Works matching IS 03615235 AND DT 2004 AND VI 33 AND IP 5

Results: 21

Characterization of 3C-SiC Thin Films Grown on Si Surfaces Patterned with Various Periods and Depths.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. L11, doi. 10.1007/s11664-004-0208-5
By:
- Hwang, S.-Y.;
- Park, J.-H.;
- Song, H. J.;
- Jang, S. J.;
- Su Hwan Oh;
- Moon Ho Park;
- Kim, J.-H.;
- Lee, B.-T.
Publication type:
Article
Electro-Chemical Mechanical Polishing of Silicon Carbide.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 481, doi. 10.1007/s11664-004-0207-6
By:
- Canhua Li;
- Bhat, Ishwara B.;
- Rongjun Wang;
- Seiler, Joseph
Publication type:
Article
SiC Via Holes by Laser Drilling.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 477, doi. 10.1007/s11664-004-0206-7
By:
- Kim, S.;
- Bang, B. S.;
- Ren, F.;
- D'entremont, J.;
- Blumenfeld, W.;
- Cordock, T.;
- Pearton, S. J.
Publication type:
Article
The Influence of Composition and Unintentional Doping on the Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructures.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 440, doi. 10.1007/s11664-004-0199-2
By:
- Davidsson, S. K.;
- Gurusinghe, M.;
- Andersson, T. G.;
- Zirath, H.
Publication type:
Article
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 472, doi. 10.1007/s11664-004-0205-8
By:
- Twigg, M. E.;
- Stahlbush, R. E.;
- Fatemi, M.;
- Arthur, S. D.;
- Fedison, J. B.;
- Tucker, J. B.;
- Wang, S.
Publication type:
Article
Correlation between the Electrical Properties and the Interfacial Microstructures of TiAl-Based Ohmic Contacts to p-Type 4H-SiC.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 460, doi. 10.1007/s11664-004-0203-x
By:
- Tsukimoto, S.;
- Nitta, K.;
- Sakai, T.;
- Moriyama, M.;
- Murakami, Masanori
Publication type:
Article
Electrical Characteristics of a 6H-SiC Epitaxial Layer Grown by Chemical Vapor Deposition on Porous SiC Substrate.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 456, doi. 10.1007/s11664-004-0202-y
By:
- Fang, Z.-Q.;
- Look, D. C.;
- Chandrasekaran, R.;
- Rao, S.;
- Saddow, S. E.
Publication type:
Article
Nondestructive Defect Characterization of SiC Substrates and Epilayers.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 450, doi. 10.1007/s11664-004-0201-z
By:
- Xianyun Ma;
- Sudarshan, Tangali
Publication type:
Article
Mg Fluctuation in p-GaN Layers and Its Effects on InGaN/GaN Blue Light-Emitting Diodes Dependent on p-GaN Growth Temperature.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 445, doi. 10.1007/s11664-004-0200-0
By:
- Kim, C. S.;
- Cho, H. K.;
- Yoo, M. K.;
- Cheong, H. S.;
- Hong, C.-H.
Publication type:
Article
Optical and Electrical Characterization of (Ga,Mn)N/InGaN Multiquantum Well Light-Emitting Diodes.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 467, doi. 10.1007/s11664-004-0204-9
By:
- Buyanova, I. A.;
- Izadifard, M.;
- Storasta, L.;
- Chen, W. M.;
- Kim, Jihyun;
- Ren, F.;
- Thaler, G.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Pan, C.-C.;
- Chen, G.-T.;
- Chyi, J.-I.;
- Zavada, J. M.
Publication type:
Article
Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and after Passivation.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 436
By:
- Bernát, J.;
- Javorka, P.;
- Fox, A.;
- Marso, M.;
- Kordoš, P.
Publication type:
Article
Lateral Schottky GaN Rectifiers Formed by Si+ Ion Implantation.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 426, doi. 10.1007/s11664-004-0196-5
By:
- Irokawa, Y.;
- Jihyun Kim;
- Ren, F.;
- Baik, K. H.;
- Gila, B. P.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Pan, C.-C.;
- Chen, G.-T.;
- Chyi, J.-I.
Publication type:
Article
Phonon-Assisted Deep Level Luminescence in Heavily Mg-Doped InGaN.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 431, doi. 10.1007/s11664-004-0197-4
By:
- Han, B.;
- Ulmer, M. P.;
- Wessels, B. W.
Publication type:
Article
Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 422, doi. 10.1007/s11664-004-0195-6
By:
- Shen, L.;
- Coffie, R.;
- Buttari, D.;
- Heikman, S.;
- Chakraborty, A.;
- Chini, A.;
- Keller, S.;
- Denbaars, S. P.;
- Mishra, U. K.
Publication type:
Article
Vanadium-Based Ohmic Contacts to n-Type Al0.6Ga0.4N.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 418, doi. 10.1007/s11664-004-0194-7
By:
- Wang, J. H.;
- Mohney, S. E.;
- Wang, S. H.;
- Chowdhury, U.;
- Dupuis, R. D.
Publication type:
Article
Characterization of Multiple Carriers in GaN Using Variable Magnetic-Field Hall Measurements.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 412, doi. 10.1007/s11664-004-0193-8
By:
- Swartz, C. H.;
- Tompkins, R. P.;
- Myers, T. H.;
- Look, D. C.;
- Sizelove, J. R.
Publication type:
Article
Time-Dependent Degradation of AlGaN/GaN Heterostructures Grown on Silicon Carbide.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 408, doi. 10.1007/s11664-004-0192-9
By:
- Gotthold, David W.;
- Guo, S. P.;
- Birkhahn, R.;
- Albert, B.;
- Florescu, D.;
- Peres, B.
Publication type:
Article
Influence of Dual-Frequency Plasma-Enhanced Chemical-Vapor Deposition Si3N4 Passivation on the Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 400, doi. 10.1007/s11664-004-0191-x
By:
- Tan, W. S.;
- Houston, P. A.;
- Hill, G.;
- Airey, R. J.;
- Parbook, P. J.
Publication type:
Article
Electrical and Structural Properties of Low-Resistance Ti/AI/Re/Au Ohmic Contacts to n-type GaN.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 395, doi. 10.1007/s11664-004-0190-y
By:
- Reddy, V.;
- Sang-Ho Kim;
- Tae-Yeon Seong
Publication type:
Article
Hydride Vapor-Phase Epitaxial GaN Thick Films for Quasi-Substrate Applications: Strain Distribution and Wafer Bending.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 389, doi. 10.1007/s11664-004-0189-4
By:
- Paskova, T.;
- Darakchieva, V.;
- Valcheva, E.;
- Paskov, P. P.;
- Ivanov, I. G.;
- Monemar, B.;
- Böttcher, T.;
- Roder, C.;
- Hommel, D.
Publication type:
Article
Optical and Electrical Properties of AIGaN Films Implanted with Mn, Co, or Cr.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 5, p. 384, doi. 10.1007/s11664-004-0188-5
By:
- Polyakov, A. Y.;
- Smirnov, N. B.;
- Govorkov, A. V.;
- Frazier, R. M.;
- Thaler, G. T.;
- Abernathy, C. R.;
- Pearton, S. J.;
- Zavada, J. M.;
- Wilson, R. G.
Publication type:
Article

Works matching IS 03615235 AND DT 2004 AND VI 33 AND IP 5

Characterization of 3C-SiC Thin Films Grown on Si Surfaces Patterned with Various Periods and Depths.

Electro-Chemical Mechanical Polishing of Silicon Carbide.

SiC Via Holes by Laser Drilling.

The Influence of Composition and Unintentional Doping on the Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructures.

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes.

Correlation between the Electrical Properties and the Interfacial Microstructures of TiAl-Based Ohmic Contacts to p-Type 4H-SiC.

Electrical Characteristics of a 6H-SiC Epitaxial Layer Grown by Chemical Vapor Deposition on Porous SiC Substrate.

Nondestructive Defect Characterization of SiC Substrates and Epilayers.

Mg Fluctuation in p-GaN Layers and Its Effects on InGaN/GaN Blue Light-Emitting Diodes Dependent on p-GaN Growth Temperature.

Optical and Electrical Characterization of (Ga,Mn)N/InGaN Multiquantum Well Light-Emitting Diodes.

Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and after Passivation.

Lateral Schottky GaN Rectifiers Formed by Si<sup>+</sup> Ion Implantation.

Phonon-Assisted Deep Level Luminescence in Heavily Mg-Doped InGaN.

Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design.

Vanadium-Based Ohmic Contacts to n-Type Al<sub>0.6</sub>Ga<sub>0.4</sub>N.

Characterization of Multiple Carriers in GaN Using Variable Magnetic-Field Hall Measurements.

Time-Dependent Degradation of AlGaN/GaN Heterostructures Grown on Silicon Carbide.

Influence of Dual-Frequency Plasma-Enhanced Chemical-Vapor Deposition Si<sub>3</sub>N<sub>4</sub> Passivation on the Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors.

Electrical and Structural Properties of Low-Resistance Ti/AI/Re/Au Ohmic Contacts to n-type GaN.

Hydride Vapor-Phase Epitaxial GaN Thick Films for Quasi-Substrate Applications: Strain Distribution and Wafer Bending.

Optical and Electrical Properties of AIGaN Films Implanted with Mn, Co, or Cr.