Works matching IS 03615235 AND DT 2007 AND VI 36 AND IP 8

Results: 45

Diffusion of Selenium in Liquid-Phase Epitaxy--Grown Hg0.78Cd0.22Te.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 822, doi. 10.1007/s11664-007-0096-6
By:
- Zhao, W.;
- Golding, T. D.;
- Littler, C. L.;
- Dinan, J. H.;
- Dura, J. A.;
- Lindstrom, R. M.
Publication type:
Article
Secondary Ion Mass Spectrometry and Time-of-Flight Secondary Ion Mass Spectrometry Study of Impurity Measurements in HgCdTe.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1106, doi. 10.1007/s11664-007-0183-8
By:
- Price, Steve;
- Wang, Larry;
- Wang, Alice;
- Ginwalla, Arwa;
- Mowat, Ian
Publication type:
Article
Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1098, doi. 10.1007/s11664-007-0182-9
By:
- Carmody, M.;
- Edwall, D.;
- Ellsworth, J.;
- Arias, J.;
- Groenert, M.;
- Jacobs, R.;
- Almeida, L. A.;
- Dinan, J. H.;
- Chen, Y.;
- Brill, G;
- Dhar, N. K.
Publication type:
Article
Synchrotron X-ray Based Characterization of CdZnTe Crystals.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1092, doi. 10.1007/s11664-007-0181-x
By:
- Duff, Martine C.;
- Hunter, Douglas B.;
- Nuessle, Patterson;
- Black, David R.;
- Burdette, Harold;
- Woicik, Joseph;
- Burger, Arnold;
- Groza, Michael
Publication type:
Article
Foreword.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 821, doi. 10.1007/s11664-007-0180-y
By:
- Sivananthan, S.;
- Anter, Y.;
- Dhar, N. K.
Publication type:
Article
High-Performance LWIR MBE-Grown HgCdTe/Si Focal Plane Arrays.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1085, doi. 10.1007/s11664-007-0177-6
By:
- Bornfreund, Richard;
- Rosbeck, Joe P.;
- Thai, Yen N.;
- Smith, Edward P.;
- Lofgreen, Daniel D.;
- Vilela, Mauro F.;
- Buell, Aimee A.;
- Newton, Michael D.;
- Kosai, Kenneth;
- Johnson, Scott M.;
- Delyon, Terry J.;
- Jensen, John E.;
- Tidrow, Meimei Z.
Publication type:
Article
Fast Detection of Precipitates and Oxides on CdZnTe Surfaces by Spectroscopic Ellipsometry.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1077, doi. 10.1007/s11664-007-0176-7
By:
- Badano, G.;
- Million, A.;
- Canava, B.;
- Tran-Van, P.;
- Etcheberry, A.
Publication type:
Article
Effect of Dislocations on VLWIR HgCdTe Photodiodes.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1068, doi. 10.1007/s11664-007-0173-x
By:
- Parodos, T.;
- Fitzgerald, E. A.;
- Caster, A.;
- Tobin, S.;
- Marciniec, J.;
- Welsch, J.;
- Hairston, A.;
- Lamarre, P.;
- Riendeau, J.;
- Woodward, B.;
- Hu, S.;
- Reine, M.;
- Lovecchio, P.
Publication type:
Article
HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1059, doi. 10.1007/s11664-007-0172-y
By:
- Reine, M. B.;
- Marciniec, J. W.;
- Wong, K. K.;
- Parodos, T.;
- Mullarkey, J. D.;
- Lamarre, P. A.;
- Tobin, S. P.;
- Gustavsen, K. A.;
- Williams, G. M.
Publication type:
Article
Metal-Organic Chemical Vapor Deposition of Hg1-xCdxTe Fully Doped Heterostructures Without Postgrowth Anneal for Uncooled MWIR and LWIR Detectors.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1052, doi. 10.1007/s11664-007-0171-z
By:
- Piotrowski, Adam;
- Kłos, Krzystof
Publication type:
Article
Fabrication and Characterization of Small Unit-Cell Molecular Beam Epitaxy Grown HgCdTe-on-Si Mid-Wavelength Infrared Detectors.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1045, doi. 10.1007/s11664-007-0169-6
By:
- Smith, E. P. G.;
- Venzor, G. M.;
- Petraitis, Y.;
- Liguori, M. V.;
- Levy, A. R.;
- Rabkin, C. K.;
- Peterson, J. M.;
- Reddy, M.;
- Johnson, S. M.;
- Bangs, J. W.
Publication type:
Article
Status of HgCdTe Bicolor and Dual-Band Infrared Focal Arrays at LETI.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1031, doi. 10.1007/s11664-007-0168-7
By:
- Destefanis, G.;
- Baylet, J.;
- Ballet, P.;
- Castelein, P.;
- Rothan, F.;
- Gravrand, O.;
- Rothman, J.;
- Chamonal, J. P.;
- Million, A.
Publication type:
Article
Elimination of Inclusions in (CdZn)Te Substrates by Post-grown Annealing.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1025, doi. 10.1007/s11664-007-0167-8
By:
- Belas, E.;
- Bugár, M.;
- Grill, R.;
- Horodyský, P.;
- Feš, R.;
- Franc, J.;
- Moravec, P.;
- Matej, Z.;
- Höschl, P.
Publication type:
Article
Chemical Etching of CdTe in Aqueous Solutions of H2O2-HI-Citric Acid.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1021, doi. 10.1007/s11664-007-0166-9
By:
- Ivanits'ka, V. G.;
- Moravec, P.;
- Franc, J.;
- Tomashik, Z. F.;
- Feychuk, P. I.;
- Tomashik, V. M.;
- Shcherbak, L. P.;
- Mašek, K.;
- Höschl, P.
Publication type:
Article
Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1013, doi. 10.1007/s11664-007-0164-y
By:
- Mandal, Krishna C.;
- Sung Hoon Kang;
- Choi, Michael;
- Jiuan Wei;
- Lili Zheng;
- Hui Zhang;
- Jellison, Gerald E.;
- Groza, Michael;
- Burger, Arnold
Publication type:
Article
From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n+n-/p Ion Implantation Technology.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 981, doi. 10.1007/s11664-007-0151-3
By:
- Gravrand, O.;
- De Borniol, E.;
- Bisotto, S.;
- Mollard, L.;
- Destefanis, G.
Publication type:
Article
Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1000, doi. 10.1007/s11664-007-0162-0
By:
- Yong Chang;
- Guha, S.;
- Grein, C. H.;
- Velicu, S.;
- Flatté, M. E.;
- Nathan, V.;
- Sivananthan, S.
Publication type:
Article
Comparative Study of HgCdTe Etchants: An Electrical Characterization.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 993, doi. 10.1007/s11664-007-0159-8
By:
- Mallick, Shubhrangshu;
- Kiran, Rajni;
- Ghosh, Siddhartha;
- Velicu, Silviu;
- Sivananthan, Sivalingam
Publication type:
Article
MCT-on-Silicon Negative Luminescence Devices with High Efficiency.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 988, doi. 10.1007/s11664-007-0152-2
By:
- Lindle, J. R.;
- Bewley, W. W.;
- Vurgaftman, I.;
- Meyer, J. R.;
- Thomas, M. L.;
- Tennant, W. E.;
- Edwall, D. D.;
- Piquette, E.
Publication type:
Article
Accurate Determination of the Matrix Composition Profile of Hg1-xCdxTe by Secondary Ion Mass Spectrometry.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 910, doi. 10.1007/s11664-007-0131-7
By:
- Wang, Larry;
- Wang, Alice;
- Price, Steve
Publication type:
Article
Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 1007, doi. 10.1007/s11664-007-0163-z
By:
- Stoltz, A. J.;
- Varesi, J. B.;
- Benson, J. D.
Publication type:
Article
Gain and Dark Current Characteristics of Planar HgCdTe Avalanche Photo Diodes.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 963, doi. 10.1007/s11664-007-0147-z
By:
- Perrais, Gwladys;
- Gravrand, Olivier;
- Baylet, Jacques;
- Destefanis, Gerard;
- Rothman, Johan
Publication type:
Article
Improved Defect and Fourier Transform Infrared Spectroscopy Analysis for Prediction of Yield for HgCdTe Multilayer Heterostructures.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 958, doi. 10.1007/s11664-007-0146-0
By:
- Lofgreen, D. D.;
- Vilela, M. F.;
- Smith, E. P.;
- Newton, M. D.;
- Beard, D.;
- Johnson, S. M.
Publication type:
Article
Surface Structure of Molecular Beam Epitaxy (211)B HgCdTe.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 949, doi. 10.1007/s11664-007-0143-3
By:
- Benson, J. D.;
- Almeida, L. A.;
- Carmody, M. W.;
- Edwall, D. D.;
- Markunas, J. K.;
- Jacobs, R. N.;
- Martinka, M.;
- Lee, U.
Publication type:
Article
Investigation of Artificial Forced Cooling in the Bridgman Crystal Growth of Cadmium Zinc Telluride.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 971, doi. 10.1007/s11664-007-0149-x
By:
- Juncheng Liu;
- Jiao Li;
- Guodong Zhang;
- Changxing Li;
- Lennon, Craig;
- Sivananthan, Siva
Publication type:
Article
Assessment of Tight Pixel Geometry Influence on Surface Chemistry of Hg1-XCdXTe Focal Plane Array by Time of Flight--Secondary Ion Mass Spectroscopy: Novel Analytical Methods.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 937, doi. 10.1007/s11664-007-0141-5
By:
- Garwood, G.;
- Olshove, R.;
- Pettijohn, E.;
- Bangs, J.;
- Liguori, M.;
- Olson, E.;
- Lua, F.
Publication type:
Article
Selective Growth of CdTe on Si(211): First-Principle Calculations.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 925, doi. 10.1007/s11664-007-0134-4
By:
- Huang, Y.;
- Chen, X. S.;
- Duan, H.;
- Lu, W.
Publication type:
Article
Extended X-Ray Absorption Fine Structure Study of Arsenic in HgCdTe.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 919, doi. 10.1007/s11664-007-0133-5
By:
- Plissard, S.;
- Giusti, G.;
- Polge, B.;
- Ballet, P.;
- Million, A.;
- Biquard, X.;
- Molva, E.;
- Barnes, J. P.;
- Holliger, P.
Publication type:
Article
Effect of High-Density Plasma Process Parameters on Carrier Transport Properties in p-to-n Type Converted Hg0.7Cd0.3Te Layer.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 913, doi. 10.1007/s11664-007-0132-6
By:
- Park, B. A.;
- Musca, C. A.;
- Antoszewski, J.;
- Dell, J. M.;
- Faraone, L.
Publication type:
Article
Design and Assessment of Metal-Organic Vapor Phase Epitaxy--Grown Dual Waveband Infrared Detectors.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 931, doi. 10.1007/s11664-007-0135-3
By:
- Gordon, N. T.;
- Abbott, P.;
- Giess, J.;
- Graham, A.;
- Hails, J. E.;
- Hall, D. J.;
- Hipwood, L.;
- Jones, C. L.;
- Maxey, C. D.;
- Price, J.
Publication type:
Article
Nucleation of ZnTe on the As-Terminated Si(112) Surface.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 905, doi. 10.1007/s11664-007-0128-2
By:
- Jaime-Vasquez, M.;
- Martinka, M.;
- Jacobs, R. N.;
- Benson, J. D.
Publication type:
Article
Development of Molecular Beam Epitaxially Grown Hg1-xCdxTe for High-Density Vertically-Integrated Photodiode-Based Focal Plane Arrays.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 900, doi. 10.1007/s11664-007-0127-3
By:
- Aqariden, F.;
- Dreiske, P. D.;
- Kinch, M. A.;
- Liao, P. K.;
- Murphy, T.;
- Schaake, H. F.;
- Shafer, T. A.;
- Shih, H. D.;
- Teherani, T. H.
Publication type:
Article
Fast and Reversible Wettability Transitions on ZnO Nanostructures.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 895, doi. 10.1007/s11664-007-0126-4
By:
- Zhang, Z.;
- Chen, H.;
- Zhong, J.;
- Saraf, G.;
- Lu, Y.
Publication type:
Article
Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 890, doi. 10.1007/s11664-007-0123-7
By:
- He Duan;
- Xiaoshuang Chen;
- Yan Huang;
- Wei Lu
Publication type:
Article
Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 884, doi. 10.1007/s11664-007-0120-x
By:
- Westerhout, R. J.;
- Musca, C. A.;
- Antoszewski, J.;
- Dell, J. M.;
- Faraone, L.
Publication type:
Article
Optical and Structural Properties of CdTe Grown by Molecular Beam Epitaxy at Low Temperature for Resonant-Cavity-Enhanced HgCdTe Detectors.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 877, doi. 10.1007/s11664-007-0115-7
By:
- Wehner, J. G. A.;
- Sewell, R. H.;
- Musca, C. A.;
- Dell, J. M.;
- Faraone, L.
Publication type:
Article
Screening Effects in High Resistivity CdTe for X-ray and Gamma Ray Detectors.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 871, doi. 10.1007/s11664-007-0114-8
By:
- Kubát, J.;
- Franc, J.;
- Grill, R.;
- Horodyský, P.;
- Hlídek, P.;
- Belas, E.
Publication type:
Article
Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 864, doi. 10.1007/s11664-007-0113-9
By:
- Hails, Janet E.;
- Keir, Andrew M.;
- Graham, Andrew;
- Williams, Gerald M.;
- Giess, Jean
Publication type:
Article
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 857, doi. 10.1007/s11664-007-0111-y
By:
- Bertazzi, Francesco;
- Goano, Michele;
- Bellotti, Enrico
Publication type:
Article
Antimonide Type-II "W" Photodiodes with Long-Wave Infrared R0A Comparable to HgCdTe.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 852, doi. 10.1007/s11664-007-0109-5
By:
- Cadeny, C. L.;
- Aifer, E. H.;
- Vurgaftman, I.;
- Tischler, J. G.;
- Meyer, J. R.;
- Warner, J. H.;
- Jackson, E. M.
Publication type:
Article
Magneto-Transport Characterization of p-Type HgCdTe.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 826, doi. 10.1007/s11664-007-0103-y
By:
- Tsen, G. K. O.;
- Musca, C. A.;
- Dell, J. M.;
- Antoszewski, J.;
- Faraone, L.
Publication type:
Article
Modeling and Design Considerations of HgCdTe Infrared Photodiodes under Nonequilibrium Operation.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 846, doi. 10.1007/s11664-007-0107-7
By:
- Emelie, P. Y.;
- Phillips, J. D.;
- Velicu, S.;
- Grein, C. H.
Publication type:
Article
Excimer Laser Etching Process of CdTe Crystals for Formation of Deep Vertical Trenches.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 837, doi. 10.1007/s11664-007-0105-9
By:
- Yasuda, K.;
- Niraula, M.;
- Nakamura, K.;
- Yokota, M.;
- Shingu, I.;
- Noda, K.;
- Agata, Y.;
- Abe, K.;
- Eryu, O.
Publication type:
Article
Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 841, doi. 10.1007/s11664-007-0106-8
By:
- Emelie, P. Y.;
- Cagin, E.;
- Siddiqui, J.;
- Phillips, J. D.;
- Fulk, C.;
- Garland, J.;
- Sivananthan, S.
Publication type:
Article
Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 8, p. 832, doi. 10.1007/s11664-007-0104-x
By:
- Johnstone, D.;
- Golding, T. D.;
- Hellmer, R.;
- Dinan, J. H.;
- Carmody, M.
Publication type:
Article