Works matching IS 03615235 AND DT 2009 AND VI 38 AND IP 9

Results: 28

Electrical Properties of Isotropic Conductive Adhesives Composed of Silicone-Based Elastomer Binders Containing Ag Particles.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 2013, doi. 10.1007/s11664-009-0837-9

By:

Inoue, Masahiro;
Muta, Hiroaki;
Yamanaka, Shinsuke;
Suganuma, Katsuaki

Publication type:

Article

p-Type PbTe Thermoelectric Bulk Materials with Nanograins Fabricated by Attrition Milling and Spark Plasma Sintering.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1956, doi. 10.1007/s11664-009-0677-7

By:

Chia-Hung Kuo;
Ming-Shan Jeng;
Jie-Ren Ku;
Shih-Kuo Wu;
Ya-Wen Chou;
Chii-Shyang Hwang

Publication type:

Article

Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 (110) Substrate.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1952, doi. 10.1007/s11664-009-0796-1

By:

D. Li;
S. Mukherjee;
J. Ma;
G. Bi;
Ray, D.;
F. Zhao;
Elizondo, S. L.;
G. Yu;
Z. Shi

Publication type:

Article

Monitoring the Growth of the α Phase in Tin Alloys by Electrical Resistance Measurements.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1874, doi. 10.1007/s11664-009-0822-3

By:

Di Maio, D.;
Hunt, C. P.

Publication type:

Article

Femtosecond Laser Drilling of Alumina Wafers.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 2006, doi. 10.1007/s11664-009-0811-6

By:

Chengde Li;
Seongkuk Lee;
Nikumb, Suwas

Publication type:

Article

Synthesis and Characterization of Naphthalene End-Capped Divinylbenzene for OTFT.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 2000, doi. 10.1007/s11664-009-0830-3

By:

Sung Jin Park;
Sul Ong Kim;
Sung Ouk Jung;
Mi-Hye Yi;
Yun-Hi Kim;
Soon-Ki Kwon

Publication type:

Article

Low Fatigue in Epitaxial Pb(Zr0.2Ti0.8)O3 on Si Substrates with LaNiO3 Electrodes by RF Sputtering.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1921, doi. 10.1007/s11664-009-0836-x

By:

Chun Wang;
Kryder, Mark H.

Publication type:

Article

Characterization of Zn1− xMg xO Films Prepared by the Sol–Gel Process and Their Application for Thin-Film Transistors.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1962, doi. 10.1007/s11664-009-0835-y

By:

Chien-Yie Tsay;
Min-Chi Wang;
Shin-Chuan Chiang

Publication type:

Article

Two Layer Surface Exfoliation on Si3N4/Si by Sequential Implantation of He and H Ions.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1990, doi. 10.1007/s11664-009-0768-5

By:

Mengkai Li;
Zhuo Wang;
Changlong Liu;
Junqi Liao;
Yanyan Shen;
Lili Zhang;
Bing Yuan

Publication type:

Article

Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1926, doi. 10.1007/s11664-009-0862-8

By:

Rudawski, N. G.;
Whidden, L. R.;
Craciun, V.;
Jones, K. S.

Publication type:

Article

Study of Solidification Cracks in Sn-Ag-Cu Lead-Free Solder Joints.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1906, doi. 10.1007/s11664-009-0839-7

By:

Wenxing Dong;
Yaowu Shi;
Yongping Lei;
Zhidong Xia;
Fu Guo

Publication type:

Article

Constitutive Relations for Creep in a SnCu-Based Composite Solder Reinforced with Ag Particles.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1866, doi. 10.1007/s11664-009-0840-1

By:

Yaowu Shi;
Yanfu Yan;
Jianping Liu;
Zhidong Xia;
Yongping Lei;
Fu Guo;
Xiaoyan Li

Publication type:

Article

Interband Cascade Lasers with Wavelengths Spanning 3.2–4.2 μm.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1948, doi. 10.1007/s11664-009-0733-3

By:

Canedy, C. L.;
Lindle, J. R.;
Bewley, W. W.;
Kim, C. S.;
Kim, M.;
Nolde, J. A.;
Vurgaftman, I.;
Meyer, J. R.

Publication type:

Article

Electrical Properties of Organic–Inorganic Semiconductor Device Based on Rhodamine-101.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1995, doi. 10.1007/s11664-009-0838-8

By:

Çakar, M.;
Güllü, Ö.;
Yildirim, N.;
Türüt, A.

Publication type:

Article

Preparation and Characterization of Ultrasonically Sprayed Zinc Oxide Thin Films Doped with Lithium.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1969, doi. 10.1007/s11664-009-0828-x

By:

Bilgin, Vildan

Publication type:

Article

How r-Plane Al2O3 Surface Modifications Impact the Growth of Epitaxial (001) CeO2 Thin Films.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1931, doi. 10.1007/s11664-009-0864-6

By:

Sunder, Madhana;
Moran, P. D.

Publication type:

Article

Spreading Kinetics of Liquid Solders over an Intermetallic Solid Surface. Part 1: Eutectic Lead Solder.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1838, doi. 10.1007/s11664-009-0869-1

By:

H. Zhao;
H. Q. Wang;
Sekulic, D. P.;
Y. Y. Qian

Publication type:

Article

Spreading Kinetics of Liquid Solders over an Intermetallic Solid Surface. Part 2: Lead-Free Solders.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1846, doi. 10.1007/s11664-009-0870-8

By:

H. Zhao;
H. Q. Wang;
Sekulic, D. P.;
Y. Y.Qian

Publication type:

Article

Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part II: Experimental Study.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1826, doi. 10.1007/s11664-009-0882-4

By:

Vianco, P. T.;
Rejent, J. A.

Publication type:

Article

Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part I: A Model.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1815, doi. 10.1007/s11664-009-0879-z

By:

Vianco, P. T.;
Rejent, J. A.

Publication type:

Article

Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low- k Samples.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1913, doi. 10.1007/s11664-009-0843-y

By:

Kohama, Kazuyuki;
Ito, Kazuhiro;
Mori, Kenichi;
Maekawa, Kazuyoshi;
Shirai, Yasuharu;
Murakami, Masanori

Publication type:

Article

A Novel Mechanism of Embrittlement Affecting the Impact Reliability of Tin-Based Lead-Free Solder Joints.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1881, doi. 10.1007/s11664-009-0841-0

By:

Lambrinou, Konstantina;
Maurissen, Wout;
Limaye, Paresh;
Vandevelde, Bart;
Verlinden, Bert;
Wolf, Ingrid

Publication type:

Article

Fracture Mechanics of Solder Bumps During Ball Shear Testing: Effect of Bump Size.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1896, doi. 10.1007/s11664-009-0842-z

By:

Woong Ho Bang;
Choong-Un Kim;
Suk Hoon Kang;
Kyu Hwan Oh

Publication type:

Article

Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1979, doi. 10.1007/s11664-009-0846-8

By:

Bhatt, Vivekanand;
Chandra, Sudhir

Publication type:

Article

Intermetallic Reaction of Indium and Silver in an Electroplating Process.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1860, doi. 10.1007/s11664-009-0845-9

By:

Pin Wang;
Jong Kim;
Chin Lee

Publication type:

Article

Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1938, doi. 10.1007/s11664-009-0847-7

By:

J. N. Dai;
Z. H. Wu;
C. H. Yu;
Q. Zhang;
Y. Q. Sun;
Y. K. Xiong;
X. Y. Han;
L. Z. Tong;
Q. H. He;
F. A. Ponce;
C. Q. Chen

Publication type:

Article

Constitutive Relations of Indium in Extreme-Temperature Electronic Packaging Based on Anand Model.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1855, doi. 10.1007/s11664-009-0765-8

By:

Rui Chang;
McCluskey, F.

Publication type:

Article

Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 9, p. 1944, doi. 10.1007/s11664-009-0850-z

By:

Banerjee, Koushik;
Ghosh, Siddhartha;
Mallick, Shubhrangshu;
Plis, Elena;
Krishna, Sanjay

Publication type:

Article

Works matching IS 03615235 AND DT 2009 AND VI 38 AND IP 9

Electrical Properties of Isotropic Conductive Adhesives Composed of Silicone-Based Elastomer Binders Containing Ag Particles.

p-Type PbTe Thermoelectric Bulk Materials with Nanograins Fabricated by Attrition Milling and Spark Plasma Sintering.

Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF<sub>2</sub> (110) Substrate.

Monitoring the Growth of the α Phase in Tin Alloys by Electrical Resistance Measurements.

Femtosecond Laser Drilling of Alumina Wafers.

Synthesis and Characterization of Naphthalene End-Capped Divinylbenzene for OTFT.

Low Fatigue in Epitaxial Pb(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub> on Si Substrates with LaNiO<sub>3</sub> Electrodes by RF Sputtering.

Characterization of Zn<sub>1− x</sub>Mg<sub> x</sub>O Films Prepared by the Sol–Gel Process and Their Application for Thin-Film Transistors.

Two Layer Surface Exfoliation on Si<sub>3</sub>N<sub>4</sub>/Si by Sequential Implantation of He and H Ions.

Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si.

Study of Solidification Cracks in Sn-Ag-Cu Lead-Free Solder Joints.

Constitutive Relations for Creep in a SnCu-Based Composite Solder Reinforced with Ag Particles.

Interband Cascade Lasers with Wavelengths Spanning 3.2–4.2 μm.

Electrical Properties of Organic–Inorganic Semiconductor Device Based on Rhodamine-101.

Preparation and Characterization of Ultrasonically Sprayed Zinc Oxide Thin Films Doped with Lithium.

How r-Plane Al<sub>2</sub>O<sub>3</sub> Surface Modifications Impact the Growth of Epitaxial (001) CeO<sub>2</sub> Thin Films.

Spreading Kinetics of Liquid Solders over an Intermetallic Solid Surface. Part 1: Eutectic Lead Solder.

Spreading Kinetics of Liquid Solders over an Intermetallic Solid Surface. Part 2: Lead-Free Solders.

Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part II: Experimental Study.

Dynamic Recrystallization (DRX) as the Mechanism for Sn Whisker Development. Part I: A Model.

Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low- k Samples.

A Novel Mechanism of Embrittlement Affecting the Impact Reliability of Tin-Based Lead-Free Solder Joints.

Fracture Mechanics of Solder Bumps During Ball Shear Testing: Effect of Bump Size.

Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS.

Intermetallic Reaction of Indium and Silver in an Electroplating Process.

Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers.

Constitutive Relations of Indium in Extreme-Temperature Electronic Packaging Based on Anand Model.

Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes.