Works matching IS 03615235 AND DT 2011 AND VI 40 AND IP 7
Results: 16
Effect of Constant and Cyclic Current Stressing on the Evolution of Intermetallic Compound Layers.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1517, doi. 10.1007/s11664-011-1632-y
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Statistical Method to Study Thermopower Anisotropy in Small Crystals.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1485, doi. 10.1007/s11664-011-1609-x
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Antimony Telluride Thin Films Electrodeposited in an Alkaline Electrolyte.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1506, doi. 10.1007/s11664-011-1647-4
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Density-Functional Study of the Electronic Structure and Optical Properties of Transparent Conducting Oxides InSnO and InGeO.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1501, doi. 10.1007/s11664-011-1642-9
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Wetting and Soldering Behavior of Eutectic Au-Ge Alloy on Cu and Ni Substrates.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1533, doi. 10.1007/s11664-011-1639-4
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Numerical Modeling of the Performance of Thermal Interface Materials in the Form of Paste-Coated Sheets.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1490, doi. 10.1007/s11664-011-1630-0
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Interfacial Reactions in Sn-Pb/Ni-8.0 at.%V Couples.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1527, doi. 10.1007/s11664-011-1636-7
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Interfacial Microstructure and Growth Kinetics of Intermetallic Compound Layers in Sn-4 wt.%Ag/Cu-X (X = Zn, Ag, Sn) Couples.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1542, doi. 10.1007/s11664-011-1645-6
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Modeling the Power Output of Piezoelectric Energy Harvesters.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1477, doi. 10.1007/s11664-011-1631-z
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Cu Substrates with Different Grain Sizes.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1549, doi. 10.1007/s11664-011-1646-5
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Preparation and Flux-Pinning Properties of Multilayered Yttrium Barium Copper Oxide Thin Films Containing Alternating Barium Zirconate and Yttria Nanostructures.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1512, doi. 10.1007/s11664-011-1657-2
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Electrochemical Corrosion Behaviors of Sn-9Zn-3Bi- xCr Solder in 3.5% NaCl Solution.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1556, doi. 10.1007/s11664-011-1650-9
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Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar ( $$ 11\bar{2}2 $$) Facet GaN.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1572, doi. 10.1007/s11664-011-1652-7
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Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1584, doi. 10.1007/s11664-011-1623-z
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Synthesis of c-Axis Inclined AlN Films in an Off-Center System for Shear Wave Devices.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1578, doi. 10.1007/s11664-011-1662-5
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Improvement in Joint Reliability of SiC Power Devices by a Diffusion Barrier Between Au-Ge Solder and Cu/Ni(P)-Metalized Ceramic Substrates.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1563, doi. 10.1007/s11664-011-1661-6
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