Works matching IS 03615235 AND DT 2008 AND VI 37 AND IP 12
Results: 18
Power Generator Modules of Segmented Bi<sub>2</sub>Te<sub>3</sub> and ErAs:(InGaAs)<sub>1− x </sub>(InAlAs)<sub> x </sub>.
- Published in:
- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1786, doi. 10.1007/s11664-008-0435-2
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- Publication type:
- Article
Interband Cascade Lasers with Wavelengths Spanning 2.9 μm to 5.2 μm.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1780, doi. 10.1007/s11664-008-0444-1
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- Article
Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1774, doi. 10.1007/s11664-008-0472-x
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- Article
2.3- μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1770, doi. 10.1007/s11664-008-0495-3
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- Article
A Study on the Thermal Reliability of Cu/SnAg Double-Bump Flip-Chip Assemblies on Organic Substrates.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1832, doi. 10.1007/s11664-008-0498-0
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- Article
Design and Characterization of Fabry–Pérot MEMS-Based Short-Wave Infrared Microspectrometers.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1811, doi. 10.1007/s11664-008-0526-0
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- Article
Statistical Characterization of Open Failures in the Fine-Pitch COG Interconnection.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1851, doi. 10.1007/s11664-008-0531-3
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- Publication type:
- Article
Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1758, doi. 10.1007/s11664-008-0534-0
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- Publication type:
- Article
Effect of Stress State on Growth of Interfacial Intermetallic Compounds Between Sn-Ag-Cu Solder and Cu Substrates Coated with Electroless Ni Immersion Au.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1843, doi. 10.1007/s11664-008-0540-2
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- Article
Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1764, doi. 10.1007/s11664-008-0542-0
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- Publication type:
- Article
Cubic HfN Thin Films with Low Resistivity on Si (001) and MgO (001) Substrates.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1828, doi. 10.1007/s11664-008-0546-9
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- Publication type:
- Article
Effect of Aluminum Concentration on the Interfacial Reactions of Sn-3.0Ag- xAl Solders with Copper and ENIG Metallizations.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1858, doi. 10.1007/s11664-008-0548-7
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- Publication type:
- Article
Ionic Electrodeposition Simulation of CdTe Thin Films.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1821, doi. 10.1007/s11664-008-0549-6
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- Publication type:
- Article
Effect of Microstructural Development on Mechanical and Electrical Properties of Inkjet-Printed Ag Films.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1863, doi. 10.1007/s11664-008-0552-y
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- Publication type:
- Article
GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1793, doi. 10.1007/s11664-008-0557-6
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- Publication type:
- Article
Comparison of MBE Growth of InSb on Si (001) and GaAs (001).
- Published in:
- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1799, doi. 10.1007/s11664-008-0558-5
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- Publication type:
- Article
Enhancement of Spin–Orbit Interaction by Bandgap Engineering in InAs-Based Heterostructures.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1806, doi. 10.1007/s11664-008-0559-4
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- Article
Foreword.
- Published in:
- 2008
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- Publication type:
- Editorial