Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 6

Results: 41

Determination of Piezoelectric Fields Across InGaN/GaN Quantum Wells by Means of Electron Holography.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 815, doi. 10.1007/s11664-010-1092-9

By:

Deguchi, Masashi;
Tanaka, Shigeyasu;
Tanji, Takayoshi

Publication type:

Article

Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 620, doi. 10.1007/s11664-010-1217-1

By:

Zamoryanskaya, M. V.;
Kuznetsova, Ya. V.;
Popova, T. B.;
Shakhmin, A. A.;
Vinokurov, D. A.;
Trofimov, A. N.

Publication type:

Article

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 684, doi. 10.1007/s11664-010-1168-6

By:

Bin Chen;
Jun Chen;
Sekiguchi, Takashi;
Ohyanagi, Takasumi;
Matsuhata, Hirofumi;
Kinoshita, Akimasa;
Okumura, Hajime

Publication type:

Article

Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 677, doi. 10.1007/s11664-010-1159-7

By:

Zeimer, U.;
Jahn, U.;
Hoffmann, V.;
Weyers, M.;
Kneissl, M.

Publication type:

Article

Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 694, doi. 10.1007/s11664-010-1148-x

By:

Kosemura, Daisuke;
Hattori, Maki;
Yoshida, Tetsuya;
Mizukoshi, Toshikazu;
Ogura, Atsushi

Publication type:

Article

LBIC and Reflectance Mapping of Multicrystalline Si Solar Cells.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 663, doi. 10.1007/s11664-010-1174-8

By:

Moralejo, B.;
González, M.;
Jiménez, J.;
Parra, V.;
Martínez, O.;
Gutiérrez, J.;
Charro, O.

Publication type:

Article

The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 656, doi. 10.1007/s11664-010-1177-5

By:

Moram, M. A.;
Gabbai, U. E.;
Sadler, T. C.;
Kappers, M. J.;
Oliver, R. A.

Publication type:

Article

Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 671, doi. 10.1007/s11664-010-1178-4

By:

Martínez, O.;
Hortelano, V.;
Jiménez, J.;
Parra, V.;
Pelosi, C.;
Attolini, G.;
Prutskij, T.

Publication type:

Article

Defect-Related White-Light Emission from ZnO in an n-Mg0.2Zn0.8O/ n-ZnO/SiO x Heterostructure on n-Si.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 652, doi. 10.1007/s11664-010-1173-9

By:

Peiliang Chen;
Xiangyang Ma;
Yuanyuan Zhang;
Dongsheng Li;
Deren Yang

Publication type:

Article

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 648, doi. 10.1007/s11664-010-1197-1

By:

Yuheng Zeng;
Xiangyang Ma;
Jiahe Chen;
Deren Yang

Publication type:

Article

Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 715, doi. 10.1007/s11664-010-1158-8

By:

Yamaguchi, Hirotaka;
Matsuhata, Hirofumi

Publication type:

Article

Evolution of Optical and Mechanical Properties of Semiconductors over 40 Years.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 635, doi. 10.1007/s11664-010-1170-z

By:

Pyshkin, Sergei;
Ballato, John

Publication type:

Article

Accelerated Light-Induced Degradation (ALID) for Monitoring of Defects in PV Silicon Wafers and Solar Cells.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 642, doi. 10.1007/s11664-010-1183-7

By:

Wilson, Marshall;
Edelman, Piotr;
Savtchouk, Alexandre;
D'Amico, John;
Findlay, Andrew;
Lagowski, Jacek

Publication type:

Article

Influence of Operating Conditions on Quantum Cascade Laser Temperature.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 630, doi. 10.1007/s11664-010-1213-5

By:

Pierściński, Kamil;
Pierścińska, Dorota;
Kosiel, Kamil;
Szerling, Anna;
Bugajski, Maciej

Publication type:

Article

Foreword.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 619, doi. 10.1007/s11664-010-1223-3

By:

Edelman, Piotr;
Skowronski, Marek

Publication type:

Article

Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 625, doi. 10.1007/s11664-010-1212-6

By:

Domengie, F.;
Regolini, J. L.;
Bauza, D.

Publication type:

Article

Synchrotron X-Ray Topography Study of Structural Defects and Strain in Epitaxial Structures of Yb- and Tm-Doped Potassium Rare-Earth Double Tungstates and Their Influence on Laser Performance.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 823, doi. 10.1007/s11664-010-1226-0

By:

Raghothamachar, B.;
Carvajal, J. J.;
Pujol, M. C.;
Mateos, X.;
Solé, R.;
Aguiló, M.;
Díaz, F.;
Dudley, M.

Publication type:

Article

Electron Scattering Mechanism of FTO Films Grown by Spray Pyrolysis Method.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 819, doi. 10.1007/s11664-010-1225-1

By:

Oshima, Minoru;
Yoshino, Kenji

Publication type:

Article

Effects of Crystal-Induced Optical Incoherence in Electro-Optic Field Sensors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 811, doi. 10.1007/s11664-010-1103-x

By:

Garzarella, A.;
Qadri, S. B.;
Dong Ho Wu

Publication type:

Article

Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 799, doi. 10.1007/s11664-010-1105-8

By:

Yu Zhang;
Hui Chen;
Choi, Gloria;
Raghothamachar, Balaji;
Dudley, Michael;
Edgar, James;
Grasza, Krzysztof;
Tymicki, Emil;
Lihua Zhang;
Dong Su;
Yimei Zhu

Publication type:

Article

Cathodoluminescence Study of Orientation-Patterned GaAs Crystals for Nonlinear Optics.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 805, doi. 10.1007/s11664-010-1106-7

By:

Martínez, O.;
Avella, M.;
Hortelano, V.;
Jiménez, J.;
Lynch, C.;
Bliss, D.

Publication type:

Article

Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 794, doi. 10.1007/s11664-010-1123-6

By:

Yastrubchak, O.;
Domagala, J. Z.;
Sadowski, J.;
Kulik, M.;
Zuk, J.;
Toth, A. L.;
Szymczak, R.;
Wosinski, T.

Publication type:

Article

A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 781, doi. 10.1007/s11664-010-1108-5

By:

González, M. A.;
Martínez, O.;
Jiménez, J.;
Frigeri, C.;
Weyher, J. L.

Publication type:

Article

Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 777, doi. 10.1007/s11664-010-1109-4

By:

Giles, A. J.;
Caldwell, J. D.;
Stahlbush, R. E.;
Hull, B. A.;
Mahadik, N. A.;
Glembocki, O. J.;
Hobart, K. D.;
Liu, K. X.

Publication type:

Article

Imaging of Metal Impurities in Silicon by Luminescence Spectroscopy and Synchrotron Techniques.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 787, doi. 10.1007/s11664-010-1114-7

By:

Schubert, Martin;
Schön, Jonas;
Gundel, Paul;
Habenicht, Holger;
Kwapil, Wolfram;
Warta, Wilhelm

Publication type:

Article

Characterization of Generation Lifetime and Surface Generation Velocity of Semiconductor Wafers by a Contactless Zerbst Method.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 773, doi. 10.1007/s11664-010-1126-3

By:

Yoshida, Haruhiko;
Kuge, Shingo

Publication type:

Article

Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 766, doi. 10.1007/s11664-010-1125-4

By:

Kaniewska, M.;
Engström, O.;
Kaczmarczyk, M.

Publication type:

Article

Effects of Chemical Treatment on the Luminescence of ZnO.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 761, doi. 10.1007/s11664-010-1124-5

By:

Dierre, B.;
Yuan, X. L.;
Armani, N.;
Fabbri, F.;
Salviati, G.;
Ueda, K.;
Sekiguchi, T.

Publication type:

Article

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 756, doi. 10.1007/s11664-010-1120-9

By:

Baeumler, Martina;
Gütle, Frank;
Polyakov, Vladimir;
Cäsar, Markus;
Dammann, Michael;
Konstanzer, Helmer;
Pletschen, Wilfried;
Bronner, Wolfgang;
Quay, Rüdiger;
Waltereit, Patrick;
Mikulla, Michael;
Ambacher, Oliver;
Bourgeois, Franck;
Behtash, Reza;
Riepe, Klaus;
Wel, Paul;
Klappe, Jos;
Rödle, Thomas

Publication type:

Article

Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 747, doi. 10.1007/s11664-010-1131-6

By:

Tajima, Michio;
Ikebe, Masatoshi;
Ohshita, Yoshio;
Ogura, Atsushi

Publication type:

Article

Phonon-Assisted Tunneling from Z1/ Z2 in 4H-SiC.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 751, doi. 10.1007/s11664-010-1132-5

By:

Evwaraye, A. O.

Publication type:

Article

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 743, doi. 10.1007/s11664-010-1143-2

By:

Twigg, M. E.;
Picard, Y. N.;
Caldwell, J. D.;
Eddy, JR., C. R.;
Mastro, M. A.;
Holm, R. T.;
Neudeck, P. G.;
Trunek, A. J.;
Powell, J. A.

Publication type:

Article

X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe Buffer Layers on Si and Ge Substrates.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 738, doi. 10.1007/s11664-010-1127-2

By:

Markunas, J. K.;
Almeida, L. A.;
Jacobs, R. N.;
Pellegrino, J.;
Qadri, S. B.;
Mahadik, N.;
Sanghera, J.

Publication type:

Article

Observation on Defects in Poly-Si Films Prepared by RTCVD Under Nonideal Conditions.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 732, doi. 10.1007/s11664-010-1145-0

By:

Bin Ai;
Hui Shen;
You-Jun Deng;
Chao Liu;
Xue-Qin Liang

Publication type:

Article

Structural Characterization of Doped GaSb Single Crystals by X-ray Topography.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 727, doi. 10.1007/s11664-010-1154-z

By:

Hönnicke, M. G.;
Mazzaro, I.;
Manica, J.;
Benine, E.;
Da Costa, E. M.;
Dedavid, B. A.;
Cusatis, C.;
Huang, X. R.

Publication type:

Article

Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 709, doi. 10.1007/s11664-010-1146-z

By:

Ziegler, Mathias;
Tomm, Jens W.;
Zeimer, Ute;
Elsaesser, Thomas

Publication type:

Article

Enhancement of Defect Production Rates in n-Type Silicon by Hydrogen Implantation Near 270 K.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 719, doi. 10.1007/s11664-010-1138-z

By:

Tokuda, Yutaka;
Nagae, Youichi;
Sakane, Hitoshi;
Ito, Jyoji

Publication type:

Article

Defect Imaging in Laser Diodes by Mapping Their Near-Infrared Emission.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 723, doi. 10.1007/s11664-010-1167-7

By:

Tomm, Jens W.;
Ziegler, Mathias;
Kissel, Heiko;
Biesenbach, Jens

Publication type:

Article

Quantitative Photoelastic Characterization of Residual Strains in Grains of Multicrystalline Silicon.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 700, doi. 10.1007/s11664-010-1164-x

By:

Fukuzawa, Masayuki;
Yamada, Masayoshi;
Rafiqul Islam, Md.;
Chen, Jun;
Sekiguchi, Takashi

Publication type:

Article

Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 688, doi. 10.1007/s11664-010-1156-x

By:

Chanson, R.;
Martin, A.;
Avella, M.;
Jiménez, J.;
Pommereau, F.;
Landesman, J. P.;
Rhallabi, A.

Publication type:

Article

Detailed Analysis of Temperature Characteristics of an InGaP/InGaAs/Ge Triple-Junction Solar Cell.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 6, p. 704, doi. 10.1007/s11664-010-1171-y

By:

Nishioka, Kensuke;
Sueto, Tsuyoshi;
Uchida, Masaki;
Ota, Yasuyuki

Publication type:

Article