Works matching IS 03615235 AND DT 2012 AND VI 41 AND IP 12
Results: 27
Thermal and Mechanical Stability of Ce-Containing Sn-3.9Ag-0.7Cu Lead-Free Solder on Cu and Electroless Ni-P Metallizations.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3249, doi. 10.1007/s11664-012-2170-y
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Development and Evaluation of Direct Deposition of Au/Pd(P) Bilayers over Cu Pads in Soldering Applications.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3276, doi. 10.1007/s11664-012-2200-9
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Interfacial Reactions Between Sn-Zn Alloys and Au Substrate.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3284, doi. 10.1007/s11664-012-2208-1
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Liquid-State Interfacial Reactions of Sn-Zn/Co Couples at 250°C.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3259, doi. 10.1007/s11664-012-2190-7
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Kinetics of Solid-State Reactive Diffusion in the (Ni-Cr)/Sn System.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3292, doi. 10.1007/s11664-012-2217-0
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Interfacial Reactions and Mechanical Properties of Bi- x wt.%Sn/Cu Joints ( x = 2, 5, 10).
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3303, doi. 10.1007/s11664-012-2230-3
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Electrical and Optical Properties of p-Type Li,Cu-Codoped NiO Thin Films.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3382, doi. 10.1007/s11664-012-2213-4
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Microstructural Investigation of Interfacial Features in Al Wire Bonds.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3436, doi. 10.1007/s11664-012-2215-2
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Effect of Inverse Doped Surface Layer in Schottky Barrier Modification: A Numerical Study.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3387, doi. 10.1007/s11664-012-2234-z
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Gold- and Palladium-Induced Embrittlement Phenomenon in Microbumps with Au/Pd(P)/Ni(P) Metallization Pads.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3266, doi. 10.1007/s11664-012-2196-1
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Electrode Materials for GeSbTe-Based Memristors.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3417, doi. 10.1007/s11664-012-2256-6
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Highly Textured MnSi Film Obtained by High-Temperature Treatment.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3423, doi. 10.1007/s11664-012-2257-5
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Effect of a Nanodimensional Polyethylenimine Layer on Current-Voltage Characteristics of Hybrid Structures Based on Single-Crystal Silicon.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3427, doi. 10.1007/s11664-012-2266-4
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Rediscovery of the Role of the i-Layer in n-ZnO/SiO/ p-GaN Through Observations from Both the ZnO and GaN Sides.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3453, doi. 10.1007/s11664-012-2242-z
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Fabrication of CIGS Films by Electrodeposition Method for Photovoltaic Cells.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3375, doi. 10.1007/s11664-012-2252-x
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Barrierless Cu-Ni-Mo Interconnect Films with High Thermal Stability Against Silicide Formation.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3447, doi. 10.1007/s11664-012-2260-x
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Thermoelectric Properties of Heavy Rare Earth Filled Skutterudites DyFeCoSb.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3402, doi. 10.1007/s11664-012-2251-y
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Effects of BiSe Nanoparticle Inclusions on the Microstructure and Thermoelectric Properties of BiTe-Based Nanocomposites.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3411, doi. 10.1007/s11664-012-2255-7
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Influence of External Strain on the Growth of Interfacial Intermetallic Compounds Between Sn and Cu Substrates.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3309, doi. 10.1007/s11664-012-2244-x
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Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3393, doi. 10.1007/s11664-012-2245-9
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Evaluation of Diffusion Barrier Between Pure Sn and Te.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3320, doi. 10.1007/s11664-012-2269-1
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Interfacial Reactions Between Diffusion Barriers and Thermoelectric Materials Under Current Stressing.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3325, doi. 10.1007/s11664-012-2275-3
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NiSn Formation in As-Soldered Ni-Sn and ENIG-Sn Couples.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3331, doi. 10.1007/s11664-012-2277-1
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Study of Electromigration-Induced Failures on Cu Pillar Bumps Joined to OSP and ENEPIG Substrates.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3368, doi. 10.1007/s11664-012-2293-1
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Electromigration Study on Sn(Cu) Solder/Ni(P) Joint Interfaces.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3342, doi. 10.1007/s11664-012-2301-5
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Atomic Mobilities in the Ag-Cu-Sn Face-Centered Cubic Lattice.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3359, doi. 10.1007/s11664-012-2330-0
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Effects of Pd(P) Thickness on the Microstructural Evolution Between Sn-3Ag-0.5Cu and Ni(P)/Pd(P)/Au Surface Finish During the Reflow Process.
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- Journal of Electronic Materials, 2012, v. 41, n. 12, p. 3348, doi. 10.1007/s11664-012-2320-2
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