Works matching IS 03615235 AND DT 2013 AND VI 42 AND IP 1
Results: 26
Preparation, Characterization, and Microwave Dielectric Properties of SrLaNbTaTiO (0 ≤ x ≤ 1) Ceramics.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 138, doi. 10.1007/s11664-012-2272-6
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Dielectric Properties of Au/PVA (Cobalt-Doped)/ n-Si Photoconductive Diodes.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 103, doi. 10.1007/s11664-012-2332-y
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Evolution of the Structural and Electrical Properties of GeTe Under Different Annealing Conditions.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 78, doi. 10.1007/s11664-012-2262-8
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Implantation Studies on Silicon-Doped GaN.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 21, doi. 10.1007/s11664-012-2278-0
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High-Temperature Thermoelectric Properties of Compounds in the System ZnInO.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 114, doi. 10.1007/s11664-012-2300-6
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Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 58, doi. 10.1007/s11664-012-2309-x
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Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 47, doi. 10.1007/s11664-012-2315-z
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Transformation-Induced Plasticity in Sn-In Solder Joints.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 168, doi. 10.1007/s11664-012-2335-8
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Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 10, doi. 10.1007/s11664-012-2109-3
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Thermal Parameters, Microstructure, and Mechanical Properties of Directionally Solidified Sn-0.7 wt.%Cu Solder Alloys Containing 0 ppm to 1000 ppm Ni.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 179, doi. 10.1007/s11664-012-2263-7
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Electromagnetic Properties of NiZnCoO.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 151, doi. 10.1007/s11664-012-2271-7
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Properties of the Mo Back Contact for the Formation of a Thin-Film Photovoltaic Absorber.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 71, doi. 10.1007/s11664-012-2311-3
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Microstructure of GaNBi.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 26, doi. 10.1007/s11664-012-2323-z
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Fast Preparation and Low-Temperature Thermoelectric Properties of CoSb.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 109, doi. 10.1007/s11664-012-2259-3
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Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 143, doi. 10.1007/s11664-012-2270-8
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Quantum Transport Properties of Graphene Nanoribbons with Defects and Dephasing Scattering Processes.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 1, doi. 10.1007/s11664-012-2243-y
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New Optically Controlled Frequency-Agile Microstrip Antenna.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 162, doi. 10.1007/s11664-012-2273-5
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Effects of HO Pretreatment on the Capacitance-Voltage Characteristics of Atomic-Layer-Deposited AlO on Ga-Face GaN Metal-Oxide-Semiconductor Capacitors.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 33, doi. 10.1007/s11664-012-2246-8
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Structure and Photoluminescent Properties of B-Doped (YDy)InGeO Phosphor.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 156, doi. 10.1007/s11664-012-2264-6
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Electronic Materials Based on CoZnFeO/Pb(ZrTi)O Nanocomposites.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 121, doi. 10.1007/s11664-012-2319-8
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The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 15, doi. 10.1007/s11664-012-2268-2
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Poisson Ratio of Epitaxial Germanium Films Grown on Silicon.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 40, doi. 10.1007/s11664-012-2337-6
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Low-Cycle Fatigue Behavior of 95.8Sn-3.5Ag-0.7Cu Solder Joints.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 192, doi. 10.1007/s11664-012-2258-4
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Impact of Pad Conditioning on Thickness Profile Control in Chemical Mechanical Planarization.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 83, doi. 10.1007/s11664-012-2250-z
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Synthesis of Nanocrystalline CaWO as Low-Temperature Co-fired Ceramic Material: Processing, Structural and Physical Properties.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 129, doi. 10.1007/s11664-012-2303-3
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Experimental Evaluation of the Effect of Pad Debris Size on Microscratches during CMP Process.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 97, doi. 10.1007/s11664-012-2334-9
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