. 10.1007/s11664-014-3164-8
By:
- Beck, Jeff;
- Welch, Terry;
- Mitra, Pradip;
- Reiff, Kirk;
- Sun, Xiaoli;
- Abshire, James
Publication type:
Article
Small-Pitch HgCdTe Photodetectors.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3041, doi. 10.1007/s11664-014-3192-4
By:
- Tennant, W.;
- Gulbransen, D.;
- Roll, A.;
- Carmody, M.;
- Edwall, D.;
- Julius, A.;
- Dreiske, P.;
- Chen, A.;
- McLevige, W.;
- Freeman, S.;
- Lee, D.;
- Cooper, D.;
- Piquette, E.
Publication type:
Article
Characterization of the Microstructure of HgCdTe with p-Type Doping.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2908, doi. 10.1007/s11664-014-3147-9
By:
- Lobre, C.;
- Jouneau, P.-H.;
- Mollard, L.;
- Ballet, P.
Publication type:
Article
Improvements of MCT MBE Growth on GaAs.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2935, doi. 10.1007/s11664-014-3149-7
By:
- Ziegler, J.;
- Wenisch, J.;
- Breiter, R.;
- Eich, D.;
- Figgemeier, H.;
- Fries, P.;
- Lutz, H.;
- Wollrab, R.
Publication type:
Article
MBE Growth of Strained HgTe/CdTe Topological Insulator Structures.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2955, doi. 10.1007/s11664-014-3160-z
By:
- Ballet, P.;
- Thomas, C.;
- Baudry, X.;
- Bouvier, C.;
- Crauste, O.;
- Meunier, T.;
- Badano, G.;
- Veillerot, M.;
- Barnes, J.;
- Jouneau, P.;
- Levy, L.
Publication type:
Article
Evaluation of Quantum Efficiency, Crosstalk, and Surface Recombination in HgCdTe Photon-Trapping Structures.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2808, doi. 10.1007/s11664-014-3081-x
By:
- Schuster, Jonathan;
- Bellotti, Enrico
Publication type:
Article
Novel Approach to Surface Processing for Improving the Efficiency of CdZnTe Detectors.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2771, doi. 10.1007/s11664-013-2698-5
By:
- Hossain, A.;
- Bolotnikov, A.;
- Camarda, G.;
- Cui, Y.;
- Jones, D.;
- Hall, J.;
- Kim, K.;
- Mwathi, J.;
- Tong, X.;
- Yang, G.;
- James, R.
Publication type:
Article
Numerical Simulation of Refractive-Microlensed HgCdTe Infrared Focal Plane Arrays Operating in Optical Systems.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2879, doi. 10.1007/s11664-014-3138-x
By:
- Li, Yang;
- Ye, Zhen-Hua;
- Hu, Wei-Da;
- Lei, Wen;
- Gao, Yan-Lin;
- He, Kai;
- Hua, Hua;
- Zhang, Peng;
- Chen, Yi-Yu;
- Lin, Chun;
- Hu, Xiao-Ning;
- Ding, Rui-Jun;
- He, Li
Publication type:
Article
Response Time Measurements in Short-Wave Infrared HgCdTe e-APDs.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2947, doi. 10.1007/s11664-014-3155-9
By:
- Rothman, Johan;
- Foubert, Kevin;
- Lasfargues, Gilles;
- Largeron, Christophe
Publication type:
Article
Growth of AgGaTe and AgAlTe Layers for Novel Photovoltaic Materials.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2874, doi. 10.1007/s11664-014-3135-0
By:
- Uruno, Aya;
- Usui, Ayaka;
- Kobayashi, Masakazu
Publication type:
Article
MTF Issues in Small-Pixel-Pitch Planar Quantum IR Detectors.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3025, doi. 10.1007/s11664-014-3185-3
By:
- Gravrand, O.;
- Baier, N.;
- Ferron, A.;
- Rochette, F.;
- Berthoz, J.;
- Rubaldo, L.;
- Cluzel, R.
Publication type:
Article
CdTe/ZnTe/GaAs Heterostructures for Single-Crystal CdTe Solar Cells.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2895, doi. 10.1007/s11664-014-3142-1
By:
- Su, Peng-Yu;
- Lee, Chungho;
- Wang, Gwo-Ching;
- Lu, Toh-Ming;
- Bhat, Ishwara
Publication type:
Article
Structural and Electronic Properties of Gold Contacts on CdZnTe with Different Surface Finishes for Radiation Detector Applications.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2978, doi. 10.1007/s11664-014-3167-5
By:
- Tari, S.;
- Aqariden, F.;
- Chang, Y.;
- Ciani, A.;
- Grein, C.;
- Li, Jin;
- Kioussis, N.
Publication type:
Article
Defects Study in HgCdTe Infrared Photodetectors by Deep Level Transient Spectroscopy.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3065, doi. 10.1007/s11664-014-3226-y
By:
- Rubaldo, Laurent;
- Brunner, Alexandre;
- Berthoz, Jocelyn;
- Péré-Laperne, N.;
- Kerlain, A.;
- Abraham, P.;
- Bauza, D.;
- Reimbold, G.;
- Gravrand, Olivier
Publication type:
Article
Development of a Method for Chemical-Mechanical Preparation of the Surface of CdZnTe Substrates for HgCdTe-Based Infrared Focal-Plane Arrays.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3004, doi. 10.1007/s11664-014-3175-5
By:
- Pelenc, D.;
- Merlin, J.;
- Etcheberry, A.;
- Ballet, P.;
- Baudry, X.;
- Brellier, D.;
- Destefanis, V.;
- Ferron, A.;
- Fougères, P.;
- Giotta, D.;
- Grangier, C.;
- Mollard, L.;
- Perez, A.;
- Rochette, F.;
- Rubaldo, L.;
- Vaux, C.;
- Vigneron, J.;
- Zanatta, J.-P.
Publication type:
Article
Comparison of Continuously- and Step-Graded ZnSSe/GaAs (001) Metamorphic Buffer Layers.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3047, doi. 10.1007/s11664-014-3205-3
By:
- Kujofsa, T.;
- Ayers, J.E.
Publication type:
Article