Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 4


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    Growth and Characterization of Unintentionally Doped GaSb Nanowires.

    Published in:
    Journal of Electronic Materials, 2010, v. 39, n. 4, p. 355, doi. 10.1007/s11664-010-1140-5
    By:
    • Burke, Robert A.;
    • Xiaojun Weng;
    • Meng-Wei Kuo;
    • Young-Wook Song;
    • Itsuno, Anne M.;
    • Mayer, Theresa S.;
    • Durbin, Steven M.;
    • Reeves, Roger J.;
    • Redwing, Joan M.
    Publication type:
    Article
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