Works matching IS 03615235 AND DT 2007 AND VI 36 AND IP 8

Results: 45

Diffusion of Selenium in Liquid-Phase Epitaxy--Grown Hg0.78Cd0.22Te.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 822, doi. 10.1007/s11664-007-0096-6

By:

Zhao, W.;
Golding, T. D.;
Littler, C. L.;
Dinan, J. H.;
Dura, J. A.;
Lindstrom, R. M.

Publication type:

Article

Secondary Ion Mass Spectrometry and Time-of-Flight Secondary Ion Mass Spectrometry Study of Impurity Measurements in HgCdTe.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1106, doi. 10.1007/s11664-007-0183-8

By:

Price, Steve;
Wang, Larry;
Wang, Alice;
Ginwalla, Arwa;
Mowat, Ian

Publication type:

Article

Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1098, doi. 10.1007/s11664-007-0182-9

By:

Carmody, M.;
Edwall, D.;
Ellsworth, J.;
Arias, J.;
Groenert, M.;
Jacobs, R.;
Almeida, L. A.;
Dinan, J. H.;
Chen, Y.;
Brill, G;
Dhar, N. K.

Publication type:

Article

Synchrotron X-ray Based Characterization of CdZnTe Crystals.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1092, doi. 10.1007/s11664-007-0181-x

By:

Duff, Martine C.;
Hunter, Douglas B.;
Nuessle, Patterson;
Black, David R.;
Burdette, Harold;
Woicik, Joseph;
Burger, Arnold;
Groza, Michael

Publication type:

Article

Foreword.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 821, doi. 10.1007/s11664-007-0180-y

By:

Sivananthan, S.;
Anter, Y.;
Dhar, N. K.

Publication type:

Article

High-Performance LWIR MBE-Grown HgCdTe/Si Focal Plane Arrays.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1085, doi. 10.1007/s11664-007-0177-6

By:

Bornfreund, Richard;
Rosbeck, Joe P.;
Thai, Yen N.;
Smith, Edward P.;
Lofgreen, Daniel D.;
Vilela, Mauro F.;
Buell, Aimee A.;
Newton, Michael D.;
Kosai, Kenneth;
Johnson, Scott M.;
Delyon, Terry J.;
Jensen, John E.;
Tidrow, Meimei Z.

Publication type:

Article

Fast Detection of Precipitates and Oxides on CdZnTe Surfaces by Spectroscopic Ellipsometry.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1077, doi. 10.1007/s11664-007-0176-7

By:

Badano, G.;
Million, A.;
Canava, B.;
Tran-Van, P.;
Etcheberry, A.

Publication type:

Article

Effect of Dislocations on VLWIR HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1068, doi. 10.1007/s11664-007-0173-x

By:

Parodos, T.;
Fitzgerald, E. A.;
Caster, A.;
Tobin, S.;
Marciniec, J.;
Welsch, J.;
Hairston, A.;
Lamarre, P.;
Riendeau, J.;
Woodward, B.;
Hu, S.;
Reine, M.;
Lovecchio, P.

Publication type:

Article

Chemical Etching of CdTe in Aqueous Solutions of H2O2-HI-Citric Acid.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1021, doi. 10.1007/s11664-007-0166-9

By:

Ivanits'ka, V. G.;
Moravec, P.;
Franc, J.;
Tomashik, Z. F.;
Feychuk, P. I.;
Tomashik, V. M.;
Shcherbak, L. P.;
Mašek, K.;
Höschl, P.

Publication type:

Article

Metal-Organic Chemical Vapor Deposition of Hg1-xCdxTe Fully Doped Heterostructures Without Postgrowth Anneal for Uncooled MWIR and LWIR Detectors.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1052, doi. 10.1007/s11664-007-0171-z

By:

Piotrowski, Adam;
Kłos, Krzystof

Publication type:

Article

Fabrication and Characterization of Small Unit-Cell Molecular Beam Epitaxy Grown HgCdTe-on-Si Mid-Wavelength Infrared Detectors.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1045, doi. 10.1007/s11664-007-0169-6

By:

Smith, E. P. G.;
Venzor, G. M.;
Petraitis, Y.;
Liguori, M. V.;
Levy, A. R.;
Rabkin, C. K.;
Peterson, J. M.;
Reddy, M.;
Johnson, S. M.;
Bangs, J. W.

Publication type:

Article

Status of HgCdTe Bicolor and Dual-Band Infrared Focal Arrays at LETI.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1031, doi. 10.1007/s11664-007-0168-7

By:

Destefanis, G.;
Baylet, J.;
Ballet, P.;
Castelein, P.;
Rothan, F.;
Gravrand, O.;
Rothman, J.;
Chamonal, J. P.;
Million, A.

Publication type:

Article

Elimination of Inclusions in (CdZn)Te Substrates by Post-grown Annealing.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1025, doi. 10.1007/s11664-007-0167-8

By:

Belas, E.;
Bugár, M.;
Grill, R.;
Horodyský, P.;
Feš, R.;
Franc, J.;
Moravec, P.;
Matej, Z.;
Höschl, P.

Publication type:

Article

HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1059, doi. 10.1007/s11664-007-0172-y

By:

Reine, M. B.;
Marciniec, J. W.;
Wong, K. K.;
Parodos, T.;
Mullarkey, J. D.;
Lamarre, P. A.;
Tobin, S. P.;
Gustavsen, K. A.;
Williams, G. M.

Publication type:

Article

Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1013, doi. 10.1007/s11664-007-0164-y

By:

Mandal, Krishna C.;
Sung Hoon Kang;
Choi, Michael;
Jiuan Wei;
Lili Zheng;
Hui Zhang;
Jellison, Gerald E.;
Groza, Michael;
Burger, Arnold

Publication type:

Article

Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1007, doi. 10.1007/s11664-007-0163-z

By:

Stoltz, A. J.;
Varesi, J. B.;
Benson, J. D.

Publication type:

Article

Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1000, doi. 10.1007/s11664-007-0162-0

By:

Yong Chang;
Guha, S.;
Grein, C. H.;
Velicu, S.;
Flatté, M. E.;
Nathan, V.;
Sivananthan, S.

Publication type:

Article

Comparative Study of HgCdTe Etchants: An Electrical Characterization.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 993, doi. 10.1007/s11664-007-0159-8

By:

Mallick, Shubhrangshu;
Kiran, Rajni;
Ghosh, Siddhartha;
Velicu, Silviu;
Sivananthan, Sivalingam

Publication type:

Article

MCT-on-Silicon Negative Luminescence Devices with High Efficiency.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 988, doi. 10.1007/s11664-007-0152-2

By:

Lindle, J. R.;
Bewley, W. W.;
Vurgaftman, I.;
Meyer, J. R.;
Thomas, M. L.;
Tennant, W. E.;
Edwall, D. D.;
Piquette, E.

Publication type:

Article

From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n+n-/p Ion Implantation Technology.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 981, doi. 10.1007/s11664-007-0151-3

By:

Gravrand, O.;
De Borniol, E.;
Bisotto, S.;
Mollard, L.;
Destefanis, G.

Publication type:

Article

Investigation of Artificial Forced Cooling in the Bridgman Crystal Growth of Cadmium Zinc Telluride.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 971, doi. 10.1007/s11664-007-0149-x

By:

Juncheng Liu;
Jiao Li;
Guodong Zhang;
Changxing Li;
Lennon, Craig;
Sivananthan, Siva

Publication type:

Article

Gain and Dark Current Characteristics of Planar HgCdTe Avalanche Photo Diodes.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 963, doi. 10.1007/s11664-007-0147-z

By:

Perrais, Gwladys;
Gravrand, Olivier;
Baylet, Jacques;
Destefanis, Gerard;
Rothman, Johan

Publication type:

Article

Improved Defect and Fourier Transform Infrared Spectroscopy Analysis for Prediction of Yield for HgCdTe Multilayer Heterostructures.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 958, doi. 10.1007/s11664-007-0146-0

By:

Lofgreen, D. D.;
Vilela, M. F.;
Smith, E. P.;
Newton, M. D.;
Beard, D.;
Johnson, S. M.

Publication type:

Article

Surface Structure of Molecular Beam Epitaxy (211)B HgCdTe.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 949, doi. 10.1007/s11664-007-0143-3

By:

Benson, J. D.;
Almeida, L. A.;
Carmody, M. W.;
Edwall, D. D.;
Markunas, J. K.;
Jacobs, R. N.;
Martinka, M.;
Lee, U.

Publication type:

Article

Assessment of Tight Pixel Geometry Influence on Surface Chemistry of Hg1-XCdXTe Focal Plane Array by Time of Flight--Secondary Ion Mass Spectroscopy: Novel Analytical Methods.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 937, doi. 10.1007/s11664-007-0141-5

By:

Garwood, G.;
Olshove, R.;
Pettijohn, E.;
Bangs, J.;
Liguori, M.;
Olson, E.;
Lua, F.

Publication type:

Article

Design and Assessment of Metal-Organic Vapor Phase Epitaxy--Grown Dual Waveband Infrared Detectors.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 931, doi. 10.1007/s11664-007-0135-3

By:

Gordon, N. T.;
Abbott, P.;
Giess, J.;
Graham, A.;
Hails, J. E.;
Hall, D. J.;
Hipwood, L.;
Jones, C. L.;
Maxey, C. D.;
Price, J.

Publication type:

Article

Selective Growth of CdTe on Si(211): First-Principle Calculations.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 925, doi. 10.1007/s11664-007-0134-4

By:

Huang, Y.;
Chen, X. S.;
Duan, H.;
Lu, W.

Publication type:

Article

Extended X-Ray Absorption Fine Structure Study of Arsenic in HgCdTe.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 919, doi. 10.1007/s11664-007-0133-5

By:

Plissard, S.;
Giusti, G.;
Polge, B.;
Ballet, P.;
Million, A.;
Biquard, X.;
Molva, E.;
Barnes, J. P.;
Holliger, P.

Publication type:

Article

Effect of High-Density Plasma Process Parameters on Carrier Transport Properties in p-to-n Type Converted Hg0.7Cd0.3Te Layer.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 913, doi. 10.1007/s11664-007-0132-6

By:

Park, B. A.;
Musca, C. A.;
Antoszewski, J.;
Dell, J. M.;
Faraone, L.

Publication type:

Article

Accurate Determination of the Matrix Composition Profile of Hg1-xCdxTe by Secondary Ion Mass Spectrometry.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 910, doi. 10.1007/s11664-007-0131-7

By:

Wang, Larry;
Wang, Alice;
Price, Steve

Publication type:

Article

Nucleation of ZnTe on the As-Terminated Si(112) Surface.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 905, doi. 10.1007/s11664-007-0128-2

By:

Jaime-Vasquez, M.;
Martinka, M.;
Jacobs, R. N.;
Benson, J. D.

Publication type:

Article

Development of Molecular Beam Epitaxially Grown Hg1-xCdxTe for High-Density Vertically-Integrated Photodiode-Based Focal Plane Arrays.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 900, doi. 10.1007/s11664-007-0127-3

By:

Aqariden, F.;
Dreiske, P. D.;
Kinch, M. A.;
Liao, P. K.;
Murphy, T.;
Schaake, H. F.;
Shafer, T. A.;
Shih, H. D.;
Teherani, T. H.

Publication type:

Article

Fast and Reversible Wettability Transitions on ZnO Nanostructures.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 895, doi. 10.1007/s11664-007-0126-4

By:

Zhang, Z.;
Chen, H.;
Zhong, J.;
Saraf, G.;
Lu, Y.

Publication type:

Article

Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 890, doi. 10.1007/s11664-007-0123-7

By:

He Duan;
Xiaoshuang Chen;
Yan Huang;
Wei Lu

Publication type:

Article

Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 884, doi. 10.1007/s11664-007-0120-x

By:

Westerhout, R. J.;
Musca, C. A.;
Antoszewski, J.;
Dell, J. M.;
Faraone, L.

Publication type:

Article

Optical and Structural Properties of CdTe Grown by Molecular Beam Epitaxy at Low Temperature for Resonant-Cavity-Enhanced HgCdTe Detectors.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 877, doi. 10.1007/s11664-007-0115-7

By:

Wehner, J. G. A.;
Sewell, R. H.;
Musca, C. A.;
Dell, J. M.;
Faraone, L.

Publication type:

Article

Screening Effects in High Resistivity CdTe for X-ray and Gamma Ray Detectors.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 871, doi. 10.1007/s11664-007-0114-8

By:

Kubát, J.;
Franc, J.;
Grill, R.;
Horodyský, P.;
Hlídek, P.;
Belas, E.

Publication type:

Article

Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 864, doi. 10.1007/s11664-007-0113-9

By:

Hails, Janet E.;
Keir, Andrew M.;
Graham, Andrew;
Williams, Gerald M.;
Giess, Jean

Publication type:

Article

Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 857, doi. 10.1007/s11664-007-0111-y

By:

Bertazzi, Francesco;
Goano, Michele;
Bellotti, Enrico

Publication type:

Article

Antimonide Type-II "W" Photodiodes with Long-Wave Infrared R0A Comparable to HgCdTe.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 852, doi. 10.1007/s11664-007-0109-5

By:

Cadeny, C. L.;
Aifer, E. H.;
Vurgaftman, I.;
Tischler, J. G.;
Meyer, J. R.;
Warner, J. H.;
Jackson, E. M.

Publication type:

Article

Modeling and Design Considerations of HgCdTe Infrared Photodiodes under Nonequilibrium Operation.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 846, doi. 10.1007/s11664-007-0107-7

By:

Emelie, P. Y.;
Phillips, J. D.;
Velicu, S.;
Grein, C. H.

Publication type:

Article

Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 841, doi. 10.1007/s11664-007-0106-8

By:

Emelie, P. Y.;
Cagin, E.;
Siddiqui, J.;
Phillips, J. D.;
Fulk, C.;
Garland, J.;
Sivananthan, S.

Publication type:

Article

Excimer Laser Etching Process of CdTe Crystals for Formation of Deep Vertical Trenches.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 837, doi. 10.1007/s11664-007-0105-9

By:

Yasuda, K.;
Niraula, M.;
Nakamura, K.;
Yokota, M.;
Shingu, I.;
Noda, K.;
Agata, Y.;
Abe, K.;
Eryu, O.

Publication type:

Article

Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 832, doi. 10.1007/s11664-007-0104-x

By:

Johnstone, D.;
Golding, T. D.;
Hellmer, R.;
Dinan, J. H.;
Carmody, M.

Publication type:

Article

Magneto-Transport Characterization of p-Type HgCdTe.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 8, p. 826, doi. 10.1007/s11664-007-0103-y

By:

Tsen, G. K. O.;
Musca, C. A.;
Dell, J. M.;
Antoszewski, J.;
Faraone, L.

Publication type:

Article