Works matching IS 03615235 AND DT 2004 AND VI 33 AND IP 6

Results: 45

Determination of Individual Layer Composition and Thickness in Multilayer HgCdTe Structures.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 761, doi. 10.1007/s11664-004-0079-9

By:

Daraselia, M.;
Carmody, M.;
Zandian, M.;
Arias, J. M.

Publication type:

Article

Investigations into the Source of 1/f Noise in HgxCd1-xTe Diodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 757, doi. 10.1007/s11664-004-0078-x

By:

Ashby, M. K.;
Gordon, N. T.;
Elliott, C. T.;
Jones, C. L.;
Maxey, C. D.;
Hipwood, L.;
Catchpole, R.

Publication type:

Article

Molecular Beam Epitaxy Growth of High-Quality Arsenic-Doped HgCdTe.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 752, doi. 10.1007/s11664-004-0077-y

By:

Edwall, D.;
Piquette, E.;
Ellsworth, J.;
Arias, J.;
Swartz, C. H.;
Bai, L.;
Tompkins, R. P.;
Giles, N. C.;
Myers, T. H.;
Berding, M.

Publication type:

Article

Development of the High-Pressure Electro-Dynamic Gradient Crystal-Growth Technology for Semi-Insulating CdZnTe Growth for Radiation Detector Applications.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 742, doi. 10.1007/s11664-004-0076-z

By:

Szeles, Csaba;
Cameron, Scott E.;
Soldner, Stephen A.;
Ndap, Jean-Olivier;
Reed, Michael D.

Publication type:

Article

Concentrations of Native and Gold Defects in HgCdTe from First Principles Calculations.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 737, doi. 10.1007/s11664-004-0075-0

By:

Ciani, Anthony J.;
Ogut, Serdar;
Batra, Inder P.

Publication type:

Article

Fundamental Materials Studies of Undoped, In-Doped, and As-Doped Hg1-xCdxTe.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 728, doi. 10.1007/s11664-004-0074-1

By:

Swartz, C. H.;
Tompkins, R. P.;
Giles, N. C.;
Myers, T. H.;
Edwall, D. D.;
Ellsworth, J.;
Piquette, E.;
Arias, J.;
Berding, M.;
Krishnamurthy, S.;
Vurgaftman, I.;
Meyer, J. R.

Publication type:

Article

Optical Properties of CdSexTe1-x Epitaxial Films Studied by Spectroscopic Ellipsometry.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 724, doi. 10.1007/s11664-004-0073-2

By:

Peiris, F. C.;
Weber, Z. J.;
Chen, Y.;
Brill, G.

Publication type:

Article

Experimental Study of Non-Stoichiometry in Cd1-xZnxTe1±δ.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 719, doi. 10.1007/s11664-004-0072-3

By:

Greenberg, J. H.;
Guskov, V. N.;
Fiederle, M.;
Benz, K.- W.

Publication type:

Article

High-Resolution Mapping of Infrared Photoluminescence.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 714, doi. 10.1007/s11664-004-0071-4

By:

Furstenberg, Robert;
White, Jeffrey O.;
Dinan, John H.;
Olson, Gregory L.

Publication type:

Article

Near-Bandgap Infrared Absorption Properties of HgCdTe.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 709, doi. 10.1007/s11664-004-0070-5

By:

Chang, Y.;
Badano, G.;
Zhao, J.;
Zhou, Y. D.;
Ashokan, R.;
Grein, C. H.;
Nathan, V.

Publication type:

Article

Optical-Absorption Model for Molecular-Beam Epitaxy HgCdTe and Application to Infrared Detector Photoresponse.

Published in:

2004

By:

Moazzami, K.;
Phillips, J.;
Lee, D.;
Edwall, D.;
Carmody, M.;
Piquette, E.;
Zandian, M.;
Arias, J.

Publication type:

Abstract

Study of the Pixel-Pitch Reduction for HgCdTe Infrared Dual-Band Detectors.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 690, doi. 10.1007/s11664-004-0068-z

By:

Baylet, J.;
Gravrand, O.;
Laffosse, E.;
Vergnaud, C.;
Ballerand, S.;
Aventurier, B.;
Deplanche, J. C.;
Ballet, P.;
Castelein, P.;
Chamonal, J. P.;
Million, A.;
Destefanis, G.

Publication type:

Article

Macro-Loading Effects of Electron-Cyclotron Resonance Etched II-VI Materials.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 684, doi. 10.1007/s11664-004-0067-0

By:

Stoltz, A. J.;
Benson, J. D.;
Varesi, J. B.;
Martinka, M.;
Sperry, M. J.;
Kaleczyc, A. W.;
Almeida, L. A.;
Boyd, P. R.;
Dinan, J. H.

Publication type:

Article

Application of Quantitative Mobility-Spectrum Analysis to Multilayer HgCdTe Structures.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 673, doi. 10.1007/s11664-004-0066-1

By:

Antoszewski, J.;
Faraone, L.;
Vurgaftman, I.;
Meyer, J. R.;
Hoffman, C. A.

Publication type:

Article

Dual-Band Infrared Detectors Made on High-Quality HgCdTe Epilayers Grown by Molecular Beam Epitaxy on CdZnTe or CdTe/Ge Substrates.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 667, doi. 10.1007/s11664-004-0065-2

By:

Ballet, P.;
Noël, F.;
Pottier, F.;
Plissard, S.;
Zanatta, J. P.;
Baylet, J.;
Gravrand, O.;
De Borniol, E.;
Martin, S.;
Castelein, P.;
Chamonal, J. P.;
Million, A.;
Destefanis, G.

Publication type:

Article

Physical Structure of Molecular-Beam Epitaxy Growth Defects in HgCdTe and Their Impact on Two-Color Detector Performance.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 662, doi. 10.1007/s11664-004-0064-3

By:

Buell, A. A.;
Pham, L. T.;
Newton, M. D.;
Venzor, G. M.;
Norton, E. M.;
Smith, E. P.;
Varesi, J. B.;
Harper, V. B.;
Johnson, S. M.;
Coussa, R. A.;
De Leon, T.;
Roth, J. A.;
Jensen, J. E.

Publication type:

Article

Differential Thermal Analysis of Supercooling in CdTe.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 658, doi. 10.1007/s11664-004-0063-4

By:

Turkevych, I.;
Franc, J.;
Grill, R.;
Höschl, P.;
Belas, E.;
Moravec, P.

Publication type:

Article

ZnO Nanotips Grown on Si Substrates by Metal-Organic Chemical-Vapor Deposition.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 654, doi. 10.1007/s11664-004-0062-5

By:

Zhong, J.;
Muthukumar, S.;
Saraf, G.;
Chen, H.;
Chen, Y.;
Lu, Y.

Publication type:

Article

Growth of Large-Diameter ZnTe Single Crystals by Liquid-Encapsulated Melt Growth Methods.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 651, doi. 10.1007/s11664-004-0061-6

By:

Asahi, T.;
Yabe, T.;
Sato, K.

Publication type:

Article

Growth of Thick CdTe Epilayers on GaAs Substrates and Evaluation of CdTe/n+ -GaAs Heterojunction Diodes for an X-ray Imaging Detector.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 645, doi. 10.1007/s11664-004-0060-7

By:

Niraula, M.;
Yasuda, K.;
Nakanishi, Y.;
Uchida, K.;
Mabuchi, T.;
Agata, Y.;
Suzuki, K.

Publication type:

Article

Distribution of the High Resistivity Region in CdZnTe and Its Effects on Gamma-Ray Detector Performance.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 640, doi. 10.1007/s11664-004-0059-0

By:

Terterian, S.;
Chu, M.;
Ting, D.

Publication type:

Article

HgCdTe Electron Avalanche Photodiodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 630, doi. 10.1007/s11664-004-0058-1

By:

Kinch, M. A.;
Beck, J. D.;
Wan, C.- F.;
Ma, F.;
Campbell, J.

Publication type:

Article

Dark Currents in Long Wavelength Infrared HgCdTe Gated Photodiodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 621, doi. 10.1007/s11664-004-0057-2

By:

Nguyen, T.;
Musca, C. A.;
Dell, J. M.;
Antoszewski, J.;
Faraone, L.

Publication type:

Article

Performance Characteristics of Planar Ion-Implantation Isolated Heterojunction, Near-Infrared, and Short-Wave Infrared HgCdTe Devices.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 615, doi. 10.1007/s11664-004-0056-3

By:

Terterian, S.;
Chu, M.;
Mesropian, S.;
Gurgenian, H.;
Benson, J. D.;
Dinan, J. H.

Publication type:

Article

Advanced Thermoelectrically Cooled Midwave HgCdTe Focal Plane Arrays.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 609, doi. 10.1007/s11664-004-0055-4

By:

Chu, Muren;
Mesropian, S.;
Terterian, S.;
Gurgenian, H. K.;
Pauli, M.

Publication type:

Article

Resonant Cavity-Enhanced Mercury Cadmium Telluride Detectors.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 604, doi. 10.1007/s11664-004-0054-5

By:

Wehner, J. G. A.;
Nguyen, T. N.;
Antoszewski, J.;
Musca, C. A.;
Dell, J. M.;
Faraone, L.

Publication type:

Article

A 5 mm x 5 mm Mid-Wavelength Infrared HgCdTe Photodiode Array with Negative Luminescence Efficiency ∼95%.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 600, doi. 10.1007/s11664-004-0053-6

By:

Lindle, J. R.;
Bewley, W. W.;
Vurgaftman, I.;
Meyer, J. R.;
Johnson, J. L.;
Thomas, M. L.;
Piquette, E. C.;
Tennant, W. E.

Publication type:

Article

Li Diffusion in Epitaxial (1120) ZnO Thin Films.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 596, doi. 10.1007/s11664-004-0052-7

By:

Wu, P.;
Zhong, J.;
Emanetoglu, N. W.;
Chen, Y.;
Muthukumar, S.;
Lu, Y.

Publication type:

Article

Arsenic-Doped Mid-Wavelength Infrared HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 590, doi. 10.1007/s11664-004-0051-8

By:

Kinch, M. A.;
Chandra, D.;
Schaake, H. F.;
Shih, H.- D.;
Aqariden, F.

Publication type:

Article

In-Situ Ellipsometry Studies of Adsorption of Hg on CdTe(211)B/Si(211) and Molecular Beam Epitaxy Growth of HgCdTe(211)B.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 583, doi. 10.1007/s11664-004-0050-9

By:

Badano, G.;
Chang, Y.;
Garland, J. W.;
Sivananthan, S.

Publication type:

Article

Annealing Effects of a High-Quality ZnTe Substrate.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 579, doi. 10.1007/s11664-004-0049-2

By:

Yoshino, Kenji;
Yoneta, Minoru;
Ohmori, Kenzo;
Saito, Hiroshi;
Ohishi, Masakazu;
Yabe, Takayuki

Publication type:

Article

Laser-Beam-Induced Current Mapping of Spatial Nonuniformities in Molecular Beam Epitaxy As-Grown HgCdTe.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 572, doi. 10.1007/s11664-004-0048-3

By:

Sewell, R. H.;
Musca, C. A.;
Antoszewski, J.;
Dell, J. M.;
Faraone, L.

Publication type:

Article

Correlation of Laser-Beam-Induced Current with Current-Voltage Measurements in HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 560, doi. 10.1007/s11664-004-0047-4

By:

Redfern, D. A.;
Musca, C. A.;
Dell, J. M.;
Faraone, L.

Publication type:

Article

Wet-Chemical Etching of (1120) ZnO Films.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 556, doi. 10.1007/s11664-004-0046-5

By:

Zhu, J.;
Emanetoglu, N. W.;
Chen, Y.;
Yakshinskiy, B. V.;
Lu, Y.

Publication type:

Article

Wafer Bonding of (211) Cd0.96Zn0.04Te on (001) Silicon.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 552, doi. 10.1007/s11664-004-0045-6

By:

Miclaus, C.;
Malouf, G.;
Johnson, S. M.;
Rhiger, D. R.;
Goorsky, M. S.

Publication type:

Article

Determination of the Ion Angular Distribution for Electron Cyclotron Resonance, Plasma-Etched HgCdTe Trenches.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 543, doi. 10.1007/s11664-004-0044-7

By:

Benson, J. D.;
Stoltz, A. J.;
Varesi, J. B.;
Martinka, M.;
Kaleczyc, A. W.;
Almeida, L. A.;
Boyd, P. R.;
Dinan, J. H.

Publication type:

Article

Processing and Characterization of a-Si:H Photoresists for a Vacuum-Compatible Photolithography Process.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 538, doi. 10.1007/s11664-004-0043-8

By:

Jacobs, R. N.;
Stoltz, A. J.;
Robinson, E. W.;
Boyd, P. R.;
Almeida, L. A.;
Dinan, J. H.;
Salamanca-Riba, L.

Publication type:

Article

Long Wavelength Infrared, Molecular Beam Epitaxy, HgCdTe-on-Si Diode Performance.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 531, doi. 10.1007/s11664-004-0042-9

By:

Carmody, M.;
Pasko, J. G.;
Edwall, D.;
Daraselia, M.;
Almeida, L. A.;
Molstad, J.;
Dinan, J. H.;
Markunas, J. K.;
Chen, Y.;
Brill, G.;
Dhar, N. K.

Publication type:

Article

HgCdTe/Si Materials for Long Wavelength Infrared Detectors.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 526, doi. 10.1007/s11664-004-0041-x

By:

Johnson, S. M.;
Buell, A. A.;
Vilela, M. F.;
Peterson, J. M.;
Varesi, J. B.;
Newton, M. D.;
Venzor, G. M.;
Bornfreund, R. E.;
Radford, W. A.;
Smith, E. P. G.;
Rosbeck, J. P.;
De Lyon, T. J.;
Jensen, J. E.;
Nathan, V.

Publication type:

Article

Spectral Crosstalk by Radiative Recombination in Sequential-Mode, Dual Mid-Wavelength Infrared Band HgCdTe Detectors.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 517, doi. 10.1007/s11664-004-0040-y

By:

Coussa, R. A.;
Gallagher, A. M.;
Kosai, K.;
Pham, L. T.;
Pierce, G. K.;
Smith, E. P.;
Venzor, G. M.;
De Lyon, T. J.;
Jensen, J. E.;
Nosho, B. Z.;
Roth, J. A.;
Waterman, J. R.

Publication type:

Article

HgCdTe Focal Plane Arrays for Dual-Color Mid- and Long-Wavelength Infrared Detection.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 509, doi. 10.1007/s11664-004-0039-4

By:

Smith, E. P. G.;
Pham, L. T.;
Venzor, G. M.;
Norton, E. M.;
Newton, M. D.;
Goetz, P. M.;
Randall, V. K.;
Gallagher, A. M.;
Pierce, G. K.;
Patten, E. A.;
Coussa, R. A.;
Kosai, K.;
Radford, W. A.;
Giegerich, L. M.;
Edwards, J. M.;
Johnson, S. M.;
Baur, S. T.;
Roth, J. A.;
Nosho, B.;
De Lyon, T. J.

Publication type:

Article

HgTe/HgCdTe Superlattices Grown on CdTe/Si by Molecular Beam Epitaxy for Infrared Detection.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 503, doi. 10.1007/s11664-004-0038-5

By:

Selamet, Y.;
Zhou, Y. D.;
Zhao, J.;
Chang, Y.;
Becker, C. R.;
Ashokan, R.;
Grein, C. H.;
Sivananthan, S.

Publication type:

Article

Molecular Beam Epitaxial Growth of Cd1-yZnySexTe1-x on Si(211).

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 498, doi. 10.1007/s11664-004-0037-6

By:

Chen, Y. P.;
Brill, G.;
Campo, E. M.;
Hierl, T.;
Hwang, J. C. M.;
Dhar, N. K.

Publication type:

Article

Feasibility Study of Cadmium Zinc Telluride Growth Using a Submerged Heater in a Vertical Bridgman System.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 488, doi. 10.1007/s11664-004-0036-7

By:

Yeckel, Andrew;
Derby, Jeffrey J.

Publication type:

Article

Foreword.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 487, doi. 10.1007/s11664-004-0035-8

By:

Sivananthan, S.;
Dhar, N. K.;
Anter, Y.

Publication type:

Article