Works matching IS 03615235 AND DT 2011 AND VI 40 AND IP 8

Results: 41

High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1790, doi. 10.1007/s11664-011-1586-0

By:

Rao, S.;
Shintri, S.;
Markunas, J.;
Jacobs, R.;
Bhat, I.

Publication type:

Article

Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1637, doi. 10.1007/s11664-011-1627-8

By:

Shintri, Shashidhar;
Rao, Sunil;
Sarney, Wendy;
Garg, Saurabh;
Palosz, Witold;
Trivedi, Sudhir;
Wijewarnasuriya, Priyalal;
Bhat, Ishwara

Publication type:

Article

Design and Modeling of HgCdTe nBn Detectors.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1624, doi. 10.1007/s11664-011-1614-0

By:

Itsuno, A.;
Phillips, J.;
Velicu, S.

Publication type:

Article

ZnO/ZnSe/ZnTe Heterojunctions for ZnTe-Based Solar Cells.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1674, doi. 10.1007/s11664-011-1641-x

By:

Wang, W.;
Phillips, J.;
Kim, S.;
Pan, X.

Publication type:

Article

Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1642, doi. 10.1007/s11664-011-1633-x

By:

Ye, Z.;
Hu, W.;
Yin, W.;
Huang, J.;
Lin, C.;
Hu, X.;
Ding, R.;
Chen, X.;
Lu, W.;
He, L.

Publication type:

Article

Study of HgCdSe Material Grown by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1679, doi. 10.1007/s11664-011-1643-8

By:

Brill, G.;
Chen, Y.;
Wijewarnasuriya, P.

Publication type:

Article

Optimization of Microlenses for InSb Infrared Focal-Plane Arrays.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1647, doi. 10.1007/s11664-011-1634-9

By:

Guo, N.;
Hu, W.;
Chen, X.;
Meng, C.;
Lv, Y.;
Lu, W.

Publication type:

Article

Spectral Response Model of Backside-Illuminated HgCdTe Detectors.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1657, doi. 10.1007/s11664-011-1637-6

By:

D'Souza, A.;
Robinson, E.;
Wijewarnasuriya, P.;
Stapelbroek, M.

Publication type:

Article

Low-Pressure Chemical Vapor Deposition of CdS and Atomic Layer Deposition of CdTe Films for HgCdTe Surface Passivation.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1668, doi. 10.1007/s11664-011-1640-y

By:

Licausi, Nicholas;
Rao, Sunil;
Bhat, Ishwara

Publication type:

Article

Calculation of Auger Lifetimes in HgCdTe.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1663, doi. 10.1007/s11664-011-1638-5

By:

Bertazzi, Francesco;
Goano, Michele;
Bellotti, Enrico

Publication type:

Article

Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1630, doi. 10.1007/s11664-011-1626-9

By:

Smith, E.;
Venzor, G.;
Gallagher, A.;
Reddy, M.;
Peterson, J.;
Lofgreen, D.;
Randolph, J.

Publication type:

Article

A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1651, doi. 10.1007/s11664-011-1635-8

By:

Bellotti, Enrico;
Moresco, Michele;
Bertazzi, Francesco

Publication type:

Article

Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1860, doi. 10.1007/s11664-011-1648-3

By:

Wang, X.;
Chang, Y.;
Becker, C.;
Grein, C.;
Sivananthan, S.;
Kodama, R.

Publication type:

Article

Three-Dimensional Electromagnetic and Electrical Simulation of HgCdTe Pixel Arrays.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1795, doi. 10.1007/s11664-011-1644-7

By:

Keasler, Craig;
Bellotti, Enrico

Publication type:

Article

Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1815, doi. 10.1007/s11664-011-1653-6

By:

Rhiger, David

Publication type:

Article

Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal-Oxide-Semiconductor Devices Using II-VI Tunnel Insulators.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1685, doi. 10.1007/s11664-011-1655-4

By:

Chan, P.-Y.;
Gogna, M.;
Suarez, E.;
Karmakar, S.;
Al-Amoody, F.;
Miller, B.;
Jain, F.

Publication type:

Article

Chemical Polishing of CdTe and CdZnTe in Iodine-Methanol Etching Solutions.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1802, doi. 10.1007/s11664-011-1649-2

By:

Ivanits'ka, V.;
Moravec, P.;
Franc, J.;
Tomashik, V.;
Tomashik, Z.;
Mašek, K.;
Chukhnenko, P.;
Höschl, P.;
Ulrych, J.

Publication type:

Article

Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer Layers.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1809, doi. 10.1007/s11664-011-1651-8

By:

Markunas, J.;
Jacobs, R.;
Smith, P.;
Pellegrino, J.

Publication type:

Article

Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1689, doi. 10.1007/s11664-011-1656-3

By:

Yang, G.;
Bolotnikov, A.;
Camarda, G.;
Cui, Y.;
Hossain, A.;
Kim, K.;
Gul, R.;
James, R.

Publication type:

Article

Planar n-on- p HgCdTe FPAs for LWIR and VLWIR Applications.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1618, doi. 10.1007/s11664-011-1659-0

By:

Wollrab, R.;
Bauer, A.;
Bitterlich, H.;
Bruder, M.;
Hanna, S.;
Lutz, H.;
Mahlein, K.-M.;
Schallenberg, T.;
Ziegler, J.

Publication type:

Article

Wet Etching of HgCdTe in Aqueous Bromine Solutions: a Quantitative Chemical Approach.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1823, doi. 10.1007/s11664-011-1660-7

By:

Causier, A.;
Gerard, I.;
Bouttemy, M.;
Etcheberry, A.;
Pautet, C.;
Baylet, J.;
Mollard, L.

Publication type:

Article

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1706, doi. 10.1007/s11664-011-1665-2

By:

Reddy, M.;
Peterson, J.;
Vang, T.;
Franklin, J.;
Vilela, M.;
Olsson, K.;
Patten, E.;
Radford, W.;
Bangs, J.;
Melkonian, L.;
Smith, E.;
Lofgreen, D.;
Johnson, S.

Publication type:

Article

Core-Shell ZnCdSe/ZnCdSe Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1699, doi. 10.1007/s11664-011-1663-4

By:

Al-Amoody, Fuad;
Suarez, Ernesto;
Rodriguez, Angel;
Heller, E.;
Huang, Wenli;
Jain, F.

Publication type:

Article

The Effects of Microvoid Defects on MWIR HgCdTe-Based Diodes.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1693, doi. 10.1007/s11664-011-1658-1

By:

Billman, C.;
Almeida, L.;
Smith, P.;
Arias, J.;
Chen, A.;
Lee, D.;
Piquette, E.

Publication type:

Article

Spatial Wavefunction-Switched (SWS) InGaAs FETs with II-VI Gate Insulators.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1717, doi. 10.1007/s11664-011-1667-0

By:

Jain, F.;
Miller, B.;
Suarez, E.;
Chan, P.-Y.;
Karmakar, S.;
Al-Amoody, F.;
Gogna, M.;
Chandy, J.;
Heller, E.

Publication type:

Article

Dual-Color InAs/GaSb Superlattice Focal-Plane Array Technology.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1738, doi. 10.1007/s11664-011-1674-1

By:

Rehm, Robert;
Walther, Martin;
Rutz, Frank;
Schmitz, Johannes;
Wörl, Andreas;
Masur, Jan-Michael;
Scheibner, Ralf;
Wendler, Joachim;
Ziegler, Johann

Publication type:

Article

Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures Grown by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1733, doi. 10.1007/s11664-011-1673-2

By:

ZHAO, W.;
JACOBS, R.;
JAIME-VASQUEZ, M.;
BUBULAC, L.;
SMITH, DAVID

Publication type:

Article

Dislocation Analysis in (112)B HgCdTe/CdTe/Si.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1847, doi. 10.1007/s11664-011-1670-5

By:

Benson, J.;
Farrell, S.;
Brill, G.;
Chen, Y.;
Wijewarnasuriya, P.;
Bubulac, L.;
Smith, P.;
Jacobs, R.;
Markunas, J.;
Jaime-Vasquez, M.;
Almeida, L.;
Stoltz, A.;
Lee, U.;
Vilela, M.;
Peterson, J.;
Johnson, S.;
Lofgreen, D.;
Rhiger, D.;
Patten, E.;
Goetz, P.

Publication type:

Article

Foreword.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1613, doi. 10.1007/s11664-011-1678-x

By:

Sivananthan, S.;
Dhar, N.;
Anter, Y.

Publication type:

Article

Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1727, doi. 10.1007/s11664-011-1669-y

By:

Farrell, S.;
Rao, Mulpuri;
Brill, G.;
Chen, Y.;
Wijewarnasuriya, P.;
Dhar, N.;
Benson, D.;
Harris, K.

Publication type:

Article

History-Dependent Impact Ionization Theory Applied to HgCdTe e-APDs.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1757, doi. 10.1007/s11664-011-1679-9

By:

Rothman, Johan;
Mollard, Laurent;
Goût, Sylvain;
Bonnefond, Leo;
Wlassow, Jerôme

Publication type:

Article

Nonvolatile Silicon Memory Using GeO-Cladded Ge Quantum Dots Self-Assembled on SiO and Lattice-Matched II-VI Tunnel Insulator.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1769, doi. 10.1007/s11664-011-1685-y

By:

Gogna, M.;
Suarez, E.;
Chan, P.-Y.;
Al-Amoody, F.;
Karmakar, S.;
Jain, F.

Publication type:

Article

Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1749, doi. 10.1007/s11664-011-1676-z

By:

Karmakar, Supriya;
Suarez, Ernesto;
Jain, Faquir

Publication type:

Article

HgCdTe Quantum Detection: from Long-Wave IR down to UV.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1781, doi. 10.1007/s11664-011-1691-0

By:

Gravrand, O.;
Rothman, J.

Publication type:

Article

The William E. Spicer-Thomas N. Casselman Award for Best Student Paper.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1615, doi. 10.1007/s11664-011-1677-y

By:

Reine, Marion

Publication type:

Article

Effects of Varying MBE Growth Conditions on Layered Zn-Se-Te Structures.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1775, doi. 10.1007/s11664-011-1690-1

By:

Roy, Bidisha;
Shen, Aidong;
Tamargo, Maria;
Kuskovsky, Igor

Publication type:

Article

Status of p-on- n Arsenic-Implanted HgCdTe Technologies.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1830, doi. 10.1007/s11664-011-1692-z

By:

Mollard, L.;
Destefanis, G.;
Bourgeois, G.;
Ferron, A.;
Baier, N.;
Gravrand, O.;
Barnes, J.;
Papon, A.;
Milesi, F.;
Kerlain, A.;
Rubaldo, L.

Publication type:

Article

CdZnTe Radiation Detectors with HgTe/HgCdTe Superlattice Contacts for Leakage Current Reduction.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1854, doi. 10.1007/s11664-011-1680-3

By:

Chang, Y.;
Grein, C.;
Becker, C.;
Wang, X.;
Duan, Q.;
Ghosh, S.;
Dreiske, P.;
Bommena, R.;
Zhao, J.;
Carmody, M.;
Aqariden, F.;
Sivananthan, S.

Publication type:

Article

The Effect of Various Detector Geometries on the Performance of CZT Using One Crystal.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1744, doi. 10.1007/s11664-011-1675-0

By:

Washington, Aaron;
Teague, Lucile;
Duff, Martine;
Burger, Arnold;
Groza, Michael;
Buliga, Vladimir

Publication type:

Article

Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1785, doi. 10.1007/s11664-011-1697-7

By:

Stoltz, A.;
Benson, J.;
Carmody, M.;
Farrell, S;
Wijewarnasuriya, P.;
Brill, G.;
Jacobs, R.;
Chen, Y.

Publication type:

Article

HgCdTe Photon Trapping Structure for Broadband Mid-Wavelength Infrared Absorption.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1840, doi. 10.1007/s11664-011-1703-0

By:

Wehner, J.;
Smith, E.;
Venzor, G.;
Smith, K.;
Ramirez, A.;
Kolasa, B.;
Olsson, K.;
Vilela, M.

Publication type:

Article