Works matching IS 03615235 AND DT 2008 AND VI 37 AND IP 4

Results: 23

Foreword.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 373, doi. 10.1007/s11664-008-0395-6

By:

Ravindra, N. M.

Publication type:

Article

Study of Fracture Mechanics in Testing Interfacial Fracture of Solder Joints.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 417, doi. 10.1007/s11664-008-0393-8

By:

Bang, W. H.;
Moon, M.-W.;
Kim, C.-U.;
Kang, S. H.;
Jung, J. P.;
Oh, K. H.

Publication type:

Article

Memory Switching Characteristics in Amorphous Ga2Se3 Films.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 540, doi. 10.1007/s11664-008-0389-4

By:

Bekheet, A. E.

Publication type:

Article

Liquidus Projection and Solidification of the Sn-In-Cu Ternary Alloys.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 498, doi. 10.1007/s11664-008-0380-0

By:

Shih-Kang Lin;
Ching-Feng Yang;
Shyr-Harn Wu;
Sinn-Wen Chen

Publication type:

Article

Effect of Carbon Nanotubes on the Shear Strength and Electrical Resistivity of a Lead-Free Solder.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 515, doi. 10.1007/s11664-008-0379-6

By:

Nai, S. M. L.;
Wei, J.;
Gupta, M.

Publication type:

Article

Characterization of Ge22Sb22Te56 and Sb-Excess Ge15Sb47Te38 Chalcogenide Thin Films for Phase-Change Memory Applications.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 535, doi. 10.1007/s11664-007-0377-0

By:

Sang-Ouk Ryu

Publication type:

Article

Temperature Dependence of Electrical and Thermal Conductivities of an Epoxy-Based Isotropic Conductive Adhesive.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 462, doi. 10.1007/s11664-007-0378-z

By:

Inoue, Masahiro;
Muta, Hiroaki;
Maekawa, Takuji;
Yamanaka, Shinsuke;
Suganuma, Katsuaki

Publication type:

Article

Antioxidant-Based Phase-Change Thermal Interface Materials with High Thermal Stability.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 448, doi. 10.1007/s11664-007-0376-1

By:

Aoyagi, Yasuhiro;
Chung, D. D. L.

Publication type:

Article

Luminescence of Long-Term Ordered Pure and Doped Gallium Phosphide.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 388, doi. 10.1007/s11664-007-0375-2

By:

Pyshkin, Sergei;
Ballato, John;
Bass, Michael;
Turri, Giorgio

Publication type:

Article

Direct Fabrication of Fine Gold Patterns from an Aqueous Solution by a UV Laser.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 523, doi. 10.1007/s11664-007-0372-5

By:

Senthil Kumaran, Abbu Udaiyar;
Ichimura, Masaya

Publication type:

Article

Origin of Surface Defects in PCB Final Finishes by the Electroless Nickel Immersion Gold Process.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 527, doi. 10.1007/s11664-007-0360-9

By:

Bae-Kyun Kim;
Seong-Jae Lee;
Jong-Yun Kim;
Kum-Young Ji;
Yeo-Joo Yoon;
Mi-Yang Kim;
Song-Hae Park;
Jong-Soo Yoo

Publication type:

Article

Morphology of Thick SiC Epitaxial Films Grown by the Physical Vapor Transport Method.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 379, doi. 10.1007/s11664-007-0364-5

By:

Wagner, B. P.;
Singh, N. B.;
Berghmans, A.;
Knuteson, D. J.;
Kahler, D.;
McLaughlin, S.;
Hawkins, J.;
Golombeck, J.

Publication type:

Article

Modeling of Magnetic-Field-Assisted Assembly of Semiconductor Devices.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 374, doi. 10.1007/s11664-007-0351-x

By:

Rivero, Rene D.;
Sudhakar Shet;
Booty, Michael R.;
Fiory, Anthony T.;
Ravindra, Nuggehalli M.

Publication type:

Article

Equi-Axed Grain Formation in Electrodeposited Sn-Bi.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 490, doi. 10.1007/s11664-007-0369-0

By:

Sandnes, E.;
Williams, M. E.;
Vaudin, M. D.;
Stafford, G. R.

Publication type:

Article

Platinum and Rhodium Silicide--Germanide Optoelectronics.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 403, doi. 10.1007/s11664-007-0216-3

By:

Lepselter, M. P.;
Fiory, A. T.;
Ravindra, N. M.

Publication type:

Article

Creep Properties of Composite Solders Reinforced with Nano- and Microsized Particles.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 507, doi. 10.1007/s11664-007-0208-3

By:

Yaowu Shi;
Jianping Liu;
Yanfu Yan;
Zhidong Xia;
Yongping Lei;
Fu Guo;
Xiaoyan Li

Publication type:

Article

Determination of the Elastic Properties of Cu3Sn Through First-Principles Calculations.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 477, doi. 10.1007/s11664-007-0358-3

By:

Rong An;
Chunqing Wang;
Yanhong Tian;
Huaping Wu

Publication type:

Article

Practical Surface Treatments and Surface Chemistry of n-Type and p-Type GaN.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 439, doi. 10.1007/s11664-007-0348-5

By:

Uhlrich, J. J.;
Grabow, L. C.;
Mavrikakis, M.;
Kuech, T. F.

Publication type:

Article

Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 384, doi. 10.1007/s11664-007-0326-y

By:

Anderson, T. J.;
Ren, F.;
Kim, J.;
Lin, J.;
Hlad, M.;
Gila, B. P.;
Voss, L.;
Pearton, S. J.;
Bove, P.;
Lahreche, H.;
Thuret, J.

Publication type:

Article

Effect of Oxidation on Indium Solderability.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 483, doi. 10.1007/s11664-007-0346-7

By:

Jongman Kim;
Schoeller, Harry;
Junghyun Cho;
Seungbae Park

Publication type:

Article

Analysis of Barrier Defects in Low-k/Cu Interconnects Based on Electrochemical Response and Simulation Cell.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 429, doi. 10.1007/s11664-007-0323-1

By:

Dong Mei Meng;
Michael, Nancy L.;
Young-Joon Park;
Choong-Un Kim

Publication type:

Article

Relationship of Band-Edge Luminescence to Recombination Lifetime in Silicon Wafers.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 396, doi. 10.1007/s11664-007-0325-z

By:

Ahrenkiel, R. K.;
Johnston, S. W.;
Metzger, W. K.;
Dippo, P.

Publication type:

Article

Joule Heating Enhanced Phase Coarsening in Sn37Pb and Sn3.5Ag0.5Cu Solder Joints during Current Stressing.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 469, doi. 10.1007/s11664-006-0014-3

By:

Wu, B. Y.;
Alam, M. O.;
Chan, Y. C.;
Zhong, H. W.

Publication type:

Article

Works matching IS 03615235 AND DT 2008 AND VI 37 AND IP 4

Foreword.

Study of Fracture Mechanics in Testing Interfacial Fracture of Solder Joints.

Memory Switching Characteristics in Amorphous Ga<sub>2</sub>Se<sub>3</sub> Films.

Liquidus Projection and Solidification of the Sn-In-Cu Ternary Alloys.

Effect of Carbon Nanotubes on the Shear Strength and Electrical Resistivity of a Lead-Free Solder.

Characterization of Ge<sub>22</sub>Sb<sub>22</sub>Te<sub>56</sub> and Sb-Excess Ge<sub>15</sub>Sb<sub>47</sub>Te<sub>38</sub> Chalcogenide Thin Films for Phase-Change Memory Applications.

Temperature Dependence of Electrical and Thermal Conductivities of an Epoxy-Based Isotropic Conductive Adhesive.

Antioxidant-Based Phase-Change Thermal Interface Materials with High Thermal Stability.

Luminescence of Long-Term Ordered Pure and Doped Gallium Phosphide.

Direct Fabrication of Fine Gold Patterns from an Aqueous Solution by a UV Laser.

Origin of Surface Defects in PCB Final Finishes by the Electroless Nickel Immersion Gold Process.

Morphology of Thick SiC Epitaxial Films Grown by the Physical Vapor Transport Method.

Modeling of Magnetic-Field-Assisted Assembly of Semiconductor Devices.

Equi-Axed Grain Formation in Electrodeposited Sn-Bi.

Platinum and Rhodium Silicide--Germanide Optoelectronics.

Creep Properties of Composite Solders Reinforced with Nano- and Microsized Particles.

Determination of the Elastic Properties of Cu<sub>3</sub>Sn Through First-Principles Calculations.

Practical Surface Treatments and Surface Chemistry of n-Type and p-Type GaN.

Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO<sub>2</sub>/Poly-SiC Substrates.

Effect of Oxidation on Indium Solderability.

Analysis of Barrier Defects in Low-k/Cu Interconnects Based on Electrochemical Response and Simulation Cell.

Relationship of Band-Edge Luminescence to Recombination Lifetime in Silicon Wafers.

Joule Heating Enhanced Phase Coarsening in Sn37Pb and Sn3.5Ag0.5Cu Solder Joints during Current Stressing.