Works matching IS 03615235 AND DT 2004 AND VI 33 AND IP 5

Results: 21

Characterization of 3C-SiC Thin Films Grown on Si Surfaces Patterned with Various Periods and Depths.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. L11, doi. 10.1007/s11664-004-0208-5

By:

Hwang, S.-Y.;
Park, J.-H.;
Song, H. J.;
Jang, S. J.;
Su Hwan Oh;
Moon Ho Park;
Kim, J.-H.;
Lee, B.-T.

Publication type:

Article

Electro-Chemical Mechanical Polishing of Silicon Carbide.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 481, doi. 10.1007/s11664-004-0207-6

By:

Canhua Li;
Bhat, Ishwara B.;
Rongjun Wang;
Seiler, Joseph

Publication type:

Article

SiC Via Holes by Laser Drilling.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 477, doi. 10.1007/s11664-004-0206-7

By:

Kim, S.;
Bang, B. S.;
Ren, F.;
D'entremont, J.;
Blumenfeld, W.;
Cordock, T.;
Pearton, S. J.

Publication type:

Article

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 472, doi. 10.1007/s11664-004-0205-8

By:

Twigg, M. E.;
Stahlbush, R. E.;
Fatemi, M.;
Arthur, S. D.;
Fedison, J. B.;
Tucker, J. B.;
Wang, S.

Publication type:

Article

Optical and Electrical Characterization of (Ga,Mn)N/InGaN Multiquantum Well Light-Emitting Diodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 467, doi. 10.1007/s11664-004-0204-9

By:

Buyanova, I. A.;
Izadifard, M.;
Storasta, L.;
Chen, W. M.;
Kim, Jihyun;
Ren, F.;
Thaler, G.;
Abernathy, C. R.;
Pearton, S. J.;
Pan, C.-C.;
Chen, G.-T.;
Chyi, J.-I.;
Zavada, J. M.

Publication type:

Article

Correlation between the Electrical Properties and the Interfacial Microstructures of TiAl-Based Ohmic Contacts to p-Type 4H-SiC.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 460, doi. 10.1007/s11664-004-0203-x

By:

Tsukimoto, S.;
Nitta, K.;
Sakai, T.;
Moriyama, M.;
Murakami, Masanori

Publication type:

Article

Electrical Characteristics of a 6H-SiC Epitaxial Layer Grown by Chemical Vapor Deposition on Porous SiC Substrate.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 456, doi. 10.1007/s11664-004-0202-y

By:

Fang, Z.-Q.;
Look, D. C.;
Chandrasekaran, R.;
Rao, S.;
Saddow, S. E.

Publication type:

Article

Nondestructive Defect Characterization of SiC Substrates and Epilayers.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 450, doi. 10.1007/s11664-004-0201-z

By:

Xianyun Ma;
Sudarshan, Tangali

Publication type:

Article

Mg Fluctuation in p-GaN Layers and Its Effects on InGaN/GaN Blue Light-Emitting Diodes Dependent on p-GaN Growth Temperature.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 445, doi. 10.1007/s11664-004-0200-0

By:

Kim, C. S.;
Cho, H. K.;
Yoo, M. K.;
Cheong, H. S.;
Hong, C.-H.

Publication type:

Article

Vanadium-Based Ohmic Contacts to n-Type Al0.6Ga0.4N.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 418, doi. 10.1007/s11664-004-0194-7

By:

Wang, J. H.;
Mohney, S. E.;
Wang, S. H.;
Chowdhury, U.;
Dupuis, R. D.

Publication type:

Article

Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and after Passivation.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 436

By:

Bernát, J.;
Javorka, P.;
Fox, A.;
Marso, M.;
Kordoš, P.

Publication type:

Article

Phonon-Assisted Deep Level Luminescence in Heavily Mg-Doped InGaN.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 431, doi. 10.1007/s11664-004-0197-4

By:

Han, B.;
Ulmer, M. P.;
Wessels, B. W.

Publication type:

Article

Lateral Schottky GaN Rectifiers Formed by Si+ Ion Implantation.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 426, doi. 10.1007/s11664-004-0196-5

By:

Irokawa, Y.;
Jihyun Kim;
Ren, F.;
Baik, K. H.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Pan, C.-C.;
Chen, G.-T.;
Chyi, J.-I.

Publication type:

Article

Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 422, doi. 10.1007/s11664-004-0195-6

By:

Shen, L.;
Coffie, R.;
Buttari, D.;
Heikman, S.;
Chakraborty, A.;
Chini, A.;
Keller, S.;
Denbaars, S. P.;
Mishra, U. K.

Publication type:

Article

The Influence of Composition and Unintentional Doping on the Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 440, doi. 10.1007/s11664-004-0199-2

By:

Davidsson, S. K.;
Gurusinghe, M.;
Andersson, T. G.;
Zirath, H.

Publication type:

Article

Characterization of Multiple Carriers in GaN Using Variable Magnetic-Field Hall Measurements.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 412, doi. 10.1007/s11664-004-0193-8

By:

Swartz, C. H.;
Tompkins, R. P.;
Myers, T. H.;
Look, D. C.;
Sizelove, J. R.

Publication type:

Article

Time-Dependent Degradation of AlGaN/GaN Heterostructures Grown on Silicon Carbide.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 408, doi. 10.1007/s11664-004-0192-9

By:

Gotthold, David W.;
Guo, S. P.;
Birkhahn, R.;
Albert, B.;
Florescu, D.;
Peres, B.

Publication type:

Article

Influence of Dual-Frequency Plasma-Enhanced Chemical-Vapor Deposition Si3N4 Passivation on the Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 400, doi. 10.1007/s11664-004-0191-x

By:

Tan, W. S.;
Houston, P. A.;
Hill, G.;
Airey, R. J.;
Parbook, P. J.

Publication type:

Article

Electrical and Structural Properties of Low-Resistance Ti/AI/Re/Au Ohmic Contacts to n-type GaN.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 395, doi. 10.1007/s11664-004-0190-y

By:

Reddy, V.;
Sang-Ho Kim;
Tae-Yeon Seong

Publication type:

Article

Hydride Vapor-Phase Epitaxial GaN Thick Films for Quasi-Substrate Applications: Strain Distribution and Wafer Bending.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 389, doi. 10.1007/s11664-004-0189-4

By:

Paskova, T.;
Darakchieva, V.;
Valcheva, E.;
Paskov, P. P.;
Ivanov, I. G.;
Monemar, B.;
Böttcher, T.;
Roder, C.;
Hommel, D.

Publication type:

Article

Optical and Electrical Properties of AIGaN Films Implanted with Mn, Co, or Cr.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 384, doi. 10.1007/s11664-004-0188-5

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Frazier, R. M.;
Thaler, G. T.;
Abernathy, C. R.;
Pearton, S. J.;
Zavada, J. M.;
Wilson, R. G.

Publication type:

Article

Works matching IS 03615235 AND DT 2004 AND VI 33 AND IP 5

Characterization of 3C-SiC Thin Films Grown on Si Surfaces Patterned with Various Periods and Depths.

Electro-Chemical Mechanical Polishing of Silicon Carbide.

SiC Via Holes by Laser Drilling.

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes.

Optical and Electrical Characterization of (Ga,Mn)N/InGaN Multiquantum Well Light-Emitting Diodes.

Correlation between the Electrical Properties and the Interfacial Microstructures of TiAl-Based Ohmic Contacts to p-Type 4H-SiC.

Electrical Characteristics of a 6H-SiC Epitaxial Layer Grown by Chemical Vapor Deposition on Porous SiC Substrate.

Nondestructive Defect Characterization of SiC Substrates and Epilayers.

Mg Fluctuation in p-GaN Layers and Its Effects on InGaN/GaN Blue Light-Emitting Diodes Dependent on p-GaN Growth Temperature.

Vanadium-Based Ohmic Contacts to n-Type Al<sub>0.6</sub>Ga<sub>0.4</sub>N.

Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and after Passivation.

Phonon-Assisted Deep Level Luminescence in Heavily Mg-Doped InGaN.

Lateral Schottky GaN Rectifiers Formed by Si<sup>+</sup> Ion Implantation.

Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design.

The Influence of Composition and Unintentional Doping on the Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructures.

Characterization of Multiple Carriers in GaN Using Variable Magnetic-Field Hall Measurements.

Time-Dependent Degradation of AlGaN/GaN Heterostructures Grown on Silicon Carbide.

Influence of Dual-Frequency Plasma-Enhanced Chemical-Vapor Deposition Si<sub>3</sub>N<sub>4</sub> Passivation on the Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors.

Electrical and Structural Properties of Low-Resistance Ti/AI/Re/Au Ohmic Contacts to n-type GaN.

Hydride Vapor-Phase Epitaxial GaN Thick Films for Quasi-Substrate Applications: Strain Distribution and Wafer Bending.

Optical and Electrical Properties of AIGaN Films Implanted with Mn, Co, or Cr.