Works matching IS 03615235 AND DT 2007 AND VI 36 AND IP 4

Results: 44

Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 436, doi. 10.1007/s11664-006-0086-0
By:
- Kai Qiu;
- Li, X. H.;
- Zhong, F.;
- Yin, Z. J.;
- Luo, X. D.;
- Ji, C. J.;
- Han, Q. F.;
- Chen, J. R.;
- Cao, X. C.;
- Xie, X. J.;
- Wang, Y. Q.
Publication type:
Article
Optimization of High-Quality AIN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 533, doi. 10.1007/s11664-007-0099-3
By:
- Xi, Y. A.;
- Chen, K. X.;
- Mont, F.;
- Kim, J. K.;
- Schubert, E. F.;
- Wetzel, C.;
- Liu, W.;
- Li, X.;
- Smart, J. A.
Publication type:
Article
Magnetic Properties of Fe-Implanted ZnO Nanotips Grown by Metal-Organic Chemical Vapor Deposition.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 529, doi. 10.1007/s11664-007-0110-z
By:
- Wu, P.;
- Saraf, G.;
- Lu, Y.;
- Hill, D. H.;
- Arena, D. A.;
- Bartynski, R. A.;
- Cosandey, F.;
- Al-Sharab, J. F.;
- Wielunski, L.;
- Gateau, R.;
- Dvorak, J.;
- Moodenbaugh, A.;
- Raley, J. A.;
- Yung Kee Yeo
Publication type:
Article
Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 332, doi. 10.1007/s11664-006-0084-2
By:
- Dhanaraj, Govindhan;
- Yi Chen;
- Hui Chen;
- Dang Cai;
- Hui Zhang;
- Dudley, Michael
Publication type:
Article
Characterization of Epitaxial Indium Nitride Interlayers for Ohmic Contacts to Silicon Carbide.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 312, doi. 10.1007/s11664-006-0083-3
By:
- Mohammad, F. A.;
- Cao, Y.;
- Porter, L. M.
Publication type:
Article
Foreword.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 267, doi. 10.1007/s11664-006-0082-4
By:
- Stahlbush, Robert;
- Jena, Debdeep;
- Phillips, Jamie
Publication type:
Article
Optical and Magnetic Properties of ZnO:V Prepared by Ion Implantation.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 483, doi. 10.1007/s11664-006-0081-5
By:
- Avrutin, V.;
- Özgür, Ü.;
- Chevtchenko, S.;
- Litton, C.;
- Morkoc, H.
Publication type:
Article
Effects of Illumination on Ar+-Implanted n-Type 6H-SiC Epitaxial Layers.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 340, doi. 10.1007/s11664-006-0080-6
By:
- Evwaraye, A. O.;
- Smith, S. R.;
- Mitchel, W. C.;
- Capano, M. A.
Publication type:
Article
Bias-Dependent Ultraviolet Photodetection by Au-Mg0.1Zn0.9O/ZnO-Ag Structure.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 524, doi. 10.1007/s11664-006-0079-z
By:
- Mridha, S.;
- Ghosh, R.;
- Basak, D.
Publication type:
Article
Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p-Type 4H-SiC.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 277, doi. 10.1007/s11664-006-0078-0
By:
- Gao, M.;
- Tsukimoto, S.;
- Goss, S. H.;
- Tumakha, S. P.;
- Onishi, T.;
- Murakami, M.;
- Brillson, L. J.
Publication type:
Article
Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [1120]- and [0001]-Oriented Silicon Carbide Substrates.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 285, doi. 10.1007/s11664-006-0076-2
By:
- Bishop, S. M.;
- Reynolds Jr., C. L.;
- Liliental-Weber, Z.;
- Uprety, Y.;
- Zhu, J.;
- Wang, D.;
- Park, M.;
- Molstad, J. C.;
- Barnhardt, D. E.;
- Shrivastava, A.;
- Sudarshan, T. S.;
- Davis, R. F.
Publication type:
Article
The Correlation of Surface Defects and Reverse Breakdown of 4H-SiC Schottky Barrier Diodes.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 272, doi. 10.1007/s11664-006-0075-3
By:
- Kung-Yen Lee;
- Capano, Michael A.
Publication type:
Article
Maskless Lateral Epitaxial Growth of Gallium Nitride Using Dimethylhydrazine as a Nitrogen Precursor.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 403, doi. 10.1007/s11664-006-0074-4
By:
- Takizawa, Toshiyuki;
- Shimizu, Jun;
- Ueda, Tetsuzo
Publication type:
Article
Compositional Study of Copper-Germanium Ohmic Contact to n-GaN.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 420, doi. 10.1007/s11664-006-0073-5
By:
- Schuette, Michael L.;
- Wu Lu
Publication type:
Article
Comparison of GaN and In0.04Ga0.96 N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 426, doi. 10.1007/s11664-006-0072-6
By:
- Limb, J. B.;
- Lee, W.;
- Ryou, J.-H.;
- Yoo, D.;
- Dupuis, R. D.
Publication type:
Article
Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 397, doi. 10.1007/s11664-006-0070-8
By:
- Green, R. T.;
- Tan, W. S.;
- Houston, P. A.;
- Wang, T.;
- Parbrook, P. J.
Publication type:
Article
Epitaxial Growth and Device Design Optimization of Full-Vertical GaN p-i-n Rectifiers.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 353, doi. 10.1007/s11664-006-0069-1
By:
- Dongwon Yoo;
- Jae Boum Limb;
- Jae-Hyun Ryou;
- Wonseok Lee;
- Dupuis, Russell D.
Publication type:
Article
Zinc Oxide Nanorods Grown by Arc Discharge.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 494, doi. 10.1007/s11664-006-0068-2
By:
- Zhu, G. P.;
- Xu, C. X.;
- Wu, X. F.;
- Yang, Y.;
- Sun, X. W.;
- Cui, Y. P.
Publication type:
Article
Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 409, doi. 10.1007/s11664-006-0061-9
By:
- Alivov, Y. I.;
- Özgür, Ü.;
- Gu, X.;
- Liu, C.;
- Moon, Y.;
- Morkoç, H.;
- Lopatiuk, O.;
- Chernyak, L.;
- Litton, C. W.
Publication type:
Article
Changes in Electrical Characteristics of ZnO Thin Films Due to Environmental Factors.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 442, doi. 10.1007/s11664-006-0063-7
By:
- Claflin, B.;
- Look, D. C.;
- Norton, D. R.
Publication type:
Article
Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 297, doi. 10.1007/s11664-006-0059-3
By:
- Liu, Kendrick X.;
- Stahlbush, Robert E.;
- Twigg, Mark E.;
- Caldwell, Joshua D.;
- Glaser, Evan R.;
- Hobart, Karl D.;
- Kub, Francis J.
Publication type:
Article
Epitaxial Growth and Characterization of p-Type ZnO.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 457, doi. 10.1007/s11664-006-0056-6
By:
- Pan, M.;
- Nause, J.;
- Rengarajan, V.;
- Rondon, R.;
- Park, E. H.;
- Ferguson, I. T.
Publication type:
Article
Evolution of Threading Dislocation Density and Stress in GaN Films Grown on (111) Si Substrates by Metalorganic Chemical Vapor Deposition.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 346, doi. 10.1007/s11664-006-0055-7
By:
- Weng, X.;
- Acord, J. D.;
- Jain, A.;
- Dickey, E. C.;
- Redwing, J. M.
Publication type:
Article
Annealing and Measurement Temperature Dependence of W2B- and W2B2-Based Rectifying Contacts to p-GaN.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 384, doi. 10.1007/s11664-006-0054-8
By:
- Voss, L. F.;
- Stafford, L.;
- Thaler, G. T.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Chen, J.-J.;
- Ren, F.
Publication type:
Article
Tri-Buffer Process: A New Approach to Obtain High-Quality ZnO Epitaxial Films on Sapphire Substrates.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 452, doi. 10.1007/s11664-006-0053-9
By:
- Mei, Z. X.;
- Du, X. L.;
- Wang, Y.;
- Ying, M. J.;
- Zeng, Z. Q.;
- Yuan, H. T.;
- Jia, J. F.;
- Xue, Q. K.;
- Zhang, Z.
Publication type:
Article
Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a-Plane MgxZn1-xO (0 ≤ x ≤ 0.3) Films.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 446, doi. 10.1007/s11664-006-0052-x
By:
- Saraf, Gaurav;
- Jian Zhong;
- Dulub, Olga;
- Diebold, Ulrike;
- Siegrist, Theo;
- Yicheng Lu
Publication type:
Article
Ion Beam Analysis of Amorphous and Nanocrystalline Group III-V Nitride and ZnO Thin Films.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 472, doi. 10.1007/s11664-006-0051-y
By:
- Kennedy, J.;
- Markwitz, A.;
- Trodahl, H. J.;
- Ruck, B. J.;
- Durbin, S. M.;
- Gao, W.
Publication type:
Article
Nanopatterned Contacts to GaN.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 359, doi. 10.1007/s11664-006-0050-z
By:
- Ho Gyoung Kim;
- Deb, Parijat;
- Sands, Tim
Publication type:
Article
Fabrication of p-Type ZnO Thin Films via DC Reactive Magnetron Sputtering by Using Na as the Dopant Source.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 498, doi. 10.1007/s11664-006-0047-7
By:
- Yang, L. L.;
- Ye, Z. Z.;
- Zhu, L. P.;
- Zeng, Y. J.;
- Lu, Y. F.;
- Zhao, B. H.
Publication type:
Article
The Effect of Substrate Material and Postannealing on the Photoluminescence and Piezo Properties of DC-Sputtered ZnO.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 507, doi. 10.1007/s11664-006-0046-8
By:
- Schuler, Leo P.;
- Valanoor, Nagarajan;
- Miller, Paul;
- Guy, Ian;
- Reeves, Roger J.;
- Alkaisi, Maan M.
Publication type:
Article
The Use of Cathodoluminescence during Molecular Beam Epitaxy Growth of Gallium Nitride to Determine Substrate Temperature.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 431, doi. 10.1007/s11664-006-0045-9
By:
- Lee, K.;
- Myers, T. H.
Publication type:
Article
X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal Evolution.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 414, doi. 10.1007/s11664-006-0044-x
By:
- Dalmau, R.;
- Collazo, R.;
- Mita, S.;
- Sitar, Z.
Publication type:
Article
Identification of a Three-Site Defect in Semi-Insulating 4H-SiC.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 268, doi. 10.1007/s11664-006-0043-y
By:
- Garces, N. Y.;
- Carlos, W. E.;
- Glaser, E. R.;
- Fanton, M. A.
Publication type:
Article
Effect of Temperature on Structural and Morphologic Properties of ZnO Films Annealed in Ammonia Ambient.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 502, doi. 10.1007/s11664-006-0042-z
By:
- Shoubin Xue;
- Huizhao Zhuang;
- Chengshan Xue;
- Lijun Hu;
- Baoli Li;
- Shiying Zhang
Publication type:
Article
Growth Optimization of an Electron Confining InN/GaN Quantum Well Heterostructure.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 373, doi. 10.1007/s11664-006-0041-0
By:
- Dimakis, E.;
- Iliopoulos, E.;
- Kayambaki, M.;
- Tsagaraki, K.;
- Kostopoulos, A.;
- Konstantinidis, G.;
- Georgakilas, A.
Publication type:
Article
Effect of Si Co Doping on Ferromagnetic Properties of GaGdN.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 391, doi. 10.1007/s11664-006-0040-1
By:
- Hite, J. K.;
- Frazier, R. M.;
- Davies, R. P.;
- Thaler, G. T.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Zavada, J. M.;
- Brown, E.;
- Hömmerich, U.
Publication type:
Article
Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 488, doi. 10.1007/s11664-006-0039-7
By:
- Wright, J. S.;
- Stafford, L.;
- Gila, B. P.;
- Norton, D. P.;
- Pearton, S. J.;
- Hung-Ta Wang;
- Ren, F.
Publication type:
Article
Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 318, doi. 10.1007/s11664-006-0038-8
By:
- Caldwell, Joshua D.;
- Liu, Kendrick X.;
- Tadjer, Marko J.;
- Glembocki, Orest J.;
- Stahlbush, Robert E.;
- Hobart, Karl D.;
- Kub, Fritz
Publication type:
Article
Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 368, doi. 10.1007/s11664-006-0037-9
By:
- Chen, J.-J.;
- Hlad, M.;
- Gerger, A. P.;
- Gila, B. P.;
- Ren, F.;
- Abernathy, C. R.;
- Pearton, S. J.
Publication type:
Article
Improved Long-Term Thermal Stability At 350°C Of TiB2-Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 379, doi. 10.1007/s11664-006-0036-x
By:
- Khanna, Rohit;
- Stafford, L.;
- Pearton, S. J.;
- Anderson, T. J.;
- Ren, F.;
- Kravchenko, I. I.;
- Dabiran, Amir;
- Osinsky, A.;
- Joon Yeob Lee;
- Kwan-Young Lee;
- Jihyun Kim
Publication type:
Article
Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 519, doi. 10.1007/s11664-006-0035-y
By:
- Allums, K. K.;
- Hlad, M.;
- Gerger, A. P.;
- Gila, B. P.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Ren, F.;
- Dwivedi, R.;
- Fogarty, T. N.;
- Wilkins, R.
Publication type:
Article
Ferromagnetism in Transition-Metal Doped ZnO.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 462, doi. 10.1007/s11664-006-0034-z
By:
- Pearton, S. J.;
- Norton, D. P.;
- Ivill, M. P.;
- Hebard, A. F.;
- Zavada, J. M.;
- Chen, W. M.;
- Buyanova, I. A.
Publication type:
Article
Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 324, doi. 10.1007/s11664-006-0032-1
By:
- Sundaresan, Siddarth G.;
- Rao, Mulpuri V.;
- Yonglai Tian;
- Schreifels, John A.;
- Wood, Mark C.;
- Jones, Kenneth A.;
- Davydov, Albert V.
Publication type:
Article
Effects of Electron Irradiation on Deep Centers in High-Purity Semi-Insulating 6H-SiC.
Published in:
Journal of Electronic Materials, 2007, v. 36, n. 4, p. 307, doi. 10.1007/s11664-006-0031-2
By:
- Fang, Z.-Q.;
- Claflin, B.;
- Look, D. C.;
- Farlow, G. C.
Publication type:
Article