Creep Properties of Sn-8Mass%Zn-3Mass%Bi Lead-Free Alloy.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 923, doi. 10.1007/s11664-004-0222-7
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- Article
Works matching IS 03615235 AND DT 2004 AND VI 33 AND IP 8
Results: 14
1
2
Formation of Thermally Stable Ni Monosilicide Using an Inductively Coupled Plasma Process.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 916, doi. 10.1007/s11664-004-0221-8
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- Article
3
GaAs-Based Metal-Oxide Semiconductor Field-Effect Transistors with Al<sub>2</sub>O<sub>3</sub> Gate Dielectrics Grown by Atomic Layer Deposition.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 912, doi. 10.1007/s11664-004-0220-9
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- Article
4
Influence of Si<sub>3</sub>N<sub>4</sub> Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 908, doi. 10.1007/s11664-004-0219-2
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- Article
5
Degradation of Electroless Ni(P) Under-Bump Metallization in Sn3.5Ag and Sn37Pb Solders during High-Temperature Storage.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 900, doi. 10.1007/s11664-004-0218-3
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- Article
6
Simulation of the Potting Effect on the High-G MEMS Accelerometer.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 893, doi. 10.1007/s11664-004-0217-4
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- Publication type:
- Article
7
Germanium-on-Insulator Substrates by Wafer Bonding.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 886, doi. 10.1007/s11664-004-0216-5
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- Publication type:
- Article
8
Correlation of CdZnTe(211)B Substrate Surface Morphology and HgCdTe(211)B Epilayer Defects.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 881, doi. 10.1007/s11664-004-0215-6
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- Publication type:
- Article
9
Impurities in Hydride Gases Part 2: Investigation of Trace CO<sub>2</sub> in the Liquid and Vapor Phases of Ultra-Pure Ammonia.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 873, doi. 10.1007/s11664-004-0214-7
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- Article
10
Room-Temperature Photoluminescence of Ga<sub>0.96</sub>In<sub>0.04</sub> As<sub>0.11</sub>Sb<sub>0.89</sub> Lattice Matched to InAs.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 867, doi. 10.1007/s11664-004-0213-8
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- Article
11
Infrared Transmission Spectra of Cd<sub>1-x</sub>Zn<sub>x</sub>Te (x = 0.04) Crystals.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 861, doi. 10.1007/s11664-004-0212-9
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- Article
12
Rapid Thermal Annealing Effects on the Photoluminescence Properties of Molecular Beam Epitaxy-Grown GaIn(N)As Quantum Wells with Ga(N)As Spacers and Barriers.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 851, doi. 10.1007/s11664-004-0211-x
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- Article
13
Normal-Incidence Mid-Infrared Ge Quantum-Dot Photodetector.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 846, doi. 10.1007/s11664-004-0210-y
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- Publication type:
- Article
14
Determination of the Direction of Piezoelectric Field in InGaN/GaN Multiple Quantum-Well Structures Grown by Metal-Organic Chemical Vapor Deposition.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 841, doi. 10.1007/s11664-004-0209-4
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- Publication type:
- Article