Works matching IS 03615235 AND DT 2008 AND VI 37 AND IP 5
Results: 41
Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 730, doi. 10.1007/s11664-008-0406-7
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- Article
Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 641, doi. 10.1007/s11664-008-0392-9
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Formation of Low-Resistance Ohmic Contact by Damage-Proof Selective-Area Growth of Single-Crystal n<sup>+</sup>-GaN Using Plasma-Assisted Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 635, doi. 10.1007/s11664-008-0390-y
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Foreword.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 545, doi. 10.1007/s11664-008-0388-5
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Crystalline SiN<sub>x</sub> Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 628, doi. 10.1007/s11664-008-0386-7
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Optical Hall Effect in Hexagonal InN.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 611, doi. 10.1007/s11664-008-0385-8
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Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 624, doi. 10.1007/s11664-008-0384-9
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Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 616, doi. 10.1007/s11664-008-0382-y
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Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 603, doi. 10.1007/s11664-007-0373-4
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Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 607, doi. 10.1007/s11664-007-0370-7
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- Article
Silicon Carbide Terahertz Emitting Devices.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 726, doi. 10.1007/s11664-007-0371-6
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- Article
Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 770, doi. 10.1007/s11664-007-0365-4
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- Article
Cathodoluminescence Study on Spatial Luminescence Properties of InN/GaN Multiple Quantum Wells Consisting of 1-Monolayer-Thick InN Wells/GaN Matrix.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 597, doi. 10.1007/s11664-007-0363-6
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ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 755, doi. 10.1007/s11664-007-0362-7
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Annealing Studies on Zinc Oxide Thin Films Deposited by Magnetron Sputtering.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 764, doi. 10.1007/s11664-007-0357-4
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Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 558, doi. 10.1007/s11664-007-0355-6
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Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 585, doi. 10.1007/s11664-007-0353-8
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Growth of Polarity-Controlled ZnO Films on (0001) Al<sub>2</sub>O<sub>3</sub>.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 736, doi. 10.1007/s11664-007-0350-y
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Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 721, doi. 10.1007/s11664-007-0347-6
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Effect of MBE Growth Conditions on Multiple Electron Transport in InN.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 593, doi. 10.1007/s11664-007-0345-8
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Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 554, doi. 10.1007/s11664-007-0336-9
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Growth of GaN Films on Si (100) Buffered with ZnO by Ion-Beam-Assisted Filtered Cathodic Vacuum Arc Technique.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 573, doi. 10.1007/s11664-007-0322-2
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Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 546, doi. 10.1007/s11664-007-0332-0
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A High-Performance Ultraviolet Photoconductive Detector Based on a ZnO Film Grown by RF Sputtering.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 760, doi. 10.1007/s11664-007-0329-8
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Investigation of Electron--Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 706, doi. 10.1007/s11664-007-0328-9
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Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 655, doi. 10.1007/s11664-007-0327-x
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Some Critical Materials and Processing Issues in SiC Power Devices.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 646, doi. 10.1007/s11664-007-0321-3
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1200 V 4H-SiC Bipolar Junction Transistors with A Record ß of 70.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 662, doi. 10.1007/s11664-007-0331-1
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Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 578, doi. 10.1007/s11664-007-0320-4
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Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 713, doi. 10.1007/s11664-007-0314-2
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Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 569, doi. 10.1007/s11664-007-0313-3
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Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 699, doi. 10.1007/s11664-007-0311-5
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The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 666, doi. 10.1007/s11664-007-0310-6
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Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 691, doi. 10.1007/s11664-007-0308-0
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Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 685, doi. 10.1007/s11664-007-0306-2
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Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al<sub>0.58</sub>Ga<sub>0.42</sub>N.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 564, doi. 10.1007/s11664-007-0300-8
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Quantum Confinement and Carrier Localization Effects in ZnO/Mg<sub>x</sub>Zn<sub>1</sub>-<sub>x</sub>O Wells Synthesized by Pulsed Laser Deposition.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 749, doi. 10.1007/s11664-007-0299-x
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Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 550, doi. 10.1007/s11664-007-0298-y
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- Article
Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p<sup>+</sup>n Junction Diodes Grown on 4H-SiC Mesas.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 672, doi. 10.1007/s11664-007-0297-z
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First-Principles Studies of Metal (111)/ZnO{0001} Interfaces.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 743, doi. 10.1007/s11664-007-0295-1
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Structural and Morphological Investigation of Pendeo-Epitaxy 3C-SiC on Si Substrates.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 681, doi. 10.1007/s11664-007-0294-2
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