Works matching IS 03615235 AND DT 2008 AND VI 37 AND IP 10
Results: 18
Tensile Behaviors and Ratcheting Effects of Partially Sintered Chip-Attachment Films of a Nanoscale Silver Paste.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1574, doi. 10.1007/s11664-008-0516-2
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Interfacial Intermetallic Growth and Strength of Composite Lead-Free Solder Alloy Through Isothermal Aging.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1598, doi. 10.1007/s11664-008-0524-2
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Analysis and Experimental Verification of the Volume Effect in the Reaction Between Zn-Doped Solders and Cu.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1591, doi. 10.1007/s11664-008-0521-5
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Morphological Evolution of the Reaction Product at the Sn-9wt.%Zn/Thin-Film Cu Interface.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1605, doi. 10.1007/s11664-008-0517-1
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Electromigration Reliability and Morphologies of Cu Pillar Flip-Chip Solder Joints with Cu Substrate Pad Metallization.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1624, doi. 10.1007/s11664-008-0515-3
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Air-Gaps for High-Performance On-Chip Interconnect Part I: Improvement in Thermally Decomposable Template.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1524, doi. 10.1007/s11664-008-0514-4
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Air-Gaps for High-Performance On-Chip Interconnect Part II: Modeling, Fabrication, and Characterization.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1534, doi. 10.1007/s11664-008-0513-5
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Effect of Ar<sup>+</sup> Radiofrequency Plasma Treatment Conditions on the Interfacial Adhesion Energy Between Atomic-Layer-Deposited Al<sub>2</sub>O<sub>3</sub> and Cu Thin Films in Embedded Capacitors.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1565, doi. 10.1007/s11664-008-0511-7
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- Article
Electromigration-Induced Void Formation at the Cu<sub>5</sub>Zn<sub>8</sub>/Solder Interface in a Cu/Sn-9Zn/Cu Sandwich.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1611, doi. 10.1007/s11664-008-0512-6
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Large-Scale Correlations in the Orientation of Grains in Lead-Free Solder Joints.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1618, doi. 10.1007/s11664-008-0509-1
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- Article
Interface Engineering and Direct Bonding of Lithium Tantalate Crystals.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1547, doi. 10.1007/s11664-008-0508-2
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- Article
Theoretical Prediction and Experimental Measurement of the Degree of Cure of Anisotropic Conductive Films (ACFs) for Chip-On-Flex (COF) Applications.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1580, doi. 10.1007/s11664-008-0507-3
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Comparison of Impact Toughness and Fracture Morphologies Between Pb-Containing and Pb-Free Solder Joints Subject to the Charpy Impact Test.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1631, doi. 10.1007/s11664-008-0506-4
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Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1511, doi. 10.1007/s11664-008-0504-6
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- Article
Fabrication of Nickel/Gold Multilayered Shells on Polystyrene Bead Cores by Sequential Electroless Deposition Processes.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1648, doi. 10.1007/s11664-008-0503-7
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- Article
A Comparative Study of Reactive Wetting of Lead and Lead-Free Solders on Cu and (Cu<sub>6</sub>Sn<sub>5</sub>/Cu<sub>3</sub>Sn)/Cu Substrates.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1640, doi. 10.1007/s11664-008-0502-8
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- Article
Low-Temperature, Strong SiO<sub>2</sub>-SiO<sub>2</sub> Covalent Wafer Bonding for III-V Compound Semiconductors-to-Silicon Photonic Integrated Circuits.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1552, doi. 10.1007/s11664-008-0489-1
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Growth and Characterizations of GaN-Based LEDs Grown on Wet-Etched Stripe-Patterned Sapphire Substrates.
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- Journal of Electronic Materials, 2008, v. 37, n. 10, p. 1560, doi. 10.1007/s11664-008-0497-1
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