Works matching IS 03615235 AND DT 2005 AND VI 34 AND IP 6

Results: 51

Growth of Very Low Arsenic-Doped HgCdTe.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 963, doi. 10.1007/s11664-005-0051-3

By:

Chandra, D.;
Weirauch, D. F.;
Schaake, H. F.;
Kinch, M. A.;
Aqariden, F.;
Wan, C. F.;
Shih, H. D.

Publication type:

Article

Regular and Anomalous-Type Conversion of p-CdTe during Cd-Rich Annealing.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 957, doi. 10.1007/s11664-005-0050-4

By:

Belas, E.;
Franc, J.;
Grill, R.;
Toth, A. L.;
Horodysky, P.;
Moravec, P.;
Höschl, P.

Publication type:

Article

Morphological Defects of Molecular Beam Epitaxy--Grown CdTe and CdSeTe on Si.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 953, doi. 10.1007/s11664-005-0049-x

By:

Campo, Eva M.;
Hierl, Thomas;
Hwang, James C. M.;
Yuanping Chen;
Brill, Gregory

Publication type:

Article

P-Type Doping Utilizing Nitrogen and Mn Doping of ZnO Using MOCVD for Ultraviolet Lasers and Spintronic Applications.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 949, doi. 10.1007/s11664-005-0048-y

By:

Egerton, E. James;
Sood, Ashok K.;
Singh, Rajwinder;
Puri, Yash R.;
Davis, Robert F.;
Pierce, Jon;
Look, David C.;
Steiner, Todd

Publication type:

Article

Optical Properties of Cl-Doped ZnSe Epilayers Grown on GaAs Substrates.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 944, doi. 10.1007/s11664-005-0047-z

By:

Karrer, B. C.;
Peiris, F. C.;
Vanmil, Brenda;
Ming Luo;
Giles, N. C.;
Myers, Thomas H.

Publication type:

Article

Semi-Insulating CdTe with a Minimized Deep-Level Doping.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 939, doi. 10.1007/s11664-005-0046-0

By:

Grill, R.;
Franc, J.;
Turkevych, I.;
Höschl, P.;
Belas, E.;
Moravec, P.

Publication type:

Article

Correlation between Visual Defects and Increased Dark Current in Large-Area Hg1-xCdxTe Photodiodes.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 933, doi. 10.1007/s11664-005-0045-1

By:

D'Souza, A. I.;
Stapelbroek, M. G.;
Willis, R.;
Masterjohn, S.;
Dolan, P.;
Alderete, M.;
Bryan, E.;
Ehlert, J. C.;
Andrews, J. E.;
Wijewarnasuriya, P. S.;
Boehmer, E.;
Bhargava, S.

Publication type:

Article

1/f Noise in HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 928, doi. 10.1007/s11664-005-0044-2

By:

Kinch, M. A.;
Wan, C.-F.;
Beck, J. D.

Publication type:

Article

Imaging One-Dimensional and Two-Dimensional Planar Photodiode Detectors Fabricated by Ion Milling Molecular Beam Epitaxy CdHgTe.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 922, doi. 10.1007/s11664-005-0043-3

By:

Haakenaasen, R.;
Steen, H.;
Selvig, E.;
Lorentzen, T.;
Van Rheenen, A. D.;
Trosdahl-Iversen, L.;
Syversen, H.;
Hall, D.;
Gordon, N.

Publication type:

Article

Current Voltage Modeling of Current Limiting Mechanisms in HgCdTe Focal Plane Array Photodetectors.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 913, doi. 10.1007/s11664-005-0042-4

By:

Gilmore, Angelo Scotty;
Bangs, James;
Gerrish, Amanda

Publication type:

Article

Design and Development of Multicolor MWIR/LWIR and LWIR/VLWIR Detector Arrays.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 909, doi. 10.1007/s11664-005-0041-5

By:

Sood, Ashok K.;
Egerton, James E.;
Puri, Yash R.;
Bellotti, Enrico;
D'Orsogna, Donald;
Becker, Latika;
Balcerak, Raymond;
Freyvogel, Ken;
Richwine, Robert

Publication type:

Article

Comparison of Normal and Inverted Band Structure HgTe/CdTe Superlattices for Very Long Wavelength Infrared Detectors.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 905, doi. 10.1007/s11664-005-0040-6

By:

Grein, C. H.;
Jung, H.;
Singh, R.;
Flatté, M. E.

Publication type:

Article

Control and Growth of Middle Wave Infrared (MWIR) Hg(1-x)CdxTe on Si by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 898, doi. 10.1007/s11664-005-0039-z

By:

Vilela, M. F.;
Buell, A. A.;
Newton, M. D.;
Venzor, G. M.;
Childs, A. C.;
Peterson, J. M.;
Franklin, J. J.;
Bornfreund, R. E.;
Radford, W. A.;
Johnson, S. M.

Publication type:

Article

Ten-Inch Molecular Beam Epitaxy Production System for HgCdTe Growth.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 891, doi. 10.1007/s11664-005-0038-0

By:

Zandian, Majid;
Scott, D.;
Garnett, J.;
Edwall, D. D.;
Pasko, J.;
Farris, M.;
Daraselia, M.;
Arias, J. M.;
Bajaj, J.;
Hall, D. N. B.;
Jacobson, S.;
Luppino, G.;
Parker, S.

Publication type:

Article

Molecular Beam Epitaxy Growth of High-Quality HgCdTe LWIR Layers on Polished and Repolished CdZnTe Substrates.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 885, doi. 10.1007/s11664-005-0037-1

By:

Singh, R.;
Velicu, S.;
Crocco, J.;
Chang, Y.;
Zhao, J.;
Almeida, L. A.;
Markunas, J.;
Kaleczyc, A.;
Dinan, J. H.

Publication type:

Article

Minority Carrier Lifetime in p-HgCdTe.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 880, doi. 10.1007/s11664-005-0036-2

By:

Kinch, M. A.;
Aqariden, F.;
Chandra, D.;
Liao, P.-K.;
Schaake, H. F.;
Shih, H. D.

Publication type:

Article

Model for Minority Carrier Lifetimes in Doped HgCdTe.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 873, doi. 10.1007/s11664-005-0035-3

By:

Krishnamurthy, S.;
Berding, M. A.;
Yu, Z. G.;
Swartz, C. H.;
Myers, T. H.;
Edwall, D. D.;
DeWames, R.

Publication type:

Article

Diffusion of Gold and Native Defects in Mercury Cadmium Telluride.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 868, doi. 10.1007/s11664-005-0034-4

By:

Ciani, Anthony J.;
Ogut, Serdar;
Batra, Inder P.;
Sivananthan, Siva

Publication type:

Article

Deactivation of Arsenic as an Acceptor by Ion Implantation and Reactivation by Low-Temperature Anneal.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 864, doi. 10.1007/s11664-005-0033-5

By:

Chandra, D.;
Schaake, H. F.;
Kinch, M. A.;
Dreiske, P. D.;
Teherani, T.;
Aqariden, F.;
Weirauch, D. F.;
Shih, H. D.

Publication type:

Article

Exfoliation and Blistering of Cd0.96Zn0.04Te Substrates by Ion Implantation.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 859, doi. 10.1007/s11664-005-0032-6

By:

Miclaus, C.;
Malouf, G.;
Johnson, S. M.;
Goorsky, M. S.

Publication type:

Article

An Improved Method for Hg1-xCdxTe Surface Chemistry Characterization.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 851, doi. 10.1007/s11664-005-0031-7

By:

Olshove, R.;
Garwood, G.;
Mowat, I.;
Bangs, J.;
Liguori, M.

Publication type:

Article

Arsenic Deposition as a Precursor Layer on Silicon (211) and (311) Surfaces.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 846, doi. 10.1007/s11664-005-0030-8

By:

Fulk, C.;
Sporken, R.;
Dumont, J.;
Zavitz, D.;
Trenary, M.;
Gupta, B.;
Brill, G.;
Dinan, J.;
Sivananthan, S.

Publication type:

Article

Influence of Arsenic on the Atomic Structure of the Si(112) Surface.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 839, doi. 10.1007/s11664-005-0029-1

By:

Zavitz, Daniel H.;
Evstigneeva, Alexandra;
Singh, Rasdip;
Fulk, Chad;
Trenary, Michael

Publication type:

Article

Molecular Beam Epitaxy Grown Long Wavelength Infrared HgCdTe on Si Detector Performance.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 832, doi. 10.1007/s11664-005-0028-2

By:

Carmody, M.;
Pasko, J. G.;
Edwall, D.;
Bailey, R.;
Arias, J.;
Cabelli, S.;
Bajaj, J.;
Almeida, L. A.;
Dinan, J. H.;
Groenert, M.;
Stoltz, A. J.;
Chen, Y.;
Brill, G.;
Dhar, N. K.

Publication type:

Article

Monolithically Integrated HgCdTe Focal Plane Arrays.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 820, doi. 10.1007/s11664-005-0027-3

By:

Velicu, S.;
Lee, T. S.;
Grein, C. H.;
Boieriu, P.;
Chen, Y. P.;
Dhar, N. K.;
Dinan, J.;
Lianos, D.

Publication type:

Article

Development of Nuclear Radiation Detectors Based on Epitaxially Grown Thick CdTe Layers on n+-GaAs Substrates.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 815, doi. 10.1007/s11664-005-0026-4

By:

Niraula, M.;
Yasuda, K.;
Takagi, K.;
Kusama, H.;
Tominaga, M.;
Yamamoto, Y.;
Agata, Y.;
Suzuki, K.

Publication type:

Article

Pressure Dependence of Intersubband Transitions in HgTe/Hg0.3Cd0.7Te Superlattices.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 811, doi. 10.1007/s11664-005-0025-5

By:

Becker, C. R.;
Latussek, V.;
Landwehr, G.;
Bini, R.;
Ulivi, L.

Publication type:

Article

Temperature, Thickness, and Interfacial Composition Effects on the Absorption Properties of (Hg,Cd)Te Epilayers Grown by Liquid-Phase Epitaxy on CdZnTe.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 768, doi. 10.1007/s11664-005-0018-4

By:

Littler, C. L.;
Gorman, B. P.;
Weirauch, D. F.;
Liao, P. K.;
Schaake, H. F.

Publication type:

Article

High-Energy X-ray Diffraction and Topography Investigation of CdZnTe.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 804, doi. 10.1007/s11664-005-0024-6

By:

Carini, G. A.;
Camarda, G. S.;
Zhong, Z.;
Siddons, D. P.;
Bolotnikov, A. E.;
Wright, G. W.;
Barber, B.;
Arnone, C.;
James, R. B.

Publication type:

Article

Spatially Resolved Photoluminescence and Transmission Spectra of HgCdTe.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 791, doi. 10.1007/s11664-005-0022-8

By:

Furstenberg, Robert;
White, Jeffrey O.;
Olson, Gregory L.

Publication type:

Article

Optical and Microstructural Characterization of the Effects of Rapid Thermal Annealing of CdTe Thin Films Grown on Si (100) Substrates.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 786, doi. 10.1007/s11664-005-0021-9

By:

Neretina, S.;
Sochinskii, N. V.;
Mascher, P.

Publication type:

Article

Lateral Uniformity in HgCdTe Layers Grown by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 779, doi. 10.1007/s11664-005-0020-x

By:

Nosho, Brett Z.;
Roth, John A.;
Jensen, John E.;
Pham, Le

Publication type:

Article

Detailed Study of Above Bandgap Optical Absorption in HgCdTe.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 773, doi. 10.1007/s11664-005-0019-3

By:

Moazzami, K.;
Phillips, J.;
Lee, D.;
Krishnamurthy, S.;
Benoit, G.;
Fink, Y.;
Tiwald, T.

Publication type:

Article

High-Resolution X-Ray Diffraction Studies of Molecular Beam Epitaxy-Grown HgCdTe Heterostructures and CdZnTe Substrates.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 795, doi. 10.1007/s11664-005-0023-7

By:

Sewell, R. H.;
Musca, C. A.;
Dell, J. M.;
Faraone, L.;
Usher, B. F.;
Dieing, T.

Publication type:

Article

Improved Model for the Analysis of FTIR Transmission Spectra from Multilayer HgCdTe Structures.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 762, doi. 10.1007/s11664-005-0017-5

By:

Daraselia, M.;
Carmody, M.;
Edwall, D. D.;
Tiwald, T. E.

Publication type:

Article

Investigation of HgCdTe Surface Quality Following Br-Based Etching for Device Fabrication Using Spectroscopic Ellipsometry.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 758, doi. 10.1007/s11664-005-0016-6

By:

Varesi, J. B.;
Benson, J. D.;
Martinka, M.;
Stoltz, A. J.;
Mason, W. E.;
Almeida, L. A.;
Kaleczyc, A. W.;
Boyd, P. R.;
Dinan, J. H.

Publication type:

Article

Al Ohmic Contacts to HCl-Treated MgxZn1-xO.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 754, doi. 10.1007/s11664-005-0015-7

By:

Sheng, H.;
Saraf, G.;
Emanetoglu, N. W.;
Hill, D. H.;
Lu, Y.

Publication type:

Article

Inductively Coupled Plasma Etching for Large Format HgCdTe Focal Plane Array Fabrication.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 746, doi. 10.1007/s11664-005-0014-8

By:

Smith, E. P. G.;
Venzor, G. M.;
Newton, M. D.;
Liguori, M. V.;
Gleason, J. K.;
Bornfreund, R. E.;
Johnson, S. M.;
Benson, J. D.;
Stoltz, A. J.;
Varesi, J. B.;
Dinan, J. H.;
Radford, W. A.

Publication type:

Article

Inductively Coupled Plasma Etching of HgCdTe Using a CH4-Based Mixture.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 740, doi. 10.1007/s11664-005-0013-9

By:

Laffosse, E.;
Baylet, J.;
Chamonal, J. P.;
Destefanis, G.;
Cartry, G.;
Cardinaud, C.

Publication type:

Article

A Langmuir Probe Investigation of Electron Cyclotron Resonance Argon-Hydrogen Plasmas.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 733, doi. 10.1007/s11664-005-0012-x

By:

Stoltz, A. J.;
Sperry, M. J.;
Benson, J. D.;
Varesi, J. B.;
Martinka, M.;
Almeida, L. A.;
Boyd, P. R.;
Dinan, J. H.

Publication type:

Article

Surface Structure of Plasma-Etched (211)B HgCdTe.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 726, doi. 10.1007/s11664-005-0011-y

By:

Benson, J. D.;
Stoltz, A. J.;
Varesi, J. B.;
Almeida, L. A.;
Smith, E. P. G.;
Johnson, S. M.;
Martinka, M.;
Kaleczyc, A. W.;
Markunas, J. K.;
Boyd, P. R.;
Dinan, J. H.

Publication type:

Article

256 x 256 Focal Plane Array Midwavelength Infrared Camera Based on InAs/GaSb Short-Period Superlattices.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 722, doi. 10.1007/s11664-005-0010-z

By:

Walther, M.;
Rehm, R.;
Fuchs, F.;
Schmitz, J.;
Fleißner, J.;
Cabanski, W.;
Eich, D.;
Finck, M.;
Rode, W.;
Wendler, J.;
Wollrab, R.;
Ziegler, J.

Publication type:

Article

A Monolithically Integrated HgCdTe Short-Wavelength Infrared Photodetector and Micro-Electro-Mechanical Systems-Based Optical Filter.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 716, doi. 10.1007/s11664-005-0009-5

By:

Antoszewski, J.;
Winchester, K. J.;
Keating, A. J.;
Nguyen, T.;
Silva, K. K. M. B. D.;
Musca, C. A.;
Dell, J. M.;
Faraone, L.;
Mitra, P.;
Beck, J. D.;
Skokan, M. R.;
Robinson, J. E.

Publication type:

Article

Mercury Cadmium Telluride/Cadmium Telluride Distributed Bragg Reflectors for Use with Resonant Cavity-Enhanced Detectors.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 710, doi. 10.1007/s11664-005-0008-6

By:

Wehner, J. G. A.;
Sewell, R. H.;
Antoszewski, J.;
Musca, C. A.;
Dell, J. M.;
Faraone, L.

Publication type:

Article

Cadmium Telluride Growth on Patterned Substrates for Mercury Cadmium Telluride Infrared Detectors.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 704, doi. 10.1007/s11664-005-0007-7

By:

Bommena, R.;
Fulk, C.;
Zhao, Jun;
Lee, T. S.;
Sivananthan, S.;
Brueck, S. R. J.;
Hersee, S. D.

Publication type:

Article

Growth and Electronic Properties Of ZnO Epilayers by Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 699, doi. 10.1007/s11664-005-0006-8

By:

Murphy, T. E.;
Chen, D. Y.;
Phillips, J. D.

Publication type:

Article

A New Growth Method for CdTe: A Breakthrough toward Large Areas.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 693, doi. 10.1007/s11664-005-0005-9

By:

Pelliciari, B.;
Dierre, F.;
Brellier, D.;
Verger, L.;
Glasser, F.;
Schaub, B.

Publication type:

Article

Traveling Heater Method Preparation and Composition Analysis of CdTe Ingots.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 687, doi. 10.1007/s11664-005-0004-x

By:

Audet, N.;
Guskov, V. N.;
Greenberg, J. H.

Publication type:

Article

Synthesis of Ultra-High-Purity CdTe Ingots by the Traveling Heater Method.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 683, doi. 10.1007/s11664-005-0003-y

By:

Audet, N.;
Cossette, M.

Publication type:

Article

Spicer Award Foreword.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 6, p. 682, doi. 10.1007/s11664-005-0002-z

By:

Casselman, Thomas N.

Publication type:

Article