Works matching IS 03615235 AND DT 2011 AND VI 40 AND IP 3

Results: 16

Electrical Conductivity of Parylene F at High Temperature.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 295, doi. 10.1007/s11664-010-1414-y

By:

Diaham, S.;
Bechara, M.;
Locatelli, M.-L.;
Tenailleau, C.

Publication type:

Article

Laser Direct Writing of Conductive Silver Film on Polyimide Surface from Decomposition of Organometallic Ink.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 301, doi. 10.1007/s11664-010-1418-7

By:

Cai, Zhixiang;
Zeng, Xiaoyan;
Liu, Jianguo

Publication type:

Article

Local Piezoelectricity and Polarity Distribution of Preferred c-Axis-Oriented ZnO Film Investigated by Piezoresponse Force Microscopy.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 253, doi. 10.1007/s11664-010-1415-x

By:

Li, Cui;
Yang, Bao

Publication type:

Article

Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 289, doi. 10.1007/s11664-010-1410-2

By:

Lin, Y.;
Shie, Sheng-Li;
Shie, Tin-En;
Wong, Yuen-Yee;
Chen, K.;
Chang, E.

Publication type:

Article

Tailoring the Structural and Optoelectronic Properties of Al-Doped Nanocrystalline ZnO Thin Films.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 259, doi. 10.1007/s11664-010-1428-5

By:

Periasamy, C.;
Chakrabarti, P.

Publication type:

Article

Dielectric Properties and Microstructure of MgO-TiO-ZnO-CaO Ceramics.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 355, doi. 10.1007/s11664-010-1478-8

By:

Zhang, Yonggang;
Wu, Shunhua;
Liu, Jinxu;
Gao, Shunqi

Publication type:

Article

Interfacial Reactions of Sn-3.5Ag- xZn Solders and Cu Substrate During Liquid-State Aging.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 306, doi. 10.1007/s11664-010-1445-4

By:

Liu, Lijuan;
Zhou, Wei;
Mu, Wenkai;
Wu, Ping

Publication type:

Article

Mechanical Properties and Electrochemical Corrosion Behavior of Al/Sn-9Zn- xAg/Cu Joints.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 315, doi. 10.1007/s11664-010-1459-y

By:

Huang, M.;
Huang, Y.;
Ma, H.;
Zhao, J.

Publication type:

Article

Effects of Bonding Temperature and Pressure on the Electrical Resistance of Cu/Sn/Cu Joints for 3D Integration Applications.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 324, doi. 10.1007/s11664-010-1460-5

By:

Lee, Byunghoon;
Park, Jongseo;
Song, Junghyun;
Kwon, Kee-won;
Lee, Hoo-jeong

Publication type:

Article

An Investigation of Diffusion Barrier Characteristics of an Electroless Co(W,P) Layer to Lead-Free SnBi Solder.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 330, doi. 10.1007/s11664-010-1488-6

By:

Pan, Hung-Chun;
Hsieh, Tsung-Eong

Publication type:

Article

Preparation of BiNdFeO Nanotube Arrays by a Sol-Gel Template Method.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 340, doi. 10.1007/s11664-010-1495-7

By:

Guo, Dongyun;
Gong, Yiping;
Liu, Changyong;
Wang, Chuanbin;
Shen, Qiang;
Zhang, Lianmeng

Publication type:

Article

The Influence of Film Thickness on the Transparency and Conductivity of Al-Doped ZnO Thin Films Fabricated by Ion-Beam Sputtering.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 267, doi. 10.1007/s11664-010-1503-y

By:

Liang, Guang-Xing;
Fan, Ping;
Cai, Xing-Min;
Zhang, Dong-Ping;
Zheng, Zhuang-Hao

Publication type:

Article

Point Defects in CdZnTe Crystals Grown by Different Techniques.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 274, doi. 10.1007/s11664-010-1504-x

By:

Gul, R.;
Bolotnikov, A.;
Kim, H.;
Rodriguez, R.;
Keeter, K.;
Li, Z.;
Gu, G.;
James, R.

Publication type:

Article

The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 280, doi. 10.1007/s11664-010-1505-9

By:

Bubulac, L.;
Benson, J.D.;
Jacobs, R.N.;
Stoltz, A.J.;
Jaime-Vasquez, M.;
Almeida, L.;
Wang, A.;
Wang, L.;
Hellmer, R.;
Golding, T.;
Dinan, J.H.;
Carmody, M.;
Wijewarnasuriya, P.S.;
Lee, M.F.;
Vilela, M.F.;
Peterson, J.;
Johnson, S.M.;
Lofgreen, D.F.;
Rhiger, D.

Publication type:

Article

Fabrication of Metal-Oxide-Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO and AlO.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 247, doi. 10.1007/s11664-010-1500-1

By:

Saito, Takeyasu;
Park, Kyung-ho;
Hirama, Kazuyuki;
Umezawa, Hitoshi;
Satoh, Mitsuya;
Kawarada, Hiroshi;
Liu, Zhi-Quan;
Mitsuishi, Kazutaka;
Furuya, Kazuo;
Okushi, Hideyo

Publication type:

Article

Creep Properties of Sn-1.0Ag-0.5Cu Lead-Free Solder with Ni Addition.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 3, p. 344, doi. 10.1007/s11664-011-1510-7

By:

Che, F.;
Zhu, W.;
Poh, Edith;
Zhang, X.;
Zhang, Xiaowu;
Chai, T.;
Gao, S.

Publication type:

Article