Works matching IS 03615235 AND DT 2005 AND VI 34 AND IP 10

Results: 13

Solid-State Annealing Behavior of Two High-Pb Solders, 95Pb5Sn and 90Pb10Sn, on Cu Under Bump Metallurgy.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. L43, doi. 10.1007/s11664-005-0262-7

By:

Ramanathan, L. N.;
Jang, J. W.;
Lin, J. K.;
Frear, D. R.

Publication type:

Article

Growth of II-IV-V<sub>2</sub> Chalcopyrite Nitrides by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1349, doi. 10.1007/s11664-005-0261-8

By:

Van Nostrand, J. E.;
Albrecht, J. D.;
Cortez, R.;
Leedy, K. D.;
Johnson, B.;
O'Keefe, M. J.

Publication type:

Article

A Comparative Study of Micropipe Decoration and Counting in Conductive and Semi-Insulating Silicon Carbide Wafers.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1342, doi. 10.1007/s11664-005-0260-9

By:

Jianwei Wan;
Seung-Ho Park;
Gilyong Chung;
Loboda, Mark

Publication type:

Article

Carbon-Black Thixotropic Thermal Pastes for Improving Thermal Contacts.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1336, doi. 10.1007/s11664-005-0259-2

By:

Chia-Ken Leong;
Aoyagi, Yasuhiro;
Chung, D. D. L.

Publication type:

Article

Scanning Electron Microscope In-Situ Investigation of Fracture Behavior in 96.5Sn3.5Ag Lead-Free Solder.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1324, doi. 10.1007/s11664-005-0258-3

By:

Ying Ding;
Chunqing Wang;
Mingyu Li

Publication type:

Article

The Joint Strength and Microstructure of Fluxless Au/Sn Solders in InP-Based Laser Diode Packages.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1318, doi. 10.1007/s11664-005-0257-4

By:

Sheen, M. T.;
Ho, Y. H.;
Wang, C. L.;
Hsieh, K. C.;
Cheng, W. H.

Publication type:

Article

A Parametric Approach for Assessment of Thermomechanical Fatigue Performance of Sn-Based Solder Joints.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1313, doi. 10.1007/s11664-005-0256-5

By:

Subramanian, K. N.

Publication type:

Article

Simultaneous Formation of p- and n-Type Ohmic Contacts to 4H-SiC Using the Ternary Ni/Ti/Al System.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1310, doi. 10.1007/s11664-005-0255-6

By:

Tsukimoto, S.;
Sakai, T.;
Onishi, T.;
Ito, Kazuhiro;
Murakami, Masanori

Publication type:

Article

Roughness and Texture Correlation of Al Films.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1307, doi. 10.1007/s11664-005-0254-7

By:

Wenjie Zhang;
Yi, Leeward;
Juineng Tu;
Pingyi Chang;
Duli Mao;
Jin Wu

Publication type:

Article

Growth and Properties of Digitally-Alloyed AlGaInP by Solid Source Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1301, doi. 10.1007/s11664-005-0253-8

By:

Kwon, O.;
Lin, Y.;
Boeckl, J.;
Ringel, S. A.

Publication type:

Article

The Correlation between Stress Relaxation and Steady-State Creep of Eutectic Sn-Pb.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1287, doi. 10.1007/s11664-005-0252-9

By:

Bang, W. H.;
Oh, K. H.;
Jung, J. P.;
Morris Jr., J. W.;
Hua, Fay

Publication type:

Article

Modeling of the Zero-Bias Resistance-Area Product of Long Wavelength Infrared HgCdTe-on-Si Diodes Fabricated from Molecular Beam Epitaxy-Grown Epitaxial Layers.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1280, doi. 10.1007/s11664-005-0251-x

By:

Gopal, Vishnu;
Gupta, Sudha

Publication type:

Article

Thermal Oxidation of Polycrystalline and Single Crystalline Aluminum Nitride Wafers.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 10, p. 1271, doi. 10.1007/s11664-005-0250-y

By:

Gu, Z.;
Edgar, J. H.;
Speakman, S. A.;
Blom, D.;
Perrin, J.;
Chaudhuri, J.

Publication type:

Article