Works matching IS 03615235 AND DT 2005 AND VI 34 AND IP 9
Results: 13
Characterization of Physical and Electrical Properties of BaTiO<sub>3</sub> Films Deposited on p-Si by Modified Polymeric Precursors.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1259, doi. 10.1007/s11664-005-0272-5
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Pastes for Electromagnetic Interference Shielding.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1255, doi. 10.1007/s11664-005-0271-6
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Optically Absorbing Metallization.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. L34, doi. 10.1007/s11664-005-0275-2
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Observed Correlation of Sn Oxide Film to Sn Whisker Growth in Sn-Cu Electrodeposit for Pb-Free Solders.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. L31, doi. 10.1007/s11664-005-0274-3
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A Study on the Temperature Dependence of Epoxy/BaTiO<sub>3</sub> Composite Embedded Capacitor Films.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1264, doi. 10.1007/s11664-005-0273-4
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Role of Ag in the Formation of Interfacial Intermetallic Phases in Sn-Zn Soldering.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1249, doi. 10.1007/s11664-005-0270-7
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Threading Dislocation Removal from the Near-Surface Region of Epitaxial Cadmium Telluride on Silicon by Lithographic Patterning of the Substrate.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1242, doi. 10.1007/s11664-005-0269-0
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Microstructures and Degradation of Heat Sink Very-Thin Quad Flat Package No-Leads Pb-Free Sn-Ag-Cu Solder Joints after Thermal Aging.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1230, doi. 10.1007/s11664-005-0268-1
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A CdTe Passivation Process for Long Wavelength Infrared HgCdTe Photo-Detectors.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1225, doi. 10.1007/s11664-005-0267-2
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A Modified Vertical Bridgman Method for Growth of High-Quality Cd<sub>1-x</sub>Zn<sub>x</sub>Te Crystals.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1215, doi. 10.1007/s11664-005-0266-3
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Ultralow-k Silicon Containing Fluorocarbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1193, doi. 10.1007/s11664-005-0264-5
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Investigation of Three-Step Epilayer Growth Approach of GaN Films to Minimize Compensation.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1187, doi. 10.1007/s11664-005-0263-6
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- Article
Local Creep in SnAg3.8Cu0.7 Lead-Free Solder.
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- Journal of Electronic Materials, 2005, v. 34, n. 9, p. 1206, doi. 10.1007/s11664-005-0265-4
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