Works matching IS 03615235 AND DT 2010 AND VI 39 AND IP 1
Results: 21
Growth of Epitaxial (110) 0.7Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.3PbTiO<sub>3</sub> Thin Films on r-Plane Sapphire Substrates by RF Magnetron Sputtering.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 132, doi. 10.1007/s11664-009-0945-6
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- Article
Growth of Intermetallic Compounds in Thermosonic Copper Wire Bonding on Aluminum Metallization.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 124, doi. 10.1007/s11664-009-0951-8
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Application of an Artificial Intelligence Technique to Improve Purification in the Zone Refining Process.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 49, doi. 10.1007/s11664-009-0947-4
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- Article
Intermetallic Formation and Fluidity in Sn-Rich Sn-Cu-Ni Alloys.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 56, doi. 10.1007/s11664-009-0962-5
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- Article
Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 39, doi. 10.1007/s11664-009-0963-4
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- Article
Size and Substrate Effects upon Undercooling of Pb-Free Solders.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 109, doi. 10.1007/s11664-009-0966-1
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- Article
Synthesis and Characterization of p-Type Pb<sub>0.5</sub>Sn<sub>0.5</sub>Te Thermoelectric Power Generation Elements by Mechanical Alloying.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 8, doi. 10.1007/s11664-009-0989-7
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- Article
Conductive Anodic Filament (CAF) Formation Part I: the Influence of Water-Soluble Flux on Its Formation.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 85, doi. 10.1007/s11664-009-0964-3
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Conductive Anodic Filament Formation Part II: Electrochemical Reactions Leading to CAF.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 92, doi. 10.1007/s11664-009-0965-2
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- Article
Compression Stress–Strain Behavior of Sn-Ag-Cu Solders.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 97, doi. 10.1007/s11664-009-0968-z
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Effects of Trace Elements in Copper Fillers on the Electrical Properties of Conductive Adhesives.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 115, doi. 10.1007/s11664-009-0946-5
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- Article
Temperature-Dependent Studies of Si-Implanted Al<sub>0.33</sub>Ga<sub>0.67</sub>N with Different Annealing Temperatures and Times.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 21, doi. 10.1007/s11664-009-0948-3
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- Article
Influence of Surface Modification with Carboxylic Acids on Performance of Polymer/Titania Photovoltaic Devices.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 1, doi. 10.1007/s11664-009-0954-5
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- Article
Multiscale Simulation of Microstructural Changes in Solder Interconnections During Thermal Cycling.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 77, doi. 10.1007/s11664-009-0957-2
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- Article
Physical Properties of Sn<sub>96.5</sub>Ag<sub>3.5</sub>-Based Solders with Additions of Bi, Ge, and In.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 70, doi. 10.1007/s11664-009-0952-7
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- Article
Interfacial Effects in the Relaxation Dynamics of Silver Nanometal-Glass Composites Probed by Transient Grating Spectroscopy.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 138, doi. 10.1007/s11664-009-0961-6
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- Article
High-Sensitivity Nitride-Based Ultraviolet Photosensors with a Low-Temperature AlGaN Interlayer.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 29, doi. 10.1007/s11664-009-0960-7
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- Article
Tin Pest in Sn-0.5Cu Lead-Free Solder Alloys: A Chemical Analysis of Trace Elements.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 105, doi. 10.1007/s11664-009-0958-1
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- Article
Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 15, doi. 10.1007/s11664-009-0969-y
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Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 43, doi. 10.1007/s11664-009-0956-3
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Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth.
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- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 34, doi. 10.1007/s11664-009-0953-6
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- Article