Works matching IS 03615235 AND DT 2008 AND VI 37 AND IP 4
Results: 23
Foreword.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 373, doi. 10.1007/s11664-008-0395-6
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Study of Fracture Mechanics in Testing Interfacial Fracture of Solder Joints.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 417, doi. 10.1007/s11664-008-0393-8
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Antioxidant-Based Phase-Change Thermal Interface Materials with High Thermal Stability.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 448, doi. 10.1007/s11664-007-0376-1
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Direct Fabrication of Fine Gold Patterns from an Aqueous Solution by a UV Laser.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 523, doi. 10.1007/s11664-007-0372-5
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Memory Switching Characteristics in Amorphous Ga<sub>2</sub>Se<sub>3</sub> Films.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 540, doi. 10.1007/s11664-008-0389-4
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Liquidus Projection and Solidification of the Sn-In-Cu Ternary Alloys.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 498, doi. 10.1007/s11664-008-0380-0
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Characterization of Ge<sub>22</sub>Sb<sub>22</sub>Te<sub>56</sub> and Sb-Excess Ge<sub>15</sub>Sb<sub>47</sub>Te<sub>38</sub> Chalcogenide Thin Films for Phase-Change Memory Applications.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 535, doi. 10.1007/s11664-007-0377-0
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Luminescence of Long-Term Ordered Pure and Doped Gallium Phosphide.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 388, doi. 10.1007/s11664-007-0375-2
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Equi-Axed Grain Formation in Electrodeposited Sn-Bi.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 490, doi. 10.1007/s11664-007-0369-0
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Effect of Carbon Nanotubes on the Shear Strength and Electrical Resistivity of a Lead-Free Solder.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 515, doi. 10.1007/s11664-008-0379-6
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Temperature Dependence of Electrical and Thermal Conductivities of an Epoxy-Based Isotropic Conductive Adhesive.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 462, doi. 10.1007/s11664-007-0378-z
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Morphology of Thick SiC Epitaxial Films Grown by the Physical Vapor Transport Method.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 379, doi. 10.1007/s11664-007-0364-5
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Origin of Surface Defects in PCB Final Finishes by the Electroless Nickel Immersion Gold Process.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 527, doi. 10.1007/s11664-007-0360-9
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Determination of the Elastic Properties of Cu<sub>3</sub>Sn Through First-Principles Calculations.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 477, doi. 10.1007/s11664-007-0358-3
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Modeling of Magnetic-Field-Assisted Assembly of Semiconductor Devices.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 374, doi. 10.1007/s11664-007-0351-x
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Platinum and Rhodium Silicide--Germanide Optoelectronics.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 403, doi. 10.1007/s11664-007-0216-3
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Practical Surface Treatments and Surface Chemistry of n-Type and p-Type GaN.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 439, doi. 10.1007/s11664-007-0348-5
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Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO<sub>2</sub>/Poly-SiC Substrates.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 384, doi. 10.1007/s11664-007-0326-y
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Relationship of Band-Edge Luminescence to Recombination Lifetime in Silicon Wafers.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 396, doi. 10.1007/s11664-007-0325-z
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Analysis of Barrier Defects in Low-k/Cu Interconnects Based on Electrochemical Response and Simulation Cell.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 429, doi. 10.1007/s11664-007-0323-1
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Creep Properties of Composite Solders Reinforced with Nano- and Microsized Particles.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 507, doi. 10.1007/s11664-007-0208-3
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Effect of Oxidation on Indium Solderability.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 483, doi. 10.1007/s11664-007-0346-7
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Joule Heating Enhanced Phase Coarsening in Sn37Pb and Sn3.5Ag0.5Cu Solder Joints during Current Stressing.
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- Journal of Electronic Materials, 2008, v. 37, n. 4, p. 469, doi. 10.1007/s11664-006-0014-3
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