Works matching IS 03615235 AND DT 2006 AND VI 35 AND IP 4

Results: 49

Selective Growth and Directed Integration of ZnO Nanobridge Devices on Si Substrates without a Metal Catalyst Using a ZnO Seed Layer.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 795, doi. 10.1007/s11664-006-0139-4

By:

Conley Jr., John F.;
Stecker, Lisa;
Ono, Yoshi

Publication type:

Article

Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 777, doi. 10.1007/s11664-006-0138-5

By:

Hullavarad, S. S.;
Vispute, R. D.;
Nagaraj, B.;
Kulkarni, V. N.;
Dhar, S.;
Venkatesan, T.;
Jones, K. A.;
Derenge, M.;
Zheleva, T.;
Ervin, M. H.;
Lelis, A.;
Scozzie, C. J.;
Habersat, D.;
Wickenden, A. E.;
Currano, L. J.;
Dubey, M.

Publication type:

Article

Digital Etching of III-N Materials Using a Two-Step Ar/KOH Technique.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 771, doi. 10.1007/s11664-006-0137-6

By:

Keogh, David;
Asbeck, Peter;
Chung, Theodore;
Dupuis, Russell D.;
Feng, Milton

Publication type:

Article

Metalorganic Chemical Vapor Deposition and Characterization of ZnO Materials.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 766, doi. 10.1007/s11664-006-0136-7

By:

Shangzu Sun;
Tompa, Gary S.;
Hoerman, Brent;
Look, David C.;
Claflin, Bruce B.;
Rice, Catherine E.;
Masaun, Puneet

Publication type:

Article

Evolution of ZnO Nanostructures on Silicon Substrate by Vapor--Solid Mechanism: Structural and Optical Properties.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 758, doi. 10.1007/s11664-006-0135-8

By:

Umar, A.;
Im, Y. H.;
Hahn, Y. B.

Publication type:

Article

Characterization of Ti Schottky Diodes on Epi-Regrown 4H-SiC.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 754, doi. 10.1007/s11664-006-0134-9

By:

Lin Zhu;
Canhua Li;
Chow, T. Paul;
Bhat, Ishwara B.;
Jones, Kenneth A.;
Scozzie, C.;
Agarwal, Anant

Publication type:

Article

Optimized Doping and Contact Scheme for Low-Voltage 275-nm Deep Ultraviolet LEDs.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 750, doi. 10.1007/s11664-006-0133-x

By:

Moe, Craig G.;
Schmidt, Mathew C.;
Masui, Hisashi;
Chakraborty, Arpan;
Vampola, Kenneth;
Newman, Scott;
Moran, Brendan;
Likun Shen;
Mates, Tom;
Keller, Stacia;
Denbaars, Steven P.;
Emerson, David

Publication type:

Article

GaN/AlN Multiple Quantum Wells Grown on GaN-AlN Waveguide Structure by Metalorganic Vapor-Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 744, doi. 10.1007/s11664-006-0132-y

By:

Kumtornkittikul, Chaiyasit;
Sugiyama, Masakazu;
Nakano, Yoshiaki

Publication type:

Article

Electrical Transport Properties of Single GaN and InN Nanowires.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 738, doi. 10.1007/s11664-006-0131-z

By:

Chih-Yang Chang;
Gou-Chung Chi;
Wei-Ming Wang;
Li-Chyong Chen;
Kuei-Hsien Chen;
Ren, F.;
Pearton, S. J.

Publication type:

Article

Band Offsets Analysis of Dilute Nitride Single Quantum Well Structures Employing Surface Photo Voltage Measurements.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 733, doi. 10.1007/s11664-006-0130-0

By:

Galluppi, Massimo;
Geelhaar, Lutz;
Riechert, Henning

Publication type:

Article

Comparison of MOS Capacitors on n- and p-Type GaN.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 726, doi. 10.1007/s11664-006-0129-6

By:

Huang, W.;
Khan, T.;
Chow, T. Paul

Publication type:

Article

High-Temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 722, doi. 10.1007/s11664-006-0128-7

By:

Tao, Y. Q.;
Chen, D. J.;
Kong, Y. C.;
Shen, B.;
Xie, Z. L.;
Han, P.;
Zhang, R.;
Zheng, Y. D.

Publication type:

Article

Photoluminescence Properties of GaN with Dislocations Induced by Plastic Deformation.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 717, doi. 10.1007/s11664-006-0127-8

By:

Yonenaga, Ichiro;
Makino, Hisao;
Itoh, Shun;
Goto, Takenari;
Yao, Takafumi

Publication type:

Article

Optoelectronic Properties of Expanding Thermal Plasma Deposited Textured Zinc Oxide: Effect of Aluminum Doping.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 711, doi. 10.1007/s11664-006-0126-9

By:

Groenen, R.;
Kieft, E. R.;
Linden, J. L.;
Van De Sanden, M. C. M.

Publication type:

Article

Metalorganic Chemical Vapor Deposition Growth and Characterization of InGaP/GaAs Superlattices.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 705, doi. 10.1007/s11664-006-0125-x

By:

Zhang, X. B.;
Ryou, J. H.;
Dupuis, R. D.;
Walter, G.;
Holonyak Jr., N.

Publication type:

Article

Effect of Thin Strain-Compensated Al0.6Ga0.4P Layers on the Growth of Multiple-Stacked InP/In0.5Al0.3Ga0.2P Quantum Dots.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 701, doi. 10.1007/s11664-006-0124-y

By:

Zhang, X. B.;
Ryou, J. H.;
Dupuis, R. D.;
He, L.;
Hull, R.;
Walter, G.;
Holonyak Jr., N.

Publication type:

Article

Growth of InGaN HBTs by MOCVD.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 695, doi. 10.1007/s11664-006-0123-z

By:

Chung, Theodore;
Limb, Jae;
Jae-Hyun Ryou;
Wonseok Lee;
Peng Li;
Dongwon Yoo;
Xue-Bing Zhang;
Shyh-Chiang Shen;
Dupuis, Russell D.;
Keogh, David;
Asbeck, Peter;
Chukung, Ben;
Feng, Milton;
Zakharov, Dimitri;
Lilienthal-Weber, Zusanne

Publication type:

Article

ZnO Growth on Si with Low-Temperature CdO and ZnO Buffer Layers by Molecular-Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 691, doi. 10.1007/s11664-006-0122-0

By:

Xiu, F. X.;
Yang, Z.;
Zhao, D. T.;
Liu, J. L.;
Alim, K. A.;
Balandin, A. A.;
Itkis, M. E.;
Haddon, R. C.

Publication type:

Article

Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 685, doi. 10.1007/s11664-006-0121-1

By:

Soohwan Jang;
Ren, F.;
Pearton, S. J.;
Gila, B. P.;
Hlad, M.;
Abernathy, C. R.;
Hyucksoo Yang;
Pan, C. J.;
Jenn-Inn Chyi;
Bove, P.;
Lahreche, H.;
Thuret, J.

Publication type:

Article

Selective Dry Etching of (Sc2O3)x(Ga2O3)1-x Gate Dielectrics and Surface Passivation Films on GaN.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 680, doi. 10.1007/s11664-006-0120-2

By:

Hlad, M.;
Voss, L.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Ren, F.

Publication type:

Article

Comparison of Laser-Wavelength Operation for Drilling of Via Holes in AlGaN/GaN HEMTs on SiC Substrates.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 675, doi. 10.1007/s11664-006-0119-8

By:

Anderson, T. J.;
Ren, F.;
Covert, L.;
Lin, J.;
Pearton, S. J.;
Dalrymple, T. W.;
Bozada, C.;
Fitch, R. C.;
Moser, N.;
Bedford, R. G.;
Schimpf, M.

Publication type:

Article

High-Yield GaN Nanowire Synthesis and Field-Effect Transistor Fabrication.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 670, doi. 10.1007/s11664-006-0118-9

By:

Huaqiang Wu;
Ho-Young Cha;
Chandrashekhar, M.;
Spencer, Michael G.;
Koley, Goutam

Publication type:

Article

Electrical Properties of Undoped Bulk ZnO Substrates.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 663, doi. 10.1007/s11664-006-0117-x

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Kozhukhova, E. A.;
Pearton, S. J.;
Norton, D. P.;
Osinsky, A.;
Dabiran, Amir

Publication type:

Article

Annealing Temperature Dependence of TiB2 Schottky Barrier Contacts on n-GaN.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 658, doi. 10.1007/s11664-006-0116-y

By:

Khanna, Rohit;
Pearton, S. J.;
Ren, F.;
Kravchenko, I.

Publication type:

Article

Investigation of GaNxP1-x/GaP LED Structure Optical Properties.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 654, doi. 10.1007/s11664-006-0115-z

By:

Peternai, L.;
Kovac, J.;
Jakabovic, J.;
Gottschalch, V.;
Rheinlaender, B.

Publication type:

Article

Electrical and Optical Characterization Studies of Lower Dose Si-Implanted AlxGa1-xN.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 647, doi. 10.1007/s11664-006-0114-0

By:

Mee-Yi Ryu;
Yeo, Y. K.;
Marciniak, M. A.;
Zens, T. W.;
Moore, E. A.;
Hengehold, R. L.;
Steiner, T. D.

Publication type:

Article

Growth of AlGaN Alloys Exhibiting Enhanced Luminescence Efficiency.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 641, doi. 10.1007/s11664-006-0113-1

By:

Sampath, A. V.;
Garrett, G. A.;
Collins, C. J.;
Sarney, W. L.;
Readinger, E. D.;
Newman, P. G.;
Shen, H.;
Wraback, M.

Publication type:

Article

Room-Temperature Ferromagnetic Ordering in Mn-Doped ZnO Thin Films Grown by Pulsed Laser Deposition.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 635, doi. 10.1007/s11664-006-0112-2

By:

Shim, W. Y.;
Jeon, K. A.;
Lee, K. I.;
Lee, S. Y.;
Jung, M. H.;
Lee, W. Y.

Publication type:

Article

Relationship between Infrared Photoluminescence and Resistivity in Semi-Insulating 6H-SiC.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 630, doi. 10.1007/s11664-006-0111-3

By:

Chanda, S. K.;
Koshka, Y.;
Yoganathan, M.

Publication type:

Article

Effect of High-Temperature Processing on the Creation of Boron-Related Deep Levels in 4H-SiC.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 625, doi. 10.1007/s11664-006-0110-4

By:

Das, Hrishikesh;
Koshka, Yaroslav;
Mazzola, Michael S.;
Sunkari, Swapna G.;
Wyatt, J. L.

Publication type:

Article

Extraction of SiO2/SiC Interface Trap Profile in 4H- and 6H-SiC Metal-Oxide Semiconductor Field-Effect Transistors from Subthreshold Characteristics at 25°C and 150°C.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 618, doi. 10.1007/s11664-006-0109-x

By:

Yanqing Deng;
Wei Wang;
Qizhi Fang;
Koushik, Mahalingam B.;
Chow, T. Paul

Publication type:

Article

Giant Traps on the Surface of Hydride Vapor Phase Epitaxy--Grown Free-Standing GaN.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 613, doi. 10.1007/s11664-006-0108-y

By:

Fang, Z.-Q.;
Look, D. C.;
Krtschil, A.;
Krost, A.;
Khan, F. A.;
Adesida, I.

Publication type:

Article

Calculations and Measurements of Contact Resistance of Semi-Transparent Ni/Pd Contacts to p-GaN.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 605, doi. 10.1007/s11664-006-0107-z

By:

Bogart, Katherine H. A.;
Crofton, John

Publication type:

Article

Anisotropy in the Quantum Lifetime in AlGaN/GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 599, doi. 10.1007/s11664-006-0106-0

By:

Elhamri, S.;
Mitchel, W. C.;
Mitchell, W. D.;
Berney, R.;
Landis, G. R.

Publication type:

Article

Flat GaN Epitaxial Layers Grown on Si(111) by Metalorganic Vapor Phase Epitaxy Using Step-Graded AlGaN Intermediate Layers.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 592, doi. 10.1007/s11664-006-0105-1

By:

Kai Cheng;
Leys, M.;
Degroote, S.;
Van Daele, B.;
Boeykens, S.;
Derluyn, J.;
Germain, M.;
Van Tendeloo, G.;
Engelen, J.;
Borghs, G.

Publication type:

Article

Influence of Growth Temperature and Growth Rate of p-GaN Layers on the Characteristics of Green Light Emitting Diodes.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 587, doi. 10.1007/s11664-006-0104-2

By:

Wonseok Lee;
Jae Limb;
Jae-Hyun Ryou;
Dongwon Yoo;
Chung, Theodore;
Dupuis, Russell D.

Publication type:

Article

Schottky Barrier Formation at Nonpolar Au/GaN Epilayer Interfaces.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 581, doi. 10.1007/s11664-006-0103-3

By:

Walker Jr., D. E.;
Gao, M.;
Chen, X.;
Schaff, W. J.;
Brillson, L. J.

Publication type:

Article

Catalyst-Free Growth of GaN Nanowires.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 576, doi. 10.1007/s11664-006-0102-4

By:

Bertness, K. A.;
Sanford, N. A.;
Barker, J. M.;
Schlager, J. B.;
Roshko, A.;
Davydov, A. V.;
Levin, I.

Publication type:

Article

Gate Control, Surface Leakage Currents, and Peripheral Charging in AlGaN/GaN Heterostructure Field Effect Transistors Having Nanometer-Scale Schottky Gates.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 568, doi. 10.1007/s11664-006-0101-5

By:

Kasai, S.;
Kotani, J.;
Hashizume, T.;
Hasegawa, H.

Publication type:

Article

Influence of Growth Conditions and Surface Reaction Byproducts on GaN Grown via Metal Organic Molecular Beam Epitaxy: Toward an Understanding of Surface Reaction Chemistry.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 562, doi. 10.1007/s11664-006-0100-6

By:

Pritchett, David;
Henderson, Walter;
Burnham, Shawn D.;
Doolittle, W. Alan

Publication type:

Article

Valency Configuration of Transition Metal Impurities in ZnO.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 556, doi. 10.1007/s11664-006-0099-8

By:

Petit, L.;
Schulthess, T. C.;
Svane, A.;
Temmerman, W. M.;
Szotek, Z.;
Janotti, A.

Publication type:

Article

Thermal Conductivity of Bulk ZnO after Different Thermal Treatments.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 550

By:

Özgür, Ü;
Gu, X.;
Chevtchenko, S.;
Spradlin, J.;
Cho, S.-J.;
Morkoç, H.;
Pollak, F. H.;
Everitt, H. O.;
Nemeth, B.;
Nause, J. E.

Publication type:

Article

Trap-Related Photoconductivity in ZnO Epilayers.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 543, doi. 10.1007/s11664-006-0097-x

By:

Murphy, T. E.;
Moazzami, K.;
Phillips, J. D.

Publication type:

Article

Polarization, Piezoelectric Constants, and Elastic Constants of ZnO, MgO, and CdO.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 538, doi. 10.1007/s11664-006-0096-y

By:

Gopal, Priya;
Spaldin, Nicola A.

Publication type:

Article

Synthesis and Characterization of Phosphorus-Doped ZnO and (Zn,Mg)O Thin Films via Pulsed Laser Deposition.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 530, doi. 10.1007/s11664-006-0095-z

By:

Li, Y. J.;
Heo, Y. W.;
Erie, J. M.;
Kim, H.;
Ip, K.;
Pearton, S. J.;
Norton, D. P.

Publication type:

Article

Free Carrier Absorption and Lattice Vibrational Modes in Bulk ZnO.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 525, doi. 10.1007/s11664-006-0094-0

By:

Emelie, P. Y.;
Phillips, J. D.;
Buller, B.;
Venkateswaran, U. D.

Publication type:

Article

Effect of Annealing on Electrical Properties of Radio-Frequency-Sputtered ZnO Films.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 520, doi. 10.1007/s11664-006-0093-1

By:

Alivov, Y. I.;
Bo, X.;
Akarca-Biyikli, S.;
Fan, Q.;
Xie, J.;
Biyikli, N.;
Zhu, K.;
Johnstone, D.;
Morkoç, H.

Publication type:

Article

Selective and Nonselective Wet Etching of Zn0.9Mg0.1O/ZnO.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 516, doi. 10.1007/s11664-006-0092-2

By:

Jau-Jiun Chen;
Soohwan Jang;
Ren, F.;
Yuanjie Li;
Hyun-Sik Kim;
Norton, D. P.;
Pearton, S. J.;
Osinsky, A.;
Chu, S. N . G.;
Weaver, J. F.

Publication type:

Article

Electrical Properties of ZnO Nano-Particles Embedded in Polyimide.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 512, doi. 10.1007/s11664-006-0091-3

By:

Kim, E. K.;
Kim, J. H.;
Noh, H. K.;
Kim, Y. H.

Publication type:

Article