Works matching IS 03615235 AND DT 2009 AND VI 38 AND IP 4

Results: 25

Current-Induced Degradation of Nickel Ohmic Contacts to SiC.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 563, doi. 10.1007/s11664-008-0612-3

By:

Downey, B. P.;
Flemish, J. R.;
Liu, B. Z.;
Clark, T. E.;
Mohney, S. E.

Publication type:

Article

Response to the Comments by Tilak and Matocha on the Article by A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater., vol. 37, no. 5, pp. 646–654 (2008)].

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 621, doi. 10.1007/s11664-009-0687-5

By:

Agarwal, A.;
Haney, S.

Publication type:

Article

Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 545, doi. 10.1007/s11664-008-0655-5

By:

Chary, I.;
Chandolu, A.;
Borisov, B.;
Kuryatkov, V.;
Nikishin, S.;
Holtz, M.

Publication type:

Article

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 533, doi. 10.1007/s11664-009-0670-1

By:

Miller, M. A.;
Crawford, M. H.;
Allerman, A. A.;
Cross, K. C.;
Banas, M. A.;
Shul, R. J.;
Stevens, J.;
Bogart, K. H. A.

Publication type:

Article

Heteroepitaxial 3C-SiC on Si with Various Carbonization Process Conditions.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 581, doi. 10.1007/s11664-008-0614-1

By:

Kim, Byeung C.;
Coy, John;
Kim, Sangho;
Capano, Michael

Publication type:

Article

Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 569, doi. 10.1007/s11664-008-0609-y

By:

Virshup, Ariel;
Porter, Lisa;
Lukco, Dorothy;
Buchholt, Kristina;
Hultman, Lars;
Spetz, Anita

Publication type:

Article

Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 484, doi. 10.1007/s11664-008-0569-2

By:

Armstrong, A.;
Wang, G. T.;
Talin, A. A.

Publication type:

Article

Growth and Characterization of GaN Nanowires for Hydrogen Sensors.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 490, doi. 10.1007/s11664-008-0596-z

By:

Johnson, Jason L.;
Yongho Choi;
Ural, Ant;
Lim, Wantae;
Wright, J. S.;
Gila, B. P.;
Ren, F.;
Pearton, S. J.

Publication type:

Article

Effects of TiN Buffer Layer Thickness on GaN Growth.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 511, doi. 10.1007/s11664-008-0597-y

By:

Ito, Kazuhiro;
Uchida, Yu;
Lee, Sangjin;
Tsukimoto, Susumu;
Ikemoto, Yuhei;
Hirata, Koji;
Murakami, Masanori

Publication type:

Article

A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 609, doi. 10.1007/s11664-008-0601-6

By:

Zhen Bi;
Xiaodong Yang;
Jingwen Zhang;
Xuming Bian;
Dong Wang;
Xinan Zhang;
Xun Hou

Publication type:

Article

Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 551, doi. 10.1007/s11664-008-0607-0

By:

Maximenko, S. I.;
Freitas, J. A.;
Garces, N. Y.;
Glaser, E. R.;
Fanton, M. A.

Publication type:

Article

Growth-Temperature-Controlled Optical Properties of Textured Mg xZn1− xO Thin Films.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 613, doi. 10.1007/s11664-008-0613-2

By:

Wei, W.;
Jin, C.;
Narayan, R.J.

Publication type:

Article

Analysis of Oxidized p-GaN Films Directly Grown Using Bias-Assisted Photoelectrochemical Method.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 529, doi. 10.1007/s11664-008-0620-3

By:

Huang, Li-Hsien;
Kan, Kai-Chuan;
Lee, Ching-Ting

Publication type:

Article

Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 586, doi. 10.1007/s11664-008-0618-x

By:

Goris, L.;
Noriega, R.;
Donovan, M.;
Jokisaari, J.;
Kusinski, G.;
Salleo, A.

Publication type:

Article

Surface Wettability of Nanostructured Zinc Oxide Films.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 601, doi. 10.1007/s11664-008-0615-0

By:

Han, Jie;
Gao, Wei

Publication type:

Article

GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 523, doi. 10.1007/s11664-008-0617-y

By:

Tang, K.;
Huang, W.;
Chow, T. Paul

Publication type:

Article

Pre-avalanche Ultraviolet Photoconduction Properties of Transitional-Metal-Doped ZnO Nanowires.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 596, doi. 10.1007/s11664-008-0622-1

By:

Kouklin, N.;
Omari, M.;
Gupta, A.;
Sen, S.

Publication type:

Article

X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 557, doi. 10.1007/s11664-008-0634-x

By:

Chandolu, A.;
Song, D. Y.;
Holtz, M. E.;
Gherasoiu, I.;
Nikishin, S. A.;
Bernussi, A.

Publication type:

Article

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 574, doi. 10.1007/s11664-008-0647-5

By:

Bolen, M. L.;
Capano, M. A.

Publication type:

Article

Foreword.

Published in:

2009

By:

Stahlbush, Robert;
Phillips, Jamie;
Xing, Grace

Publication type:

Editorial

Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/ n-Si).

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 505, doi. 10.1007/s11664-009-0675-9

By:

Kim, Tae-Hong;
Jang, Chan-Oh;
Seong, Han-Kyu;
Choi, Heon-Jin;
Lee, Sang-Kwon

Publication type:

Article

GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 495, doi. 10.1007/s11664-009-0672-z

By:

Mansfield, L. M.;
Bertness, K. A.;
Blanchard, P. T.;
Harvey, T. E.;
Sanders, A. W.;
Sanford, N. A.

Publication type:

Article

Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides by NF3 Annealing.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 538, doi. 10.1007/s11664-009-0681-y

By:

Orita, Kenji;
Kawaguchi, Masao;
Kawaguchi, Yasutoshi;
Takigawa, Shinichi;
Ueda, Daisuke

Publication type:

Article

Comment on A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater. 37, 646 (2008)].

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 618, doi. 10.1007/s11664-009-0661-2

By:

Tilak, V.;
Matocha, K.

Publication type:

Article

Microstructural Investigation of Bilayer Growth of In- and Ga-Rich InGaN Grown by Chemical Vapor Deposition.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 518, doi. 10.1007/s11664-008-0603-4

By:

Jiwon Park;
Sung-Il Baik;
Dong-Su Ko;
Sung-Hyun Park;
Euijoon Yoon;
Young-Woon Kim

Publication type:

Article

Works matching IS 03615235 AND DT 2009 AND VI 38 AND IP 4

Current-Induced Degradation of Nickel Ohmic Contacts to SiC.

Response to the Comments by Tilak and Matocha on the Article by A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater., vol. 37, no. 5, pp. 646–654 (2008)].

Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN.

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes.

Heteroepitaxial 3C-SiC on Si with Various Carbonization Process Conditions.

Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors.

Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires.

Growth and Characterization of GaN Nanowires for Hydrogen Sensors.

Effects of TiN Buffer Layer Thickness on GaN Growth.

A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film.

Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing.

Growth-Temperature-Controlled Optical Properties of Textured Mg<sub> x</sub>Zn<sub>1− x</sub>O Thin Films.

Analysis of Oxidized p-GaN Films Directly Grown Using Bias-Assisted Photoelectrochemical Method.

Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis.

Surface Wettability of Nanostructured Zinc Oxide Films.

GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces.

Pre-avalanche Ultraviolet Photoconduction Properties of Transitional-Metal-Doped ZnO Nanowires.

X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration.

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes.

Foreword.

Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/ n-Si).

GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements.

Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides by NF<sub>3</sub> Annealing.

Comment on A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater. 37, 646 (2008)].

Microstructural Investigation of Bilayer Growth of In- and Ga-Rich InGaN Grown by Chemical Vapor Deposition.