2004 Electronic Materials Conference TECHNICAL PROGRAM.
- Published in:
- 2004
- Publication type:
- Proceeding
Works matching IS 03615235 AND DT 2004 AND VI 33 AND IP 7
Results: 16
1
2
Intermetallic Compounds Formed during the Reflow and Aging of Sn-3.8Ag-0.7Cu and Sn-20In-2Ag-0.5Cu Solder Ball Grid Array Packages.
- Published in:
- 2004
- Publication type:
- Correction Notice
3
Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu Multilayer Structures as Schottky Metals for GaAs Diodes.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. L15, doi. 10.1007/s11664-004-0251-2
- By:
- Publication type:
- Article
4
Growth and Characterization of Totally Relaxed InGaAs Thick Layers on Strain-Relaxed Paramorphic InP Substrates.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 833, doi. 10.1007/s11664-004-0250-3
- By:
- Publication type:
- Article
5
Growth and Characterization of ZnO Thin Films on GaN Epilayers.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 826, doi. 10.1007/s11664-004-0249-9
- By:
- Publication type:
- Article
6
Silicon Nano-Asperities: Morphological Evolution and Electrical Properties of Double-Polysilicon Interlayers.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 819, doi. 10.1007/s11664-004-0248-x
- By:
- Publication type:
- Article
7
Lattice Instability in ZnSe:Ni Crystal.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 815, doi. 10.1007/s11664-004-0247-y
- By:
- Publication type:
- Article
8
Er<sub>2</sub>O<sub>3</sub> for High-Gain Waveguide Amplifiers.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 809, doi. 10.1007/s11664-004-0246-z
- By:
- Publication type:
- Article
9
Excess Si Atoms Near the Pyrolytic-Gas-Passivated Ultrathin Silicon Oxide/Si(100) Interface.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 802, doi. 10.1007/s11664-004-0245-0
- By:
- Publication type:
- Article
10
Electromigration and Integration Aspects for the Copper-SiLK System.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 796, doi. 10.1007/s11664-004-0244-1
- By:
- Publication type:
- Article
11
Effects of Phosphorus Content on the Reaction of Electroless Ni-P with Sn and Crystallization of Ni-P.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 790, doi. 10.1007/s11664-004-0243-2
- By:
- Publication type:
- Article
12
Low-Temperature Crystallization of Amorphous Silicon Using Cu Field-Aided Lateral Crystallization at 350°C.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 786, doi. 10.1007/s11664-004-0242-3
- By:
- Publication type:
- Article
13
A Dry-Patterned Cu(Mg) Alloy Film as a Gate Electrode in a Thin-Film Transistor Liquid Crystal Display.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 780, doi. 10.1007/s11664-004-0241-4
- By:
- Publication type:
- Article
14
Large-Area Oxidation of AlAs Layers for Dielectric Stacks and Thick Buried Oxides.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 774, doi. 10.1007/s11664-004-0240-5
- By:
- Publication type:
- Article
15
The Reaction Characteristics of Ultra-Thin Ni Films on Undoped and Doped Si (100).
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 770, doi. 10.1007/s11664-004-0239-y
- By:
- Publication type:
- Article
16
Low-Temperature Processing of Antimony-Implanted Silicon.
- Published in:
- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 767, doi. 10.1007/s11664-004-0238-z
- By:
- Publication type:
- Article