Works matching IS 03615235 AND DT 2012 AND VI 41 AND IP 10
Results: 50
Measurement of Minority Carrier Lifetime in n-Type MBE HgCdTe on Variable Substrates.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2785, doi. 10.1007/s11664-012-2062-1
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- Article
Recent Results on Growth of (211)B CdTe on (211)Si with Intermediate Ge and ZnTe Buffer Layers by Metalorganic Vapor-Phase Epitaxy.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2824, doi. 10.1007/s11664-012-1947-3
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A Structural Investigation of CdTe(001) Thin Films on GaAs/Si(001) Substrates by High-Resolution Electron Microscopy.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2795, doi. 10.1007/s11664-012-1991-z
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Ab Initio Studies of the Unreconstructed Polar CdTe (111) Surface.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2745, doi. 10.1007/s11664-012-1924-x
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High-Resolution Mobility Spectrum Analysis of Multicarrier Transport in Advanced Infrared Materials.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2816, doi. 10.1007/s11664-012-1978-9
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Modulation Transfer Function Measurement of Infrared Focal-Plane Arrays with Small Fill Factors.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2730, doi. 10.1007/s11664-012-1990-0
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Modeling and Design of a Thin-Film CdTe/Ge Tandem Solar Cell.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2759, doi. 10.1007/s11664-012-1984-y
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Response of the Internal Electric Field in CdZnTe to Illumination at Multiple Optical Powers.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2874, doi. 10.1007/s11664-012-1922-z
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Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2838, doi. 10.1007/s11664-012-2001-1
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Investigation of Structural Defects in CdZnTe Detector-Grade Crystals.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2908, doi. 10.1007/s11664-012-2007-8
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Dynamical X-ray Diffraction from ZnSSe/GaAs (001) Multilayers and Superlattices with Dislocations.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2846, doi. 10.1007/s11664-012-2012-y
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Short-Wave Infrared HgCdTe Avalanche Photodiodes.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2928, doi. 10.1007/s11664-012-1970-4
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- Article
Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2886, doi. 10.1007/s11664-012-1992-y
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MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2917, doi. 10.1007/s11664-012-2032-7
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Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2912, doi. 10.1007/s11664-012-2013-x
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Colloidal HgTe Material for Low-Cost Detection into the MWIR.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2725, doi. 10.1007/s11664-012-2006-9
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HgCdTe Molecular Beam Epitaxy Growth Temperature Calibration Using Spectroscopic Ellipsometry.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2937, doi. 10.1007/s11664-012-2053-2
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Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2738, doi. 10.1007/s11664-012-2054-1
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Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2714, doi. 10.1007/s11664-012-2035-4
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Determination of the Temperature Dependence of the Band Gap Energy of Semiconductors from Transmission Spectra.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2857, doi. 10.1007/s11664-012-2055-0
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Crosstalk Modeling of Small-Pitch Two-Color HgCdTe Photodetectors.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2925, doi. 10.1007/s11664-012-2057-y
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FeZnO-Based Resistive Switching Devices.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2880, doi. 10.1007/s11664-012-2045-2
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Microstructural Characterization of HgCdSe Grown by Molecular Beam Epitaxy on ZnTe/Si(112) and GaSb(112) Substrates.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2852, doi. 10.1007/s11664-012-2069-7
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X-Ray Photoelectron Spectroscopy Study of Oxide Removal Using Atomic Hydrogen for Large-Area II-VI Material Growth.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2799, doi. 10.1007/s11664-012-2085-7
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Growth and Analysis of HgCdTe on Alternate Substrates.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2971, doi. 10.1007/s11664-012-2089-3
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Numerical Estimations of Carrier Generation-Recombination Processes and the Photon Recycling Effect in HgCdTe Heterostructure Photodiodes.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2766, doi. 10.1007/s11664-012-2093-7
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Selective-Area Epitaxy of CdTe on CdTe/ZnTe/Si(211) Through a Nanopatterned Silicon Nitride Mask.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2899, doi. 10.1007/s11664-012-2056-z
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Real-Time In Situ Monitoring of GaAs (211) Oxide Desorption and CdTe Growth by Spectroscopic Ellipsometry.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2965, doi. 10.1007/s11664-012-2088-4
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Performance of Mid-Wave Infrared HgCdTe e-Avalanche Photodiodes.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2943, doi. 10.1007/s11664-012-2087-5
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High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2833, doi. 10.1007/s11664-012-2100-z
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MBE Growth of MCT on GaAs Substrates at AIM.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2828, doi. 10.1007/s11664-012-2113-7
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Optical and Electrical Studies of the Double Acceptor Levels of the Mercury Vacancies in HgCdTe.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2867, doi. 10.1007/s11664-012-2104-8
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Influence of Surface Polishing on the Structural and Electronic Properties of CdZnTe Surfaces.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2893, doi. 10.1007/s11664-012-2126-2
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Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2754, doi. 10.1007/s11664-012-2121-7
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Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2719, doi. 10.1007/s11664-012-2129-z
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Study of Macrodefects in MBE-Grown HgCdTe Epitaxial Layers Using Focused Ion Beam Milling.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2957, doi. 10.1007/s11664-012-2122-6
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Laser-Assisted Chemical Polishing of Silicon (112) Wafers.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2790, doi. 10.1007/s11664-012-2130-6
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Reduction of Dislocation Density by Producing Novel Structures.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2949, doi. 10.1007/s11664-012-2106-6
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Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II-VI Barrier Layers.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2775, doi. 10.1007/s11664-012-2161-z
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Understanding the Evolution of CdTe Buffer Layer Surfaces on ZnTe/Si(211) and GaAs(211)B During Cyclic Annealing.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2975, doi. 10.1007/s11664-012-2169-4
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Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II-VI Tunnel Insulators Showing Three-State Behavior.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2810, doi. 10.1007/s11664-012-2176-5
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Numerical Simulation of InAs nBn Back-Illuminated Detectors.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2981, doi. 10.1007/s11664-012-2168-5
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Electrooptical Characterization of MWIR InAsSb Detectors.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2671, doi. 10.1007/s11664-012-2182-7
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Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2686, doi. 10.1007/s11664-012-2181-8
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MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2700, doi. 10.1007/s11664-012-2189-0
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I- V and Differential Conduction Characteristics of an AlGaAs/GaAs Lateral Quantum Dot Infrared Photodetector.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2679, doi. 10.1007/s11664-012-2187-2
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Foreword.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2661, doi. 10.1007/s11664-012-2236-x
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Development of MBE II-VI Epilayers on GaAs(211)B.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2707, doi. 10.1007/s11664-012-2218-z
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X-ray Diffraction Investigation of Thermoelastic Properties of HgCdTe/CdZnTe Structures.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2694, doi. 10.1007/s11664-012-2240-1
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ZnS-ZnMgS-ZnS Lattice-Matched Gate Insulator as an Alternative for Silicon Dioxide on Silicon in Quantum Dot Gate FETs (QDGFETs).
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2663, doi. 10.1007/s11664-012-2220-5
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