P-Type Doping Utilizing Nitrogen and Mn Doping of ZnO Using MOCVD for Ultraviolet Lasers and Spintronic Applications.
- Published in:
- 2005
- Publication type:
- Correction Notice
Works matching IS 03615235 AND DT 2005 AND VI 34 AND IP 8
Results: 15
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2
Cure Shrinkage Measurement of Nonconductive Adhesives by Means of a Thermomechanical Analyzer.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1177, doi. 10.1007/s11664-005-0248-5
- By:
- Publication type:
- Article
3
Realization of Intrinsic p-Type ZnO Thin Films by Metal Organic Chemical Vapor Deposition.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1172, doi. 10.1007/s11664-005-0247-6
- By:
- Publication type:
- Article
4
Anisotropic Conductive Adhesives with Enhanced Thermal Conductivity for Flip Chip Applications.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1165, doi. 10.1007/s11664-005-0246-7
- By:
- Publication type:
- Article
5
Electrical and Optical Activation Studies of Si-Implanted GaN.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1157, doi. 10.1007/s11664-005-0245-8
- By:
- Publication type:
- Article
6
Wetting and Reaction of Sn-2.8Ag-0.5Cu-1.0Bi Solder with Cu and Ni Substrates.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1115, doi. 10.1007/s11664-005-0239-6
- By:
- Publication type:
- Article
7
Process Optimization to Overcome Void Formation in Nonconductive Paste Interconnections for Fine-Pitch Applications.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1143, doi. 10.1007/s11664-005-0243-x
- By:
- Publication type:
- Article
8
Primary Solidification Phases of the Sn-Rich Sn-Ag-Cu-Ni Quaternary System.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1135, doi. 10.1007/s11664-005-0242-y
- By:
- Publication type:
- Article
9
Interfacial Reactions and Compound Formation of Sn-Ag-Cu Solders by Mechanical Alloying on Electroless Ni-P/Cu Under Bump Metallization.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1129, doi. 10.1007/s11664-005-0241-z
- By:
- Publication type:
- Article
10
Investigation of Structure and Properties of Nanocrystalline Silicon on Various Buffer Layers.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1123, doi. 10.1007/s11664-005-0240-0
- By:
- Publication type:
- Article
11
Novel Multilayered Ti/TiN Diffusion Barrier for Al Metallization.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1150, doi. 10.1007/s11664-005-0244-9
- By:
- Publication type:
- Article
12
Effects of Prolonged Annealing on NiSi at Low Temperature (500°C).
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1110, doi. 10.1007/s11664-005-0238-7
- By:
- Publication type:
- Article
13
The Electrical and Physical Analysis of Pt Gate/Al<sub>2</sub>O<sub>3</sub>/p-Si (100) with Dual High-k Gate Oxide Thickness for Deep Submicron Complementary Metal-Oxide-Semiconductor Device with Low Power and High Reliability.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1104, doi. 10.1007/s11664-005-0237-8
- By:
- Publication type:
- Article
14
Progress in Crystalline Multijunction and Thin-Film Photovoltaics.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1099, doi. 10.1007/s11664-005-0236-9
- By:
- Publication type:
- Article
15
Influence of Proton Radiation on the Nonlinear Current-Voltage Characteristics of Pulsed Laser Deposited Ilmenite-Hematite Thin Films.
- Published in:
- Journal of Electronic Materials, 2005, v. 34, n. 8, p. 1095, doi. 10.1007/s11664-005-0235-x
- By:
- Publication type:
- Article