Works matching IS 03615235 AND DT 2011 AND VI 40 AND IP 4

Results: 20

Structural Characterization of Highly Conducting AlGaN ( x > 50%) for Deep-Ultraviolet Light-Emitting Diode.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 377, doi. 10.1007/s11664-010-1493-9

By:

Dion, Joseph;
Fareed, Qhalid;
Zhang, Bin;
Khan, Asif

Publication type:

Article

Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 394, doi. 10.1007/s11664-010-1378-y

By:

Ščajev, Patrik;
Hassan, Jawad;
Jarašiūnas, Kęstutis;
Kato, Masashi;
Henry, Anne;
Bergman, J.

Publication type:

Article

Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 419, doi. 10.1007/s11664-010-1396-9

By:

Scott, Robin;
Leedy, Kevin;
Bayraktaroglu, Burhan;
Look, David;
Smith, David;
Ding, Ding;
Lu, Xianfeng;
Zhang, Yong-Hang

Publication type:

Article

Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 473, doi. 10.1007/s11664-010-1395-x

By:

Lajn, A.;
Schmidt, M.;
Wenckstern, H.;
Grundmann, M.

Publication type:

Article

Li and OH-Li Complexes in Hydrothermally Grown Single-Crystalline ZnO.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 429, doi. 10.1007/s11664-010-1404-0

By:

Johansen, K.;
Haug, H.;
Prytz, Ø.;
Neuvonen, P.;
Knutsen, K.;
Vines, L.;
Monakhov, E.;
Kuznetsov, A.;
Svensson, B.

Publication type:

Article

Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 433, doi. 10.1007/s11664-010-1411-1

By:

Catalfamo, Frank;
Yen, Tingfang;
Yun, Juhyung;
Anderson, Wayne

Publication type:

Article

An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 362, doi. 10.1007/s11664-010-1434-7

By:

Di Lecce, Valerio;
Esposto, Michele;
Bonaiuti, Matteo;
Fantini, Fausto;
Meneghesso, Gaudenzio;
Zanoni, Enrico;
Chini, Alessandro

Publication type:

Article

Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 388, doi. 10.1007/s11664-010-1455-2

By:

Rodak, L.;
Korakakis, D.

Publication type:

Article

Improved Stability of Pd/Ti Contacts to p-Type SiC Under Continuous DC and Pulsed DC Current Stress.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 406, doi. 10.1007/s11664-010-1482-z

By:

Downey, B.;
Mohney, S.;
Flemish, J.

Publication type:

Article

Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 400, doi. 10.1007/s11664-010-1449-0

By:

Virshup, Ariel;
Liu, Fang;
Lukco, Dorothy;
Buchholt, Kristina;
Spetz, Anita;
Porter, Lisa

Publication type:

Article

Properties of Nitrogen Molecules in ZnO.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 440, doi. 10.1007/s11664-010-1456-1

By:

Nickel, N.;
Gluba, M.

Publication type:

Article

Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 369, doi. 10.1007/s11664-010-1453-4

By:

Armstrong, A.;
Crawford, M.;
Koleske, D.

Publication type:

Article

Novel Cs-Free GaN Photocathodes.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 382, doi. 10.1007/s11664-010-1507-7

By:

Tripathi, Neeraj;
Bell, L.;
Nikzad, SHOULEH;
Tungare, Mihir;
Suvarna, Puneet;
Sandvik, Fatemeh

Publication type:

Article

Investigation into Texture, Preferential Orientation, and Optical Properties of Zinc Oxide Nanopolycrystalline Thin Films Deposited by the Sol-Gel Technique on Different Substrates.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 459, doi. 10.1007/s11664-011-1519-y

By:

Zhang, Daoli;
Huang, Yiping;
Zhang, Jianbing;
Yuan, Lin;
Miao, Xiangshui

Publication type:

Article

Steady-State Electron Transport and Low-Field Mobility of Wurtzite Bulk ZnO and ZnMgO.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 466, doi. 10.1007/s11664-011-1516-1

By:

Yarar, Z.

Publication type:

Article

In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 453, doi. 10.1007/s11664-011-1515-2

By:

Biethan, J.-P.;
Considine, L.;
Pavlidis, D.

Publication type:

Article

Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 446, doi. 10.1007/s11664-011-1511-6

By:

Dai, J.;
Han, X.;
Wu, Z.;
Fang, Y.;
Xiong, H.;
Tian, Y.;
Yu, C.;
He, Q.;
Chen, C.

Publication type:

Article

Foreword.

Published in:

2011

By:

Caldwell, Joshua;
Phillips, Jamie;
Xing, Grace

Publication type:

Editorial

Erratum to: Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO.

Published in:

2011

By:

Lajn, A.;
Schmidt, M.;
Wenckstern, H.;
Grundmann, M.

Publication type:

Correction Notice

Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 413, doi. 10.1007/s11664-011-1570-8

By:

Mahadik, Nadeemullah;
Stahlbush, Robert;
Qadri, Syed;
Glembocki, Orest;
Alexson, Dimitri;
Hobart, Karl;
Caldwell, Joshua;
Myers-Ward, Rachael;
Tedesco, Joseph;
Eddy, Charles;
Gaskill, D.

Publication type:

Article