Works matching IS 03615235 AND DT 2011 AND VI 40 AND IP 8

Results: 41

High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1790, doi. 10.1007/s11664-011-1586-0
By:
- Rao, S.;
- Shintri, S.;
- Markunas, J.;
- Jacobs, R.;
- Bhat, I.
Publication type:
Article
Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1637, doi. 10.1007/s11664-011-1627-8
By:
- Shintri, Shashidhar;
- Rao, Sunil;
- Sarney, Wendy;
- Garg, Saurabh;
- Palosz, Witold;
- Trivedi, Sudhir;
- Wijewarnasuriya, Priyalal;
- Bhat, Ishwara
Publication type:
Article
Design and Modeling of HgCdTe nBn Detectors.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1624, doi. 10.1007/s11664-011-1614-0
By:
- Itsuno, A.;
- Phillips, J.;
- Velicu, S.
Publication type:
Article
ZnO/ZnSe/ZnTe Heterojunctions for ZnTe-Based Solar Cells.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1674, doi. 10.1007/s11664-011-1641-x
By:
- Wang, W.;
- Phillips, J.;
- Kim, S.;
- Pan, X.
Publication type:
Article
Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1642, doi. 10.1007/s11664-011-1633-x
By:
- Ye, Z.;
- Hu, W.;
- Yin, W.;
- Huang, J.;
- Lin, C.;
- Hu, X.;
- Ding, R.;
- Chen, X.;
- Lu, W.;
- He, L.
Publication type:
Article
Study of HgCdSe Material Grown by Molecular Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1679, doi. 10.1007/s11664-011-1643-8
By:
- Brill, G.;
- Chen, Y.;
- Wijewarnasuriya, P.
Publication type:
Article
Optimization of Microlenses for InSb Infrared Focal-Plane Arrays.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1647, doi. 10.1007/s11664-011-1634-9
By:
- Guo, N.;
- Hu, W.;
- Chen, X.;
- Meng, C.;
- Lv, Y.;
- Lu, W.
Publication type:
Article
Spectral Response Model of Backside-Illuminated HgCdTe Detectors.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1657, doi. 10.1007/s11664-011-1637-6
By:
- D'Souza, A.;
- Robinson, E.;
- Wijewarnasuriya, P.;
- Stapelbroek, M.
Publication type:
Article
Low-Pressure Chemical Vapor Deposition of CdS and Atomic Layer Deposition of CdTe Films for HgCdTe Surface Passivation.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1668, doi. 10.1007/s11664-011-1640-y
By:
- Licausi, Nicholas;
- Rao, Sunil;
- Bhat, Ishwara
Publication type:
Article
Calculation of Auger Lifetimes in HgCdTe.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1663, doi. 10.1007/s11664-011-1638-5
By:
- Bertazzi, Francesco;
- Goano, Michele;
- Bellotti, Enrico
Publication type:
Article
Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1630, doi. 10.1007/s11664-011-1626-9
By:
- Smith, E.;
- Venzor, G.;
- Gallagher, A.;
- Reddy, M.;
- Peterson, J.;
- Lofgreen, D.;
- Randolph, J.
Publication type:
Article
A 2D Full-Band Monte Carlo Study of HgCdTe-Based Avalanche Photodiodes.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1651, doi. 10.1007/s11664-011-1635-8
By:
- Bellotti, Enrico;
- Moresco, Michele;
- Bertazzi, Francesco
Publication type:
Article
Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1860, doi. 10.1007/s11664-011-1648-3
By:
- Wang, X.;
- Chang, Y.;
- Becker, C.;
- Grein, C.;
- Sivananthan, S.;
- Kodama, R.
Publication type:
Article
Three-Dimensional Electromagnetic and Electrical Simulation of HgCdTe Pixel Arrays.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1795, doi. 10.1007/s11664-011-1644-7
By:
- Keasler, Craig;
- Bellotti, Enrico
Publication type:
Article
Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1815, doi. 10.1007/s11664-011-1653-6
By:
- Rhiger, David
Publication type:
Article
Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal-Oxide-Semiconductor Devices Using II-VI Tunnel Insulators.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1685, doi. 10.1007/s11664-011-1655-4
By:
- Chan, P.-Y.;
- Gogna, M.;
- Suarez, E.;
- Karmakar, S.;
- Al-Amoody, F.;
- Miller, B.;
- Jain, F.
Publication type:
Article
Chemical Polishing of CdTe and CdZnTe in Iodine-Methanol Etching Solutions.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1802, doi. 10.1007/s11664-011-1649-2
By:
- Ivanits'ka, V.;
- Moravec, P.;
- Franc, J.;
- Tomashik, V.;
- Tomashik, Z.;
- Mašek, K.;
- Chukhnenko, P.;
- Höschl, P.;
- Ulrych, J.
Publication type:
Article
Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer Layers.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1809, doi. 10.1007/s11664-011-1651-8
By:
- Markunas, J.;
- Jacobs, R.;
- Smith, P.;
- Pellegrino, J.
Publication type:
Article
Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1689, doi. 10.1007/s11664-011-1656-3
By:
- Yang, G.;
- Bolotnikov, A.;
- Camarda, G.;
- Cui, Y.;
- Hossain, A.;
- Kim, K.;
- Gul, R.;
- James, R.
Publication type:
Article
Planar n-on- p HgCdTe FPAs for LWIR and VLWIR Applications.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1618, doi. 10.1007/s11664-011-1659-0
By:
- Wollrab, R.;
- Bauer, A.;
- Bitterlich, H.;
- Bruder, M.;
- Hanna, S.;
- Lutz, H.;
- Mahlein, K.-M.;
- Schallenberg, T.;
- Ziegler, J.
Publication type:
Article
Wet Etching of HgCdTe in Aqueous Bromine Solutions: a Quantitative Chemical Approach.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1823, doi. 10.1007/s11664-011-1660-7
By:
- Causier, A.;
- Gerard, I.;
- Bouttemy, M.;
- Etcheberry, A.;
- Pautet, C.;
- Baylet, J.;
- Mollard, L.
Publication type:
Article
Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1706, doi. 10.1007/s11664-011-1665-2
By:
- Reddy, M.;
- Peterson, J.;
- Vang, T.;
- Franklin, J.;
- Vilela, M.;
- Olsson, K.;
- Patten, E.;
- Radford, W.;
- Bangs, J.;
- Melkonian, L.;
- Smith, E.;
- Lofgreen, D.;
- Johnson, S.
Publication type:
Article
Core-Shell ZnCdSe/ZnCdSe Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1699, doi. 10.1007/s11664-011-1663-4
By:
- Al-Amoody, Fuad;
- Suarez, Ernesto;
- Rodriguez, Angel;
- Heller, E.;
- Huang, Wenli;
- Jain, F.
Publication type:
Article
The Effects of Microvoid Defects on MWIR HgCdTe-Based Diodes.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1693, doi. 10.1007/s11664-011-1658-1
By:
- Billman, C.;
- Almeida, L.;
- Smith, P.;
- Arias, J.;
- Chen, A.;
- Lee, D.;
- Piquette, E.
Publication type:
Article
Spatial Wavefunction-Switched (SWS) InGaAs FETs with II-VI Gate Insulators.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1717, doi. 10.1007/s11664-011-1667-0
By:
- Jain, F.;
- Miller, B.;
- Suarez, E.;
- Chan, P.-Y.;
- Karmakar, S.;
- Al-Amoody, F.;
- Gogna, M.;
- Chandy, J.;
- Heller, E.
Publication type:
Article
Dual-Color InAs/GaSb Superlattice Focal-Plane Array Technology.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1738, doi. 10.1007/s11664-011-1674-1
By:
- Rehm, Robert;
- Walther, Martin;
- Rutz, Frank;
- Schmitz, Johannes;
- Wörl, Andreas;
- Masur, Jan-Michael;
- Scheibner, Ralf;
- Wendler, Joachim;
- Ziegler, Johann
Publication type:
Article
Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures Grown by Molecular Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1733, doi. 10.1007/s11664-011-1673-2
By:
- ZHAO, W.;
- JACOBS, R.;
- JAIME-VASQUEZ, M.;
- BUBULAC, L.;
- SMITH, DAVID
Publication type:
Article
Dislocation Analysis in (112)B HgCdTe/CdTe/Si.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1847, doi. 10.1007/s11664-011-1670-5
By:
- Benson, J.;
- Farrell, S.;
- Brill, G.;
- Chen, Y.;
- Wijewarnasuriya, P.;
- Bubulac, L.;
- Smith, P.;
- Jacobs, R.;
- Markunas, J.;
- Jaime-Vasquez, M.;
- Almeida, L.;
- Stoltz, A.;
- Lee, U.;
- Vilela, M.;
- Peterson, J.;
- Johnson, S.;
- Lofgreen, D.;
- Rhiger, D.;
- Patten, E.;
- Goetz, P.
Publication type:
Article
Foreword.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1613, doi. 10.1007/s11664-011-1678-x
By:
- Sivananthan, S.;
- Dhar, N.;
- Anter, Y.
Publication type:
Article
Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1727, doi. 10.1007/s11664-011-1669-y
By:
- Farrell, S.;
- Rao, Mulpuri;
- Brill, G.;
- Chen, Y.;
- Wijewarnasuriya, P.;
- Dhar, N.;
- Benson, D.;
- Harris, K.
Publication type:
Article
History-Dependent Impact Ionization Theory Applied to HgCdTe e-APDs.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1757, doi. 10.1007/s11664-011-1679-9
By:
- Rothman, Johan;
- Mollard, Laurent;
- Goût, Sylvain;
- Bonnefond, Leo;
- Wlassow, Jerôme
Publication type:
Article
Nonvolatile Silicon Memory Using GeO-Cladded Ge Quantum Dots Self-Assembled on SiO and Lattice-Matched II-VI Tunnel Insulator.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1769, doi. 10.1007/s11664-011-1685-y
By:
- Gogna, M.;
- Suarez, E.;
- Chan, P.-Y.;
- Al-Amoody, F.;
- Karmakar, S.;
- Jain, F.
Publication type:
Article
Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1749, doi. 10.1007/s11664-011-1676-z
By:
- Karmakar, Supriya;
- Suarez, Ernesto;
- Jain, Faquir
Publication type:
Article
HgCdTe Quantum Detection: from Long-Wave IR down to UV.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1781, doi. 10.1007/s11664-011-1691-0
By:
- Gravrand, O.;
- Rothman, J.
Publication type:
Article
The William E. Spicer-Thomas N. Casselman Award for Best Student Paper.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1615, doi. 10.1007/s11664-011-1677-y
By:
- Reine, Marion
Publication type:
Article
Effects of Varying MBE Growth Conditions on Layered Zn-Se-Te Structures.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1775, doi. 10.1007/s11664-011-1690-1
By:
- Roy, Bidisha;
- Shen, Aidong;
- Tamargo, Maria;
- Kuskovsky, Igor
Publication type:
Article
Status of p-on- n Arsenic-Implanted HgCdTe Technologies.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1830, doi. 10.1007/s11664-011-1692-z
By:
- Mollard, L.;
- Destefanis, G.;
- Bourgeois, G.;
- Ferron, A.;
- Baier, N.;
- Gravrand, O.;
- Barnes, J.;
- Papon, A.;
- Milesi, F.;
- Kerlain, A.;
- Rubaldo, L.
Publication type:
Article
CdZnTe Radiation Detectors with HgTe/HgCdTe Superlattice Contacts for Leakage Current Reduction.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1854, doi. 10.1007/s11664-011-1680-3
By:
- Chang, Y.;
- Grein, C.;
- Becker, C.;
- Wang, X.;
- Duan, Q.;
- Ghosh, S.;
- Dreiske, P.;
- Bommena, R.;
- Zhao, J.;
- Carmody, M.;
- Aqariden, F.;
- Sivananthan, S.
Publication type:
Article
The Effect of Various Detector Geometries on the Performance of CZT Using One Crystal.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1744, doi. 10.1007/s11664-011-1675-0
By:
- Washington, Aaron;
- Teague, Lucile;
- Duff, Martine;
- Burger, Arnold;
- Groza, Michael;
- Buliga, Vladimir
Publication type:
Article
Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1785, doi. 10.1007/s11664-011-1697-7
By:
- Stoltz, A.;
- Benson, J.;
- Carmody, M.;
- Farrell, S;
- Wijewarnasuriya, P.;
- Brill, G.;
- Jacobs, R.;
- Chen, Y.
Publication type:
Article
HgCdTe Photon Trapping Structure for Broadband Mid-Wavelength Infrared Absorption.
Published in:
Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1840, doi. 10.1007/s11664-011-1703-0
By:
- Wehner, J.;
- Smith, E.;
- Venzor, G.;
- Smith, K.;
- Ramirez, A.;
- Kolasa, B.;
- Olsson, K.;
- Vilela, M.
Publication type:
Article