Works matching IS 03615235 AND DT 2013 AND VI 42 AND IP 11

Results: 52

Atomic-Scale Characterization of II-VI Compound Semiconductors.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3168, doi. 10.1007/s11664-013-2701-1
By:
- Smith, David
Publication type:
Article
Interaction Between As and V in Arsenic-Doped HgCdTe.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3054, doi. 10.1007/s11664-013-2574-3
By:
- Wang, Ziyan;
- Huang, Yan;
- Chen, Xiaoshuang;
- Zhao, Huxian;
- Lei, Wen;
- Lu, Wei
Publication type:
Article
Modeling of Dark Current in HgCdTe Infrared Detectors.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3303, doi. 10.1007/s11664-013-2733-6
By:
- Ferron, A.;
- Rothman, J.;
- Gravrand, O.
Publication type:
Article
Variable-Field Hall Measurement and Transport in LW Single-Layer n-Type MBE HgCdTe.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3224, doi. 10.1007/s11664-013-2781-y
By:
- Brown, A.;
- Jaime-Vasquez, M.;
- Almeida, L.;
- Arias, J.;
- Lennon, C.;
- Jacobs, R.;
- Pellegrino, J.;
- Sivananthan, S.
Publication type:
Article
Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem?
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3331, doi. 10.1007/s11664-013-2739-0
By:
- Garland, James;
- Grein, Christoph;
- Sivananthan, Sivalingam
Publication type:
Article
Numerical Simulation of Spatial and Spectral Crosstalk in Two-Color MWIR/LWIR HgCdTe Infrared Detector Arrays.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3080, doi. 10.1007/s11664-013-2647-3
By:
- Pinkie, Benjamin;
- Bellotti, Enrico
Publication type:
Article
Low-Frequency Noise Characteristics of HgCdTe Infrared Photodiodes Operating at High Temperatures.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3288, doi. 10.1007/s11664-013-2728-3
By:
- Hassis, W.;
- Gravrand, O.;
- Rothman, J.;
- Benahmed, S.
Publication type:
Article
Characterization of Plasma Etching Process Damage in HgCdTe.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3006, doi. 10.1007/s11664-013-2654-4
By:
- Gaucher, A.;
- Baylet, J.;
- Rothman, J.;
- Martinez, E.;
- Cardinaud, C.
Publication type:
Article
Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBE.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3239, doi. 10.1007/s11664-013-2810-x
By:
- Kodama, Richard;
- Seldrum, Thomas;
- Wang, Xiaojin;
- Park, J.;
- Colegrove, Eric;
- Zheng, Xin;
- Dhere, Ramesh;
- Sivananthan, Siva
Publication type:
Article
Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3217, doi. 10.1007/s11664-013-2780-z
By:
- Benson, J.;
- Bubulac, L.;
- Lennon, C.;
- Jacobs, R.;
- Smith, P.;
- Markunas, J.;
- Jaime-Vasquez, M.;
- Almeida, L.;
- Stoltz, A.;
- Arias, J.;
- Brill, G.;
- Chen, Y.;
- Wijewarnasuriya, P.;
- Vilela, M.;
- Peterson, J.;
- Johnson, S.;
- Lofgreen, D.;
- Rhiger, D.;
- Patten, E.;
- Bangs, J.
Publication type:
Article
Performance of 12- μm- to 15- μm-Pitch MWIR and LWIR HgCdTe FPAs at Elevated Temperatures.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3103, doi. 10.1007/s11664-013-2658-0
By:
- Strong, Roger;
- Kinch, Michael;
- Armstrong, John
Publication type:
Article
Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3090, doi. 10.1007/s11664-013-2650-8
By:
- Chai, J.;
- Noriega, O.;
- Dedigama, A.;
- Kim, J.;
- Savage, A.;
- Doyle, K.;
- Smith, C.;
- Chau, N.;
- Pena, J.;
- Dinan, J.;
- Smith, D.;
- Myers, T.
Publication type:
Article
Novel Multistate Quantum Dot Gate FETs Using SiO and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3156, doi. 10.1007/s11664-013-2696-7
By:
- Lingalugari, M.;
- Baskar, K.;
- Chan, P.-Y.;
- Dufilie, P.;
- Suarez, E.;
- Chandy, J.;
- Heller, E.;
- Jain, F.
Publication type:
Article
Impact of Surface Treatment on the Structural and Electronic Properties of Polished CdZnTe Surfaces for Radiation Detectors.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3252, doi. 10.1007/s11664-013-2649-1
By:
- Tari, Suleyman;
- Aqariden, F.;
- Chang, Y.;
- Grein, C.;
- Li, Jin;
- Kioussis, N.
Publication type:
Article
Applications of the Infrared Measurement Analyzer: Hydrogenated LWIR HgCdTe Detectors.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3283, doi. 10.1007/s11664-013-2726-5
By:
- Buurma, Christopher;
- Boieriu, Paul;
- Bommena, Ramana;
- Sivananthan, Sivalingam
Publication type:
Article
Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3138, doi. 10.1007/s11664-013-2683-z
By:
- Yang, G.;
- Bolotnikov, A.;
- Cui, Y.;
- Camarda, G.;
- Hossain, A.;
- Kim, K.;
- Franc, J.;
- Belas, E.;
- James, R.
Publication type:
Article
A Novel Metal-Rich Anneal for In Vacuo Passivation of High-Aspect-Ratio Mercury Cadmium Telluride Surfaces.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3359, doi. 10.1007/s11664-013-2818-2
By:
- Wan, Chang-Feng;
- Orent, Thomas;
- Myers, Thomas;
- Bhat, Ishwara;
- Stoltz, Andy;
- Pellegrino, Joe
Publication type:
Article
Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3125, doi. 10.1007/s11664-013-2680-2
By:
- Yasuda, K.;
- Niraula, M.;
- Namba, S.;
- Kondo, T.;
- Muramatsu, S.;
- Yamashita, H.;
- Wajima, Y.;
- Agata, Y.
Publication type:
Article
Investigations on a Multiple Mask Technique to Depress Processing-Induced Damage of ICP-Etched HgCdTe Trenches.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3164, doi. 10.1007/s11664-013-2697-6
By:
- Ye, Z.;
- Hu, W.;
- Lei, W.;
- Yang, L.;
- Zhang, P.;
- Huang, Y.;
- Lin, C.;
- Sun, C.;
- Hu, X.;
- Ding, R.;
- Chen, X.;
- Lu, W.;
- He, L.
Publication type:
Article
Issues in HgCdTe Research and Expected Progress in Infrared Detector Fabrication.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3349, doi. 10.1007/s11664-013-2803-9
By:
- Gravrand, O.;
- Destefanis, G.;
- Bisotto, S.;
- Baier, N.;
- Rothman, J.;
- Mollard, L.;
- Brellier, D.;
- Rubaldo, L.;
- Kerlain, A.;
- Destefanis, V.;
- Vuillermet, M.
Publication type:
Article
History of the 'Detector Materials Engineering' Crystal Growth Process for Bulk HgCdTe.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3320, doi. 10.1007/s11664-013-2738-1
By:
- Higgins, W.;
- Nelson, D.;
- Roy, R.;
- Murosako, R.;
- Lancaster, R.;
- Tower, J.;
- Norton, P.
Publication type:
Article
Superlattice and Quantum Dot Unipolar Barrier Infrared Detectors.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3071, doi. 10.1007/s11664-013-2641-9
By:
- Ting, David;
- Soibel, Alexander;
- Keo, Sam;
- Khoshakhlagh, Arezou;
- Hill, Cory;
- Höglund, Linda;
- Mumolo, Jason;
- Gunapala, Sarath
Publication type:
Article
Voltage-Dependent Charge Storage in Cladded ZnCdSe Quantum Dot MOS Capacitors for Multibit Memory Applications.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3267, doi. 10.1007/s11664-013-2713-x
By:
- Khan, J.;
- Lingalugari, M.;
- Al-Amoody, F.;
- Jain, F.
Publication type:
Article
High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3231, doi. 10.1007/s11664-013-2798-2
By:
- Vilela, M.;
- Olsson, K.;
- Norton, E.;
- Peterson, J.;
- Rybnicek, K.;
- Rhiger, D.;
- Fulk, C.;
- Bangs, J.;
- Lofgreen, D.;
- Johnson, S.
Publication type:
Article
Foreword.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 2999, doi. 10.1007/s11664-013-2760-3
By:
- Sivananthan, S.;
- Dhar, N.;
- Anter, Y.
Publication type:
Article
Advancements in THM-Grown CdZnTe for Use as Substrates for HgCdTe.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3129, doi. 10.1007/s11664-013-2681-1
By:
- MacKenzie, Jason;
- Kumar, Francis;
- Chen, Henry
Publication type:
Article
Strain Determination in Quasi-Lattice-Matched LWIR HgCdTe/CdZnTe Layers.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3133, doi. 10.1007/s11664-013-2682-0
By:
- Ballet, P.;
- Baudry, X.;
- Polge, B.;
- Brellier, D.;
- Merlin, J.;
- Gergaud, P.
Publication type:
Article
Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3259, doi. 10.1007/s11664-013-2651-7
By:
- Chan, P.-Y.;
- Gogna, M.;
- Suarez, E.;
- Al-Amoody, F.;
- Karmakar, S.;
- Miller, B.;
- Heller, E.;
- Ayers, J.;
- Jain, F.
Publication type:
Article
Design of Dislocation-Compensated ZnSSe/GaAs (001) Heterostructures.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3034, doi. 10.1007/s11664-013-2773-y
By:
- Kujofsa, T.;
- Ayers, J.E.
Publication type:
Article
Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3097, doi. 10.1007/s11664-013-2657-1
By:
- Farrell, S.;
- Rao, Mulpuri;
- Brill, G.;
- Chen, Y.;
- Wijewarnasuriya, P.;
- Dhar, N.;
- Benson, J.;
- Harris, K.
Publication type:
Article
Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3066, doi. 10.1007/s11664-013-2628-6
By:
- Rago, P.B.;
- Jain, F.C.;
- Ayers, J.E.
Publication type:
Article
Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3203, doi. 10.1007/s11664-013-2759-9
By:
- Connelly, Blair;
- Metcalfe, Grace;
- Shen, Hongen;
- Wraback, Michael;
- Canedy, Chadwick;
- Vurgaftman, Igor;
- Melinger, Joseph;
- Affouda, Chaffra;
- Jackson, Eric;
- Nolde, Jill;
- Meyer, Jerry;
- Aifer, Edward
Publication type:
Article
Large-Format and Long-Wavelength Infrared Mercury Cadmium Telluride Detectors.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3186, doi. 10.1007/s11664-013-2757-y
By:
- Wenisch, J.;
- Bitterlich, H.;
- Bruder, M.;
- Fries, P.;
- Wollrab, R.;
- Wendler, J.;
- Breiter, R.;
- Ziegler, J.
Publication type:
Article
Numerical Analysis of Current-Voltage Characteristics of LWIR nBn and p-on- n HgCdTe Photodetectors.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3211, doi. 10.1007/s11664-013-2776-8
By:
- Kopytko, M.;
- Jóźwikowski, K.
Publication type:
Article
Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3275, doi. 10.1007/s11664-013-2724-7
By:
- Suarez, Ernesto;
- Chan, Pik-Yiu;
- Lingalugari, Murali;
- Ayers, John;
- Heller, Evan;
- Jain, Faquir
Publication type:
Article
Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3148, doi. 10.1007/s11664-013-2691-z
By:
- Jacobs, R.;
- Stoltz, A.;
- Benson, J.;
- Smith, P.;
- Lennon, C.;
- Almeida, L.;
- Farrell, S.;
- Wijewarnasuriya, P.;
- Brill, G.;
- Chen, Y.;
- Salmon, M.;
- Zu, J.
Publication type:
Article
Four-State Sub-12-nm FETs Employing Lattice-Matched II-VI Barrier Layers.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3191, doi. 10.1007/s11664-013-2758-x
By:
- Jain, F.;
- Chan, P.-Y.;
- Suarez, E.;
- Lingalugari, M.;
- Kondo, J.;
- Gogna, P.;
- Miller, B.;
- Chandy, J.;
- Heller, E.
Publication type:
Article
Numerical Simulation and Analytical Modeling of InAs nBn Infrared Detectors with p-Type Barriers.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3015, doi. 10.1007/s11664-013-2685-x
By:
- Reine, Marion;
- Schuster, Jonathan;
- Pinkie, Benjamin;
- Bellotti, Enrico
Publication type:
Article
Ge-ZnSSe Spatial Wavefunction Switched (SWS) FETs to Implement Multibit SRAMs and Novel Quaternary Logic.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3337, doi. 10.1007/s11664-013-2762-1
By:
- Gogna, P.;
- Suarez, E.;
- Lingalugari, M.;
- Chandy, J.;
- Heller, E.;
- Hasaneen, E.-S.;
- Jain, F.-C.
Publication type:
Article
The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic Annealing.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3344, doi. 10.1007/s11664-013-2767-9
By:
- Lennon, C.;
- Almeida, L.;
- Jacobs, R.;
- Benson, J.;
- Smith, P.;
- Markunas, J.;
- Arias, J.;
- Pellegrino, J.
Publication type:
Article
Depth Profiling of Electronic Transport Parameters in n-on- p Boron-Ion-Implanted Vacancy-Doped HgCdTe.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3108, doi. 10.1007/s11664-013-2659-z
By:
- Umana-Membreno, G.;
- Kala, H.;
- Antoszewski, J.;
- Ye, Z.;
- Hu, W.;
- Ding, R.;
- Chen, X.;
- Lu, W.;
- He, L.;
- Dell, J.;
- Faraone, L.
Publication type:
Article
Investigation of Radiation Collection by InSb Infrared Focal-Plane Arrays with Micro-optic Structures.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3181, doi. 10.1007/s11664-013-2712-y
By:
- Guo, N.;
- Hu, W.;
- Chen, X.;
- Lei, W.;
- Lv, Y.;
- Zhang, X.;
- Si, J.;
- Lu, W.
Publication type:
Article
TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3142, doi. 10.1007/s11664-013-2688-7
By:
- Kim, Jae;
- Jacobs, R.;
- Almeida, L.;
- Jaime-Vasquez, M.;
- Nozaki, C.;
- Smith, David
Publication type:
Article
1/ f Noise in HgCdTe Focal-Plane Arrays.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3243, doi. 10.1007/s11664-013-2636-6
By:
- Kinch, M.A.;
- Strong, R.L.;
- Schaake, C.A.
Publication type:
Article
Raymond S. Balcerak, Paul W. Kruse, Thad D. Pickenpaugh, and Jan F. Schetzina: In Memoriam.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3001, doi. 10.1007/s11664-013-2761-2
By:
- Reine, Marion
Publication type:
Article
A Slightly Oxidizing Etchant for Polishing of CdTe and CdZnTe Surfaces.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3059, doi. 10.1007/s11664-013-2625-9
By:
- Ivanits'ka, V.;
- Moravec, P.;
- Tomashik, V.;
- Mašek, K.;
- Tomashik, Z.;
- Franc, J.;
- Grill, R.;
- Höschl, P.
Publication type:
Article
Correlations of Bridgman-Grown CdZnTe Properties with Different Ampoule Rotation Schemes.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3041, doi. 10.1007/s11664-013-2782-x
By:
- Datta, Amlan;
- Swain, Santosh;
- Cui, Yunlong;
- Burger, Arnold;
- Lynn, Kelvin
Publication type:
Article
Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3309, doi. 10.1007/s11664-013-2737-2
By:
- Martyniuk, P.;
- Gawron, W.;
- Rogalski, A.
Publication type:
Article
Simulation of Current Transport in Polycrystalline CdTe Solar Cells.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3175, doi. 10.1007/s11664-013-2702-0
By:
- Troni, F.;
- Menozzi, R.;
- Colegrove, E.;
- Buurma, C.
Publication type:
Article
The Effect of Subbandgap Illumination on the Bulk Resistivity of CdZnTe.
Published in:
Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3119, doi. 10.1007/s11664-013-2676-y
By:
- Wright, Jonathan;
- Washington II, Aaron;
- Duff, Martine;
- Burger, Arnold;
- Groza, Michael;
- Matei, Liviu;
- Buliga, Vladimir
Publication type:
Article