Works matching IS 03615235 AND DT 2009 AND VI 38 AND IP 4
Results: 25
Current-Induced Degradation of Nickel Ohmic Contacts to SiC.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 563, doi. 10.1007/s11664-008-0612-3
- By:
- Publication type:
- Article
Response to the Comments by Tilak and Matocha on the Article by A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater., vol. 37, no. 5, pp. 646–654 (2008)].
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 621, doi. 10.1007/s11664-009-0687-5
- By:
- Publication type:
- Article
Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts to p-GaN.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 545, doi. 10.1007/s11664-008-0655-5
- By:
- Publication type:
- Article
A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 609, doi. 10.1007/s11664-008-0601-6
- By:
- Publication type:
- Article
Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 533, doi. 10.1007/s11664-009-0670-1
- By:
- Publication type:
- Article
Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 551, doi. 10.1007/s11664-008-0607-0
- By:
- Publication type:
- Article
Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 484, doi. 10.1007/s11664-008-0569-2
- By:
- Publication type:
- Article
Growth and Characterization of GaN Nanowires for Hydrogen Sensors.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 490, doi. 10.1007/s11664-008-0596-z
- By:
- Publication type:
- Article
Effects of TiN Buffer Layer Thickness on GaN Growth.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 511, doi. 10.1007/s11664-008-0597-y
- By:
- Publication type:
- Article
Heteroepitaxial 3C-SiC on Si with Various Carbonization Process Conditions.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 581, doi. 10.1007/s11664-008-0614-1
- By:
- Publication type:
- Article
Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 569, doi. 10.1007/s11664-008-0609-y
- By:
- Publication type:
- Article
Growth-Temperature-Controlled Optical Properties of Textured Mg<sub> x</sub>Zn<sub>1− x</sub>O Thin Films.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 613, doi. 10.1007/s11664-008-0613-2
- By:
- Publication type:
- Article
Analysis of Oxidized p-GaN Films Directly Grown Using Bias-Assisted Photoelectrochemical Method.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 529, doi. 10.1007/s11664-008-0620-3
- By:
- Publication type:
- Article
Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 586, doi. 10.1007/s11664-008-0618-x
- By:
- Publication type:
- Article
Foreword.
- Published in:
- 2009
- By:
- Publication type:
- Editorial
Surface Wettability of Nanostructured Zinc Oxide Films.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 601, doi. 10.1007/s11664-008-0615-0
- By:
- Publication type:
- Article
Pre-avalanche Ultraviolet Photoconduction Properties of Transitional-Metal-Doped ZnO Nanowires.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 596, doi. 10.1007/s11664-008-0622-1
- By:
- Publication type:
- Article
X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 557, doi. 10.1007/s11664-008-0634-x
- By:
- Publication type:
- Article
Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 574, doi. 10.1007/s11664-008-0647-5
- By:
- Publication type:
- Article
Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/ n-Si).
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 505, doi. 10.1007/s11664-009-0675-9
- By:
- Publication type:
- Article
GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 523, doi. 10.1007/s11664-008-0617-y
- By:
- Publication type:
- Article
GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 495, doi. 10.1007/s11664-009-0672-z
- By:
- Publication type:
- Article
Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides by NF<sub>3</sub> Annealing.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 538, doi. 10.1007/s11664-009-0681-y
- By:
- Publication type:
- Article
Comment on A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater. 37, 646 (2008)].
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 618, doi. 10.1007/s11664-009-0661-2
- By:
- Publication type:
- Article
Microstructural Investigation of Bilayer Growth of In- and Ga-Rich InGaN Grown by Chemical Vapor Deposition.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 518, doi. 10.1007/s11664-008-0603-4
- By:
- Publication type:
- Article