Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 10

Results: 26

Surface-Modified Titania Nanoparticles with Conjugated Polymer for Hybrid Photovoltaic Devices.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2346, doi. 10.1007/s11664-010-1137-0

By:

Hongwei Geng;
Ruixiang Peng;
Shikui Han;
Xiaohong Gu;
Mingtai Wang

Publication type:

Article

Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2210, doi. 10.1007/s11664-010-1298-x

By:

Banerjee, Koushik;
Ghosh, Siddhartha;
Plis, Elena;
Krishna, Sanjay

Publication type:

Article

Thermodynamic Properties of Liquid Ag-Au-Sn Alloys.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2310, doi. 10.1007/s11664-010-1292-3

By:

Hindler, M.;
Knott, S.;
Mikula, A.

Publication type:

Article

AlGaSb Buffer Layers for Sb-Based Transistors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2196, doi. 10.1007/s11664-010-1295-0

By:

Bennett, Brian;
Khan, Saara;
Boos, J.;
Papanicolaou, Nicolas;
Kuznetsov, Vladimir

Publication type:

Article

Analysis of Ultraviolet Curing Effect on the Dielectric Constant and Molecular Structure of a Porous Dielectric Film.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2337, doi. 10.1007/s11664-010-1297-y

By:

Smith, Ryan;
Tsui, Ting;
Ho, Paul S.

Publication type:

Article

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2237, doi. 10.1007/s11664-010-1304-3

By:

Xu, Hui;
Alur, Siddharth;
Wang, Yaqi;
Cheng, An-Jen;
Kang, Kilho;
Sharma, Yogeshkumar;
Park, Minseo;
Ahyi, Claude;
Williams, John;
Gu, Chaokang;
Hanser, Andrew;
Paskova, Tanya;
Preble, Edward;
Evans, Keith;
Zhou, Yi

Publication type:

Article

Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2233, doi. 10.1007/s11664-010-1264-7

By:

Byun, Ki;
Ferain, Isabelle;
Song, Scott;
Holl, Susan;
Colinge, Cindy

Publication type:

Article

Viscoplastic Creep Response and Microstructure of As-Fabricated Microscale Sn-3.0Ag-0.5Cu Solder Interconnects.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2292, doi. 10.1007/s11664-010-1296-z

By:

Cuddalorepatta, Gayatri;
Williams, Maureen;
Dasgupta, Abhijit

Publication type:

Article

Improved Synthesis of Superconducting Carbon-Doped MgB Using a Biopolymer for Simultaneous Crystallite Size Control and Chemical Reduction.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2332, doi. 10.1007/s11664-010-1307-0

By:

Hall, Simon R.;
Howells, Jemima L.F.;
Wimbush, Stuart C.

Publication type:

Article

Interfacial Reactions and Joint Strengths of Sn- xZn Solders with Immersion Ag UBM.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2286, doi. 10.1007/s11664-010-1308-z

By:

Jee, Y. k.;
Jin Yu

Publication type:

Article

Void Growth Behavior in ULSI Cu Interconnections by Grain-Boundary Diffusion Simulation.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2255, doi. 10.1007/s11664-010-1311-4

By:

Takashi Onishi;
MasaoMizuno;
Tetsuya Yoshikawa;
Jun Munemasa;
Takao Inoue;
Aki Miyagaki;
Hisashi Nakamoto

Publication type:

Article

High-Performance MWIR/LWIR Dual-Band 640 × 480 HgCdTe/Si FPAs.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2215, doi. 10.1007/s11664-010-1294-1

By:

Patten, E. A.;
Goetz, P. M.;
Vilela, M. F.;
Olsson, K.;
Lofgreen, D. D.;
Vodicka, J. G.;
Johnson, S. M.

Publication type:

Article

Exact Analytical Solution for the Critical Layer Thickness of a Lattice-Mismatched Heteroepitaxial Layer.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2248, doi. 10.1007/s11664-010-1290-5

By:

Hadj Belgacem, C.;
Fnaiech, M.

Publication type:

Article

Effect of Cooling Rate on Microstructural Homogeneity and Grain Size of n-Type Si-Ge Thermoelectric Alloy by Melt Spinning.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2251, doi. 10.1007/s11664-010-1314-1

By:

Pan Zhang;
Zhong Wang;
Hui Chen;
Haijun Yu;
Lei Zhu;
Xuyu Jian

Publication type:

Article

Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2203, doi. 10.1007/s11664-010-1242-0

By:

Kutty, M. N.;
Plis, E.;
Khoshakhlagh, A.;
Myers, S.;
Gautam, N.;
Smolev, S.;
Sharma, Y. D.;
Dawson, R.;
Krishna, S.;
Lee, S. J.;
Noh, S. K.

Publication type:

Article

Intermetallic Compound Growth and Reliability of Cu Pillar Bumps Under Current Stressing.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2281, doi. 10.1007/s11664-010-1324-z

By:

Byoung-Joon Kim;
Gi-Tae Lim;
Jaedong Kim;
Kiwook Lee;
Young-Bae Park;
Ho-Young Lee;
Young-Chang Joo

Publication type:

Article

Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2352, doi. 10.1007/s11664-010-1328-8

By:

Shen, Jung-Hsiung;
Yeh, Sung-Wei;
Gan, Dershin;
Yang, Koho;
Huang, Hsing-Lu;
Mao, Shih-Wei

Publication type:

Article

Electrically Conductive Thick Film Made from Silver Alkylcarbamates.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2267, doi. 10.1007/s11664-010-1327-9

By:

Jianguo Liu;
Xiangyou Li;
Xiaoye Wang;
Xiaoyan Zeng

Publication type:

Article

High-Temperature Resistant Intermetallic Compound Joints for Si Chips and Cu Substrates.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2274, doi. 10.1007/s11664-010-1326-x

By:

Toshihide Takahashi;
Shuichi Komatsu;
Hiroshi Nishikawa;
Tadashi Takemoto

Publication type:

Article

Effect of Al-Trace Width on the Electromigration Failure Time of Flip-Chip Solder Joints.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2316, doi. 10.1007/s11664-010-1333-y

By:

Liang, S.;
Hsiao, H.;
Chen, Chih

Publication type:

Article

Numerical Modeling of IR-Laser-Irradiated HgCdTe.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2220, doi. 10.1007/s11664-010-1321-2

By:

Storebo, Asta;
Brudevoll, Trond;
Stenersen, Knut

Publication type:

Article

Thermal Aging Effects on Cu Ball Shear Strength and Cu/Al Intermetallic Growth.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2324, doi. 10.1007/s11664-010-1320-3

By:

Amistoso, Jose;
Amorsolo, Alberto

Publication type:

Article

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2177, doi. 10.1007/s11664-010-1334-x

By:

Singh, R.;
Christiansen, S. H.;
Moutanabbir, O.;
Gösele, U.

Publication type:

Article

Study of LDPE/TiO and PS/TiO Composites as Potential Substrates for Microstrip Patch Antennas.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2359, doi. 10.1007/s11664-010-1335-9

By:

Sarmah, Debashis;
Deka, Juti;
Bhattacharyya, Satyajib;
Bhattacharyya, Nidhi

Publication type:

Article

Large-Scale Synthesis of Graphene Films by Joule-Heating-Induced Chemical Vapor Deposition.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2190, doi. 10.1007/s11664-010-1340-z

By:

Jung Min Lee;
Hae Yong Jeong;
Won Il Park

Publication type:

Article

Dislocation Clustering and Luminescence Nonuniformity in Bulk GaN and Its Homoepitaxial Film.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 10, p. 2243, doi. 10.1007/s11664-009-1040-8

By:

Fuxue Wang;
Hai Lu;
Xiangqian Xiu;
Dunjun Chen;
Rong Zhang;
Youdou Zheng

Publication type:

Article