Works matching IS 03615235 AND DT 2006 AND VI 35 AND IP 4

Results: 49

Evolution of ZnO Nanostructures on Silicon Substrate by Vapor--Solid Mechanism: Structural and Optical Properties.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 758, doi. 10.1007/s11664-006-0135-8
By:
- Umar, A.;
- Im, Y. H.;
- Hahn, Y. B.
Publication type:
Article
Optimized Doping and Contact Scheme for Low-Voltage 275-nm Deep Ultraviolet LEDs.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 750, doi. 10.1007/s11664-006-0133-x
By:
- Moe, Craig G.;
- Schmidt, Mathew C.;
- Masui, Hisashi;
- Chakraborty, Arpan;
- Vampola, Kenneth;
- Newman, Scott;
- Moran, Brendan;
- Likun Shen;
- Mates, Tom;
- Keller, Stacia;
- Denbaars, Steven P.;
- Emerson, David
Publication type:
Article
GaN/AlN Multiple Quantum Wells Grown on GaN-AlN Waveguide Structure by Metalorganic Vapor-Phase Epitaxy.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 744, doi. 10.1007/s11664-006-0132-y
By:
- Kumtornkittikul, Chaiyasit;
- Sugiyama, Masakazu;
- Nakano, Yoshiaki
Publication type:
Article
Metalorganic Chemical Vapor Deposition Growth and Characterization of InGaP/GaAs Superlattices.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 705, doi. 10.1007/s11664-006-0125-x
By:
- Zhang, X. B.;
- Ryou, J. H.;
- Dupuis, R. D.;
- Walter, G.;
- Holonyak Jr., N.
Publication type:
Article
Characterization of Ti Schottky Diodes on Epi-Regrown 4H-SiC.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 754, doi. 10.1007/s11664-006-0134-9
By:
- Lin Zhu;
- Canhua Li;
- Chow, T. Paul;
- Bhat, Ishwara B.;
- Jones, Kenneth A.;
- Scozzie, C.;
- Agarwal, Anant
Publication type:
Article
Selective Growth and Directed Integration of ZnO Nanobridge Devices on Si Substrates without a Metal Catalyst Using a ZnO Seed Layer.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 795, doi. 10.1007/s11664-006-0139-4
By:
- Conley Jr., John F.;
- Stecker, Lisa;
- Ono, Yoshi
Publication type:
Article
Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 777, doi. 10.1007/s11664-006-0138-5
By:
- Hullavarad, S. S.;
- Vispute, R. D.;
- Nagaraj, B.;
- Kulkarni, V. N.;
- Dhar, S.;
- Venkatesan, T.;
- Jones, K. A.;
- Derenge, M.;
- Zheleva, T.;
- Ervin, M. H.;
- Lelis, A.;
- Scozzie, C. J.;
- Habersat, D.;
- Wickenden, A. E.;
- Currano, L. J.;
- Dubey, M.
Publication type:
Article
Digital Etching of III-N Materials Using a Two-Step Ar/KOH Technique.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 771, doi. 10.1007/s11664-006-0137-6
By:
- Keogh, David;
- Asbeck, Peter;
- Chung, Theodore;
- Dupuis, Russell D.;
- Feng, Milton
Publication type:
Article
Metalorganic Chemical Vapor Deposition and Characterization of ZnO Materials.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 766, doi. 10.1007/s11664-006-0136-7
By:
- Shangzu Sun;
- Tompa, Gary S.;
- Hoerman, Brent;
- Look, David C.;
- Claflin, Bruce B.;
- Rice, Catherine E.;
- Masaun, Puneet
Publication type:
Article
Electrical Transport Properties of Single GaN and InN Nanowires.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 738, doi. 10.1007/s11664-006-0131-z
By:
- Chih-Yang Chang;
- Gou-Chung Chi;
- Wei-Ming Wang;
- Li-Chyong Chen;
- Kuei-Hsien Chen;
- Ren, F.;
- Pearton, S. J.
Publication type:
Article
Comparison of MOS Capacitors on n- and p-Type GaN.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 726, doi. 10.1007/s11664-006-0129-6
By:
- Huang, W.;
- Khan, T.;
- Chow, T. Paul
Publication type:
Article
High-Temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 722, doi. 10.1007/s11664-006-0128-7
By:
- Tao, Y. Q.;
- Chen, D. J.;
- Kong, Y. C.;
- Shen, B.;
- Xie, Z. L.;
- Han, P.;
- Zhang, R.;
- Zheng, Y. D.
Publication type:
Article
Photoluminescence Properties of GaN with Dislocations Induced by Plastic Deformation.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 717, doi. 10.1007/s11664-006-0127-8
By:
- Yonenaga, Ichiro;
- Makino, Hisao;
- Itoh, Shun;
- Goto, Takenari;
- Yao, Takafumi
Publication type:
Article
Optoelectronic Properties of Expanding Thermal Plasma Deposited Textured Zinc Oxide: Effect of Aluminum Doping.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 711, doi. 10.1007/s11664-006-0126-9
By:
- Groenen, R.;
- Kieft, E. R.;
- Linden, J. L.;
- Van De Sanden, M. C. M.
Publication type:
Article
Band Offsets Analysis of Dilute Nitride Single Quantum Well Structures Employing Surface Photo Voltage Measurements.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 733, doi. 10.1007/s11664-006-0130-0
By:
- Galluppi, Massimo;
- Geelhaar, Lutz;
- Riechert, Henning
Publication type:
Article
Effect of Thin Strain-Compensated Al0.6Ga0.4P Layers on the Growth of Multiple-Stacked InP/In0.5Al0.3Ga0.2P Quantum Dots.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 701, doi. 10.1007/s11664-006-0124-y
By:
- Zhang, X. B.;
- Ryou, J. H.;
- Dupuis, R. D.;
- He, L.;
- Hull, R.;
- Walter, G.;
- Holonyak Jr., N.
Publication type:
Article
Growth of InGaN HBTs by MOCVD.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 695, doi. 10.1007/s11664-006-0123-z
By:
- Chung, Theodore;
- Limb, Jae;
- Jae-Hyun Ryou;
- Wonseok Lee;
- Peng Li;
- Dongwon Yoo;
- Xue-Bing Zhang;
- Shyh-Chiang Shen;
- Dupuis, Russell D.;
- Keogh, David;
- Asbeck, Peter;
- Chukung, Ben;
- Feng, Milton;
- Zakharov, Dimitri;
- Lilienthal-Weber, Zusanne
Publication type:
Article
Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 685, doi. 10.1007/s11664-006-0121-1
By:
- Soohwan Jang;
- Ren, F.;
- Pearton, S. J.;
- Gila, B. P.;
- Hlad, M.;
- Abernathy, C. R.;
- Hyucksoo Yang;
- Pan, C. J.;
- Jenn-Inn Chyi;
- Bove, P.;
- Lahreche, H.;
- Thuret, J.
Publication type:
Article
ZnO Growth on Si with Low-Temperature CdO and ZnO Buffer Layers by Molecular-Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 691, doi. 10.1007/s11664-006-0122-0
By:
- Xiu, F. X.;
- Yang, Z.;
- Zhao, D. T.;
- Liu, J. L.;
- Alim, K. A.;
- Balandin, A. A.;
- Itkis, M. E.;
- Haddon, R. C.
Publication type:
Article
Selective Dry Etching of (Sc2O3)x(Ga2O3)1-x Gate Dielectrics and Surface Passivation Films on GaN.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 680, doi. 10.1007/s11664-006-0120-2
By:
- Hlad, M.;
- Voss, L.;
- Gila, B. P.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Ren, F.
Publication type:
Article
Comparison of Laser-Wavelength Operation for Drilling of Via Holes in AlGaN/GaN HEMTs on SiC Substrates.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 675, doi. 10.1007/s11664-006-0119-8
By:
- Anderson, T. J.;
- Ren, F.;
- Covert, L.;
- Lin, J.;
- Pearton, S. J.;
- Dalrymple, T. W.;
- Bozada, C.;
- Fitch, R. C.;
- Moser, N.;
- Bedford, R. G.;
- Schimpf, M.
Publication type:
Article
High-Yield GaN Nanowire Synthesis and Field-Effect Transistor Fabrication.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 670, doi. 10.1007/s11664-006-0118-9
By:
- Huaqiang Wu;
- Ho-Young Cha;
- Chandrashekhar, M.;
- Spencer, Michael G.;
- Koley, Goutam
Publication type:
Article
Electrical Properties of Undoped Bulk ZnO Substrates.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 663, doi. 10.1007/s11664-006-0117-x
By:
- Polyakov, A. Y.;
- Smirnov, N. B.;
- Govorkov, A. V.;
- Kozhukhova, E. A.;
- Pearton, S. J.;
- Norton, D. P.;
- Osinsky, A.;
- Dabiran, Amir
Publication type:
Article
Annealing Temperature Dependence of TiB2 Schottky Barrier Contacts on n-GaN.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 658, doi. 10.1007/s11664-006-0116-y
By:
- Khanna, Rohit;
- Pearton, S. J.;
- Ren, F.;
- Kravchenko, I.
Publication type:
Article
Investigation of GaNxP1-x/GaP LED Structure Optical Properties.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 654, doi. 10.1007/s11664-006-0115-z
By:
- Peternai, L.;
- Kovac, J.;
- Jakabovic, J.;
- Gottschalch, V.;
- Rheinlaender, B.
Publication type:
Article
Electrical and Optical Characterization Studies of Lower Dose Si-Implanted AlxGa1-xN.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 647, doi. 10.1007/s11664-006-0114-0
By:
- Mee-Yi Ryu;
- Yeo, Y. K.;
- Marciniak, M. A.;
- Zens, T. W.;
- Moore, E. A.;
- Hengehold, R. L.;
- Steiner, T. D.
Publication type:
Article
Growth of AlGaN Alloys Exhibiting Enhanced Luminescence Efficiency.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 641, doi. 10.1007/s11664-006-0113-1
By:
- Sampath, A. V.;
- Garrett, G. A.;
- Collins, C. J.;
- Sarney, W. L.;
- Readinger, E. D.;
- Newman, P. G.;
- Shen, H.;
- Wraback, M.
Publication type:
Article
Room-Temperature Ferromagnetic Ordering in Mn-Doped ZnO Thin Films Grown by Pulsed Laser Deposition.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 635, doi. 10.1007/s11664-006-0112-2
By:
- Shim, W. Y.;
- Jeon, K. A.;
- Lee, K. I.;
- Lee, S. Y.;
- Jung, M. H.;
- Lee, W. Y.
Publication type:
Article
Relationship between Infrared Photoluminescence and Resistivity in Semi-Insulating 6H-SiC.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 630, doi. 10.1007/s11664-006-0111-3
By:
- Chanda, S. K.;
- Koshka, Y.;
- Yoganathan, M.
Publication type:
Article
Extraction of SiO2/SiC Interface Trap Profile in 4H- and 6H-SiC Metal-Oxide Semiconductor Field-Effect Transistors from Subthreshold Characteristics at 25°C and 150°C.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 618, doi. 10.1007/s11664-006-0109-x
By:
- Yanqing Deng;
- Wei Wang;
- Qizhi Fang;
- Koushik, Mahalingam B.;
- Chow, T. Paul
Publication type:
Article
Effect of High-Temperature Processing on the Creation of Boron-Related Deep Levels in 4H-SiC.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 625, doi. 10.1007/s11664-006-0110-4
By:
- Das, Hrishikesh;
- Koshka, Yaroslav;
- Mazzola, Michael S.;
- Sunkari, Swapna G.;
- Wyatt, J. L.
Publication type:
Article
Giant Traps on the Surface of Hydride Vapor Phase Epitaxy--Grown Free-Standing GaN.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 613, doi. 10.1007/s11664-006-0108-y
By:
- Fang, Z.-Q.;
- Look, D. C.;
- Krtschil, A.;
- Krost, A.;
- Khan, F. A.;
- Adesida, I.
Publication type:
Article
Catalyst-Free Growth of GaN Nanowires.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 576, doi. 10.1007/s11664-006-0102-4
By:
- Bertness, K. A.;
- Sanford, N. A.;
- Barker, J. M.;
- Schlager, J. B.;
- Roshko, A.;
- Davydov, A. V.;
- Levin, I.
Publication type:
Article
Calculations and Measurements of Contact Resistance of Semi-Transparent Ni/Pd Contacts to p-GaN.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 605, doi. 10.1007/s11664-006-0107-z
By:
- Bogart, Katherine H. A.;
- Crofton, John
Publication type:
Article
Flat GaN Epitaxial Layers Grown on Si(111) by Metalorganic Vapor Phase Epitaxy Using Step-Graded AlGaN Intermediate Layers.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 592, doi. 10.1007/s11664-006-0105-1
By:
- Kai Cheng;
- Leys, M.;
- Degroote, S.;
- Van Daele, B.;
- Boeykens, S.;
- Derluyn, J.;
- Germain, M.;
- Van Tendeloo, G.;
- Engelen, J.;
- Borghs, G.
Publication type:
Article
Influence of Growth Temperature and Growth Rate of p-GaN Layers on the Characteristics of Green Light Emitting Diodes.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 587, doi. 10.1007/s11664-006-0104-2
By:
- Wonseok Lee;
- Jae Limb;
- Jae-Hyun Ryou;
- Dongwon Yoo;
- Chung, Theodore;
- Dupuis, Russell D.
Publication type:
Article
Schottky Barrier Formation at Nonpolar Au/GaN Epilayer Interfaces.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 581, doi. 10.1007/s11664-006-0103-3
By:
- Walker Jr., D. E.;
- Gao, M.;
- Chen, X.;
- Schaff, W. J.;
- Brillson, L. J.
Publication type:
Article
Anisotropy in the Quantum Lifetime in AlGaN/GaN Heterostructures.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 599, doi. 10.1007/s11664-006-0106-0
By:
- Elhamri, S.;
- Mitchel, W. C.;
- Mitchell, W. D.;
- Berney, R.;
- Landis, G. R.
Publication type:
Article
Gate Control, Surface Leakage Currents, and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 568, doi. 10.1007/s11664-006-0101-5
By:
- Kasai, S.;
- Kotani, J.;
- Hashizume, T.;
- Hasegawa, H.
Publication type:
Article
Influence of Growth Conditions and Surface Reaction Byproducts on GaN Grown via Metal Organic Molecular Beam Epitaxy: Toward an Understanding of Surface Reaction Chemistry.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 562, doi. 10.1007/s11664-006-0100-6
By:
- Pritchett, David;
- Henderson, Walter;
- Burnham, Shawn D.;
- Doolittle, W. Alan
Publication type:
Article
Valency Configuration of Transition Metal Impurities in ZnO.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 556, doi. 10.1007/s11664-006-0099-8
By:
- Petit, L.;
- Schulthess, T. C.;
- Svane, A.;
- Temmerman, W. M.;
- Szotek, Z.;
- Janotti, A.
Publication type:
Article
Thermal Conductivity of Bulk ZnO after Different Thermal Treatments.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 550
By:
- Özgür, Ü;
- Gu, X.;
- Chevtchenko, S.;
- Spradlin, J.;
- Cho, S.-J.;
- Morkoç, H.;
- Pollak, F. H.;
- Everitt, H. O.;
- Nemeth, B.;
- Nause, J. E.
Publication type:
Article
Trap-Related Photoconductivity in ZnO Epilayers.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 543, doi. 10.1007/s11664-006-0097-x
By:
- Murphy, T. E.;
- Moazzami, K.;
- Phillips, J. D.
Publication type:
Article
Polarization, Piezoelectric Constants, and Elastic Constants of ZnO, MgO, and CdO.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 538, doi. 10.1007/s11664-006-0096-y
By:
- Gopal, Priya;
- Spaldin, Nicola A.
Publication type:
Article
Free Carrier Absorption and Lattice Vibrational Modes in Bulk ZnO.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 525, doi. 10.1007/s11664-006-0094-0
By:
- Emelie, P. Y.;
- Phillips, J. D.;
- Buller, B.;
- Venkateswaran, U. D.
Publication type:
Article
Effect of Annealing on Electrical Properties of Radio-Frequency-Sputtered ZnO Films.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 520, doi. 10.1007/s11664-006-0093-1
By:
- Alivov, Y. I.;
- Bo, X.;
- Akarca-Biyikli, S.;
- Fan, Q.;
- Xie, J.;
- Biyikli, N.;
- Zhu, K.;
- Johnstone, D.;
- Morkoç, H.
Publication type:
Article
Selective and Nonselective Wet Etching of Zn0.9Mg0.1O/ZnO.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 516, doi. 10.1007/s11664-006-0092-2
By:
- Jau-Jiun Chen;
- Soohwan Jang;
- Ren, F.;
- Yuanjie Li;
- Hyun-Sik Kim;
- Norton, D. P.;
- Pearton, S. J.;
- Osinsky, A.;
- Chu, S. N . G.;
- Weaver, J. F.
Publication type:
Article
Synthesis and Characterization of Phosphorus-Doped ZnO and (Zn,Mg)O Thin Films via Pulsed Laser Deposition.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 530, doi. 10.1007/s11664-006-0095-z
By:
- Li, Y. J.;
- Heo, Y. W.;
- Erie, J. M.;
- Kim, H.;
- Ip, K.;
- Pearton, S. J.;
- Norton, D. P.
Publication type:
Article
Electrical Properties of ZnO Nano-Particles Embedded in Polyimide.
Published in:
Journal of Electronic Materials, 2006, v. 35, n. 4, p. 512, doi. 10.1007/s11664-006-0091-3
By:
- Kim, E. K.;
- Kim, J. H.;
- Noh, H. K.;
- Kim, Y. H.
Publication type:
Article