Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 7
Results: 44
Effect of Hydrogen Free Radicals on Hg<sub>1− x</sub>Cd<sub> x</sub>Te.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 857, doi. 10.1007/s11664-010-1222-4
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- Publication type:
- Article
Numerical Simulation of ZnO-Based Terahertz Quantum Cascade Lasers.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1097, doi. 10.1007/s11664-010-1206-4
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- Publication type:
- Article
MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1058, doi. 10.1007/s11664-009-1041-7
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- Article
Simulations of Dislocations in CdZnTe/SL/Si Substrates.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1063, doi. 10.1007/s11664-009-1039-1
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- Publication type:
- Article
Investigation of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1053, doi. 10.1007/s11664-009-1050-6
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- Publication type:
- Article
Shallow-Etch Mesa Isolation of Graded-Bandgap “W”-Structured Type II Superlattice Photodiodes.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1070, doi. 10.1007/s11664-009-1056-0
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- Publication type:
- Article
“Rule 07” Revisited: Still a Good Heuristic Predictor of p/ n HgCdTe Photodiode Performance?
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1030, doi. 10.1007/s11664-010-1084-9
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- Publication type:
- Article
HgCdTe: Recent Trends in the Ultimate IR Semiconductor.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1043, doi. 10.1007/s11664-010-1087-6
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- Publication type:
- Article
A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1019, doi. 10.1007/s11664-010-1083-x
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- Publication type:
- Article
Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 951, doi. 10.1007/s11664-010-1152-1
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- Publication type:
- Article
Electronic and Optical Properties of Mg<sub> x</sub>Zn<sub>1− x</sub>O and Be<sub> x</sub>Zn<sub>1− x</sub>O Quantum Wells.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 936, doi. 10.1007/s11664-010-1163-y
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- Publication type:
- Article
Microstructural Characterization of CdTe Surface Passivation Layers.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 924, doi. 10.1007/s11664-010-1176-6
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- Publication type:
- Article
LWIR Strained-Layer Superlattice Materials and Devices at Teledyne Imaging Sensors.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1001, doi. 10.1007/s11664-010-1091-x
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- Publication type:
- Article
Investigation of Multicarrier Transport in LPE-Grown Hg<sub>1− x</sub>Cd<sub> x</sub>Te Layers.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1023, doi. 10.1007/s11664-010-1086-7
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- Publication type:
- Article
Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Substrates.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 996, doi. 10.1007/s11664-010-1095-6
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- Publication type:
- Article
Effective Surface Passivation of CdMnTe Materials.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1015, doi. 10.1007/s11664-010-1090-y
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- Publication type:
- Article
Achieving Manufacturing Readiness for 6-Inch HgCdTe on Silicon.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1007, doi. 10.1007/s11664-010-1089-4
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- Publication type:
- Article
Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 992, doi. 10.1007/s11664-010-1107-6
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- Publication type:
- Article
Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 981, doi. 10.1007/s11664-010-1121-8
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- Publication type:
- Article
HgCdTe Growth on 6 cm × 6 cm CdZnTe Substrates for Large-Format Dual-Band Infrared Focal-Plane Arrays.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 974, doi. 10.1007/s11664-010-1141-4
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- Publication type:
- Article
Monte Carlo Modeling of VLWIR HgCdTe Interdigitated Pixel Response.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 986, doi. 10.1007/s11664-010-1122-7
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- Publication type:
- Article
Feasibility of Localized Substrate Thinning for Reduced Dislocation Density in CdTe/Si Heterostructures.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1036, doi. 10.1007/s11664-010-1085-8
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- Publication type:
- Article
Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 967, doi. 10.1007/s11664-010-1142-3
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- Publication type:
- Article
Wafer Mapping Using Deuterium Enhanced Defect Characterization.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 930, doi. 10.1007/s11664-010-1162-z
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- Publication type:
- Article
Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 945, doi. 10.1007/s11664-010-1157-9
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- Publication type:
- Article
MBE-Grown II–VI and Related Nanostructures.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 882, doi. 10.1007/s11664-010-1215-3
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- Publication type:
- Article
Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211).
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 908, doi. 10.1007/s11664-010-1200-x
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- Publication type:
- Article
Growth of HgTe Quantum Wells for IR to THz Detectors.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 918, doi. 10.1007/s11664-010-1191-7
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- Publication type:
- Article
Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 903, doi. 10.1007/s11664-010-1207-3
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- Publication type:
- Article
HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 893, doi. 10.1007/s11664-010-1211-7
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- Publication type:
- Article
Metalorganic Chemical Vapor Deposition of CdTe(133) Epilayers on Si(211) Substrates.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 863, doi. 10.1007/s11664-010-1220-6
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- Publication type:
- Article
MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 873, doi. 10.1007/s11664-010-1218-0
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- Publication type:
- Article
Photoluminescence Studies of HgCdTe Epilayers.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 868, doi. 10.1007/s11664-010-1219-z
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- Publication type:
- Article
Two-Dimensional Long-Wavelength and Very Long-Wavelength Focal-Plane Arrays at AIM.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 846, doi. 10.1007/s11664-010-1235-z
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- Publication type:
- Article
Effects of HgCdTe on the Optical Emission of Inductively Coupled Plasmas.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 958, doi. 10.1007/s11664-010-1147-y
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- Publication type:
- Article
Shockley–Haynes Characterization of Minority-Carrier Drift Velocity, Diffusion Coefficient, and Lifetime in HgCdTe Avalanche Photodiodes.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 837, doi. 10.1007/s11664-010-1247-8
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- Publication type:
- Article
Full-Band Monte Carlo Simulation of HgCdTe APDs.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 912, doi. 10.1007/s11664-010-1198-0
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- Publication type:
- Article
Radiation Damage in Type II Superlattice Infrared Detectors.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 852, doi. 10.1007/s11664-010-1227-z
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- Publication type:
- Article
Atmospheric Effects on the Performance of CdZnTe Single-Crystal Detectors.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1104, doi. 10.1007/s11664-010-1193-5
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- Publication type:
- Article
Foreword.
- Published in:
- 2010
- By:
- Publication type:
- Editorial
Characterization of Dislocations in (112)B HgCdTe/CdTe/Si.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1080, doi. 10.1007/s11664-010-1262-9
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- Publication type:
- Article
Analysis of Current–Voltage Measurements on Long-Wavelength HgCdTe Photodiodes Fabricated on Si Composite Substrates.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1110, doi. 10.1007/s11664-010-1257-6
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- Publication type:
- Article
Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1118, doi. 10.1007/s11664-010-1241-1
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- Publication type:
- Article
Molecular Beam Epitaxially Grown HgTe and HgCdTe-on-Silicon for Space-Based X-Ray Calorimetry Applications.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1087, doi. 10.1007/s11664-010-1249-6
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- Publication type:
- Article