Works matching IS 03615235 AND DT 2004 AND VI 33 AND IP 6

Results: 45

Determination of Individual Layer Composition and Thickness in Multilayer HgCdTe Structures.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 761, doi. 10.1007/s11664-004-0079-9
By:
- Daraselia, M.;
- Carmody, M.;
- Zandian, M.;
- Arias, J. M.
Publication type:
Article
Investigations into the Source of 1/f Noise in HgxCd1-xTe Diodes.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 757, doi. 10.1007/s11664-004-0078-x
By:
- Ashby, M. K.;
- Gordon, N. T.;
- Elliott, C. T.;
- Jones, C. L.;
- Maxey, C. D.;
- Hipwood, L.;
- Catchpole, R.
Publication type:
Article
Molecular Beam Epitaxy Growth of High-Quality Arsenic-Doped HgCdTe.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 752, doi. 10.1007/s11664-004-0077-y
By:
- Edwall, D.;
- Piquette, E.;
- Ellsworth, J.;
- Arias, J.;
- Swartz, C. H.;
- Bai, L.;
- Tompkins, R. P.;
- Giles, N. C.;
- Myers, T. H.;
- Berding, M.
Publication type:
Article
Development of the High-Pressure Electro-Dynamic Gradient Crystal-Growth Technology for Semi-Insulating CdZnTe Growth for Radiation Detector Applications.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 742, doi. 10.1007/s11664-004-0076-z
By:
- Szeles, Csaba;
- Cameron, Scott E.;
- Soldner, Stephen A.;
- Ndap, Jean-Olivier;
- Reed, Michael D.
Publication type:
Article
Concentrations of Native and Gold Defects in HgCdTe from First Principles Calculations.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 737, doi. 10.1007/s11664-004-0075-0
By:
- Ciani, Anthony J.;
- Ogut, Serdar;
- Batra, Inder P.
Publication type:
Article
Fundamental Materials Studies of Undoped, In-Doped, and As-Doped Hg1-xCdxTe.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 728, doi. 10.1007/s11664-004-0074-1
By:
- Swartz, C. H.;
- Tompkins, R. P.;
- Giles, N. C.;
- Myers, T. H.;
- Edwall, D. D.;
- Ellsworth, J.;
- Piquette, E.;
- Arias, J.;
- Berding, M.;
- Krishnamurthy, S.;
- Vurgaftman, I.;
- Meyer, J. R.
Publication type:
Article
Optical Properties of CdSexTe1-x Epitaxial Films Studied by Spectroscopic Ellipsometry.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 724, doi. 10.1007/s11664-004-0073-2
By:
- Peiris, F. C.;
- Weber, Z. J.;
- Chen, Y.;
- Brill, G.
Publication type:
Article
Experimental Study of Non-Stoichiometry in Cd1-xZnxTe1±δ.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 719, doi. 10.1007/s11664-004-0072-3
By:
- Greenberg, J. H.;
- Guskov, V. N.;
- Fiederle, M.;
- Benz, K.- W.
Publication type:
Article
High-Resolution Mapping of Infrared Photoluminescence.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 714, doi. 10.1007/s11664-004-0071-4
By:
- Furstenberg, Robert;
- White, Jeffrey O.;
- Dinan, John H.;
- Olson, Gregory L.
Publication type:
Article
Near-Bandgap Infrared Absorption Properties of HgCdTe.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 709, doi. 10.1007/s11664-004-0070-5
By:
- Chang, Y.;
- Badano, G.;
- Zhao, J.;
- Zhou, Y. D.;
- Ashokan, R.;
- Grein, C. H.;
- Nathan, V.
Publication type:
Article
Optical-Absorption Model for Molecular-Beam Epitaxy HgCdTe and Application to Infrared Detector Photoresponse.
Published in:
2004
By:
- Moazzami, K.;
- Phillips, J.;
- Lee, D.;
- Edwall, D.;
- Carmody, M.;
- Piquette, E.;
- Zandian, M.;
- Arias, J.
Publication type:
Abstract
Study of the Pixel-Pitch Reduction for HgCdTe Infrared Dual-Band Detectors.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 690, doi. 10.1007/s11664-004-0068-z
By:
- Baylet, J.;
- Gravrand, O.;
- Laffosse, E.;
- Vergnaud, C.;
- Ballerand, S.;
- Aventurier, B.;
- Deplanche, J. C.;
- Ballet, P.;
- Castelein, P.;
- Chamonal, J. P.;
- Million, A.;
- Destefanis, G.
Publication type:
Article
Macro-Loading Effects of Electron-Cyclotron Resonance Etched II-VI Materials.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 684, doi. 10.1007/s11664-004-0067-0
By:
- Stoltz, A. J.;
- Benson, J. D.;
- Varesi, J. B.;
- Martinka, M.;
- Sperry, M. J.;
- Kaleczyc, A. W.;
- Almeida, L. A.;
- Boyd, P. R.;
- Dinan, J. H.
Publication type:
Article
Application of Quantitative Mobility-Spectrum Analysis to Multilayer HgCdTe Structures.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 673, doi. 10.1007/s11664-004-0066-1
By:
- Antoszewski, J.;
- Faraone, L.;
- Vurgaftman, I.;
- Meyer, J. R.;
- Hoffman, C. A.
Publication type:
Article
Physical Structure of Molecular-Beam Epitaxy Growth Defects in HgCdTe and Their Impact on Two-Color Detector Performance.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 662, doi. 10.1007/s11664-004-0064-3
By:
- Buell, A. A.;
- Pham, L. T.;
- Newton, M. D.;
- Venzor, G. M.;
- Norton, E. M.;
- Smith, E. P.;
- Varesi, J. B.;
- Harper, V. B.;
- Johnson, S. M.;
- Coussa, R. A.;
- De Leon, T.;
- Roth, J. A.;
- Jensen, J. E.
Publication type:
Article
Dual-Band Infrared Detectors Made on High-Quality HgCdTe Epilayers Grown by Molecular Beam Epitaxy on CdZnTe or CdTe/Ge Substrates.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 667, doi. 10.1007/s11664-004-0065-2
By:
- Ballet, P.;
- Noël, F.;
- Pottier, F.;
- Plissard, S.;
- Zanatta, J. P.;
- Baylet, J.;
- Gravrand, O.;
- De Borniol, E.;
- Martin, S.;
- Castelein, P.;
- Chamonal, J. P.;
- Million, A.;
- Destefanis, G.
Publication type:
Article
Differential Thermal Analysis of Supercooling in CdTe.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 658, doi. 10.1007/s11664-004-0063-4
By:
- Turkevych, I.;
- Franc, J.;
- Grill, R.;
- Höschl, P.;
- Belas, E.;
- Moravec, P.
Publication type:
Article
ZnO Nanotips Grown on Si Substrates by Metal-Organic Chemical-Vapor Deposition.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 654, doi. 10.1007/s11664-004-0062-5
By:
- Zhong, J.;
- Muthukumar, S.;
- Saraf, G.;
- Chen, H.;
- Chen, Y.;
- Lu, Y.
Publication type:
Article
Growth of Large-Diameter ZnTe Single Crystals by Liquid-Encapsulated Melt Growth Methods.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 651, doi. 10.1007/s11664-004-0061-6
By:
- Asahi, T.;
- Yabe, T.;
- Sato, K.
Publication type:
Article
Growth of Thick CdTe Epilayers on GaAs Substrates and Evaluation of CdTe/n+ -GaAs Heterojunction Diodes for an X-ray Imaging Detector.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 645, doi. 10.1007/s11664-004-0060-7
By:
- Niraula, M.;
- Yasuda, K.;
- Nakanishi, Y.;
- Uchida, K.;
- Mabuchi, T.;
- Agata, Y.;
- Suzuki, K.
Publication type:
Article
Distribution of the High Resistivity Region in CdZnTe and Its Effects on Gamma-Ray Detector Performance.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 640, doi. 10.1007/s11664-004-0059-0
By:
- Terterian, S.;
- Chu, M.;
- Ting, D.
Publication type:
Article
HgCdTe Electron Avalanche Photodiodes.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 630, doi. 10.1007/s11664-004-0058-1
By:
- Kinch, M. A.;
- Beck, J. D.;
- Wan, C.- F.;
- Ma, F.;
- Campbell, J.
Publication type:
Article
Dark Currents in Long Wavelength Infrared HgCdTe Gated Photodiodes.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 621, doi. 10.1007/s11664-004-0057-2
By:
- Nguyen, T.;
- Musca, C. A.;
- Dell, J. M.;
- Antoszewski, J.;
- Faraone, L.
Publication type:
Article
Performance Characteristics of Planar Ion-Implantation Isolated Heterojunction, Near-Infrared, and Short-Wave Infrared HgCdTe Devices.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 615, doi. 10.1007/s11664-004-0056-3
By:
- Terterian, S.;
- Chu, M.;
- Mesropian, S.;
- Gurgenian, H.;
- Benson, J. D.;
- Dinan, J. H.
Publication type:
Article
Advanced Thermoelectrically Cooled Midwave HgCdTe Focal Plane Arrays.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 609, doi. 10.1007/s11664-004-0055-4
By:
- Chu, Muren;
- Mesropian, S.;
- Terterian, S.;
- Gurgenian, H. K.;
- Pauli, M.
Publication type:
Article
Resonant Cavity-Enhanced Mercury Cadmium Telluride Detectors.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 604, doi. 10.1007/s11664-004-0054-5
By:
- Wehner, J. G. A.;
- Nguyen, T. N.;
- Antoszewski, J.;
- Musca, C. A.;
- Dell, J. M.;
- Faraone, L.
Publication type:
Article
A 5 mm x 5 mm Mid-Wavelength Infrared HgCdTe Photodiode Array with Negative Luminescence Efficiency ∼95%.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 600, doi. 10.1007/s11664-004-0053-6
By:
- Lindle, J. R.;
- Bewley, W. W.;
- Vurgaftman, I.;
- Meyer, J. R.;
- Johnson, J. L.;
- Thomas, M. L.;
- Piquette, E. C.;
- Tennant, W. E.
Publication type:
Article
Li Diffusion in Epitaxial (1120) ZnO Thin Films.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 596, doi. 10.1007/s11664-004-0052-7
By:
- Wu, P.;
- Zhong, J.;
- Emanetoglu, N. W.;
- Chen, Y.;
- Muthukumar, S.;
- Lu, Y.
Publication type:
Article
Arsenic-Doped Mid-Wavelength Infrared HgCdTe Photodiodes.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 590, doi. 10.1007/s11664-004-0051-8
By:
- Kinch, M. A.;
- Chandra, D.;
- Schaake, H. F.;
- Shih, H.- D.;
- Aqariden, F.
Publication type:
Article
In-Situ Ellipsometry Studies of Adsorption of Hg on CdTe(211)B/Si(211) and Molecular Beam Epitaxy Growth of HgCdTe(211)B.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 583, doi. 10.1007/s11664-004-0050-9
By:
- Badano, G.;
- Chang, Y.;
- Garland, J. W.;
- Sivananthan, S.
Publication type:
Article
Annealing Effects of a High-Quality ZnTe Substrate.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 579, doi. 10.1007/s11664-004-0049-2
By:
- Yoshino, Kenji;
- Yoneta, Minoru;
- Ohmori, Kenzo;
- Saito, Hiroshi;
- Ohishi, Masakazu;
- Yabe, Takayuki
Publication type:
Article
Laser-Beam-Induced Current Mapping of Spatial Nonuniformities in Molecular Beam Epitaxy As-Grown HgCdTe.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 572, doi. 10.1007/s11664-004-0048-3
By:
- Sewell, R. H.;
- Musca, C. A.;
- Antoszewski, J.;
- Dell, J. M.;
- Faraone, L.
Publication type:
Article
Correlation of Laser-Beam-Induced Current with Current-Voltage Measurements in HgCdTe Photodiodes.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 560, doi. 10.1007/s11664-004-0047-4
By:
- Redfern, D. A.;
- Musca, C. A.;
- Dell, J. M.;
- Faraone, L.
Publication type:
Article
Wet-Chemical Etching of (1120) ZnO Films.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 556, doi. 10.1007/s11664-004-0046-5
By:
- Zhu, J.;
- Emanetoglu, N. W.;
- Chen, Y.;
- Yakshinskiy, B. V.;
- Lu, Y.
Publication type:
Article
Wafer Bonding of (211) Cd0.96Zn0.04Te on (001) Silicon.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 552, doi. 10.1007/s11664-004-0045-6
By:
- Miclaus, C.;
- Malouf, G.;
- Johnson, S. M.;
- Rhiger, D. R.;
- Goorsky, M. S.
Publication type:
Article
Determination of the Ion Angular Distribution for Electron Cyclotron Resonance, Plasma-Etched HgCdTe Trenches.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 543, doi. 10.1007/s11664-004-0044-7
By:
- Benson, J. D.;
- Stoltz, A. J.;
- Varesi, J. B.;
- Martinka, M.;
- Kaleczyc, A. W.;
- Almeida, L. A.;
- Boyd, P. R.;
- Dinan, J. H.
Publication type:
Article
Processing and Characterization of a-Si:H Photoresists for a Vacuum-Compatible Photolithography Process.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 538, doi. 10.1007/s11664-004-0043-8
By:
- Jacobs, R. N.;
- Stoltz, A. J.;
- Robinson, E. W.;
- Boyd, P. R.;
- Almeida, L. A.;
- Dinan, J. H.;
- Salamanca-Riba, L.
Publication type:
Article
Long Wavelength Infrared, Molecular Beam Epitaxy, HgCdTe-on-Si Diode Performance.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 531, doi. 10.1007/s11664-004-0042-9
By:
- Carmody, M.;
- Pasko, J. G.;
- Edwall, D.;
- Daraselia, M.;
- Almeida, L. A.;
- Molstad, J.;
- Dinan, J. H.;
- Markunas, J. K.;
- Chen, Y.;
- Brill, G.;
- Dhar, N. K.
Publication type:
Article
HgCdTe/Si Materials for Long Wavelength Infrared Detectors.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 526, doi. 10.1007/s11664-004-0041-x
By:
- Johnson, S. M.;
- Buell, A. A.;
- Vilela, M. F.;
- Peterson, J. M.;
- Varesi, J. B.;
- Newton, M. D.;
- Venzor, G. M.;
- Bornfreund, R. E.;
- Radford, W. A.;
- Smith, E. P. G.;
- Rosbeck, J. P.;
- De Lyon, T. J.;
- Jensen, J. E.;
- Nathan, V.
Publication type:
Article
Spectral Crosstalk by Radiative Recombination in Sequential-Mode, Dual Mid-Wavelength Infrared Band HgCdTe Detectors.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 517, doi. 10.1007/s11664-004-0040-y
By:
- Coussa, R. A.;
- Gallagher, A. M.;
- Kosai, K.;
- Pham, L. T.;
- Pierce, G. K.;
- Smith, E. P.;
- Venzor, G. M.;
- De Lyon, T. J.;
- Jensen, J. E.;
- Nosho, B. Z.;
- Roth, J. A.;
- Waterman, J. R.
Publication type:
Article
HgCdTe Focal Plane Arrays for Dual-Color Mid- and Long-Wavelength Infrared Detection.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 509, doi. 10.1007/s11664-004-0039-4
By:
- Smith, E. P. G.;
- Pham, L. T.;
- Venzor, G. M.;
- Norton, E. M.;
- Newton, M. D.;
- Goetz, P. M.;
- Randall, V. K.;
- Gallagher, A. M.;
- Pierce, G. K.;
- Patten, E. A.;
- Coussa, R. A.;
- Kosai, K.;
- Radford, W. A.;
- Giegerich, L. M.;
- Edwards, J. M.;
- Johnson, S. M.;
- Baur, S. T.;
- Roth, J. A.;
- Nosho, B.;
- De Lyon, T. J.
Publication type:
Article
HgTe/HgCdTe Superlattices Grown on CdTe/Si by Molecular Beam Epitaxy for Infrared Detection.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 503, doi. 10.1007/s11664-004-0038-5
By:
- Selamet, Y.;
- Zhou, Y. D.;
- Zhao, J.;
- Chang, Y.;
- Becker, C. R.;
- Ashokan, R.;
- Grein, C. H.;
- Sivananthan, S.
Publication type:
Article
Molecular Beam Epitaxial Growth of Cd1-yZnySexTe1-x on Si(211).
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 498, doi. 10.1007/s11664-004-0037-6
By:
- Chen, Y. P.;
- Brill, G.;
- Campo, E. M.;
- Hierl, T.;
- Hwang, J. C. M.;
- Dhar, N. K.
Publication type:
Article
Feasibility Study of Cadmium Zinc Telluride Growth Using a Submerged Heater in a Vertical Bridgman System.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 488, doi. 10.1007/s11664-004-0036-7
By:
- Yeckel, Andrew;
- Derby, Jeffrey J.
Publication type:
Article
Foreword.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 6, p. 487, doi. 10.1007/s11664-004-0035-8
By:
- Sivananthan, S.;
- Dhar, N. K.;
- Anter, Y.
Publication type:
Article