Works matching IS 03615235 AND DT 2009 AND VI 38 AND IP 8

Results: 42

Topography and Dislocations in (112)B HgCdTe/CdTe/Si.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1771, doi. 10.1007/s11664-009-0758-7

By:

Benson, J. D.;
Smith, P. J.;
Jacobs, R. N.;
Markunas, J. K.;
Jaime-Vasquez, M.;
Almeida, L. A.;
Stoltz, A.;
Bubulac, L. O.;
Groenert, M.;
Wijewarnasuriya, P. S.;
Brill, G.;
Chen, Y.;
Lee, U.

Publication type:

Article

Generation-Recombination Effect in High-Temperature HgCdTe Heterostructure Nonequilibrium Photodiodes.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1666, doi. 10.1007/s11664-009-0752-0

By:

Jóźwikowski, K.;
Piotrowski, J.;
Gawron, W.;
Rogalski, A.;
Piotrowski, A.;
Pawluczyk, J.;
Jóźwikowska, A.;
Rutkowski, J.;
Kopytko, M.

Publication type:

Article

AFM Characterization of Raman Laser-Induced Damage on CdZnTe Crystal Surfaces.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1522, doi. 10.1007/s11664-009-0763-x

By:

Teague, Lucile C.;
Hawkins, Samantha A.;
Duff, Martine C.;
Groza, Michael;
Buliga, Vladimir;
Burger, Arnold

Publication type:

Article

Strained and Unstrained Layer Superlattices for Infrared Detection.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1800, doi. 10.1007/s11664-009-0757-8

By:

Grein, C. H.;
Garland, J.;
Flatté, M. E.

Publication type:

Article

Effects of Annealing in a Partially Reducing Atmosphere on Sputtered Al-Doped ZnO Thin Films.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1568, doi. 10.1007/s11664-009-0747-x

By:

Lennon, C.;
Tapia, R. B.;
Kodama, R.;
Chang, Y.;
Sivananthan, S.;
Deshpande, M.

Publication type:

Article

Structural Characterization of Integrated II–VI and III–V Heterostructures for Solar Cell Applications.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1558, doi. 10.1007/s11664-009-0746-y

By:

Zhang, X.;
Wang, S.;
Ding, D.;
Liu, X.;
Tan, J.-H.;
Furdyna, J. K.;
Zhang, Y.-H.;
Smith, D. J.

Publication type:

Article

Characterization of CdTe and HgCdTe by Photo-Thermal Excitation Spectroscopy.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1533, doi. 10.1007/s11664-009-0696-4

By:

Furstenberg, Robert;
Papantonakis, Michael R.;
Kendziora, C. A.

Publication type:

Article

Spectral Response Model for Front-Side-Illuminated Detectors.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1624, doi. 10.1007/s11664-009-0782-7

By:

Robinson, E.;
D'Souza, A. I.;
Stapelbroek, M. G.;
Skokan, M. R.;
Kinch, M. A.;
Shih, H. D.;
Wijewarnasuriya, Priyalal S.

Publication type:

Article

Critical Thickness of Exponentially and Linearly Graded HgCdTe/CdZnTe.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1690, doi. 10.1007/s11664-009-0801-8

By:

Fulk, C.;
Parodos, T.;
Lamarre, P.;
Tobin, S.;
LoVecchio, P.;
Markunas, J.

Publication type:

Article

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1574, doi. 10.1007/s11664-009-0755-x

By:

Jain, F. C.;
Suarez, E.;
Gogna, M.;
Alamoody, F.;
Butkiewicus, D.;
Hohner, R.;
Liaskas, T.;
Karmakar, S.;
Chan, P.-Y.;
Miller, B.;
Chandy, J.;
Heller, E.

Publication type:

Article

Multifunctional ZnO-Based Thin-Film Bulk Acoustic Resonator for Biosensors.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1605, doi. 10.1007/s11664-009-0813-4

By:

Chen, Ying;
Reyes, Pavel I.;
Duan, Ziqing;
Saraf, Gaurav;
Wittstruck, Richard;
Lu, Yicheng;
Taratula, Olena;
Galoppini, Elena

Publication type:

Article

Extended X-ray Absorption Fine Structure Investigation of Arsenic in HgCdTe: the Effect of the Activation Anneal.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1726, doi. 10.1007/s11664-009-0810-7

By:

Ballet, P.;
Polge, B.;
Biquard, X.;
Alliot, I.

Publication type:

Article

Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1600, doi. 10.1007/s11664-009-0807-2

By:

Licausi, Nicholas;
Yuan, Wen;
Tang, Fu;
Parker, Thomas;
Li, Huafang;
Wang, Gwo-Ching;
Lu, Toh-Ming;
Bhat, Ishwara

Publication type:

Article

Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Using Ge Interfacial Layer.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1618, doi. 10.1007/s11664-009-0719-1

By:

Rao, S. R.;
Shintri, S. S.;
Bhat, I. B.

Publication type:

Article

Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1790, doi. 10.1007/s11664-009-0802-7

By:

Perrais, Gwladys;
Derelle, Sophie;
Mollard, Laurent;
Chamonal, Jean-Paul;
Destefanis, Gerard;
Vincent, Gilbert;
Bernhardt, Sylvie;
Rothman, Johan

Publication type:

Article

HgCdTe p-on- n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1684, doi. 10.1007/s11664-009-0794-3

By:

Gravrand, O.;
Ballet, Ph.;
Baylet, J.;
Baier, N.

Publication type:

Article

Empirical Pseudopotential and Full-Brillouin-Zone k · p Electronic Structure of CdTe, HgTe, and Hg1− xCd xTe.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1717, doi. 10.1007/s11664-009-0798-z

By:

Penna, Michele;
Marnetto, Alberto;
Bertazzi, Francesco;
Bellotti, Enrico;
Goano, Michele

Publication type:

Article

Chemical–Mechanical Polishing of CdTe and Zn xCd1− xTe Single Crystals by H2O2(HNO3)–HBr–Organic Solvent Etchant Compositions.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1637, doi. 10.1007/s11664-009-0692-8

By:

Tomashik, Z. F.;
Tomashik, V. M.;
Stratiychuk, I. B.;
Okrepka, G. M.;
Hnativ, I. I.;
Moravec, P.;
Höschl, P.;
Bok, J.

Publication type:

Article

A Scanning Probe Microscopy Study of Cd1− xZn xTe.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1528, doi. 10.1007/s11664-009-0693-7

By:

Egan, C. K.;
Dabrowski, P.;
Klusek, Z.;
Brinkman, A. W.

Publication type:

Article

Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1764, doi. 10.1007/s11664-009-0814-3

By:

Reddy, M.;
Peterson, J. M.;
Johnson, S. M.;
Vang, T.;
Franklin, J. A.;
Patten, E. A.;
Radford, W. A.;
Bangs, J. W.;
Lofgreen, D. D.

Publication type:

Article

A Novel Stress Characterization Technique for the Development of Low-Stress Ohmic Contacts to HgCdTe.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1698, doi. 10.1007/s11664-009-0790-7

By:

D'Orsogna, D.;
Lamarre, P.;
Bellotti, E.;
Barbone, P. E.;
Smith, F.;
Fulk, C.;
LoVecchio, P.;
Reine, M. B.;
Tobin, S. P.;
Markunas, J.

Publication type:

Article

Dye-Sensitized Solar Cells Combining ZnO Nanotip Arrays and Nonliquid Gel Electrolytes.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1612, doi. 10.1007/s11664-009-0800-9

By:

Chen, Hanhong;
Duan, Ziqing;
Lu, Yicheng;
Du Pasquier, Aurelien

Publication type:

Article

Chemical Interaction of CdTe and CdZnTe with Aqueous Solutions of H2O2-HI-Tartaric Acid.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1645, doi. 10.1007/s11664-009-0787-2

By:

Moravec, P.;
Ivanits'ka, V.G.;
Franc, J.;
Tomashik, Z. F.;
Tomashik, V. M.;
Mašek, K.;
Feychuk, P. I.;
Shcherbak, L. P.;
Höschl, P.;
Grill, R.;
Walter, J.

Publication type:

Article

Performance and Modeling of the MWIR HgCdTe Electron Avalanche Photodiode.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1579, doi. 10.1007/s11664-009-0684-8

By:

Beck, Jeffrey;
Scritchfield, Richard;
Sullivan, Billy;
Teherani, Jamie;
Wan, Chang-Feng;
Kinch, Mike;
Ohlson, Martha;
Skokan, Mark;
Wood, Lewis;
Mitra, Pradip;
Goodwin, Mike;
Robinson, Jim

Publication type:

Article

Vanadium-Doped Cadmium Manganese Telluride (Cd1− xMn xTe) Crystals as X- and Gamma-Ray Detectors.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1593, doi. 10.1007/s11664-009-0780-9

By:

Hossain, A.;
Cui, Y.;
Bolotnikov, A. E.;
Camarda, G. S.;
Yang, G.;
Kochanowska, D.;
Witkowska-Baran, M.;
Mycielski, A.;
James, R. B.

Publication type:

Article

In Situ Spectroscopic Ellipsometry of Rough Surfaces: Application to CdTe(211)B/Ge(211) Grown by Molecular-Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1652, doi. 10.1007/s11664-009-0783-6

By:

Badano, Giacomo;
Baudry, Xavier;
Robin, Ivan C.

Publication type:

Article

Characterization of Dislocations in HgCdTe Heteroepitaxial Layers Using a New Substrate Removal Technique.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1746, doi. 10.1007/s11664-009-0771-x

By:

Lamarre, P.;
Fulk, C.;
D'Orsogna, D.;
Bellotti, E.;
Smith, F.;
LoVecchio, P.;
Reine, M. B.;
Parodos, T.;
Marciniec, J.;
Tobin, S.;
Markunas, J.

Publication type:

Article

The Effect of Wet Etching on Surface Properties of HgCdTe.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1781, doi. 10.1007/s11664-009-0844-x

By:

Sporken, R.;
Kiran, R.;
Casselman, T.;
Aqariden, F.;
Velicu, S.;
Chang, Yong;
Sivananthan, S.

Publication type:

Article

Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1628, doi. 10.1007/s11664-009-0827-y

By:

Derelle, S.;
Bernhardt, S.;
Haidar, R.;
Deschamps, J.;
Primot, J.;
Rothman, J.;
Rommeluere, S.;
Guérineau, N.

Publication type:

Article

Plasma Passivation Etching for HgCdTe.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1741, doi. 10.1007/s11664-009-0833-0

By:

Stoltz, A. J.;
Benson, J. D.;
Smith, P. J.

Publication type:

Article

Planar p-on- n HgCdTe FPAs by Arsenic Ion Implantation.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1805, doi. 10.1007/s11664-009-0829-9

By:

Mollard, L.;
Destefanis, G.;
Baier, N.;
Rothman, J.;
Ballet, P.;
Zanatta, J. P.;
Tchagaspanian, M.;
Papon, A. M.;
Bourgeois, G.;
Barnes, J. P.;
Pautet, C.;
Fougères, P.

Publication type:

Article

Internal Electric Field Investigations of a Cadmium Zinc Telluride Detector Using Synchrotron X-ray Mapping and Pockels Effect Measurements.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1563, doi. 10.1007/s11664-009-0799-y

By:

Yang, G.;
Bolotnikov, A. E.;
Camarda, G. S.;
Cui, Y.;
Hossain, A.;
Yao, H. W.;
James, R. B.

Publication type:

Article

Growth of Thick Epitaxial CdTe Films by Close Space Sublimation.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1548, doi. 10.1007/s11664-009-0808-1

By:

Jiang, Q.;
Brinkman, A. W.;
Cantwell, B. J.;
Mullins, J. T.;
Dierre, Fabrice;
Basu, A.;
Veeramani, P.;
Sellin, P.

Publication type:

Article

Flexibility of p– n Junction Formation from SWIR to LWIR Using MBE-Grown Hg(1– x)Cd xTe on Si Substrates.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1755, doi. 10.1007/s11664-009-0793-4

By:

Vilela, M. F.;
Harris, S. F.;
Kvaas, R. E.;
Buell, A. A.;
Newton, M. D.;
Olsson, K. R.;
Lofgreen, D. D.;
Johnson, S. M.

Publication type:

Article

Magneto-optical Studies of Spin Phenomena in CdMnTe Doped with Co and Cr.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1554, doi. 10.1007/s11664-009-0785-4

By:

Shen, S.;
Liu, X.;
Tivakornsasithorn, K.;
Cho, Y. H.;
Furdyna, J. K.;
Dobrowolska, M.;
Hwang, Y. H.;
Um, Y. H.

Publication type:

Article

Foreword.

Published in:

2009

By:

Sivananthan, S.;
Anter, Y.;
Dhar, N. K.

Publication type:

Editorial

High-Operating-Temperature HgCdTe Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1707, doi. 10.1007/s11664-009-0823-2

By:

Rothman, J.;
Baier, N.;
Ballet, P.;
Mollard, L.;
Fournier, M.;
Gout, J. S.;
Chamonal, J.-P.

Publication type:

Article

Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on- n and Different n-on- p Technologies on LPE HgCdTe.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1733, doi. 10.1007/s11664-009-0795-2

By:

Gravrand, O.;
Mollard, L.;
Largeron, C.;
Baier, N.;
Deborniol, E.;
Chorier, Ph.

Publication type:

Article

Experimental Electron Mobility in ZnO: A Reassessment Through Monte Carlo Simulation.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1677, doi. 10.1007/s11664-009-0809-0

By:

Bertazzi, Francesco;
Bellotti, Enrico;
Furno, Enrico;
Goano, Michele

Publication type:

Article

Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1776, doi. 10.1007/s11664-009-0826-z

By:

Wang, X. J.;
Hou, Y. B.;
Chang, Y.;
Becker, C. R.;
Klie, R. F.;
Sivananthan, S.

Publication type:

Article

Ab Initio Studies of Hydrogen Defects in CdTe.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1539, doi. 10.1007/s11664-009-0751-1

By:

Rak, Z. S.;
Mahanti, S.;
Mandal, Krishna

Publication type:

Article

Influence of Oxygen Post-Growth Annealing on Optical and Electrical Properties of PbSe Thin Films.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1661, doi. 10.1007/s11664-009-0824-1

By:

Zhao, Fanghai;
Ma, Jiangang;
Li, Donghui;
Mukherjee, Shaibal;
Bi, Gang;
Shi, Zhisheng

Publication type:

Article