Works matching IS 03615235 AND DT 2013 AND VI 42 AND IP 5

Results: 25

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 815, doi. 10.1007/s11664-012-2342-9

By:

Bryan, Zachary;
Hoffmann, Marc;
Tweedie, James;
Kirste, Ronny;
Callsen, Gordon;
Bryan, Isaac;
Rice, Anthony;
Bobea, Milena;
Mita, Seiji;
Xie, Jinqiao;
Sitar, Zlatko;
Collazo, Ramón

Publication type:

Article

A Comparison of ZnO Nanowires and Nanorods Grown Using MOCVD and Hydrothermal Processes.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 894, doi. 10.1007/s11664-012-2444-4

By:

Rivera, Abdiel;
Zeller, John;
Sood, Ashok;
Anwar, Mehdi

Publication type:

Article

Nanoplasmonic Enhanced ZnO/Si Heterojunction Metal-Semiconductor-Metal Photodetectors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 889, doi. 10.1007/s11664-013-2526-y

By:

Tong, Chong;
Yun, Juhyung;
Kozarsky, Eric;
Anderson, Wayne

Publication type:

Article

Conduction- and Valence-Band Energies in Bulk InAsSb and Type II InAsSb/InAs Strained-Layer Superlattices.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 918, doi. 10.1007/s11664-013-2528-9

By:

Lin, Youxi;
Wang, Ding;
Donetsky, Dmitry;
Shterengas, Leon;
Kipshidze, Gela;
Belenky, Gregory;
Svensson, Stefan;
Sarney, Wendy;
Hier, Harry

Publication type:

Article

Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 794, doi. 10.1007/s11664-013-2527-x

By:

Wang, Huanhuan;
Sun, Shun;
Dudley, Michael;
Byrappa, Shayan;
Wu, Fangzhen;
Raghothamachar, Balaji;
Chung, Gil;
Sanchez, Edward;
Mueller, Stephan;
Hansen, Darren;
Loboda, Mark

Publication type:

Article

Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 863, doi. 10.1007/s11664-013-2544-9

By:

Laskar, Masihhur;
Carnevale, Santino;
Sarwar, A.;
Phillips, Patrick;
Mills, Michael;
Myers, Roberto

Publication type:

Article

Synthesis and Characterization of Luminescent Eu(TTA)phen in a Poly(ethylene oxide) Matrix for Detecting Traces of Water.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 927, doi. 10.1007/s11664-013-2559-2

By:

Choi, Pu-Reun;
Park, Hyung-Ho;
Koo, Eunhae

Publication type:

Article

Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 833, doi. 10.1007/s11664-013-2491-5

By:

Leathersich, Jeffrey;
Tungare, Mihir;
Weng, Xiaojun;
Suvarna, Puneet;
Agnihotri, Pratik;
Evans, Morgan;
Redwing, Joan;
Shahedipour-Sandvik, F.

Publication type:

Article

Characterization of Colloidal Quantum Dot Ligand Exchange by X-ray Photoelectron Spectroscopy.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 809, doi. 10.1007/s11664-012-2371-4

By:

Atewologun, Ayomide;
Ge, Wangyao;
Stiff-Roberts, Adrienne

Publication type:

Article

Si Doping of GaN in Hydride Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 820, doi. 10.1007/s11664-012-2373-2

By:

Richter, E.;
Stoica, T.;
Zeimer, U.;
Netzel, C.;
Weyers, M.;
Tränkle, G.

Publication type:

Article

Growth of AgGaTe Layers by a Closed-Space Sublimation Method.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 859, doi. 10.1007/s11664-012-2461-3

By:

Uruno, Aya;
Kobayashi, Masakazu

Publication type:

Article

Formation of Nanodimensional 3C-SiC Structures from Rice Husks.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 799, doi. 10.1007/s11664-012-2421-y

By:

Gorzkowski, E.;
Qadri, S.;
Rath, B.;
Goswami, R.;
Caldwell, J.

Publication type:

Article

Synthesis, Structures, and Multiferroic Properties of Strontium Hexaferrite Ceramics.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 906, doi. 10.1007/s11664-012-2426-6

By:

Tan, Guolong;
Chen, Xiuna

Publication type:

Article

Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 854, doi. 10.1007/s11664-013-2537-8

By:

Suvarna, Puneet;
Tungare, Mihir;
Leathersich, Jeffrey;
Agnihotri, Pratik;
Shahedipour-Sandvik, F.;
Douglas Bell, L.;
Nikzad, Shouleh

Publication type:

Article

Cluster and Thickness Dependence of Ferromagnetism in Nickel In Situ-Doped Amorphous AlN Thin Films.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 844, doi. 10.1007/s11664-013-2493-3

By:

Tanaka, H.;
Jadwisienczak, W.;
Kaya, S.;
Chen, G.;
Wan, C.;
Kordesch, M.

Publication type:

Article

Toward Discrete Axial p- n Junction Nanowire Light-Emitting Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 868, doi. 10.1007/s11664-013-2498-y

By:

Brubaker, Matt;
Blanchard, Paul;
Schlager, John;
Sanders, Aric;
Herrero, Andrew;
Roshko, Alexana;
Duff, Shannon;
Harvey, Todd;
Bright, Victor;
Sanford, Norman;
Bertness, Kris

Publication type:

Article

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 826, doi. 10.1007/s11664-013-2473-7

By:

Reuters, Benjamin;
Wille, A.;
Ketteniss, N.;
Hahn, H.;
Holländer, B.;
Heuken, M.;
Kalisch, H.;
Vescan, A.

Publication type:

Article

Growth and Characterization of InGaN Multiple Quantum Wells Without Phase Separation.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 838, doi. 10.1007/s11664-013-2558-3

By:

Wadekar, P.;
Chen, Q.;
Huang, H.;
Lin, Y.;
Chang, C.;
Seo, H.;
Dung, T.;
Chou, M.;
Feng, S.;
Ho, N.;
Wijesundera, D.;
Chu, W.;
Tu, L.

Publication type:

Article

Growth and Characterization of InGaAs/GaAsP Strained-Layer Superlattices with High Values of y (~80%).

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 912, doi. 10.1007/s11664-012-2375-0

By:

Samberg, J.;
Carlin, C.;
Bradshaw, G.;
Colter, P.;
Bedair, S.

Publication type:

Article

Double-Pulsed Growth of InN by RF-MBE.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 849, doi. 10.1007/s11664-013-2499-x

By:

Kraus, Andreas;
Bremers, Heiko;
Rossow, Uwe;
Hangleiter, Andreas

Publication type:

Article

Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 787, doi. 10.1007/s11664-012-2379-9

By:

Wu, Fangzhen;
Wang, Huanhuan;
Byrappa, Shayan;
Raghothamachar, Balaji;
Dudley, Michael;
Wu, Ping;
Xu, Xueping;
Zwieback, Ilya

Publication type:

Article

Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 901, doi. 10.1007/s11664-012-2326-9

By:

Ozcelik, Adem;
Cabarcos, Orlando;
Allara, David;
Horn, Mark

Publication type:

Article

Room-Temperature Quantum Cascade Laser: ZnO/ZnMgO Versus GaN/AlGaN.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 882, doi. 10.1007/s11664-013-2548-5

By:

Chou, Hung;
Mazady, Anas;
Zeller, John;
Manzur, Tariq;
Anwar, Mehdi

Publication type:

Article

Nonradiative Energy Transfer Between Colloidal Quantum-Dot Phosphors and Silicon Carbide Diodes.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 805, doi. 10.1007/s11664-013-2547-6

By:

Liu, Jie;
Zhang, Fan;
You, Guanjun;
Zhang, Yu;
Wei, Lai;
Zhao, Feng;
Wang, Yongqiang;
Henderson, Ron;
Xu, Jian

Publication type:

Article

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 875, doi. 10.1007/s11664-013-2550-y

By:

Imai, D.;
Ishitani, Y.;
Fujiwara, M.;
Wang, X.;
Kusakabe, K.;
Yoshikawa, A.

Publication type:

Article