Works matching IS 03615235 AND DT 2008 AND VI 37 AND IP 9

Results: 52

Erratum.

Published in:: 2008
Publication type:: Correction Notice

Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1480, doi. 10.1007/s11664-008-0519-z

By:

JACOBS, R. N.;
ALMEIDA, L. A.;
MARKUNAS, J.;
PELLEGRINO, J.;
GROENERT, M.;
JAIME-VASQUEZ, M.;
MAHADIK, N.;
ANDREWS, C.;
QADRI, S. B.;
LEE, T.;
KIM, M.

Publication type:

Article

Avalanche Mechanism in p+-n--n+ and p+ -n Mid-Wavelength Infrared Hg1-xCdxTe Diodes on Si Substrates.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1488, doi. 10.1007/s11664-008-0518-0

By:

MALLICK, SHUBHRANGSHU;
BANERJEE, KOUSHIK;
VELICU, SILVIU;
GREIN, CHRISTOPH;
GHOSH, SIDDHARTHA;
ZHAO, JUN

Publication type:

Article

Foreword.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1165, doi. 10.1007/s11664-008-0505-5

By:

Sivananthan, S.;
Anter, Y.;
Dhar, N. K.

Publication type:

Article

Effect of Atmosphere on n-Type Hg1-xCdxTe Surface after Different Wet Etching Treatments: An Electrical and Structural Study.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1471, doi. 10.1007/s11664-008-0494-4

By:

KIRAN, R.;
SPORKEN, R.;
CASSELMAN, T. N.;
EMELIE, P. Y.;
KODAMA, R.;
CHANG, Y.;
AQARIDEN, F.;
VELICU, S.;
ZHAO, J.;
SIVANANTHAN, S.

Publication type:

Article

Structural Analysis of CdTe Hetero-epitaxy on (211) Si.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1231, doi. 10.1007/s11664-008-0469-5

By:

BENSON, J. D.;
JACOBS, R. N.;
MARKUNAS, J. K.;
JAIME-VASQUEZ, M.;
SMITH, P. J.;
ALMEIDA, L. A.;
MARTINKA, M.;
VILELA, M. F.;
LEE, U.

Publication type:

Article

Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1212, doi. 10.1007/s11664-008-0479-3

By:

BELAS, E.;
BUGÁR, M.;
GRILL, R.;
FRANC, J.;
MORAVEC, P.;
HLÍDEK, P.;
HÖSCHL, P.

Publication type:

Article

Electromagnetic Modeling of n-on-p HgCdTe Back-Illuminated Infrared Photodiode Response.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1205, doi. 10.1007/s11664-008-0478-4

By:

GRAVRAND, O.;
GIDON, S.

Publication type:

Article

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1171, doi. 10.1007/s11664-008-0477-5

By:

YONG CHANG;
BECKER, C. R.;
GREIN, C. H.;
ZHAO, J.;
FULK, C.;
CASSELMAN, T.;
KIRAN, R.;
WANG, X. J.;
ROBINSON, E.;
AN, S. Y.;
MALLICK, S.;
SIVANANTHAN, S.;
AOKI, T.;
WANG, C. Z.;
SMITH, D. J.;
VELICU, S.;
CROCCO, J.;
CHEN, Y.;
BRILL, G.;
WIJEWARNASURIYA, P. S.

Publication type:

Article

Thermoelectric Effect Spectroscopy and Photoluminescence of High-Resistivity CdTe:In.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1219, doi. 10.1007/s11664-008-0471-y

By:

ELHADIDY, HASSAN;
FRANC, JAN;
BELAS, EDUARD;
HLÍDEK, PAVEL;
MORAVEC, PAVEL;
GRILL, ROMAN;
HOSCHL, PAVEL

Publication type:

Article

Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1200, doi. 10.1007/s11664-008-0480-x

By:

WANG, X. J.;
FULK, C.;
ZHAO, F. H.;
LI, D. H.;
MUKHERJEE, S.;
CHANG, Y.;
SPORKEN, R.;
KLIE, R.;
SHI, Z.;
GREIN, C. H.;
SIVANANTHAN, S.

Publication type:

Article

Modeling of the Structural Properties of Hg1-xCdxTe.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1166, doi. 10.1007/s11664-008-0468-6

By:

BENSON, J. D.;
MARTINKA, M.

Publication type:

Article

Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1255, doi. 10.1007/s11664-008-0456-x

By:

BOMMENA, R.;
SELDRUM, T.;
SAMAIN, L.;
SPORKEN, R.;
SIVANANTHAN, S.;
BRUECK, S. R. J.

Publication type:

Article

Traces of HgCdTe Defects as Revealed by Etch Pits.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1241, doi. 10.1007/s11664-008-0465-9

By:

YANG, J. R.;
CAO, X. L.;
WEI, Y. F.;
HE, L.

Publication type:

Article

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1247, doi. 10.1007/s11664-008-0460-1

By:

JAIME-VASQUEZ, M.;
MARTINKA, M.;
STOLTZ, A. J.;
JACOBS, R. N.;
BENSON, J. D.;
ALMEIDA, L. A.;
MARKUNAS, J. K.

Publication type:

Article

Impulse Response Time Measurements in Hg0.7Cd0.3Te MWIR Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1261, doi. 10.1007/s11664-008-0459-7

By:

PERRAIS, GWLADYS;
ROTHMAN, JOHAN;
DESTEFANIS, GERARD;
CHAMONAL, JEAN-PAUL

Publication type:

Article

ZnO TFT Devices Built on Glass Substrates.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1237, doi. 10.1007/s11664-008-0457-9

By:

ZHU, J.;
CHEN, H.;
SARAF, G.;
DUAN, Z.;
LU, Y.;
HSU, S. T.

Publication type:

Article

Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1225, doi. 10.1007/s11664-008-0467-7

By:

STOLTZ, A. J.;
BENSON, J. D.;
SMITH, P. J.

Publication type:

Article

Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1283, doi. 10.1007/s11664-008-0455-y

By:

WIJEWARNASURIYA, PRIYALAL S.;
EMELIE, P. Y.;
D'SOUZA, ARVIND;
BRILL, GREGORY;
STAPELBROEK, MARYN G.;
VELICU, SILVIU;
YUANPING CHEN;
GREIN, CHRIS;
SIVANANTHAN, SIVALINGAM;
DHAR, NIBIR K.

Publication type:

Article

As Doping in (Hg,Cd)Te: An Alternative Point of View.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1291, doi. 10.1007/s11664-008-0452-1

By:

HAILS, JANET E.;
IRVINE, STUART J. C.;
COLE-HAMILTON, DAVID J.;
GIESS, JEAN;
HOULTON, MICHAEL R.;
GRAHAM, ANDREW

Publication type:

Article

Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1303, doi. 10.1007/s11664-008-0449-9

By:

ROTHMAN, JOHAN;
PERRAIS, GWLADYS;
BALLET, PHILIPPE;
MOLLARD, L.;
GOUT, S.;
CHAMONAL, J.-P.

Publication type:

Article

Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1438, doi. 10.1007/s11664-008-0448-x

By:

HAWKINS, SAMANTHA A.;
VILLA-ALEMAN, ELIEL;
DUFF, MARTINE C.;
HUNTER, DOUG B.;
BURGER, ARNOLD;
GROZA, MICHAEL;
BULIGA, VLADIMIR;
BLACK, DAVID R.

Publication type:

Article

Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1444, doi. 10.1007/s11664-008-0447-y

By:

SELVIG, E.;
TONHEIM, C. R.;
LORENTZEN, T.;
KONGSHAUG, K. O.;
SKAULI, T.;
HAAKENAASEN, R.

Publication type:

Article

LWIR HgCdTe Detectors Grown on Ge Substrates.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1465, doi. 10.1007/s11664-008-0443-2

By:

VILELA, M. F.;
LOFGREEN, D. D.;
SMITH, E. P. G.;
NEWTON, M. D.;
VENZOR, G. M.;
PETERSON, J. M.;
FRANKLIN, J. J.;
REDDY, M.;
THAI, Y.;
PATTEN, E. A.;
JOHNSON, S. M.;
TIDROW, M. Z.

Publication type:

Article

Vapor-Phase Growth of Bulk Crystals of Cadmium Telluride and Cadmium Zinc Telluride on Gallium Arsenide Seeds.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1460, doi. 10.1007/s11664-008-0442-3

By:

MULLINS, J. T.;
CANTWELL, B. J.;
BASU, A.;
JIANG, Q.;
CHOUBEY, A.;
BRINKMAN, A. W.;
TANNER, B. K.

Publication type:

Article

MBE HgCdTe on Alternative Substrates for FPA Applications.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1189, doi. 10.1007/s11664-008-0441-4

By:

LI HE;
XIANGLIANG FU;
QINGZHU WEI;
WEIQIANG WANG;
LU CHEN;
YAN WU;
XIAONING HU;
JIANRONG YANG;
QINYAO ZHANG;
RUIJUN DING;
XIAOSHUANG CHEN;
WEI LU

Publication type:

Article

Junction Stability in Ion-Implanted Mercury Cadmium Telluride.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1329, doi. 10.1007/s11664-008-0440-5

By:

CHANDRA, D.;
SCHAAKE, H. F.;
KINCH, M. A.

Publication type:

Article

A Theoretical Model for the HgCdTe Electron Avalanche Photodiode.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1453, doi. 10.1007/s11664-008-0439-y

By:

KINCH, MICHAEL A.

Publication type:

Article

Numerical Analysis of a Very Long-Wavelength HgCdTe Pixel Array for Infrared Detection.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1349, doi. 10.1007/s11664-008-0438-z

By:

D'ORSOGNA, DANILO;
TOBIN, STEPHEN P.;
BELLOTTI, ENRICO

Publication type:

Article

Nanotrenches Induced by Catalyst Particles on ZnSe Surfaces.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1344, doi. 10.1007/s11664-008-0437-0

By:

CHAN, S. K.;
LOK, S. K.;
WANG, G.;
CAI, Y.;
WANG, N.;
SOU, I. K.

Publication type:

Article

Al- and Al:In-Doped ZnO Thin Films Deposited by RF Magnetron Sputtering for Spacecraft Charge Mitigation.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1324, doi. 10.1007/s11664-008-0436-1

By:

LENNON, C.;
KODAMA, R.;
CHANG, Y.;
SIVANANTHAN, S.;
DESHPANDE, M.

Publication type:

Article

Status of LWIR HgCdTe-on-Silicon FPA Technology.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1184, doi. 10.1007/s11664-008-0434-3

By:

CARMODY, M.;
PASKO, J. G.;
EDWALL, D.;
PIQUETTE, E.;
KANGAS, M.;
FREEMAN, S.;
ARIAS, J.;
JACOBS, R.;
MASON, W.;
STOLTZ, A.;
CHEN, Y.;
DHAR, N. K.

Publication type:

Article

Gated IR Imaging with 128 x 128 HgCdTe Electron Avalanche Photodiode FPA.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1334, doi. 10.1007/s11664-008-0433-4

By:

BECK, JEFF;
WOODALL, MILTON;
SCRITCHFIELD, RICHARD;
OHLSON, MARTHA;
WOOD, LEWIS;
MITRA, PRADIP;
ROBINSON, JIM

Publication type:

Article

Noise Attributes of LWIR HDVIP HgCdTe Detectors.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1318, doi. 10.1007/s11664-008-0432-5

By:

D'SOUZA, A. I.;
STAPELBROEK, M. G.;
ROBINSON, E. W.;
YONEYAMA, C.;
MILLS, H. A.;
KINCH, M. A.;
SKOKAN, M. R.;
SHIH, H. D.

Publication type:

Article

Effects of Surface Processing on the Response of CZT Gamma Detectors: Studies with a Collimated Synchrotron X-Ray Beam.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1356, doi. 10.1007/s11664-008-0431-6

By:

HOSSAIN, A.;
BOLOTNIKOV, A. E.;
CAMARDA, G. S.;
CUI, Y.;
BABALOLA, S.;
BURGER, A.;
JAMES, R. B.

Publication type:

Article

Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1391, doi. 10.1007/s11664-008-0430-7

By:

YOKOTA, M.;
YASUDA, K.;
NIRAULA, M.;
NAKAMURA, K.;
OHASHI, H.;
TANAKA, R.;
OMURA, M.;
MINOURA, S.;
SHINGU, I.;
AGATA, Y.

Publication type:

Article

Epitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1497, doi. 10.1007/s11664-008-0429-0

By:

ZOGG, H.;
ARNOLD, M.;
FELDER, F.;
RAHIM, M.;
EBNETER, C.;
ZASAVITSKIY, I.;
QUACK, N.;
BLUNIER, S.;
DUAL, J.

Publication type:

Article

MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1274, doi. 10.1007/s11664-008-0428-1

By:

REDDY, M.;
PETERSON, J. M.;
LOFGREEN, D. D.;
FRANKLIN, J. A.;
VANG, T.;
SMITH, E. P. G.;
WEHNER, J. G. A.;
KASAI, I.;
BANGS, J. W.;
JOHNSON, S. M.

Publication type:

Article

Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1362, doi. 10.1007/s11664-008-0427-2

By:

EMELIE, P. Y.;
VELICU, S.;
GREIN, C. H.;
PHILLIPS, J. D.;
WIJEWARNASURIYA, P. S.;
DHAR, N. K.

Publication type:

Article

MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by "Rule 07", a Very Convenient Heuristic.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1406, doi. 10.1007/s11664-008-0426-3

By:

TENNANT, W. E.;
LEE, DONALD;
ZANDIAN, MAJID;
PIQUETTE, ERIC;
CARMODY, MICHAEL

Publication type:

Article

Modeling of Copper SIMS Profiles in Thin HgCdTe.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1387, doi. 10.1007/s11664-008-0425-4

By:

SCHAAKE, H. F.;
KINCH, M. A.;
AQARIDEN, F.

Publication type:

Article

Anisotropic Surface Roughness in Molecular-Beam Epitaxy CdTe (211)B/Ge(211).

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1369, doi. 10.1007/s11664-008-0424-5

By:

BADANO, GIACOMO;
BAUDRY, XAVIER;
BALLET, PHILIPPE;
DUVAUT, PHILIPPE;
MILLION, ALAIN;
MICOUD, ERIC;
KAISMOUNE, SABEUR;
FOUGÈRES, PAUL;
MIBORD, SOPHIE;
TRAN-VAN, PIERRE;
ETCHEBERRY, ARNAUD

Publication type:

Article

High-Operating-Temperature MWIR Detector Diodes.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1401, doi. 10.1007/s11664-008-0423-6

By:

SCHAAKE, H. F.;
KINCH, M. A.;
CHANDRA, D.;
AQARIDEN, F.;
LIAO, P. K.;
WEIRAUCH, D. F.;
WAN, C.-F.;
SCRITCHFIELD, R. E.;
SULLIVAN, W. W.;
TEHERANI, J. T.;
SHIH, H. D.

Publication type:

Article

Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared Astronomy.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1396, doi. 10.1007/s11664-008-0421-8

By:

PIQUETTE, E. C.;
EDWALL, D. D.;
ARNOLD, H.;
CHEN, A.;
AUYEUNG, J.

Publication type:

Article

Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1376, doi. 10.1007/s11664-008-0420-9

By:

REINE, M. B.;
MARCINIEC, J. W.;
WONG, K. K.;
PARODOS, T.;
MULLARKEY, J. D.;
LAMARRE, P. A.;
TOBIN, S. P.;
MINICH, R. W.;
GUSTAVSEN, K. A.;
COMPTON, M.;
WILLIAMS, G. M.

Publication type:

Article

An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1420, doi. 10.1007/s11664-008-0419-2

By:

DE LYON, T. J.;
RAJAVEL, R. D.;
HUNTER, A. T.;
JENSEN, J. E.;
JACK, M. D.;
BAILEY, S. L.;
KVAAS, R. E.;
RANDALL, V. K.;
JOHNSON, S. M.

Publication type:

Article

Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1411, doi. 10.1007/s11664-008-0418-3

By:

ELIZONDO, S. L.;
ZHAO, F.;
KAR, J.;
MA, J.;
SMART, J.;
LI, D.;
MUKHERJEE, S.;
SHI, Z.

Publication type:

Article

Modeling of Recombination in HgCdTe.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1415, doi. 10.1007/s11664-008-0417-4

By:

GREIN, C. H.;
FLATTÉ, M. E.;
YONG CHANG

Publication type:

Article

ZnO and Related Materials for Sensors and Light-Emitting Diodes.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1426, doi. 10.1007/s11664-008-0416-5

By:

PEARTON, S. J.;
LIM, W. T.;
WRIGHT, J. S.;
TIEN, L. C.;
KIM, H. S.;
NORTON, D. P.;
WANG, H. T.;
KANG, B. S.;
REN, F.;
JUN, J.;
LIN, J.;
OSINSKY, A.

Publication type:

Article

Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1504, doi. 10.1007/s11664-008-0415-6

By:

VELICU, S.;
GREIN, C. H.;
ZHAO, J.;
CHANG, Y.;
AN, S.-Y.;
YADAV, A.;
PIPE, K.;
CLARK, W.

Publication type:

Article