Works matching IS 03615235 AND DT 2011 AND VI 40 AND IP 4
Results: 20
Structural Characterization of Highly Conducting AlGaN ( x > 50%) for Deep-Ultraviolet Light-Emitting Diode.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 377, doi. 10.1007/s11664-010-1493-9
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- Article
Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 394, doi. 10.1007/s11664-010-1378-y
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- Article
Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 419, doi. 10.1007/s11664-010-1396-9
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- Article
Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 473, doi. 10.1007/s11664-010-1395-x
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- Article
Li and OH-Li Complexes in Hydrothermally Grown Single-Crystalline ZnO.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 429, doi. 10.1007/s11664-010-1404-0
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- Article
Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 433, doi. 10.1007/s11664-010-1411-1
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- Article
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 362, doi. 10.1007/s11664-010-1434-7
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- Article
Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 388, doi. 10.1007/s11664-010-1455-2
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- Article
Improved Stability of Pd/Ti Contacts to p-Type SiC Under Continuous DC and Pulsed DC Current Stress.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 406, doi. 10.1007/s11664-010-1482-z
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- Article
Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 400, doi. 10.1007/s11664-010-1449-0
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- Article
Properties of Nitrogen Molecules in ZnO.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 440, doi. 10.1007/s11664-010-1456-1
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- Publication type:
- Article
Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 369, doi. 10.1007/s11664-010-1453-4
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- Publication type:
- Article
Novel Cs-Free GaN Photocathodes.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 382, doi. 10.1007/s11664-010-1507-7
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- Publication type:
- Article
Investigation into Texture, Preferential Orientation, and Optical Properties of Zinc Oxide Nanopolycrystalline Thin Films Deposited by the Sol-Gel Technique on Different Substrates.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 459, doi. 10.1007/s11664-011-1519-y
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- Article
Steady-State Electron Transport and Low-Field Mobility of Wurtzite Bulk ZnO and ZnMgO.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 466, doi. 10.1007/s11664-011-1516-1
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- Publication type:
- Article
In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 453, doi. 10.1007/s11664-011-1515-2
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- Publication type:
- Article
Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 446, doi. 10.1007/s11664-011-1511-6
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- Article
Foreword.
- Published in:
- 2011
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- Publication type:
- Editorial
Erratum to: Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO.
- Published in:
- 2011
- By:
- Publication type:
- Correction Notice
Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 413, doi. 10.1007/s11664-011-1570-8
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- Publication type:
- Article