Works matching IS 03615235 AND DT 2005 AND VI 34 AND IP 6
Results: 51
Growth of Very Low Arsenic-Doped HgCdTe.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 963, doi. 10.1007/s11664-005-0051-3
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Regular and Anomalous-Type Conversion of p-CdTe during Cd-Rich Annealing.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 957, doi. 10.1007/s11664-005-0050-4
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Morphological Defects of Molecular Beam Epitaxy--Grown CdTe and CdSeTe on Si.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 953, doi. 10.1007/s11664-005-0049-x
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P-Type Doping Utilizing Nitrogen and Mn Doping of ZnO Using MOCVD for Ultraviolet Lasers and Spintronic Applications.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 949, doi. 10.1007/s11664-005-0048-y
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Optical Properties of Cl-Doped ZnSe Epilayers Grown on GaAs Substrates.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 944, doi. 10.1007/s11664-005-0047-z
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Semi-Insulating CdTe with a Minimized Deep-Level Doping.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 939, doi. 10.1007/s11664-005-0046-0
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Correlation between Visual Defects and Increased Dark Current in Large-Area Hg<sub>1-x</sub>Cd<sub>x</sub>Te Photodiodes.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 933, doi. 10.1007/s11664-005-0045-1
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Imaging One-Dimensional and Two-Dimensional Planar Photodiode Detectors Fabricated by Ion Milling Molecular Beam Epitaxy CdHgTe.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 922, doi. 10.1007/s11664-005-0043-3
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1/f Noise in HgCdTe Photodiodes.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 928, doi. 10.1007/s11664-005-0044-2
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Design and Development of Multicolor MWIR/LWIR and LWIR/VLWIR Detector Arrays.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 909, doi. 10.1007/s11664-005-0041-5
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Minority Carrier Lifetime in p-HgCdTe.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 880, doi. 10.1007/s11664-005-0036-2
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Current Voltage Modeling of Current Limiting Mechanisms in HgCdTe Focal Plane Array Photodetectors.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 913, doi. 10.1007/s11664-005-0042-4
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- Article
Model for Minority Carrier Lifetimes in Doped HgCdTe.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 873, doi. 10.1007/s11664-005-0035-3
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Ten-Inch Molecular Beam Epitaxy Production System for HgCdTe Growth.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 891, doi. 10.1007/s11664-005-0038-0
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Molecular Beam Epitaxy Growth of High-Quality HgCdTe LWIR Layers on Polished and Repolished CdZnTe Substrates.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 885, doi. 10.1007/s11664-005-0037-1
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Molecular Beam Epitaxy Grown Long Wavelength Infrared HgCdTe on Si Detector Performance.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 832, doi. 10.1007/s11664-005-0028-2
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Comparison of Normal and Inverted Band Structure HgTe/CdTe Superlattices for Very Long Wavelength Infrared Detectors.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 905, doi. 10.1007/s11664-005-0040-6
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- Article
Control and Growth of Middle Wave Infrared (MWIR) Hg<sub>(1-x)</sub>Cd<sub>x</sub>Te on Si by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 898, doi. 10.1007/s11664-005-0039-z
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Diffusion of Gold and Native Defects in Mercury Cadmium Telluride.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 868, doi. 10.1007/s11664-005-0034-4
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Exfoliation and Blistering of Cd<sub>0.96</sub>Zn<sub>0.04</sub>Te Substrates by Ion Implantation.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 859, doi. 10.1007/s11664-005-0032-6
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Arsenic Deposition as a Precursor Layer on Silicon (211) and (311) Surfaces.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 846, doi. 10.1007/s11664-005-0030-8
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An Improved Method for Hg<sub>1-x</sub>Cd<sub>x</sub>Te Surface Chemistry Characterization.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 851, doi. 10.1007/s11664-005-0031-7
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Influence of Arsenic on the Atomic Structure of the Si(112) Surface.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 839, doi. 10.1007/s11664-005-0029-1
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Deactivation of Arsenic as an Acceptor by Ion Implantation and Reactivation by Low-Temperature Anneal.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 864, doi. 10.1007/s11664-005-0033-5
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Monolithically Integrated HgCdTe Focal Plane Arrays.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 820, doi. 10.1007/s11664-005-0027-3
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Development of Nuclear Radiation Detectors Based on Epitaxially Grown Thick CdTe Layers on n<sup>+</sup>-GaAs Substrates.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 815, doi. 10.1007/s11664-005-0026-4
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Pressure Dependence of Intersubband Transitions in HgTe/Hg<sub>0.3</sub>Cd<sub>0.7</sub>Te Superlattices.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 811, doi. 10.1007/s11664-005-0025-5
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Detailed Study of Above Bandgap Optical Absorption in HgCdTe.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 773, doi. 10.1007/s11664-005-0019-3
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High-Energy X-ray Diffraction and Topography Investigation of CdZnTe.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 804, doi. 10.1007/s11664-005-0024-6
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Spatially Resolved Photoluminescence and Transmission Spectra of HgCdTe.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 791, doi. 10.1007/s11664-005-0022-8
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Optical and Microstructural Characterization of the Effects of Rapid Thermal Annealing of CdTe Thin Films Grown on Si (100) Substrates.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 786, doi. 10.1007/s11664-005-0021-9
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Lateral Uniformity in HgCdTe Layers Grown by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 779, doi. 10.1007/s11664-005-0020-x
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- Article
Al Ohmic Contacts to HCl-Treated Mg<sub>x</sub>Zn<sub>1-x</sub>O.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 754, doi. 10.1007/s11664-005-0015-7
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High-Resolution X-Ray Diffraction Studies of Molecular Beam Epitaxy-Grown HgCdTe Heterostructures and CdZnTe Substrates.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 795, doi. 10.1007/s11664-005-0023-7
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Improved Model for the Analysis of FTIR Transmission Spectra from Multilayer HgCdTe Structures.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 762, doi. 10.1007/s11664-005-0017-5
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Investigation of HgCdTe Surface Quality Following Br-Based Etching for Device Fabrication Using Spectroscopic Ellipsometry.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 758, doi. 10.1007/s11664-005-0016-6
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A Monolithically Integrated HgCdTe Short-Wavelength Infrared Photodetector and Micro-Electro-Mechanical Systems-Based Optical Filter.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 716, doi. 10.1007/s11664-005-0009-5
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Inductively Coupled Plasma Etching of HgCdTe Using a CH<sub>4</sub>-Based Mixture.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 740, doi. 10.1007/s11664-005-0013-9
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Temperature, Thickness, and Interfacial Composition Effects on the Absorption Properties of (Hg,Cd)Te Epilayers Grown by Liquid-Phase Epitaxy on CdZnTe.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 768, doi. 10.1007/s11664-005-0018-4
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Surface Structure of Plasma-Etched (211)B HgCdTe.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 726, doi. 10.1007/s11664-005-0011-y
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A Langmuir Probe Investigation of Electron Cyclotron Resonance Argon-Hydrogen Plasmas.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 733, doi. 10.1007/s11664-005-0012-x
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256 x 256 Focal Plane Array Midwavelength Infrared Camera Based on InAs/GaSb Short-Period Superlattices.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 722, doi. 10.1007/s11664-005-0010-z
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Inductively Coupled Plasma Etching for Large Format HgCdTe Focal Plane Array Fabrication.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 746, doi. 10.1007/s11664-005-0014-8
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Mercury Cadmium Telluride/Cadmium Telluride Distributed Bragg Reflectors for Use with Resonant Cavity-Enhanced Detectors.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 710, doi. 10.1007/s11664-005-0008-6
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Cadmium Telluride Growth on Patterned Substrates for Mercury Cadmium Telluride Infrared Detectors.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 704, doi. 10.1007/s11664-005-0007-7
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Growth and Electronic Properties Of ZnO Epilayers by Plasma-Assisted Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 699, doi. 10.1007/s11664-005-0006-8
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A New Growth Method for CdTe: A Breakthrough toward Large Areas.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 693, doi. 10.1007/s11664-005-0005-9
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Traveling Heater Method Preparation and Composition Analysis of CdTe Ingots.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 687, doi. 10.1007/s11664-005-0004-x
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Synthesis of Ultra-High-Purity CdTe Ingots by the Traveling Heater Method.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 683, doi. 10.1007/s11664-005-0003-y
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Spicer Award Foreword.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 682, doi. 10.1007/s11664-005-0002-z
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- Article