Works matching IS 03615235 AND DT 2009 AND VI 38 AND IP 7
Results: 110
Thermoelectric Characterization of (Ga,In)<sub>2</sub>Te<sub>3</sub> with Self-Assembled Two-Dimensional Vacancy Planes.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1392, doi. 10.1007/s11664-008-0654-6
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Thermoelectric Properties of Zintl Compound YbZn<sub>2</sub>Sb<sub>2</sub> with Mn Substitution in Anionic Framework.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1068, doi. 10.1007/s11664-009-0667-9
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Thermoelectric Properties of TlCu<sub>3</sub>Te<sub>2</sub> and TlCu<sub>2</sub>Te<sub>2</sub>.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1350, doi. 10.1007/s11664-009-0664-z
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Performance Improvement of Flexible Thermoelectric Device: FEM-Based Simulation.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1371, doi. 10.1007/s11664-009-0657-y
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Wearable Thermoelectric Generators for Body-Powered Devices.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1491, doi. 10.1007/s11664-008-0638-6
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Transport Properties and Cationic Substitutions in Sr<sub>2</sub>IrO<sub>4</sub>.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1331, doi. 10.1007/s11664-008-0642-x
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Thermal Stability and Phase Purity in Polycrystalline Ba<sub>8</sub>Ga<sub> x</sub>Ge<sub>46− x</sub>.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1423, doi. 10.1007/s11664-008-0643-9
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Microstructure and Thermoelectric Properties of n- and p-Type Doped Mg<sub>2</sub>Sn Compounds Prepared by the Modified Bridgman Method.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1056, doi. 10.1007/s11664-008-0630-1
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Thermoelectric Transport in a ZrN/ScN Superlattice.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 960, doi. 10.1007/s11664-008-0639-5
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Thermoelectric Properties of Co<sub>4</sub>Sb<sub>12</sub> Skutterudite Materials with Partial In Filling and Excess In Additions.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1337, doi. 10.1007/s11664-009-0663-0
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Thermoelectric Properties of NdGd<sub>1+ x</sub>S<sub>3</sub> Prepared by CS<sub>2</sub> Sulfurization.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1287, doi. 10.1007/s11664-009-0660-3
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New Physical Model for Thermoelectric Generators.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1214, doi. 10.1007/s11664-009-0665-y
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Doping Effects on the Thermoelectric Properties of AgSbTe<sub>2</sub>.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1504, doi. 10.1007/s11664-009-0669-7
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Effect of Nanoparticles on Electron and Thermoelectric Transport.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 954, doi. 10.1007/s11664-008-0656-4
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Preparation and Thermoelectric Properties of Ag<sub>0.5</sub>In<sub>0.5− x</sub>Pb<sub>5</sub>Sn<sub>4</sub>Te<sub>10</sub>.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1273, doi. 10.1007/s11664-009-0668-8
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Unusual Increase of Electron Thermal Conductivity Caused by a Pseudogap at the Fermi Level.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1354, doi. 10.1007/s11664-009-0662-1
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Synthesis and Thermoelectric Properties of the Double-Filled Skutterudite Yb<sub>0.2</sub>In<sub> y</sub>Co<sub>4</sub>Sb<sub>12</sub>.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 981, doi. 10.1007/s11664-008-0624-z
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Experimental Characterization of Thermoelectric Modules and Comparison with Theoretical Models for Power Generation.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1239, doi. 10.1007/s11664-009-0744-0
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Thermal Shunts in Thermoelectric Energy Scavengers.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1483, doi. 10.1007/s11664-008-0649-3
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Electrodeposition and Thermoelectric Characteristics of Bi<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub> Films for Thermopile Sensor Applications.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1176, doi. 10.1007/s11664-008-0653-7
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Thermoelectric Properties of B-Site Substituted LaRhO<sub>3</sub>.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1013, doi. 10.1007/s11664-009-0666-x
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Thermoelectric Materials with Potential High Power Factors for Electricity Generation.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1268, doi. 10.1007/s11664-008-0628-8
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High Thermoelectric Power Factor Near Room Temperature in Full-Heusler Alloys.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1221, doi. 10.1007/s11664-008-0626-x
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Self-Assembly for Integration of Microscale Thermoelectric Coolers.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1252, doi. 10.1007/s11664-008-0627-9
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Transition-Metal Oxides for Thermoelectric Generation.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1078, doi. 10.1007/s11664-008-0625-y
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Deposition of Bismuth Telluride Thick Film by Solidification under Centrifugal Pressure.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1089, doi. 10.1007/s11664-008-0640-z
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Open-Structured Materials: Skutterudites and Clathrates.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1052, doi. 10.1007/s11664-008-0629-7
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New Ternary Arsenides for High-Temperature Thermoelectric Applications.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1030, doi. 10.1007/s11664-008-0623-0
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Thermoelectric Properties of Heavily Doped n-Type SrTiO<sub>3</sub> Bulk Materials.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1002, doi. 10.1007/s11664-008-0651-9
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Low-Temperature Transport Properties of Sn<sub>24</sub>P<sub>19.3</sub>Br<sub>8</sub> and Sn<sub>17</sub>Zn<sub>7</sub>P<sub>22</sub>Br<sub>8</sub>.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 985, doi. 10.1007/s11664-008-0644-8
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Evaluation of the Thermal Comfort of a Thermoelectric Ceiling Cooling Panel (TE-CCP) System.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1472, doi. 10.1007/s11664-008-0637-7
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Synthesis, Crystal Structure, and Transport Properties of Na<sub>22</sub>Si<sub>136</sub>.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1136, doi. 10.1007/s11664-008-0641-y
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Thermoelectric Properties of n-Type Multiple-Filled Skutterudites.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 930, doi. 10.1007/s11664-008-0650-x
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Soft X-ray Absorption and Photoemission Spectroscopy Study of Cobalt-Based Thermoelectric Oxides: $$\hbox{Ca}_3\hbox{Co}_4\hbox{O}_9$$, $$\hbox{Ca}_3\hbox{Co}_2\hbox{O}_6$$, and $$\hbox{Bi}_{2}\hbox{Sr}_{2}\hbox{Co}_2\hbox{O}_{y}$$
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1127, doi. 10.1007/s11664-008-0631-0
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Thermoelectric Properties of (Pb,Sn,Ge)Te-Based Alloys.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1478, doi. 10.1007/s11664-008-0652-8
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A Natural-Gas-Fired Thermoelectric Power Generation System.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1315, doi. 10.1007/s11664-008-0648-4
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Microstructures and Thermoelectric Properties of an Annealed Ti<sub>0.5</sub>(Hf<sub>0.5</sub>Zr<sub>0.5</sub>)<sub>0.5</sub>NiSn<sub>0.998</sub>Sb<sub>0.002</sub> Ribbon.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1154, doi. 10.1007/s11664-009-0773-8
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Effects of Ball-Milling Atmosphere on the Thermoelectric Properties of TAGS-85 Compounds.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1142, doi. 10.1007/s11664-009-0779-2
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The Effects of Polysilastyrene and Au Additions on the Thermoelectric Properties of β-SiC/Si Composites.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1387, doi. 10.1007/s11664-009-0792-5
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Thermoelectric Properties of Ti<sub> x</sub>(Hf<sub> y</sub>Zr<sub>1− y</sub>)<sub>1− x</sub>NiSn<sub>0.998</sub>Sb<sub>0.002</sub> Half-Heusler Ribbons.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1320, doi. 10.1007/s11664-009-0806-3
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Thermoelectric Properties of Organic Charge-Transfer Compounds.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1171, doi. 10.1007/s11664-009-0791-6
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The Thermoelectric Performance of Poly(3,4-ethylenedi oxythiophene)/Poly(4-styrenesulfonate) Thin Films.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1182, doi. 10.1007/s11664-009-0821-4
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Composites of Higher Manganese Silicides and Nanostructured Secondary Phases and Their Thermoelectric Properties.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1072, doi. 10.1007/s11664-009-0774-7
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Electronic Structure and Thermoelectric Properties of the Delafossite-Type Oxides CuFe<sub>1– x</sub>Ni<sub> x</sub>O<sub>2</sub>.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1282, doi. 10.1007/s11664-009-0775-6
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Thermal Conductivity and Dimensionless Figure of Merit of Thermoelectric Rhodium Oxides Measured by a Modified Harman Method.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 964, doi. 10.1007/s11664-009-0788-1
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Thermoelectric Properties of Bismuth Micro/Nanowire Array Elements Pressured into a Quartz Template Mold.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 944, doi. 10.1007/s11664-009-0781-8
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Microstructure and Thermoelectric Transport Properties of Type I Clathrates Ba<sub>8</sub>Sb<sub>2</sub>Ga<sub>14</sub>Ge<sub>30</sub> Prepared by Ultrarapid Solidification Process.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1278, doi. 10.1007/s11664-009-0805-4
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Microstructure and Thermoelectric Properties of Yb-Filled Skutterudites Prepared by Rapid Solidification.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1224, doi. 10.1007/s11664-009-0776-5
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Multiphysics Simulation of Thermoelectric Systems for Comparison with Experimental Device Performance.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1456, doi. 10.1007/s11664-009-0825-0
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Fabrication and Evaluation of a Thermoelectric Microdevice on a Free-Standing Substrate.
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- Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1326, doi. 10.1007/s11664-009-0819-y
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