Works matching IS 03615235 AND DT 2013 AND VI 42 AND IP 11

Results: 52

Atomic-Scale Characterization of II-VI Compound Semiconductors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3168, doi. 10.1007/s11664-013-2701-1

By:

Smith, David

Publication type:

Article

Interaction Between As and V in Arsenic-Doped HgCdTe.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3054, doi. 10.1007/s11664-013-2574-3

By:

Wang, Ziyan;
Huang, Yan;
Chen, Xiaoshuang;
Zhao, Huxian;
Lei, Wen;
Lu, Wei

Publication type:

Article

Modeling of Dark Current in HgCdTe Infrared Detectors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3303, doi. 10.1007/s11664-013-2733-6

By:

Ferron, A.;
Rothman, J.;
Gravrand, O.

Publication type:

Article

Variable-Field Hall Measurement and Transport in LW Single-Layer n-Type MBE HgCdTe.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3224, doi. 10.1007/s11664-013-2781-y

By:

Brown, A.;
Jaime-Vasquez, M.;
Almeida, L.;
Arias, J.;
Lennon, C.;
Jacobs, R.;
Pellegrino, J.;
Sivananthan, S.

Publication type:

Article

Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem?

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3331, doi. 10.1007/s11664-013-2739-0

By:

Garland, James;
Grein, Christoph;
Sivananthan, Sivalingam

Publication type:

Article

Numerical Simulation of Spatial and Spectral Crosstalk in Two-Color MWIR/LWIR HgCdTe Infrared Detector Arrays.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3080, doi. 10.1007/s11664-013-2647-3

By:

Pinkie, Benjamin;
Bellotti, Enrico

Publication type:

Article

Low-Frequency Noise Characteristics of HgCdTe Infrared Photodiodes Operating at High Temperatures.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3288, doi. 10.1007/s11664-013-2728-3

By:

Hassis, W.;
Gravrand, O.;
Rothman, J.;
Benahmed, S.

Publication type:

Article

Characterization of Plasma Etching Process Damage in HgCdTe.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3006, doi. 10.1007/s11664-013-2654-4

By:

Gaucher, A.;
Baylet, J.;
Rothman, J.;
Martinez, E.;
Cardinaud, C.

Publication type:

Article

Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBE.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3239, doi. 10.1007/s11664-013-2810-x

By:

Kodama, Richard;
Seldrum, Thomas;
Wang, Xiaojin;
Park, J.;
Colegrove, Eric;
Zheng, Xin;
Dhere, Ramesh;
Sivananthan, Siva

Publication type:

Article

Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3217, doi. 10.1007/s11664-013-2780-z

By:

Benson, J.;
Bubulac, L.;
Lennon, C.;
Jacobs, R.;
Smith, P.;
Markunas, J.;
Jaime-Vasquez, M.;
Almeida, L.;
Stoltz, A.;
Arias, J.;
Brill, G.;
Chen, Y.;
Wijewarnasuriya, P.;
Vilela, M.;
Peterson, J.;
Johnson, S.;
Lofgreen, D.;
Rhiger, D.;
Patten, E.;
Bangs, J.

Publication type:

Article

Performance of 12- μm- to 15- μm-Pitch MWIR and LWIR HgCdTe FPAs at Elevated Temperatures.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3103, doi. 10.1007/s11664-013-2658-0

By:

Strong, Roger;
Kinch, Michael;
Armstrong, John

Publication type:

Article

Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3090, doi. 10.1007/s11664-013-2650-8

By:

Chai, J.;
Noriega, O.;
Dedigama, A.;
Kim, J.;
Savage, A.;
Doyle, K.;
Smith, C.;
Chau, N.;
Pena, J.;
Dinan, J.;
Smith, D.;
Myers, T.

Publication type:

Article

Novel Multistate Quantum Dot Gate FETs Using SiO and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3156, doi. 10.1007/s11664-013-2696-7

By:

Lingalugari, M.;
Baskar, K.;
Chan, P.-Y.;
Dufilie, P.;
Suarez, E.;
Chandy, J.;
Heller, E.;
Jain, F.

Publication type:

Article

Impact of Surface Treatment on the Structural and Electronic Properties of Polished CdZnTe Surfaces for Radiation Detectors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3252, doi. 10.1007/s11664-013-2649-1

By:

Tari, Suleyman;
Aqariden, F.;
Chang, Y.;
Grein, C.;
Li, Jin;
Kioussis, N.

Publication type:

Article

Applications of the Infrared Measurement Analyzer: Hydrogenated LWIR HgCdTe Detectors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3283, doi. 10.1007/s11664-013-2726-5

By:

Buurma, Christopher;
Boieriu, Paul;
Bommena, Ramana;
Sivananthan, Sivalingam

Publication type:

Article

Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3138, doi. 10.1007/s11664-013-2683-z

By:

Yang, G.;
Bolotnikov, A.;
Cui, Y.;
Camarda, G.;
Hossain, A.;
Kim, K.;
Franc, J.;
Belas, E.;
James, R.

Publication type:

Article

A Novel Metal-Rich Anneal for In Vacuo Passivation of High-Aspect-Ratio Mercury Cadmium Telluride Surfaces.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3359, doi. 10.1007/s11664-013-2818-2

By:

Wan, Chang-Feng;
Orent, Thomas;
Myers, Thomas;
Bhat, Ishwara;
Stoltz, Andy;
Pellegrino, Joe

Publication type:

Article

Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3125, doi. 10.1007/s11664-013-2680-2

By:

Yasuda, K.;
Niraula, M.;
Namba, S.;
Kondo, T.;
Muramatsu, S.;
Yamashita, H.;
Wajima, Y.;
Agata, Y.

Publication type:

Article

Investigations on a Multiple Mask Technique to Depress Processing-Induced Damage of ICP-Etched HgCdTe Trenches.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3164, doi. 10.1007/s11664-013-2697-6

By:

Ye, Z.;
Hu, W.;
Lei, W.;
Yang, L.;
Zhang, P.;
Huang, Y.;
Lin, C.;
Sun, C.;
Hu, X.;
Ding, R.;
Chen, X.;
Lu, W.;
He, L.

Publication type:

Article

Issues in HgCdTe Research and Expected Progress in Infrared Detector Fabrication.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3349, doi. 10.1007/s11664-013-2803-9

By:

Gravrand, O.;
Destefanis, G.;
Bisotto, S.;
Baier, N.;
Rothman, J.;
Mollard, L.;
Brellier, D.;
Rubaldo, L.;
Kerlain, A.;
Destefanis, V.;
Vuillermet, M.

Publication type:

Article

History of the 'Detector Materials Engineering' Crystal Growth Process for Bulk HgCdTe.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3320, doi. 10.1007/s11664-013-2738-1

By:

Higgins, W.;
Nelson, D.;
Roy, R.;
Murosako, R.;
Lancaster, R.;
Tower, J.;
Norton, P.

Publication type:

Article

Superlattice and Quantum Dot Unipolar Barrier Infrared Detectors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3071, doi. 10.1007/s11664-013-2641-9

By:

Ting, David;
Soibel, Alexander;
Keo, Sam;
Khoshakhlagh, Arezou;
Hill, Cory;
Höglund, Linda;
Mumolo, Jason;
Gunapala, Sarath

Publication type:

Article

Voltage-Dependent Charge Storage in Cladded ZnCdSe Quantum Dot MOS Capacitors for Multibit Memory Applications.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3267, doi. 10.1007/s11664-013-2713-x

By:

Khan, J.;
Lingalugari, M.;
Al-Amoody, F.;
Jain, F.

Publication type:

Article

High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3231, doi. 10.1007/s11664-013-2798-2

By:

Vilela, M.;
Olsson, K.;
Norton, E.;
Peterson, J.;
Rybnicek, K.;
Rhiger, D.;
Fulk, C.;
Bangs, J.;
Lofgreen, D.;
Johnson, S.

Publication type:

Article

Foreword.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 2999, doi. 10.1007/s11664-013-2760-3

By:

Sivananthan, S.;
Dhar, N.;
Anter, Y.

Publication type:

Article

Advancements in THM-Grown CdZnTe for Use as Substrates for HgCdTe.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3129, doi. 10.1007/s11664-013-2681-1

By:

MacKenzie, Jason;
Kumar, Francis;
Chen, Henry

Publication type:

Article

Strain Determination in Quasi-Lattice-Matched LWIR HgCdTe/CdZnTe Layers.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3133, doi. 10.1007/s11664-013-2682-0

By:

Ballet, P.;
Baudry, X.;
Polge, B.;
Brellier, D.;
Merlin, J.;
Gergaud, P.

Publication type:

Article

Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3259, doi. 10.1007/s11664-013-2651-7

By:

Chan, P.-Y.;
Gogna, M.;
Suarez, E.;
Al-Amoody, F.;
Karmakar, S.;
Miller, B.;
Heller, E.;
Ayers, J.;
Jain, F.

Publication type:

Article

Design of Dislocation-Compensated ZnSSe/GaAs (001) Heterostructures.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3034, doi. 10.1007/s11664-013-2773-y

By:

Kujofsa, T.;
Ayers, J.E.

Publication type:

Article

Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3097, doi. 10.1007/s11664-013-2657-1

By:

Farrell, S.;
Rao, Mulpuri;
Brill, G.;
Chen, Y.;
Wijewarnasuriya, P.;
Dhar, N.;
Benson, J.;
Harris, K.

Publication type:

Article

Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3066, doi. 10.1007/s11664-013-2628-6

By:

Rago, P.B.;
Jain, F.C.;
Ayers, J.E.

Publication type:

Article

Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3203, doi. 10.1007/s11664-013-2759-9

By:

Connelly, Blair;
Metcalfe, Grace;
Shen, Hongen;
Wraback, Michael;
Canedy, Chadwick;
Vurgaftman, Igor;
Melinger, Joseph;
Affouda, Chaffra;
Jackson, Eric;
Nolde, Jill;
Meyer, Jerry;
Aifer, Edward

Publication type:

Article

Large-Format and Long-Wavelength Infrared Mercury Cadmium Telluride Detectors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3186, doi. 10.1007/s11664-013-2757-y

By:

Wenisch, J.;
Bitterlich, H.;
Bruder, M.;
Fries, P.;
Wollrab, R.;
Wendler, J.;
Breiter, R.;
Ziegler, J.

Publication type:

Article

Numerical Analysis of Current-Voltage Characteristics of LWIR nBn and p-on- n HgCdTe Photodetectors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3211, doi. 10.1007/s11664-013-2776-8

By:

Kopytko, M.;
Jóźwikowski, K.

Publication type:

Article

Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3275, doi. 10.1007/s11664-013-2724-7

By:

Suarez, Ernesto;
Chan, Pik-Yiu;
Lingalugari, Murali;
Ayers, John;
Heller, Evan;
Jain, Faquir

Publication type:

Article

Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3148, doi. 10.1007/s11664-013-2691-z

By:

Jacobs, R.;
Stoltz, A.;
Benson, J.;
Smith, P.;
Lennon, C.;
Almeida, L.;
Farrell, S.;
Wijewarnasuriya, P.;
Brill, G.;
Chen, Y.;
Salmon, M.;
Zu, J.

Publication type:

Article

Four-State Sub-12-nm FETs Employing Lattice-Matched II-VI Barrier Layers.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3191, doi. 10.1007/s11664-013-2758-x

By:

Jain, F.;
Chan, P.-Y.;
Suarez, E.;
Lingalugari, M.;
Kondo, J.;
Gogna, P.;
Miller, B.;
Chandy, J.;
Heller, E.

Publication type:

Article

Numerical Simulation and Analytical Modeling of InAs nBn Infrared Detectors with p-Type Barriers.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3015, doi. 10.1007/s11664-013-2685-x

By:

Reine, Marion;
Schuster, Jonathan;
Pinkie, Benjamin;
Bellotti, Enrico

Publication type:

Article

Ge-ZnSSe Spatial Wavefunction Switched (SWS) FETs to Implement Multibit SRAMs and Novel Quaternary Logic.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3337, doi. 10.1007/s11664-013-2762-1

By:

Gogna, P.;
Suarez, E.;
Lingalugari, M.;
Chandy, J.;
Heller, E.;
Hasaneen, E.-S.;
Jain, F.-C.

Publication type:

Article

The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic Annealing.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3344, doi. 10.1007/s11664-013-2767-9

By:

Lennon, C.;
Almeida, L.;
Jacobs, R.;
Benson, J.;
Smith, P.;
Markunas, J.;
Arias, J.;
Pellegrino, J.

Publication type:

Article

Depth Profiling of Electronic Transport Parameters in n-on- p Boron-Ion-Implanted Vacancy-Doped HgCdTe.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3108, doi. 10.1007/s11664-013-2659-z

By:

Umana-Membreno, G.;
Kala, H.;
Antoszewski, J.;
Ye, Z.;
Hu, W.;
Ding, R.;
Chen, X.;
Lu, W.;
He, L.;
Dell, J.;
Faraone, L.

Publication type:

Article

Investigation of Radiation Collection by InSb Infrared Focal-Plane Arrays with Micro-optic Structures.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3181, doi. 10.1007/s11664-013-2712-y

By:

Guo, N.;
Hu, W.;
Chen, X.;
Lei, W.;
Lv, Y.;
Zhang, X.;
Si, J.;
Lu, W.

Publication type:

Article

TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3142, doi. 10.1007/s11664-013-2688-7

By:

Kim, Jae;
Jacobs, R.;
Almeida, L.;
Jaime-Vasquez, M.;
Nozaki, C.;
Smith, David

Publication type:

Article

1/ f Noise in HgCdTe Focal-Plane Arrays.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3243, doi. 10.1007/s11664-013-2636-6

By:

Kinch, M.A.;
Strong, R.L.;
Schaake, C.A.

Publication type:

Article

Raymond S. Balcerak, Paul W. Kruse, Thad D. Pickenpaugh, and Jan F. Schetzina: In Memoriam.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3001, doi. 10.1007/s11664-013-2761-2

By:

Reine, Marion

Publication type:

Article

A Slightly Oxidizing Etchant for Polishing of CdTe and CdZnTe Surfaces.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3059, doi. 10.1007/s11664-013-2625-9

By:

Ivanits'ka, V.;
Moravec, P.;
Tomashik, V.;
Mašek, K.;
Tomashik, Z.;
Franc, J.;
Grill, R.;
Höschl, P.

Publication type:

Article

Correlations of Bridgman-Grown CdZnTe Properties with Different Ampoule Rotation Schemes.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3041, doi. 10.1007/s11664-013-2782-x

By:

Datta, Amlan;
Swain, Santosh;
Cui, Yunlong;
Burger, Arnold;
Lynn, Kelvin

Publication type:

Article

Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3309, doi. 10.1007/s11664-013-2737-2

By:

Martyniuk, P.;
Gawron, W.;
Rogalski, A.

Publication type:

Article

Simulation of Current Transport in Polycrystalline CdTe Solar Cells.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3175, doi. 10.1007/s11664-013-2702-0

By:

Troni, F.;
Menozzi, R.;
Colegrove, E.;
Buurma, C.

Publication type:

Article

The Effect of Subbandgap Illumination on the Bulk Resistivity of CdZnTe.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3119, doi. 10.1007/s11664-013-2676-y

By:

Wright, Jonathan;
Washington II, Aaron;
Duff, Martine;
Burger, Arnold;
Groza, Michael;
Matei, Liviu;
Buliga, Vladimir

Publication type:

Article