Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 5
Results: 14
Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 478, doi. 10.1007/s11664-010-1111-x
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- Article
Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating Yield.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 530, doi. 10.1007/s11664-009-1028-4
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- Article
Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AlN and GaN Sub-Layers and Observation of Compositional Inhomogeneity.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 466, doi. 10.1007/s11664-010-1098-3
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Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 595, doi. 10.1007/s11664-009-1017-7
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Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 554, doi. 10.1007/s11664-009-0995-9
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- Article
The E3 Defect in Mg<sub> x</sub>Zn<sub>1− x</sub>O.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 584, doi. 10.1007/s11664-009-0967-0
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- Article
Low-Temperature Preparation of Undoped ZnO Films with High Transparency and Conductivity by Ion Beam Deposition.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 612, doi. 10.1007/s11664-010-1130-7
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- Article
Dielectric Passivation of ZnO-Based Schottky Diodes.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 559, doi. 10.1007/s11664-009-0974-1
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- Article
Dual-Gate Multiple-Channel ZnO Nanowire Transistors.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 563, doi. 10.1007/s11664-009-0984-z
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- Article
Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 601, doi. 10.1007/s11664-009-0973-2
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- Article
Effect of Post-Deposition Processing on ZnO Thin Films and Devices.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 568, doi. 10.1007/s11664-009-0999-5
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- Article
Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 608, doi. 10.1007/s11664-009-1022-x
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- Article
Multiple Magnetic States of Silicon Carbide Diluted Magnetic Semiconductors.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 545, doi. 10.1007/s11664-009-1023-9
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- Article
Identification of a Deep Acceptor Level in ZnO Due to Silver Doping.
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- Journal of Electronic Materials, 2010, v. 39, n. 5, p. 577, doi. 10.1007/s11664-009-1025-7
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- Article