Works matching IS 03615235 AND DT 2009 AND VI 38 AND IP 11
Results: 27
Hygrothermal Effects on the Tensile Properties of Anisotropic Conductive Films.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2415, doi. 10.1007/s11664-009-0893-1
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Interfacial Reactions and Microstructures of Sn-0.7Cu- xZn Solders with Ni-P UBM During Thermal Aging.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2242, doi. 10.1007/s11664-009-0867-3
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Desmearing of FR4 Epoxy Resin Using NMP-Based Sweller.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2368, doi. 10.1007/s11664-009-0891-3
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The Ni-rich Part of the Ni-P-Sn System: Isothermal Sections.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2275, doi. 10.1007/s11664-009-0854-8
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Wetting Properties and Interfacial Reactions of Mechanically Alloyed Cu<sub>5</sub>Zn<sub>8</sub>-Bearing Pb-Free Solders on a Copper Substrate.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2301, doi. 10.1007/s11664-009-0860-x
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Interfacial Reactions of Sn-9Zn- xCu ( x = 1, 4, 7, 10) Solders with Ni Substrates.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2222, doi. 10.1007/s11664-009-0880-6
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Fifteen-Nanometer Ru Diffusion Barrier on NiSi/Si for a sub-45 nm Cu Contact Plug.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2251, doi. 10.1007/s11664-009-0899-8
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Performance Comparison of Top- and Bottom-emitting Long Wave Infrared Light Emitting Diode Devices.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2329, doi. 10.1007/s11664-009-0905-1
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Impact of Reaction Shrinkage on Stress in Semiconductor Packages.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2362, doi. 10.1007/s11664-009-0886-0
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Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2323, doi. 10.1007/s11664-009-0897-x
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Fundamental Study of the Intermixing of 95Pb-5Sn High-Lead Solder Bumps and 37Pb-63Sn Pre-Solder on Chip-Carrier Substrates.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2234, doi. 10.1007/s11664-009-0866-4
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Wetting Behavior and Mechanical Properties of Sn-Zn and Sn-Pb Solder Alloys.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2405, doi. 10.1007/s11664-009-0888-y
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- Article
Enhancement in Conductivity and Transmittance of Zinc Oxide Prepared by Chemical Bath Deposition.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2264, doi. 10.1007/s11664-009-0900-6
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Dewetting Retardation on Ag/Cu Coated Light Emitting Diode Lead Frames During the Solder Immersion Process.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2270, doi. 10.1007/s11664-009-0903-3
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Copper-Silver Alloy for Advanced Barrierless Metallization.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2212, doi. 10.1007/s11664-009-0904-2
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Analysis of Dislocation Density in Pb<sub>(1− x)</sub>Sn<sub> x</sub>Se Grown on ZnTe/Si by MBE.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2343, doi. 10.1007/s11664-009-0907-z
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N Doping and Al-N Co-doping in Sol–Gel ZnO Films: Studies of Their Structural, Electrical, Optical, and Photoconductive Properties.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2335, doi. 10.1007/s11664-009-0908-y
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- Article
Effect of Electromigration on Interfacial Reactions in 90Sn-10Sb Pb-Free Solder Joints.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2398, doi. 10.1007/s11664-009-0917-x
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Temperature Effect on Intermetallic Compound Growth Kinetics of Cu Pillar/Sn Bumps.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2228, doi. 10.1007/s11664-009-0922-0
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Cross-Interaction Between Au/Sn and Cu/Sn Interfacial Reactions.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2257, doi. 10.1007/s11664-009-0920-2
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Tin Whisker Growth on the Surface of Sn-0.7Cu Lead-Free Solder with a Rare Earth (Nd) Addition.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2353, doi. 10.1007/s11664-009-0926-9
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Foreword.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2211, doi. 10.1007/s11664-009-0935-8
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In Situ Measurements of Thermal and Electrical Effects of Strain in Flip-Chip Silicon Dies Using Synchrotron Radiation X-rays.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2308, doi. 10.1007/s11664-009-0934-9
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Ohmic Contact to High-Aluminum-Content AlGaN Epilayers.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2348, doi. 10.1007/s11664-009-0924-y
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- Article
Primary Creep in Sn-3.8Ag-0.7Cu Solder, Part II: Constitutive Creep Model Development and Finite Element Analysis.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2388, doi. 10.1007/s11664-009-0906-0
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Primary Creep in Sn3.8Ag0.7Cu Solder. Part I: Theory, Experiments, and Data Reduction.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2376, doi. 10.1007/s11664-009-0901-5
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Investigation of the Interfaces in Ni-FUSI/Hf-Based/Si and Ni-FUSI/SiO<sub>2</sub>/Si Stacks by Physical and Electrical Characterization Techniques.
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- Journal of Electronic Materials, 2009, v. 38, n. 11, p. 2314, doi. 10.1007/s11664-009-0955-4
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