Works matching IS 03615235 AND DT 2006 AND VI 35 AND IP 6

Results: 60

Effects of a-Si:H Resist Vacuum-Lithography Processing on HgCdTe.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1474, doi. 10.1007/s11664-006-0287-6
By:
- Jacobs, R. N.;
- Robinson, E. W.;
- Jaime-Vasquez, M.;
- Stoltz, A. J.;
- Markunas, J.;
- Almeida, L. A.;
- Boyd, P. R.;
- Dinan, J. H.;
- Salamanca-Riba, L.
Publication type:
Article
Thin Film Transmission Matrix Approach to Fourier Transform Infrared Analysis of HgCdTe Multilayer Heterostructures.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1487
By:
- Lofrreen, D. D.;
- Peterson, C. M.;
- Buell, A. A.;
- Vilela, M. F.;
- Johnson, S. M.
Publication type:
Article
Material Quality Characterization of CdZnTe Substrates for HgCdTe Epitaxy.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1495, doi. 10.1007/s11664-006-0291-x
By:
- Carini, G. A.;
- Arnone, C.;
- Bolotnikov, A. E.;
- Camarda, G. S.;
- De Wames, R.;
- Dinan, J. H.;
- Markunas, J. K.;
- Raghothamachar, B.;
- Sivananthan, S.;
- Smith, R.;
- Zhao, J.;
- Zhong, Z.;
- James, R. B.
Publication type:
Article
Mapping of Zinc Content in Cd1-xZnxTe by Optical Methods.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1491
By:
- Horodyský, P.;
- Franc, J.;
- Grill, R.;
- Hlídek, P.;
- Moravec, P.;
- Bok, J.;
- Höschl, P.
Publication type:
Article
Investigation of HgTe-HgCdTe Superlattices by High-Resolution X-ray Diffraction.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1481, doi. 10.1007/s11664-006-0288-5
By:
- Hatch, S. D.;
- Sewell, R. H.;
- Dell, J. M.;
- Faraone, L.;
- Becker, C. R.;
- Usher, B.
Publication type:
Article
Full-Wafer Spatial Mapping of Macrodefects on HgCdTe Epitaxial Wafers Grown by MBE.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1503, doi. 10.1007/s11664-006-0292-9
By:
- Roth, John A.;
- Nosho, Brett Z.;
- Jensen, John E.
Publication type:
Article
p to n Conversion in SWIR Mercury Cadmium Telluride with Ion Milling.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1470, doi. 10.1007/s11664-006-0286-7
By:
- Chandra, D.;
- Schaake, H. F.;
- Aqariden, F.;
- Teherani, T.;
- Kinch, M. A.;
- Dreiske, P. D.;
- Weirauch, D. F.;
- Shih, H. D.
Publication type:
Article
Hydrogenation of HgCdTe Epilayers on Si Substrates Using Glow Discharge Plasma.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1465, doi. 10.1007/s11664-006-0285-8
By:
- Golding, T. D.;
- Hellmer, R.;
- Bubulac, L.;
- Dinan, J. H.;
- Wang, L.;
- Zhao, W.;
- Carmody, M.;
- Sankur, H. O.;
- Edwall, D.
Publication type:
Article
Examination of the Effects of High-density Plasmas on the Surface of HgCdTe.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1461, doi. 10.1007/s11664-006-0284-9
By:
- Stoltz, A. J.;
- Jaime-Vasquez, M.;
- Benson, J. D.;
- Varesi, J. B.;
- Martinka, M.
Publication type:
Article
In-situ Spectroscopic Study of the As and Te on the Si (112) Surface for High-quality Epitaxial Layers.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1455, doi. 10.1007/s11664-006-0283-x
By:
- Jaime-Vasquez, M.;
- Martinka, M.;
- Jacobs, R. N.;
- Groenert, M.
Publication type:
Article
The Structure of the Si (211) Surface.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1449, doi. 10.1007/s11664-006-0282-y
By:
- Fulk, C.;
- Sivananthan, S.;
- Zavitz, D.;
- Singh, R.;
- Trenary, M.;
- Chen, Y. P.;
- Brill, G.;
- Dhar, N.
Publication type:
Article
Investigation of HgCdTe Surface Films and Their Removal.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1443, doi. 10.1007/s11664-006-0281-z
By:
- Varesi, J. B.;
- Benson, J. D.;
- Jaime-Vasquez, M.;
- Martinka, M.;
- Stoltz, A. J.;
- Dinan, H. H.
Publication type:
Article
Surface Structure of (111)A HgCdTe.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1434, doi. 10.1007/s11664-006-0280-0
By:
- Benson, J. D.;
- Varesi, J. B.;
- Stoltz, A. J.;
- Smith, E. P. G.;
- Johnson, S. M.;
- Jaime-Vasquez, M.;
- Markunas, J. K.;
- Almeida, L. A.;
- Molstad, J. C.
Publication type:
Article
A Comparison of Gamma Radiation Effects on Bromine- and Hydrazine-Treated HgCdTe Photodiodes.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1429, doi. 10.1007/s11664-006-0279-6
By:
- Min Yung Lee;
- Young Ho Kim;
- Nam Ho Lee;
- Yong Soo Lee;
- Hee Chul Lee
Publication type:
Article
Modeling of Optical Response in Graded Absorber Layer Detectors.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1423, doi. 10.1007/s11664-006-0278-7
By:
- Lee, Donald L.
Publication type:
Article
LWIR HgCdTe on Si Detector Performance and Analysis.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1417, doi. 10.1007/s11664-006-0277-8
By:
- Carmody, M.;
- Pasko, J. G.;
- Edwall, D.;
- Bailey, R.;
- Arias, J.;
- Groenert, M.;
- Almeida, L. A.;
- Dinan, J. H.;
- Chen, Y.;
- Brill, G.;
- Dhar, N. K.
Publication type:
Article
Thermal Cycling-Induced Changes in Excess Dark Current in Very Long-Wavelength HgCdTe Photodiodes at Low Temperature.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1411, doi. 10.1007/s11664-006-0276-9
By:
- Tobin, Stephen P.
Publication type:
Article
VLWIR HgCdTe Detector Current-Voltage Analysis.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1403, doi. 10.1007/s11664-006-0275-x
By:
- Gilmore, Angelo Scotty;
- Bangs, James;
- Gerrish, Amanda
Publication type:
Article
Tunneling in Long-Wavelength Infrared HgCdTe Photodiodes.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1399, doi. 10.1007/s11664-006-0274-y
By:
- Krishnamurthy, S.;
- Berding, M. A.;
- Robinson, H.;
- Sher, A.
Publication type:
Article
HgCdTe Negative Luminescence Devices for Cold Shielding and Other Applications.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1391, doi. 10.1007/s11664-006-0273-z
By:
- Lindle, J. R.;
- Bewley, W. W.;
- Vurgaftman, I.;
- Meyer, J. R.;
- Johnson, J. L.;
- Thomas, M. L.;
- Piquette, E. C.;
- Tennant, W. E.;
- Smith, E. P.;
- Johnson, S. M.
Publication type:
Article
Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetimes in Long-Wavelength Infrared HgCdTe on Si.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1385, doi. 10.1007/s11664-006-0272-0
By:
- Boieriu, P.;
- Grein, C. H.;
- Garland, J.;
- Velicu, S.;
- Fulk, C.;
- Stoltz, A.;
- Bubulac, L.;
- Dinan, J. H.;
- Sivananthan, S.
Publication type:
Article
Passivation Effect on Optical and Electrical Properties of Molecular Beam Epitaxy-Grown HgCdTe/CdTe/Si Layers.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1379, doi. 10.1007/s11664-006-0271-1
By:
- Kiran, Rajni;
- Mallick, Shubhrangshu;
- Suk-Ryong Hahn;
- Lee, T. S.;
- Sivananthan, Sivalingam;
- Ghosh, Siddhartha;
- Wijewarnasuriya, P. S.
Publication type:
Article
Minority Carrier Lifetimes in HgCdTe Alloys.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1369, doi. 10.1007/s11664-006-0270-2
By:
- Krishnamurthy, S.;
- Berding, M. A.;
- Yu, Z. G.
Publication type:
Article
Accurate Measurement of Composition, Carrier Concentration, and Photoconductive Lifetime in Hg1-xCdx Te Grown by Molecular Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1360, doi. 10.1007/s11664-006-0269-8
By:
- Swartz, C. H.;
- Chandril, S.;
- Tompkins, R. P.;
- Giles, N. C.;
- Myers, T. H.;
- Edwall, D. D.;
- Piquette, E. C.;
- Kim, C. S.;
- Vurgaftman, I.;
- Meyer, J. R.
Publication type:
Article
The Nature of Point Defects in CdTe.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1354, doi. 10.1007/s11664-006-0268-9
By:
- Fochuk, P.;
- Grill, R.;
- Panchuk, O.
Publication type:
Article
Internal Drift Effects on the Diffusion of Ag in CdTe.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1350, doi. 10.1007/s11664-006-0267-x
By:
- Wolf, H.;
- Wagner, F.;
- Wichert, Th.;
- Grill, R.;
- Belas, E.
Publication type:
Article
Precise Arsenic Doping of HgCdTe by MBE and Effects on Compositional Interdiffusion.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1346, doi. 10.1007/s11664-006-0266-y
By:
- Piquette, E. C.;
- Edwall, D. D.;
- Lee, D. L.;
- Arias, J. M.
Publication type:
Article
p-Type HgTe/CdTe Superlattices for Very-Long Wavelength Infrared Detectors.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1341, doi. 10.1007/s11664-006-0265-z
By:
- Jung, H. S.;
- Boieriu, P.;
- Grein, C. H.
Publication type:
Article
Study of Defect Levels in CdTe Using Thermoelectric Effect Spectroscopy.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1333, doi. 10.1007/s11664-006-0264-0
By:
- Soundararajan, Raji;
- Lynn, Kelvin G.;
- Awadallah, Salah;
- Szeles, Csaba;
- Su-Huai Wei
Publication type:
Article
Anisotropy in Selective Metalorganic Vapor Phase Epitaxy of CdTe on GaAs and Si Substrates.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1293, doi. 10.1007/s11664-006-0257-z
By:
- Bhat, Ishwara;
- Zhang, Ruichao
Publication type:
Article
CdZnTe Graded Buffer Layers for HgCdTe/Si Integration.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1287, doi. 10.1007/s11664-006-0256-0
By:
- Groenert, M. E.;
- Markunas, J. K.
Publication type:
Article
Elastic Strains in Heteroepitaxial ZnSe1-xTex on InGaAs/InP (001).
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1327, doi. 10.1007/s11664-006-0263-1
By:
- Yarlagadda, B.;
- Rodriguez, A.;
- Li, P.;
- Miller, B. I.;
- Jain, F. C.;
- Ayers, J. E.
Publication type:
Article
Effect of Annealing on the Morphology and Optoelectrical Characteristics of ZnO Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1316, doi. 10.1007/s11664-006-0261-3
By:
- Lee, W. C. T.;
- Henseler, M.;
- Miller, P.;
- Swartz, C. H.;
- Myers, T. H.;
- Reeves, R. J.;
- Durbin, S. M.
Publication type:
Article
Hybrid Deposition of Piezoelectric (112̄0) MgxZn1-xO (0 ≤ x ≤ 0.3) on (011̄2) R-Sapphire Substrates Using RF Sputtering and MOCVD.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1306, doi. 10.1007/s11664-006-0259-x
By:
- Saraf, Gaurav;
- Ying Chen;
- Siegrist, Theo;
- Wielunski, Leszek S.;
- Yicheng Lu
Publication type:
Article
Progress in ZnO Materials and Devices.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1299, doi. 10.1007/s11664-006-0258-y
By:
- Look, David C.
Publication type:
Article
Detectivity Studies of SMD-Packaged ZnSSe and ZnMgS UV Detectors.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1322, doi. 10.1007/s11664-006-0262-2
By:
- Mak, L. S.;
- Chan, S. K.;
- Wong, G. K. L.;
- Sou, I. K.
Publication type:
Article
High-Quality Large-Area MBE HgCdTe/Si.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1283, doi. 10.1007/s11664-006-0255-1
By:
- Peterson, J. M.;
- Franklin, J. A;
- Reddy, M.;
- Johnson, S. M.;
- Smith, E.;
- Radford, W. A.;
- Kasai, I.
Publication type:
Article
SiCl4-Based Reactive Ion Etching of ZnO and MgxZn1-xO Films on r-Sapphire Substrates.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1311, doi. 10.1007/s11664-006-0260-4
By:
- Zhu, J.;
- Saraf, G.;
- Zhong, J.;
- Sheng, H. F.;
- Yakshinskiy, B. V.;
- Lu, Y.
Publication type:
Article
Current Status of Large-Area MOVPE Growth of HgCdTe Device Heterostructures for Infrared Focal Plane Arrays.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1275, doi. 10.1007/s11664-006-0254-2
By:
- Maxey, C. D.;
- Fitzmaurice, J. C.;
- Lau, H. W.;
- Hipwood, L. G.;
- Shaw, C. S.;
- Jones, C. L.;
- Capper, P.
Publication type:
Article
Characterization of Cd1-xZnxTe Crystals Grown from a Modified Vertical Bridgman Technique.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1267, doi. 10.1007/s11664-006-0253-3
By:
- Cui, Y.;
- Groza, M.;
- Wright, G. W.;
- Roy, U. N.;
- Burger, A.;
- Li, L.;
- Lu, F.;
- Black, M. A.;
- James, R. B.
Publication type:
Article
Oxygen-Doped ZnTe Phosphors for Synchrotron X-ray Imaging Detectors.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1262, doi. 10.1007/s11664-006-0252-4
By:
- Kang, Z. T.;
- Menkara, H.;
- Wagner, B. K.;
- Summers, C. J.;
- Durst, R.;
- Diawara, Y.;
- Mednikova, G.;
- Thorson, T.
Publication type:
Article
Direct Growth of High-Quality Thick CdTe Epilayers on Si (211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1257, doi. 10.1007/s11664-006-0251-5
By:
- Niraula, M.;
- Yasuda, K.;
- Ohnishi, H.;
- Takahashi, H.;
- Eguchi, K.;
- Noda, K.;
- Agata, Y.
Publication type:
Article
Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1251, doi. 10.1007/s11664-006-0250-6
By:
- Mandal, Krishna C.;
- Sung Hoon Kang;
- Choi, Michael;
- Bello, Job;
- Zheng, Lili;
- Hui Zhang;
- Groza, Michael;
- Roy, Utpal N.;
- Burger, Arnold;
- Jellison, Gerald E.;
- Holcomb, David E.;
- Wright, Gomez W.;
- Williams, Joseph A.
Publication type:
Article
Molecular Beam Epitaxy-Grown ZnSe Nanowires.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1246, doi. 10.1007/s11664-006-0249-z
By:
- Chan, S. K.;
- Liu, N.;
- Cai, Y.;
- Wang, N.;
- Wong, G. K. L.;
- Sou, I. K.
Publication type:
Article
Interface Properties of ZnO Nanotips Grown on Si Substrates.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1241, doi. 10.1007/s11664-006-0248-0
By:
- Chen, H.;
- Zhong, J.;
- Saraf, G.;
- Lu, Y.;
- Hill, D. H.;
- Hsu, S. T.;
- Ono, Y.
Publication type:
Article
Spin-Coated ZnO Thin Films Using ZnO Nano-Colloid.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1237, doi. 10.1007/s11664-006-0247-1
By:
- Sharma, Swati;
- Tran, Alex;
- Nalamasu, Omkaram;
- Dutta, P. S.
Publication type:
Article
Molecular Beam Epitaxy Growth of HgCdTe on Ge for Third-Generation Infrared Detectors.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1231, doi. 10.1007/s11664-006-0246-2
By:
- Zanatta, J. P.;
- Badano, G.;
- Ballet, P.;
- Largeron, C.;
- Baylet, J.;
- Gravrand, O.;
- Rothman, J.;
- Castlelein, P.;
- Chamonal, J. P.;
- Million, A.;
- Destefanis, G.;
- Mibord, S.;
- Brochier, E.;
- Costa, P.
Publication type:
Article
The Role of Lattice Mismatch in the Deposition of CdTe Thin Films.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1224, doi. 10.1007/s11664-006-0245-3
By:
- Neretina, S.;
- Zhang, Q.;
- Hughes, R. A.;
- Britten, J. F.;
- Sochinskii, N. V.;
- Preston, J. S.;
- Mascher, P.
Publication type:
Article
Epitaxial Growth of CdTe on Si through Perovskite Oxide Buffers.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1219, doi. 10.1007/s11664-006-0244-4
By:
- Campo, Eva M.;
- Nakahara, Shohei;
- Hierl, Thomas;
- Hwang, James C. M.;
- Yuanping Chen;
- Brill, Gregory;
- Dhar, Nibir K.;
- Vaithyanathan, Venu;
- Schlom, Darrell G.;
- Xu-Ming Fang;
- Fastenau, Joel M.
Publication type:
Article
Influence of Substrate Orientation on the Growth of HgCdTe by Molecular Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1214, doi. 10.1007/s11664-006-0243-5
By:
- Almeida, L. A.;
- Broenert, M.;
- Markunas, J.;
- Dinan, J. H.
Publication type:
Article