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Extended Defects in SiC: Selective Etching and Raman Study.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5039, doi. 10.1007/s11664-023-10272-6
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Investigation of Comet-Shaped Defects in an EPI-InP Layer Grown on S-Doped and Fe-Doped InP Substrates.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5047, doi. 10.1007/s11664-023-10259-3
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Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5053, doi. 10.1007/s11664-023-10309-w
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Reduced Threading Dislocation Density in a Ge Epitaxial Film on a Submicron-Patterned Si Substrate Grown by Chemical Vapor Deposition.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5059, doi. 10.1007/s11664-023-10302-3
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Trench-Filling Epitaxy of Germanium on (001) Silicon Enhanced Using [100]-Oriented Patterns.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5066, doi. 10.1007/s11664-023-10306-z
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Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5075, doi. 10.1007/s11664-023-10336-7
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Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5084, doi. 10.1007/s11664-023-10343-8
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Relationship Between Propagation Angle of Dislocations in β-Ga<sub>2</sub>O<sub>3</sub> (001) Bulk Wafers and Their Etch Pit Shapes.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5093, doi. 10.1007/s11664-023-10363-4
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Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5099, doi. 10.1007/s11664-023-10348-3
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Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5109, doi. 10.1007/s11664-023-10440-8
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Crystalline Morphology of SiGe Films Grown on Si(110) Substrates.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5121, doi. 10.1007/s11664-023-10425-7
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Inelastic X-ray Scattering Measurement on Single-Crystalline GeSn Thin Film.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5128, doi. 10.1007/s11664-023-10421-x
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- Article
Low-Temperature Growth of ZnMgO Thin Films by Atmospheric Spin-Coating Using Diethylzinc Solution.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5134, doi. 10.1007/s11664-023-10475-x
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Evaluation of Strain-Relaxation of Carbon-Doped Silicon Nanowires and Its Crystal Orientation Dependence Using X-Ray Diffraction Reciprocal Space Mapping.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5140, doi. 10.1007/s11664-023-10497-5
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Analysis of InGaAs/InP p-I-n Photodiode Failed by Electrostatic Discharge.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5150, doi. 10.1007/s11664-023-10502-x
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Electrical Properties of Silicon Oxide Layers Subjected to High-Temperature Treatment Reproducing the Growth Conditions for Thin Carbon Films.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5159, doi. 10.1007/s11664-023-10498-4
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Excitation Transfer from Cr<sup>2+</sup> to Fe<sup>2+</sup> Ions in Co-doped ZnSe as a Pumping Scheme for Infrared Solid-State Lasers.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5166, doi. 10.1007/s11664-023-10496-6
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Experimental Study on the Photoelastic Coefficient and Its Wavelength Dispersion for Quantitative Imaging of Residual Strain in Commercial SiC Substrates.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5172, doi. 10.1007/s11664-023-10473-z
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Investigation of Doping Processes to Achieve Highly Doped Czochralski Germanium Ingots.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5178, doi. 10.1007/s11664-023-10534-3
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Comparison of Outdoor and Indoor PL and EL Images in Si Solar Cells and Panels for Defect Detection and Classification.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5189, doi. 10.1007/s11664-023-10535-2
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Construction of Small FeS<sub>2</sub> Nanoparticles Embedded in Porous Nitrogen-Doped Carbon with Enhanced Sodium Ion Storage Properties.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5199, doi. 10.1007/s11664-023-10503-w
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Optimizing Electrical, Magnetic, and Magnetoelectric Characteristics of Ba<sub>0.85</sub>Sr<sub>0.15</sub>TiO<sub>3</sub>–Ni<sub>0.75</sub>Zn<sub>0.25</sub>Fe<sub>2</sub>O<sub>4</sub> Core-Shell Ceramic.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5210, doi. 10.1007/s11664-023-10538-z
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A Two-Dimensional MoS<sub>2</sub> Device and CMOS Inverter Based on the Plasma Immersion Doping Technique.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5218, doi. 10.1007/s11664-023-10462-2
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Two-Dimensional ZnS Quantum Dots for Gas Sensors: Electronic and Adsorption Properties.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5227, doi. 10.1007/s11664-023-10455-1
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Frequency Response Characterization of Thin-Film Shape Memory Alloy Actuator for Reconfigurable Antenna.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5239, doi. 10.1007/s11664-023-10485-9
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High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5249, doi. 10.1007/s11664-023-10499-3
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Cr-Photocrosslinked Polyvinylpyrrolidone Memristor: A Flexible, Rapid Manufacturing and Disposable Polymeric Electronic Memory Device.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5256, doi. 10.1007/s11664-023-10472-0
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Optoelectronic and Hydrogen Gas-Sensing Applications of Ultrasonically Fabricated ZnO-Au Nanoparticle-Decorated MWCNTs.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5264, doi. 10.1007/s11664-023-10495-7
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Effective Improvement of the Photovoltaic Performance of Lead-Free Perovskite Solar Cells Employing a Mixture of DMSO and Activated Carbon Powder as Counter Electrode: A Combined Experimental and DFT Study.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5272, doi. 10.1007/s11664-023-10464-0
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High-Efficiency Tandem OLED with Multiple Buffer Layers to Enhance Electron Injection and Transmission.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5287, doi. 10.1007/s11664-023-10487-7
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The Failure Mechanism of Common-Mode Chip Inductors.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5297, doi. 10.1007/s11664-022-10105-y
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Study of Electronic Synaptic Characteristics in PVA Organic Field-Effect Transistors.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5307, doi. 10.1007/s11664-023-10508-5
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Modeling of Electrical Characteristics of Thin-Film Transistors Based P3HT:ZnO Blend: Channel Length Layer Effect.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5315, doi. 10.1007/s11664-023-10469-9
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Comparative Investigation of Different Doping Techniques in TMD Tunnel FET for Subdeca Nanometer Technology Nodes.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5327, doi. 10.1007/s11664-023-10505-8
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High-Resolution Temperature Sensor Based on Resonance Excitation of Tamm Plasmon Polaritons: Graphene Plasmon Polariton Hybrid Mode.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5337, doi. 10.1007/s11664-023-10494-8
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Band Gap Tuning of AGNRs Within the Atmospheric IR Windows.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5345, doi. 10.1007/s11664-023-10459-x
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- Article
Suppressing Dendrite Growth with Quasi-liquid Anode in Solid-State Sodium Metal Batteries Enabled by the Design of Na-K Alloying Strategy.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5352, doi. 10.1007/s11664-023-10504-9
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Application of Doped Clay by Plasmonic Nanoparticles in the Suzuki–Miyaura Cross-Coupling Reaction.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5362, doi. 10.1007/s11664-023-10468-w
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Bioinspired Bacterial Cellulose Carbon Nanofibers/AgO Composite for Sensitive and Selective Detection of H<sub>2</sub>O<sub>2</sub> Vapor at Room Temperature.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5377, doi. 10.1007/s11664-023-10456-0
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- Article
Defect-Induced Control on Current Conduction of Cobalt-Doped BiFeO<sub>3</sub> Thin-Film Devices.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5388, doi. 10.1007/s11664-023-10481-z
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- Article
Tuning Thermoelectric Properties of Spin-Coated Cu<sub>2</sub>SnS<sub>3</sub> Thin Films by Annealing.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5396, doi. 10.1007/s11664-023-10424-8
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Organic and Hybrid Diode Features of an n-Type 1,8-Naphthalimide Derivative.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5401, doi. 10.1007/s11664-023-10450-6
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Effects of Phosphating Treatment on the Growth of a Phosphate Layer and the Magnetic Properties of Fe-Based Amorphous Magnetic Powder Cores.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5412, doi. 10.1007/s11664-023-10437-3
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Tailoring the Back Contact Properties of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> Thin Film with Mo-Foil by Introducing a Transparent CuCrO<sub>2</sub> Buffer Layer.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5422, doi. 10.1007/s11664-023-10491-x
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Strain Engineering on the Optoelectronic Properties of CsPbI<sub>3</sub> Halide Perovskites: Ab-Initio Investigation.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5430, doi. 10.1007/s11664-023-10476-w
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Effects of Sintering Behavior, Structure, Packing Fraction, and Bond Valence on the Microwave Dielectric Properties of Low-Permittivity Na<sub>2</sub>Ba<sub>6</sub>Si<sub>4</sub>O<sub>15</sub> Ceramics.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5440, doi. 10.1007/s11664-023-10489-5
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A p-Si/CoPc Hybrid Photodiode System for Looking at Frequency and Temperature Dependence on Dielectric Relaxation and AC Electrical Conductivity.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5449, doi. 10.1007/s11664-023-10460-4
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Promotion of GaN Crystal Growth with Pre-stirring Using the Na-Flux Method.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5466, doi. 10.1007/s11664-023-10480-0
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Effect of Aliovalent Doping on the Thermoelectric Performance of Double Half-Heusler Alloys.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5473, doi. 10.1007/s11664-023-10478-8
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- Article
Superconducting and Normal State Properties of Spray-Pyrolyzed YBCO Thin Films.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5485, doi. 10.1007/s11664-023-10466-y
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- Article