Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 8
Results: 34
Improved Thermoelectric Performance and Mechanical Properties of Nanostructured Melt-Spun β-Zn<sub>4</sub>Sb<sub>3</sub>.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1159, doi. 10.1007/s11664-010-1288-z
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- Article
Electron–Electron Interactions in Sb-Doped SnO<sub>2</sub> Thin Films.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1152, doi. 10.1007/s11664-010-1252-y
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Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on α-Al<sub>2</sub>O<sub>3</sub>.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1209, doi. 10.1007/s11664-010-1251-z
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Thermodynamic Description of the Te-Tl Binary System Using the Associate Solution Model.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1319, doi. 10.1007/s11664-010-1248-7
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Electrical Conductivity of Graphene Composites with In and In-Ga Alloy.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1268, doi. 10.1007/s11664-010-1208-2
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Comparative Study on the Properties of Galvanically Deposited Nano- and Microcrystalline Thin Films of PbSe.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1177, doi. 10.1007/s11664-010-1194-4
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- Article
Influence of Cadmium Composition on CH<sub>4</sub>–H<sub>2</sub>-Based Inductively Coupled Plasma Etching of Hg<sub>1− x</sub>Cd<sub> x</sub>Te.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1256, doi. 10.1007/s11664-010-1221-5
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- Article
Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1262, doi. 10.1007/s11664-010-1224-2
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Effective Permittivity Calculation of Composites with Interpenetrating Phases.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1351, doi. 10.1007/s11664-010-1229-x
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Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1248, doi. 10.1007/s11664-010-1228-y
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- Article
Improvement of High-Temperature Performance of Zn-Sn Solder Joint.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1241, doi. 10.1007/s11664-010-1233-1
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Carboxylate-Passivated Silver Nanoparticles and Their Application to Sintered Interconnection: A Replacement for High Temperature Lead-Rich Solders.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1233, doi. 10.1007/s11664-010-1236-y
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- Article
Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1303, doi. 10.1007/s11664-010-1180-x
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- Article
Effect of Ag Content on Solidification Cracking Susceptibility of Sn-Ag-Cu Solder Joints.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1298, doi. 10.1007/s11664-010-1175-7
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- Article
Crystallographically Faceted Void Formation in the Matrix of Lead-Free Solder Joints.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1295, doi. 10.1007/s11664-010-1184-6
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- Article
Thermoelectric Properties of Layer-Antiferromagnet CuCrS<sub>2</sub>.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1133, doi. 10.1007/s11664-010-1185-5
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- Article
Interfacial Reaction Between 95Pb-5Sn Solder Bump and 37Pb-63Sn Presolder in Flip-Chip Solder Joints.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1289, doi. 10.1007/s11664-010-1186-4
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- Article
Nonvolatile Metal–Oxide–Semiconductor Capacitors with Ru-RuO<sub> x</sub> Composite Nanodots Embedded in Atomic-Layer-Deposited Al<sub>2</sub>O<sub>3</sub> Films.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1343, doi. 10.1007/s11664-010-1245-x
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- Article
A Low-Temperature Bonding Process Using Mixed Cu–Ag Nanoparticles.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1283, doi. 10.1007/s11664-010-1195-3
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- Article
Weakening of the Cu/Cu<sub>3</sub>Sn(100) Interface by Bi Impurities.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1277, doi. 10.1007/s11664-010-1196-2
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Effects of Current Stressing on Formation and Evolution of Kirkendall Voids at Sn–3.5Ag/Cu Interface.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1309, doi. 10.1007/s11664-010-1201-9
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- Article
Ti-Rich Barrier Layers Self-Formed on Porous Low- k Layers Using Cu(1 at.% Ti) Alloy Films.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1326, doi. 10.1007/s11664-010-1182-8
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- Article
Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1166, doi. 10.1007/s11664-010-1192-6
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- Article
Interface Formation and Electrical Transport in SnO<sub>2</sub>:Eu<sup>3+</sup>/GaAs Heterojunction Deposited by Sol–Gel Dip-Coating and Resistive Evaporation.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1170, doi. 10.1007/s11664-010-1161-0
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- Article
Reduced Temperature Coefficient of Capacitance (TCC) of Embedded Capacitor Films (ECFs) for Organic Substrates using SrTiO<sub>3</sub> and Multifunctional Epoxy.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1358, doi. 10.1007/s11664-010-1216-2
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Dielectric and Electrical Conductivity Relaxation in 0.5Li<sub>2</sub>O-0.5Na<sub>2</sub>O-2B<sub>2</sub>O<sub>3</sub> Glasses.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1334, doi. 10.1007/s11664-010-1169-5
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Ti-O Direct-Current-Sintered Bodies and Their Use for Sputter Deposition of TiO Thin Films: Fabrication and Characterization.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1364, doi. 10.1007/s11664-010-1166-8
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Critical Layer Thickness in Exponentially Graded Heteroepitaxial Layers.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1140, doi. 10.1007/s11664-010-1165-9
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- Article
Microstructural Analysis of Reballed Tin-Lead, Lead-Free, and Mixed Ball Grid Array Assemblies Under Temperature Cycling Test.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1218, doi. 10.1007/s11664-010-1209-1
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Characterization by Internal Photoemission Spectroscopy of Single-Crystal CVD Diamond Schottky Barrier Diodes.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1203, doi. 10.1007/s11664-010-1255-8
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Crystallization of Amorphous Si<sub>0.6</sub>Ge<sub>0.4</sub> Nanoparticles Embedded in SiO<sub>2</sub>: Crystallinity Versus Compositional Stability.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1194, doi. 10.1007/s11664-010-1254-9
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- Article
Optical Study of Filled Tetrahedral Compounds Li<sub>3</sub>AlN<sub>2</sub> and Li<sub>3</sub>GaN<sub>2</sub>.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1186, doi. 10.1007/s11664-010-1268-3
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- Article
High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1125, doi. 10.1007/s11664-010-1258-5
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- Article
Structural Properties of AlN Grown on Sapphire at Plasma Self-Heating Conditions Using Reactive Magnetron Sputter Deposition.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1146, doi. 10.1007/s11664-010-1275-4
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- Article