Works matching IS 03615235 AND DT 2008 AND VI 37 AND IP 5

Results: 41

Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 730, doi. 10.1007/s11664-008-0406-7

By:

Liu, Kendrick X.;
Stahlbush, Robert E.;
Kok-Keong Lew;
Myers-Ward, Rachael L.;
Vanmil, Brenda L.;
Gaskill, Kurt D.;
Eddy, Charles R.

Publication type:

Article

Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 641, doi. 10.1007/s11664-008-0392-9

By:

Zhu, M.;
Xia, Y.;
Zhao, W.;
Li, Y.;
Senawiratne, J.;
Detchprohm, T.;
Wetzel, C.

Publication type:

Article

Formation of Low-Resistance Ohmic Contact by Damage-Proof Selective-Area Growth of Single-Crystal n+-GaN Using Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 635, doi. 10.1007/s11664-008-0390-y

By:

Hui-Chan Seo;
Seung Jae Hong;
Chapman, Patrick;
Kyekyoon (Kevin) Kim

Publication type:

Article

Foreword.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 545, doi. 10.1007/s11664-008-0388-5

By:

Phillips, Jamie;
Stahlbush, Robert;
Xing, Grace

Publication type:

Article

Crystalline SiNx Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 628, doi. 10.1007/s11664-008-0386-7

By:

Takizawa, Toshiyuki;
Nakazawa, Satoshi;
Ueda, Tetsuzo

Publication type:

Article

Optical Hall Effect in Hexagonal InN.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 611, doi. 10.1007/s11664-008-0385-8

By:

Hofmann, T.;
Darakchieva, V.;
Monemar, B.;
Lu, H.;
Schaff, W. J.;
Schubert, M.

Publication type:

Article

Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 624, doi. 10.1007/s11664-008-0384-9

By:

Chung-Yu Lu;
Yi Chang, Edward;
Jui-Chien Huang;
Chia-Ta Chang;
Mei-Hsuan Lin;
Ching-Tung Lee

Publication type:

Article

Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 616, doi. 10.1007/s11664-008-0382-y

By:

Pietzka, C.;
Denisenko, A.;
Alomari, M.;
Medjdoub, F.;
Carlin, J.-F.;
Feltin, E.;
Grandjean, N.;
Kohn, E.

Publication type:

Article

Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 603, doi. 10.1007/s11664-007-0373-4

By:

Akagi, T.;
Kosaka, K.;
Harui, S.;
Muto, D.;
Naoi, H.;
Araki, T.;
Nanishi, Y.

Publication type:

Article

Silicon Carbide Terahertz Emitting Devices.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 726, doi. 10.1007/s11664-007-0371-6

By:

Xuan, G.;
Lv, P.-C.;
Zhang, X.;
Kolodzey, J.;
Desalvo, G.;
Powell, A.

Publication type:

Article

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 607, doi. 10.1007/s11664-007-0370-7

By:

Senawiratne, J.;
Li, Y.;
Zhu, M.;
Xia, Y.;
Zhao, W.;
Detchprohm, T.;
Chatterjee, A.;
Plawsky, J. L.;
Wetzel, C.

Publication type:

Article

Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 770, doi. 10.1007/s11664-007-0365-4

By:

Ajimsha, R. S.;
Jayaraj, M. K.;
Kukreja, L. M.

Publication type:

Article

Cathodoluminescence Study on Spatial Luminescence Properties of InN/GaN Multiple Quantum Wells Consisting of 1-Monolayer-Thick InN Wells/GaN Matrix.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 597, doi. 10.1007/s11664-007-0363-6

By:

Hwang, E. S.;
Che, S. B.;
Saito, H.;
Wang, X.;
Ishitani, Y.;
Yoshikawa, A.

Publication type:

Article

ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 755, doi. 10.1007/s11664-007-0362-7

By:

Jie Sun;
Mourey, Devin A.;
Dalong Zhao;
Jackson, Thomas N.

Publication type:

Article

Annealing Studies on Zinc Oxide Thin Films Deposited by Magnetron Sputtering.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 764, doi. 10.1007/s11664-007-0357-4

By:

Tingfang Yen;
Strome, Dave;
Sung Jin Kim;
Cartwright, Alexander N.;
Anderson, Wayne A.

Publication type:

Article

Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 558, doi. 10.1007/s11664-007-0355-6

By:

Liu, J. P.;
Limb, J. B.;
Ryou, J.-H.;
Lee, W.;
Yoo, D.;
Horne, C. A.;
Dupuis, R. D.

Publication type:

Article

Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 585, doi. 10.1007/s11664-007-0353-8

By:

Cai, Z.;
Garzon, S.;
Chandrashekhar, M. V. S.;
Webb, R. A.;
Koley, G.

Publication type:

Article

Growth of Polarity-Controlled ZnO Films on (0001) Al2O3.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 736, doi. 10.1007/s11664-007-0350-y

By:

Park, J. S.;
Chang, J. H.;
Minegishi, T.;
Lee, H. J.;
Park, S. H.;
Im, I. H.;
Hanada, T.;
Hong, S. K.;
Cho, M. W.;
Yao, T.

Publication type:

Article

Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 721, doi. 10.1007/s11664-007-0347-6

By:

Jikuan Cheng;
Jiqiang Gao;
Junlin Liu;
Jianfeng Yang;
Xian Jiang;
Rui Guo

Publication type:

Article

Effect of MBE Growth Conditions on Multiple Electron Transport in InN.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 593, doi. 10.1007/s11664-007-0345-8

By:

Fehlberg, Tamara B.;
Gallinat, Chad S.;
Umana-Membreno, Gilberto A.;
Koblmüller, Gregor;
Nener, Brett D.;
Speck, James S.;
Parish, Giacinta

Publication type:

Article

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 554, doi. 10.1007/s11664-007-0336-9

By:

Kocan, M.;
Umana-Membreno, G. A.;
Kilburn, M. R.;
Fletcher, I. R.;
Recht, F.;
McCarthy, L.;
Mishra, U. K.;
Nener, B. D.;
Parish, G.

Publication type:

Article

Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 546, doi. 10.1007/s11664-007-0332-0

By:

Chen, Z.;
Fichtenbaum, N.;
Brown, D.;
Keller, S.;
Mishra, U. K.;
Denbaars, S. P.;
Nakamura, S.

Publication type:

Article

1200 V 4H-SiC Bipolar Junction Transistors with A Record ß of 70.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 662, doi. 10.1007/s11664-007-0331-1

By:

Jonas, Charlotte;
Capell, Craig;
Burk, Al;
Qingchun Zhang;
Callanan, Robert;
Agarwal, Anant;
Geil, Bruce;
Scozzie, Charles

Publication type:

Article

A High-Performance Ultraviolet Photoconductive Detector Based on a ZnO Film Grown by RF Sputtering.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 760, doi. 10.1007/s11664-007-0329-8

By:

Zhen Bi;
Jingwen Zhang;
Xuming Bian;
Dong Wang;
Xin'an Zhang;
Weifeng Zhang;
Xun Hou

Publication type:

Article

Investigation of Electron--Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 706, doi. 10.1007/s11664-007-0328-9

By:

Yi Chen;
Ning Zhang;
Dudley, Michael;
Caldwell, Joshua D.;
Liu, Kendrick X.;
Stahlbush, Robert E.;
Xianrong Huang;
Macrander, Albert T.;
Black, David R.

Publication type:

Article

Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 655, doi. 10.1007/s11664-007-0327-x

By:

Picard, Y. N.;
Liu, K. X.;
Stahlbush, R. E.;
Twigg, M. E.

Publication type:

Article

Growth of GaN Films on Si (100) Buffered with ZnO by Ion-Beam-Assisted Filtered Cathodic Vacuum Arc Technique.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 573, doi. 10.1007/s11664-007-0322-2

By:

Xiao Hong Ji;
Ji Wei Zhai

Publication type:

Article

Some Critical Materials and Processing Issues in SiC Power Devices.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 646, doi. 10.1007/s11664-007-0321-3

By:

Agarwal, Anant;
Haney, Sarah

Publication type:

Article

Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 578, doi. 10.1007/s11664-007-0320-4

By:

Yuh-Renn Wu;
Hinckley, John M.;
Singh, Jasprit

Publication type:

Article

Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 713, doi. 10.1007/s11664-007-0314-2

By:

Yi Chen;
Dudley, Michael;
Sanchez, Edward K.;
Macmillan, Michael F.

Publication type:

Article

Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 569, doi. 10.1007/s11664-007-0313-3

By:

Umana-Membreno, G. A.;
Parish, G.;
Fichtenbaum, N.;
Keller, S.;
Mishra, U. K.;
Nener, B. D.

Publication type:

Article

Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 699, doi. 10.1007/s11664-007-0311-5

By:

Caldwell, Joshua D.;
Glembocki, Orest J.;
Stahlbush, Robert E.;
Hobart, Karl D.

Publication type:

Article

The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 666, doi. 10.1007/s11664-007-0310-6

By:

Haney, Sarah;
Agarwal, Anant

Publication type:

Article

Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 691, doi. 10.1007/s11664-007-0308-0

By:

Picard, Yoosuf N.;
Twigg, Mark E.;
Caldwell, Joshua D.;
Eddy Jr., Charles R.;
Neudeck, Philip G.;
Trunek, Andrew J.;
Powell, J. Anthony

Publication type:

Article

Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 685, doi. 10.1007/s11664-007-0306-2

By:

Vanmil, B. L.;
Lew, K. K.;
Myers-Ward, R. L.;
Eddy Jr., C. R.;
Gaskill, D. K.

Publication type:

Article

Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 564, doi. 10.1007/s11664-007-0300-8

By:

Miller, M. A.;
Koo, B. H.;
Bogart, K. H. A.;
Mohney, S. E.

Publication type:

Article

Quantum Confinement and Carrier Localization Effects in ZnO/MgxZn1-xO Wells Synthesized by Pulsed Laser Deposition.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 749, doi. 10.1007/s11664-007-0299-x

By:

Bowen, W. E.;
Wang, W.;
Cagin, E.;
Phillips, J. D.

Publication type:

Article

Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 550, doi. 10.1007/s11664-007-0298-y

By:

Kang, B. S.;
Wang, H. T.;
Ren, F.;
Hlad, M.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Li, C.;
Low, Z. N.;
Lin, J.;
Johnson, J. W.;
Rajagopal, P.;
Roberts, J. C.;
Piner, E. L.;
Linthicum, K. J.

Publication type:

Article

Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 672, doi. 10.1007/s11664-007-0297-z

By:

Speer, Kevin M.;
Neudeck, Philip G.;
Spry, David J.;
Trunek, Andrew J.;
Pirouz, Pirouz

Publication type:

Article

First-Principles Studies of Metal (111)/ZnO{0001} Interfaces.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 743, doi. 10.1007/s11664-007-0295-1

By:

Yufeng Dong;
Brillson, L. J.

Publication type:

Article

Structural and Morphological Investigation of Pendeo-Epitaxy 3C-SiC on Si Substrates.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 681, doi. 10.1007/s11664-007-0294-2

By:

Kim, Byeung C.;
Capano, Michael A.

Publication type:

Article