Works matching IS 03615235 AND DT 2012 AND VI 41 AND IP 5

Results: 28

MOCVD Growth of Erbium Monoantimonide Thin Film and Nanocomposites for Thermoelectrics.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 971, doi. 10.1007/s11664-012-2094-6

By:

Norris, Kate;
Lohn, Andrew;
Onishi, Takehiro;
Coleman, Elane;
Wong, Vernon;
Shakouri, Ali;
Tompa, Gary;
Kobayashi, Nobuhiko

Publication type:

Article

Fabrication of High-Quality CoFeSi/SiON/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiON Barrier for Si-Based Spin Transistors.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 954, doi. 10.1007/s11664-012-2078-6

By:

Takamura, Yota;
Hayashi, Kengo;
Shuto, Yusuke;
Sugahara, Satoshi

Publication type:

Article

Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 944, doi. 10.1007/s11664-012-2082-x

By:

Moug, R.T.;
Sultana, H.;
Yao, Y.;
Alfaro-Martinez, A.;
Peng, L.;
Garcia, T.;
Shen, A.;
Gmachl, C.;
Tamargo, M.C.

Publication type:

Article

Comparison of Photonic-Crystal-Enhanced Thermophotovoltaic Devices With and Without a Resonant Cavity.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 928, doi. 10.1007/s11664-012-2081-y

By:

Shemeya, Corey;
Vandervelde, Thomas

Publication type:

Article

Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 948, doi. 10.1007/s11664-012-2050-5

By:

Burke, Peter;
Buehl, Trevor;
Gilles, Pernot;
Lu, Hong;
Shakouri, Ali;
Palmstrom, Chris;
Bowers, John;
Gossard, Arthur

Publication type:

Article

Performance of MnO Crystallographic Phases in Rechargeable Lithium-Air Oxygen Cathode.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 921, doi. 10.1007/s11664-012-2046-1

By:

Oloniyo, Olubukun;
Kumar, Senthil;
Scott, Keith

Publication type:

Article

Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 959, doi. 10.1007/s11664-012-2071-0

By:

Mueller, David;
Roberts, Denzil;
Triplett, Gregory

Publication type:

Article

Nanomanufacturing Strategy for Aligned Assembly of Nanowire Arrays.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 935, doi. 10.1007/s11664-012-2058-x

By:

Shin, Kyeong-Sik;
Chui, Chi

Publication type:

Article

Surface Functionalization of Hydrogen-Terminated Si for Biosensing Applications.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 830, doi. 10.1007/s11664-012-1996-7

By:

Bertani, Paul;
Wen, Xuejin;
Lu, Wu

Publication type:

Article

Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 845, doi. 10.1007/s11664-012-2020-y

By:

Julian, Nick;
Mages, Phil;
Zhang, Chong;
Zhang, Jack;
Kraemer, Stephan;
Stemmer, Susanne;
Denbaars, Steven;
Coldren, Larry;
Petroff, Pierre;
Bowers, John

Publication type:

Article

Synthesis of GeSn Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM).

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 837, doi. 10.1007/s11664-012-2011-z

By:

Bhatia, A.;
Hlaing Oo, W.M.;
Siegel, G.;
Stone, P.R.;
Yu, K.M.;
Scarpulla, M.A.

Publication type:

Article

Growth Studies on Quaternary AlInGaN Layers for HEMT Application.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 905, doi. 10.1007/s11664-012-1989-6

By:

Reuters, Benjamin;
Wille, A.;
Holländer, B.;
Sakalauskas, E.;
Ketteniss, N.;
Mauder, C.;
Goldhahn, R.;
Heuken, M.;
Kalisch, H.;
Vescan, A.

Publication type:

Article

Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 910, doi. 10.1007/s11664-012-2000-2

By:

Cheng, Lin;
Agarwal, Anant;
Dhar, Sarit;
Ryu, Sei-Hyung;
Palmour, John

Publication type:

Article

Thermoelectric Properties of Mn-Doped CaAlSb.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 813, doi. 10.1007/s11664-012-1951-7

By:

Zevalkink, Alex;
Swallow, Jessica;
Snyder, G.

Publication type:

Article

GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 899, doi. 10.1007/s11664-012-1956-2

By:

Jung, Seungyong;
Kipshidze, Gela;
Liang, Rui;
Suchalkin, Sergey;
Shterengas, Leon;
Belenky, Gregory

Publication type:

Article

InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs).

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 857, doi. 10.1007/s11664-012-1977-x

By:

Lal, Shalini;
Snow, Eric;
Lu, Jing;
Swenson, Brian;
Keller, Stacia;
Denbaars, Steven;
Mishra, Umesh

Publication type:

Article

Effects of Growth Temperature on Indium Incorporation in InAlN Alloys Grown by GSMBE on Si(111).

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 824, doi. 10.1007/s11664-012-1967-z

By:

Uddin, Md;
Pandikunta, Mahesh;
Mansurov, Vladimir;
Sohal, Sandeep;
Myasishchev, Denis;
Guryanov, Georgiy;
Kuryatkov, Vladimir;
Holtz, Mark;
Nikishin, Sergey

Publication type:

Article

LaAlO/SrTiO Epitaxial Heterostructures by Atomic Layer Deposition.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 819, doi. 10.1007/s11664-012-1960-6

By:

Sbrockey, Nick;
Luong, Michael;
Gallo, Eric;
Sloppy, Jennifer;
Chen, Guannan;
Winkler, Christopher;
Johnson, Stephanie;
Taheri, Mitra;
Tompa, Gary;
Spanier, Jonathan

Publication type:

Article

Solution-Processed High- k Dielectric, ZrO, and Integration in Thin-Film Transistors.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 895, doi. 10.1007/s11664-012-1905-0

By:

Lee, Chen-Guan;
Dodabalapur, Ananth

Publication type:

Article

Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 965, doi. 10.1007/s11664-012-1920-1

By:

Warde, Elias;
Sakr, Salam;
Tchernycheva, Maria;
Julien, Francois

Publication type:

Article

Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 887, doi. 10.1007/s11664-012-1904-1

By:

Curtin, Benjamin;
Fang, Eugene;
Bowers, John

Publication type:

Article

Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 853, doi. 10.1007/s11664-012-1919-7

By:

Jha, S.;
Wang, C.D.;
Luan, C.Y.;
Liu, C.P.;
Bin, H.;
Kutsay, O.;
Bello, I.;
Zapien, J.A.;
Zhang, W.J.;
Lee, S.T.

Publication type:

Article

Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 881, doi. 10.1007/s11664-011-1881-9

By:

Edmunds, C.;
Tang, L.;
Li, D.;
Cervantes, M.;
Gardner, G.;
Paskova, T.;
Manfra, M.;
Malis, O.

Publication type:

Article

Impact of Parylene-A Encapsulation on ZnO Nanobridge Sensors and Sensitivity Enhancement via Continuous Ultraviolet Illumination.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 873, doi. 10.1007/s11664-011-1867-7

By:

Huang, C.-C.;
Mason, A.D.;
Conley, J.F.;
Heist, C.;
Koesdjojo, M.T.;
Remcho, V.T.;
Afentakis, T.

Publication type:

Article

In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 865, doi. 10.1007/s11664-011-1852-1

By:

Gagnon, Jarod;
Tungare, Mihir;
Weng, Xiaojun;
Leathersich, Jeffrey;
Shahedipour-Sandvik, Fatemeh;
Redwing, Joan

Publication type:

Article

Scalable Electrical Properties of Axial GaAs Nanowire pn-Diodes.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 809, doi. 10.1007/s11664-011-1824-5

By:

Gutsche, C.;
Lysov, A.;
Regolin, I.;
Münstermann, B.;
Prost, W.;
Tegude, F.

Publication type:

Article

Atom Probe Tomography of Zinc Oxide Nanowires.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 801, doi. 10.1007/s11664-011-1803-x

By:

Dawahre, Nabil;
Shen, Gang;
Balci, Soner;
Baughman, William;
Wilbert, David;
Harris, Nick;
Butler, Lee;
Martens, Rich;
Kim, Seongsin;
Kung, Patrick

Publication type:

Article

A Bondable Metallization Stack That Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating Above 500°C.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 5, p. 915, doi. 10.1007/s11664-011-1792-9

By:

Spry, D.J.;
Lukco, D.

Publication type:

Article