Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 6
Results: 41
Determination of Piezoelectric Fields Across InGaN/GaN Quantum Wells by Means of Electron Holography.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 815, doi. 10.1007/s11664-010-1092-9
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LBIC and Reflectance Mapping of Multicrystalline Si Solar Cells.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 663, doi. 10.1007/s11664-010-1174-8
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Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 671, doi. 10.1007/s11664-010-1178-4
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Accelerated Light-Induced Degradation (ALID) for Monitoring of Defects in PV Silicon Wafers and Solar Cells.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 642, doi. 10.1007/s11664-010-1183-7
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Optical and Structural Properties of In<sub>0.08</sub>GaN/In<sub>0.02</sub>GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 677, doi. 10.1007/s11664-010-1159-7
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The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 656, doi. 10.1007/s11664-010-1177-5
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Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 620, doi. 10.1007/s11664-010-1217-1
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Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 684, doi. 10.1007/s11664-010-1168-6
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Influence of Operating Conditions on Quantum Cascade Laser Temperature.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 630, doi. 10.1007/s11664-010-1213-5
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Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 694, doi. 10.1007/s11664-010-1148-x
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Evolution of Optical and Mechanical Properties of Semiconductors over 40 Years.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 635, doi. 10.1007/s11664-010-1170-z
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Defect-Related White-Light Emission from ZnO in an n-Mg<sub>0.2</sub>Zn<sub>0.8</sub>O/ n-ZnO/SiO<sub> x</sub> Heterostructure on n-Si.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 652, doi. 10.1007/s11664-010-1173-9
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- Article
Threading Screw Dislocations in 4H-SiC Wafer Observed by the Weak-Beam Method in Bragg-Case X-ray Topography.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 715, doi. 10.1007/s11664-010-1158-8
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Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 648, doi. 10.1007/s11664-010-1197-1
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Foreword.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 619, doi. 10.1007/s11664-010-1223-3
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Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 625, doi. 10.1007/s11664-010-1212-6
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Synchrotron X-Ray Topography Study of Structural Defects and Strain in Epitaxial Structures of Yb- and Tm-Doped Potassium Rare-Earth Double Tungstates and Their Influence on Laser Performance.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 823, doi. 10.1007/s11664-010-1226-0
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Electron Scattering Mechanism of FTO Films Grown by Spray Pyrolysis Method.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 819, doi. 10.1007/s11664-010-1225-1
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Effects of Crystal-Induced Optical Incoherence in Electro-Optic Field Sensors.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 811, doi. 10.1007/s11664-010-1103-x
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Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 799, doi. 10.1007/s11664-010-1105-8
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Cathodoluminescence Study of Orientation-Patterned GaAs Crystals for Nonlinear Optics.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 805, doi. 10.1007/s11664-010-1106-7
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Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 794, doi. 10.1007/s11664-010-1123-6
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A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 781, doi. 10.1007/s11664-010-1108-5
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Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 777, doi. 10.1007/s11664-010-1109-4
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Imaging of Metal Impurities in Silicon by Luminescence Spectroscopy and Synchrotron Techniques.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 787, doi. 10.1007/s11664-010-1114-7
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Characterization of Generation Lifetime and Surface Generation Velocity of Semiconductor Wafers by a Contactless Zerbst Method.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 773, doi. 10.1007/s11664-010-1126-3
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Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 766, doi. 10.1007/s11664-010-1125-4
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Effects of Chemical Treatment on the Luminescence of ZnO.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 761, doi. 10.1007/s11664-010-1124-5
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Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 756, doi. 10.1007/s11664-010-1120-9
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Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 747, doi. 10.1007/s11664-010-1131-6
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Phonon-Assisted Tunneling from Z<sub>1</sub>/ Z<sub>2</sub> in 4H-SiC.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 751, doi. 10.1007/s11664-010-1132-5
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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 743, doi. 10.1007/s11664-010-1143-2
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X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe Buffer Layers on Si and Ge Substrates.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 738, doi. 10.1007/s11664-010-1127-2
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Observation on Defects in Poly-Si Films Prepared by RTCVD Under Nonideal Conditions.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 732, doi. 10.1007/s11664-010-1145-0
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Structural Characterization of Doped GaSb Single Crystals by X-ray Topography.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 727, doi. 10.1007/s11664-010-1154-z
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- Article
Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 709, doi. 10.1007/s11664-010-1146-z
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- Article
Enhancement of Defect Production Rates in n-Type Silicon by Hydrogen Implantation Near 270 K.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 719, doi. 10.1007/s11664-010-1138-z
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- Article
Quantitative Photoelastic Characterization of Residual Strains in Grains of Multicrystalline Silicon.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 700, doi. 10.1007/s11664-010-1164-x
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Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 688, doi. 10.1007/s11664-010-1156-x
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Defect Imaging in Laser Diodes by Mapping Their Near-Infrared Emission.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 723, doi. 10.1007/s11664-010-1167-7
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- Article
Detailed Analysis of Temperature Characteristics of an InGaP/InGaAs/Ge Triple-Junction Solar Cell.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 704, doi. 10.1007/s11664-010-1171-y
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- Article