Works matching IS 0361-5235 AND VI 54 AND IP 2 AND DT 2025


Results: 55
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    Oxygen Vacancy Defect Engineering on ZnFe<sub>2</sub>O<sub>4</sub>/wt.%CoCr<sub>2</sub>O<sub>4</sub> Heterojunction Toward the Degradation of Tetracycline Hydrochloride.

    Published in:
    Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1186, doi. 10.1007/s11664-024-11639-z
    By:
    • Gao, Huajing;
    • Wang, Shifa;
    • Ramprasad, N.;
    • Li, Dengfeng;
    • Zhou, Xianju;
    • Li, Li;
    • Al-Enizi, Abdullah M.;
    • Ubaidullah, Mohd;
    • Manjunatha, K.;
    • Kumar, Ashok;
    • Basavegowda, Nagaraj;
    • Manjunatha, S. O.;
    • Wu, Sheng Yun;
    • Angadi, V. Jagadeesha
    Publication type:
    Article
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    Impact of TiO<sub>2</sub>-Doped Bismuth-Boro-Tellurite Glasses: Fabrication, Physical and Optical Properties, and γ-Ray Protection Competence for Optical and Radiation Shielding Applications: Impact of TiO<sub>2</sub>-Doped Bismuth-Boro-Tellurite Glasses: Fabrication, Physical and Optical...: H. Al-Ghamdi et al

    Published in:
    Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1432, doi. 10.1007/s11664-024-11616-6
    By:
    • Al-Ghamdi, Hanan;
    • Alfryyan, Nada;
    • Alsaif, Norah A. M.;
    • Abdelghany, A. M.;
    • Higazy, K. S.;
    • Abouhaswa, A. S.;
    • Rammah, Yasser S.;
    • Kaky, Kawa M.;
    • Kadhim, Abed Jawad;
    • El-Agawany, F. I.
    Publication type:
    Article
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    Photoelectrochemical Study of the Performance Enhancement of CNT-Based Counter Electrodes by Adding N-S Doped rGO in QD Solar Cells: Photoelectrochemical Study of the Performance Enhancement of CNT-Based Counter Electrodes: O. López-Rojas et al.

    Published in:
    Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1141, doi. 10.1007/s11664-024-11606-8
    By:
    • López-Rojas, Omar;
    • del Socorro Aguilar, Ma.;
    • de Jesús Ku-Herrera, José;
    • Jiménez-Barrera, Rosa Martha;
    • López, Victor Hugo;
    • García, Jesús;
    • Reyes-Francis, Emmanuel;
    • Zarazúa, Isaac;
    • López-Luke, Tzarara
    Publication type:
    Article
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    Improved Ferroelectric Effects and Gate Controllability in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Gated InAlGaN/GaN MIS-HEMTs Using ZrO<sub>2</sub> Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Gated...: Tien-Han Yu et al

    Published in:
    Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1096, doi. 10.1007/s11664-024-11600-0
    By:
    • Yu, Tien-Han;
    • Chen, Yu-Lin;
    • Tsao, Yi-Fan;
    • Hsu, Chin-Tsai;
    • Lu, Tsan-Feng;
    • Hsu, Heng-Tung
    Publication type:
    Article
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    Influence of Sintering Temperature on Structural and Electrical Properties: Dy<sub>0.4</sub>Sm<sub>0.6</sub>FeO<sub>3</sub> Orthoferrite: Influence of Sintering Temperature on Structural and Electrical Properties: Dy<sub>0.4</sub>Sm<sub>0.6</sub>FeO<sub>3</sub>...: S. Yelipeddy et al

    Published in:
    Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1085, doi. 10.1007/s11664-024-11596-7
    By:
    • Yelipeddy, Sreedhar;
    • Vankudothu, Nagendar;
    • Raju, N.;
    • Reddy, M. Sreenath;
    • Reddy, C. H. Gopal;
    • Reddy, P. Yadagiri
    Publication type:
    Article
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    Synthesis, Dielectric and Magnetic Properties of Mn<sup>+2</sup>-Substituted Y-Type Hexagonal Ferrites: Prospects for Microwave Absorption Applications: Synthesis, Dielectric and Magnetic Properties of Mn<sup>+2</sup>-Substituted...: Asif, Saeed, Ahmad, Shah, Amin, Shoukat, Alfagham, Elgorban and Nisa

    Published in:
    Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1393, doi. 10.1007/s11664-024-11581-0
    By:
    • Asif, Muhammad;
    • Saeed, Rehan;
    • Ahmad, Usman;
    • Shah, M. A. K. Yousaf;
    • Amin, Muhammad Abdullah;
    • Shoukat, Zahid;
    • Alfagham, Alanoud T.;
    • Elgorban, Abdallah M.;
    • Nisa, Mehar Un
    Publication type:
    Article
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