Works matching IS 03615235 AND DT 2006 AND VI 35 AND IP 6

Results: 60

Full-Wafer Spatial Mapping of Macrodefects on HgCdTe Epitaxial Wafers Grown by MBE.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1503, doi. 10.1007/s11664-006-0292-9

By:

Roth, John A.;
Nosho, Brett Z.;
Jensen, John E.

Publication type:

Article

Material Quality Characterization of CdZnTe Substrates for HgCdTe Epitaxy.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1495, doi. 10.1007/s11664-006-0291-x

By:

Carini, G. A.;
Arnone, C.;
Bolotnikov, A. E.;
Camarda, G. S.;
De Wames, R.;
Dinan, J. H.;
Markunas, J. K.;
Raghothamachar, B.;
Sivananthan, S.;
Smith, R.;
Zhao, J.;
Zhong, Z.;
James, R. B.

Publication type:

Article

Mapping of Zinc Content in Cd1-xZnxTe by Optical Methods.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1491

By:

Horodyský, P.;
Franc, J.;
Grill, R.;
Hlídek, P.;
Moravec, P.;
Bok, J.;
Höschl, P.

Publication type:

Article

Thin Film Transmission Matrix Approach to Fourier Transform Infrared Analysis of HgCdTe Multilayer Heterostructures.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1487

By:

Lofrreen, D. D.;
Peterson, C. M.;
Buell, A. A.;
Vilela, M. F.;
Johnson, S. M.

Publication type:

Article

Investigation of HgTe-HgCdTe Superlattices by High-Resolution X-ray Diffraction.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1481, doi. 10.1007/s11664-006-0288-5

By:

Hatch, S. D.;
Sewell, R. H.;
Dell, J. M.;
Faraone, L.;
Becker, C. R.;
Usher, B.

Publication type:

Article

Effects of a-Si:H Resist Vacuum-Lithography Processing on HgCdTe.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1474, doi. 10.1007/s11664-006-0287-6

By:

Jacobs, R. N.;
Robinson, E. W.;
Jaime-Vasquez, M.;
Stoltz, A. J.;
Markunas, J.;
Almeida, L. A.;
Boyd, P. R.;
Dinan, J. H.;
Salamanca-Riba, L.

Publication type:

Article

p to n Conversion in SWIR Mercury Cadmium Telluride with Ion Milling.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1470, doi. 10.1007/s11664-006-0286-7

By:

Chandra, D.;
Schaake, H. F.;
Aqariden, F.;
Teherani, T.;
Kinch, M. A.;
Dreiske, P. D.;
Weirauch, D. F.;
Shih, H. D.

Publication type:

Article

Hydrogenation of HgCdTe Epilayers on Si Substrates Using Glow Discharge Plasma.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1465, doi. 10.1007/s11664-006-0285-8

By:

Golding, T. D.;
Hellmer, R.;
Bubulac, L.;
Dinan, J. H.;
Wang, L.;
Zhao, W.;
Carmody, M.;
Sankur, H. O.;
Edwall, D.

Publication type:

Article

Examination of the Effects of High-density Plasmas on the Surface of HgCdTe.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1461, doi. 10.1007/s11664-006-0284-9

By:

Stoltz, A. J.;
Jaime-Vasquez, M.;
Benson, J. D.;
Varesi, J. B.;
Martinka, M.

Publication type:

Article

In-situ Spectroscopic Study of the As and Te on the Si (112) Surface for High-quality Epitaxial Layers.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1455, doi. 10.1007/s11664-006-0283-x

By:

Jaime-Vasquez, M.;
Martinka, M.;
Jacobs, R. N.;
Groenert, M.

Publication type:

Article

The Structure of the Si (211) Surface.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1449, doi. 10.1007/s11664-006-0282-y

By:

Fulk, C.;
Sivananthan, S.;
Zavitz, D.;
Singh, R.;
Trenary, M.;
Chen, Y. P.;
Brill, G.;
Dhar, N.

Publication type:

Article

Investigation of HgCdTe Surface Films and Their Removal.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1443, doi. 10.1007/s11664-006-0281-z

By:

Varesi, J. B.;
Benson, J. D.;
Jaime-Vasquez, M.;
Martinka, M.;
Stoltz, A. J.;
Dinan, H. H.

Publication type:

Article

Surface Structure of (111)A HgCdTe.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1434, doi. 10.1007/s11664-006-0280-0

By:

Benson, J. D.;
Varesi, J. B.;
Stoltz, A. J.;
Smith, E. P. G.;
Johnson, S. M.;
Jaime-Vasquez, M.;
Markunas, J. K.;
Almeida, L. A.;
Molstad, J. C.

Publication type:

Article

A Comparison of Gamma Radiation Effects on Bromine- and Hydrazine-Treated HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1429, doi. 10.1007/s11664-006-0279-6

By:

Min Yung Lee;
Young Ho Kim;
Nam Ho Lee;
Yong Soo Lee;
Hee Chul Lee

Publication type:

Article

Modeling of Optical Response in Graded Absorber Layer Detectors.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1423, doi. 10.1007/s11664-006-0278-7

By:

Lee, Donald L.

Publication type:

Article

LWIR HgCdTe on Si Detector Performance and Analysis.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1417, doi. 10.1007/s11664-006-0277-8

By:

Carmody, M.;
Pasko, J. G.;
Edwall, D.;
Bailey, R.;
Arias, J.;
Groenert, M.;
Almeida, L. A.;
Dinan, J. H.;
Chen, Y.;
Brill, G.;
Dhar, N. K.

Publication type:

Article

Thermal Cycling-Induced Changes in Excess Dark Current in Very Long-Wavelength HgCdTe Photodiodes at Low Temperature.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1411, doi. 10.1007/s11664-006-0276-9

By:

Tobin, Stephen P.

Publication type:

Article

VLWIR HgCdTe Detector Current-Voltage Analysis.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1403, doi. 10.1007/s11664-006-0275-x

By:

Gilmore, Angelo Scotty;
Bangs, James;
Gerrish, Amanda

Publication type:

Article

Tunneling in Long-Wavelength Infrared HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1399, doi. 10.1007/s11664-006-0274-y

By:

Krishnamurthy, S.;
Berding, M. A.;
Robinson, H.;
Sher, A.

Publication type:

Article

HgCdTe Negative Luminescence Devices for Cold Shielding and Other Applications.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1391, doi. 10.1007/s11664-006-0273-z

By:

Lindle, J. R.;
Bewley, W. W.;
Vurgaftman, I.;
Meyer, J. R.;
Johnson, J. L.;
Thomas, M. L.;
Piquette, E. C.;
Tennant, W. E.;
Smith, E. P.;
Johnson, S. M.

Publication type:

Article

Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetimes in Long-Wavelength Infrared HgCdTe on Si.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1385, doi. 10.1007/s11664-006-0272-0

By:

Boieriu, P.;
Grein, C. H.;
Garland, J.;
Velicu, S.;
Fulk, C.;
Stoltz, A.;
Bubulac, L.;
Dinan, J. H.;
Sivananthan, S.

Publication type:

Article

Passivation Effect on Optical and Electrical Properties of Molecular Beam Epitaxy-Grown HgCdTe/CdTe/Si Layers.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1379, doi. 10.1007/s11664-006-0271-1

By:

Kiran, Rajni;
Mallick, Shubhrangshu;
Suk-Ryong Hahn;
Lee, T. S.;
Sivananthan, Sivalingam;
Ghosh, Siddhartha;
Wijewarnasuriya, P. S.

Publication type:

Article

Minority Carrier Lifetimes in HgCdTe Alloys.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1369, doi. 10.1007/s11664-006-0270-2

By:

Krishnamurthy, S.;
Berding, M. A.;
Yu, Z. G.

Publication type:

Article

Accurate Measurement of Composition, Carrier Concentration, and Photoconductive Lifetime in Hg1-xCdx Te Grown by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1360, doi. 10.1007/s11664-006-0269-8

By:

Swartz, C. H.;
Chandril, S.;
Tompkins, R. P.;
Giles, N. C.;
Myers, T. H.;
Edwall, D. D.;
Piquette, E. C.;
Kim, C. S.;
Vurgaftman, I.;
Meyer, J. R.

Publication type:

Article

The Nature of Point Defects in CdTe.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1354, doi. 10.1007/s11664-006-0268-9

By:

Fochuk, P.;
Grill, R.;
Panchuk, O.

Publication type:

Article

Internal Drift Effects on the Diffusion of Ag in CdTe.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1350, doi. 10.1007/s11664-006-0267-x

By:

Wolf, H.;
Wagner, F.;
Wichert, Th.;
Grill, R.;
Belas, E.

Publication type:

Article

Precise Arsenic Doping of HgCdTe by MBE and Effects on Compositional Interdiffusion.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1346, doi. 10.1007/s11664-006-0266-y

By:

Piquette, E. C.;
Edwall, D. D.;
Lee, D. L.;
Arias, J. M.

Publication type:

Article

p-Type HgTe/CdTe Superlattices for Very-Long Wavelength Infrared Detectors.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1341, doi. 10.1007/s11664-006-0265-z

By:

Jung, H. S.;
Boieriu, P.;
Grein, C. H.

Publication type:

Article

Study of Defect Levels in CdTe Using Thermoelectric Effect Spectroscopy.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1333, doi. 10.1007/s11664-006-0264-0

By:

Soundararajan, Raji;
Lynn, Kelvin G.;
Awadallah, Salah;
Szeles, Csaba;
Su-Huai Wei

Publication type:

Article

Elastic Strains in Heteroepitaxial ZnSe1-xTex on InGaAs/InP (001).

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1327, doi. 10.1007/s11664-006-0263-1

By:

Yarlagadda, B.;
Rodriguez, A.;
Li, P.;
Miller, B. I.;
Jain, F. C.;
Ayers, J. E.

Publication type:

Article

Detectivity Studies of SMD-Packaged ZnSSe and ZnMgS UV Detectors.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1322, doi. 10.1007/s11664-006-0262-2

By:

Mak, L. S.;
Chan, S. K.;
Wong, G. K. L.;
Sou, I. K.

Publication type:

Article

Effect of Annealing on the Morphology and Optoelectrical Characteristics of ZnO Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1316, doi. 10.1007/s11664-006-0261-3

By:

Lee, W. C. T.;
Henseler, M.;
Miller, P.;
Swartz, C. H.;
Myers, T. H.;
Reeves, R. J.;
Durbin, S. M.

Publication type:

Article

SiCl4-Based Reactive Ion Etching of ZnO and MgxZn1-xO Films on r-Sapphire Substrates.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1311, doi. 10.1007/s11664-006-0260-4

By:

Zhu, J.;
Saraf, G.;
Zhong, J.;
Sheng, H. F.;
Yakshinskiy, B. V.;
Lu, Y.

Publication type:

Article

Hybrid Deposition of Piezoelectric (112̄0) MgxZn1-xO (0 ≤ x ≤ 0.3) on (011̄2) R-Sapphire Substrates Using RF Sputtering and MOCVD.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1306, doi. 10.1007/s11664-006-0259-x

By:

Saraf, Gaurav;
Ying Chen;
Siegrist, Theo;
Wielunski, Leszek S.;
Yicheng Lu

Publication type:

Article

Progress in ZnO Materials and Devices.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1299, doi. 10.1007/s11664-006-0258-y

By:

Look, David C.

Publication type:

Article

Anisotropy in Selective Metalorganic Vapor Phase Epitaxy of CdTe on GaAs and Si Substrates.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1293, doi. 10.1007/s11664-006-0257-z

By:

Bhat, Ishwara;
Zhang, Ruichao

Publication type:

Article

CdZnTe Graded Buffer Layers for HgCdTe/Si Integration.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1287, doi. 10.1007/s11664-006-0256-0

By:

Groenert, M. E.;
Markunas, J. K.

Publication type:

Article

High-Quality Large-Area MBE HgCdTe/Si.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1283, doi. 10.1007/s11664-006-0255-1

By:

Peterson, J. M.;
Franklin, J. A;
Reddy, M.;
Johnson, S. M.;
Smith, E.;
Radford, W. A.;
Kasai, I.

Publication type:

Article

Current Status of Large-Area MOVPE Growth of HgCdTe Device Heterostructures for Infrared Focal Plane Arrays.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1275, doi. 10.1007/s11664-006-0254-2

By:

Maxey, C. D.;
Fitzmaurice, J. C.;
Lau, H. W.;
Hipwood, L. G.;
Shaw, C. S.;
Jones, C. L.;
Capper, P.

Publication type:

Article

Characterization of Cd1-xZnxTe Crystals Grown from a Modified Vertical Bridgman Technique.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1267, doi. 10.1007/s11664-006-0253-3

By:

Cui, Y.;
Groza, M.;
Wright, G. W.;
Roy, U. N.;
Burger, A.;
Li, L.;
Lu, F.;
Black, M. A.;
James, R. B.

Publication type:

Article

Oxygen-Doped ZnTe Phosphors for Synchrotron X-ray Imaging Detectors.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1262, doi. 10.1007/s11664-006-0252-4

By:

Kang, Z. T.;
Menkara, H.;
Wagner, B. K.;
Summers, C. J.;
Durst, R.;
Diawara, Y.;
Mednikova, G.;
Thorson, T.

Publication type:

Article

Direct Growth of High-Quality Thick CdTe Epilayers on Si (211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1257, doi. 10.1007/s11664-006-0251-5

By:

Niraula, M.;
Yasuda, K.;
Ohnishi, H.;
Takahashi, H.;
Eguchi, K.;
Noda, K.;
Agata, Y.

Publication type:

Article

Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1251, doi. 10.1007/s11664-006-0250-6

By:

Mandal, Krishna C.;
Sung Hoon Kang;
Choi, Michael;
Bello, Job;
Zheng, Lili;
Hui Zhang;
Groza, Michael;
Roy, Utpal N.;
Burger, Arnold;
Jellison, Gerald E.;
Holcomb, David E.;
Wright, Gomez W.;
Williams, Joseph A.

Publication type:

Article

Molecular Beam Epitaxy-Grown ZnSe Nanowires.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1246, doi. 10.1007/s11664-006-0249-z

By:

Chan, S. K.;
Liu, N.;
Cai, Y.;
Wang, N.;
Wong, G. K. L.;
Sou, I. K.

Publication type:

Article

Interface Properties of ZnO Nanotips Grown on Si Substrates.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1241, doi. 10.1007/s11664-006-0248-0

By:

Chen, H.;
Zhong, J.;
Saraf, G.;
Lu, Y.;
Hill, D. H.;
Hsu, S. T.;
Ono, Y.

Publication type:

Article

Spin-Coated ZnO Thin Films Using ZnO Nano-Colloid.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1237, doi. 10.1007/s11664-006-0247-1

By:

Sharma, Swati;
Tran, Alex;
Nalamasu, Omkaram;
Dutta, P. S.

Publication type:

Article

Molecular Beam Epitaxy Growth of HgCdTe on Ge for Third-Generation Infrared Detectors.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1231, doi. 10.1007/s11664-006-0246-2

By:

Zanatta, J. P.;
Badano, G.;
Ballet, P.;
Largeron, C.;
Baylet, J.;
Gravrand, O.;
Rothman, J.;
Castlelein, P.;
Chamonal, J. P.;
Million, A.;
Destefanis, G.;
Mibord, S.;
Brochier, E.;
Costa, P.

Publication type:

Article

The Role of Lattice Mismatch in the Deposition of CdTe Thin Films.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1224, doi. 10.1007/s11664-006-0245-3

By:

Neretina, S.;
Zhang, Q.;
Hughes, R. A.;
Britten, J. F.;
Sochinskii, N. V.;
Preston, J. S.;
Mascher, P.

Publication type:

Article

Epitaxial Growth of CdTe on Si through Perovskite Oxide Buffers.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1219, doi. 10.1007/s11664-006-0244-4

By:

Campo, Eva M.;
Nakahara, Shohei;
Hierl, Thomas;
Hwang, James C. M.;
Yuanping Chen;
Brill, Gregory;
Dhar, Nibir K.;
Vaithyanathan, Venu;
Schlom, Darrell G.;
Xu-Ming Fang;
Fastenau, Joel M.

Publication type:

Article

Influence of Substrate Orientation on the Growth of HgCdTe by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1214, doi. 10.1007/s11664-006-0243-5

By:

Almeida, L. A.;
Broenert, M.;
Markunas, J.;
Dinan, J. H.

Publication type:

Article