Works matching IS 03615235 AND DT 2007 AND VI 36 AND IP 6
Results: 12
Recovery of Dry Etching-Induced Damage in n-GaN by Nitrogen Plasma Treatment at Growth Temperature.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 697, doi. 10.1007/s11664-007-0095-7
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- Article
Chemical Synthesis of Narrow-Sized Distributions of Cadmium Sulfide Nanoparticles for Fabrication of Poly-Phenylene-Vinylene--Cadmium Sulfide (PPV- CdS) Diodes.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 634, doi. 10.1007/s11664-007-0119-3
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- Article
The Effect of Bi Contamination on the Solidification Behavior of Sn-Pb Solders.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 676, doi. 10.1007/s11664-007-0117-5
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- Article
Design of Solder Joint Structure for Flip Chip Package with an Optimized Shear Test Method.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 690, doi. 10.1007/s11664-007-0140-6
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- Article
Structural and Optical Properties of ZnO Nanotips Grown on GaN Using Metalorganic Chemical Vapor Deposition.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 654, doi. 10.1007/s11664-007-0130-8
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- Article
The Feasibility of Au Ball Bonding on Sn-Plated Cu.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 682, doi. 10.1007/s11664-007-0121-9
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- Article
Electrically Nonconductive Thermal Pastes with Carbon as the Thermally Conductive Component.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 659, doi. 10.1007/s11664-007-0116-6
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- Article
Ultra-Thin Si<sub>1-x</sub> Ge<sub>x</sub> Dislocation Blocking Layers for Ge/Strained Si CMOS Devices.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 641, doi. 10.1007/s11664-007-0137-1
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- Article
A Study of Deep Defect Levels in Semi-Insulating SiC Using Optical Admittance Spectroscopy.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 623, doi. 10.1007/s11664-007-0100-1
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- Article
The Dependence on Thermal History of the Electrical Properties of an Epoxy-Based Isotropic Conductive Adhesive.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 669, doi. 10.1007/s11664-007-0125-5
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- Article
Low Damage Etching of GaN Surfaces via Bias-Assisted Photoenhanced Electrochemical Oxidation in Deionized Water.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 629, doi. 10.1007/s11664-006-0009-0
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- Article
Low Leakage Current Transport and High Breakdown Strength of Pulsed Laser Deposited HfO<sub>2</sub>/SiC Metal-Insulator-Semiconductor Device Structures.
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- Journal of Electronic Materials, 2007, v. 36, n. 6, p. 648, doi. 10.1007/s11664-006-0007-2
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- Article