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Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4640, doi. 10.1007/s11664-016-4466-9
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Hole Transport in Arsenic-Doped HgCdTe with x ≥ 0.5.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4686, doi. 10.1007/s11664-016-4474-9
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CdTe Photovoltaics for Sustainable Electricity Generation.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4612, doi. 10.1007/s11664-016-4484-7
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Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4557, doi. 10.1007/s11664-016-4506-5
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Dry etched SiO Mask for HgCdTe Etching Process.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4705, doi. 10.1007/s11664-016-4479-4
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Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4524, doi. 10.1007/s11664-016-4481-x
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Multispectral Detection with Metal-Dielectric Filters: An Investigation in Several Wavelength Bands with Temporal Coupled-Mode Theory.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4603, doi. 10.1007/s11664-016-4475-8
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Hybrid Hamiltonian and Green's Function Approach for Studying Native Point Defect Levels in Semiconductor Compounds and Superlattices.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4574, doi. 10.1007/s11664-016-4494-5
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- Article
A Failure Mode in Dense Infrared Detector Arrays Resulting in Increased Dark Current.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4631, doi. 10.1007/s11664-016-4476-7
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HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4532, doi. 10.1007/s11664-016-4516-3
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- Article
Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4518, doi. 10.1007/s11664-016-4522-5
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- Article
High-Quality AgGaTe Layers on Si Substrates with AgTe Buffer Layers.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4692, doi. 10.1007/s11664-016-4548-8
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- Article
Confirmation of Auger-1 Minority-Carrier Lifetimes in HgCdTe and Prediction of Dark Current for Long-Wave Infrared Focal-Plane Arrays.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4511, doi. 10.1007/s11664-016-4535-0
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Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4668, doi. 10.1007/s11664-016-4544-z
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- Article
Analysis of III-V Superlattice nB n Device Characteristics.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4646, doi. 10.1007/s11664-016-4545-y
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- Article
MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4542, doi. 10.1007/s11664-016-4523-4
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Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4711, doi. 10.1007/s11664-016-4556-8
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Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4596, doi. 10.1007/s11664-016-4558-6
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- Article
High-Operating Temperature HgCdTe: A Vision for the Near Future.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4587, doi. 10.1007/s11664-016-4566-6
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Estimation of Thickness and Cadmium Composition Distributions in HgCdTe Focal Plane Arrays.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4607, doi. 10.1007/s11664-016-4586-2
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Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4654, doi. 10.1007/s11664-016-4602-6
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Opto-electronic Properties of Mid-Wavelength: n Type II InAs/InAsSb and HgCdTe.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4697, doi. 10.1007/s11664-016-4738-4
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High-Temperature Characteristics of an InAsSb/AlAsSb nBn Detector.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4680, doi. 10.1007/s11664-016-4633-z
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Effect of Lattice Mismatch on HgCdTe LPE Film Surface Morphology.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4674, doi. 10.1007/s11664-016-4637-8
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- Article
Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4497, doi. 10.1007/s11664-016-4640-0
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- Article
Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4620, doi. 10.1007/s11664-016-4717-9
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Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4552, doi. 10.1007/s11664-016-4606-2
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- Article
Dynamics of Kinetically Limited Strain and Threading Dislocations in Temperature- and Compositionally Graded ZnSSe/GaAs (001) Metamorphic Heterostructures.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4580, doi. 10.1007/s11664-016-4659-2
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Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4563, doi. 10.1007/s11664-016-4702-3
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Analysis of Etched CdZnTe Substrates.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4502, doi. 10.1007/s11664-016-4642-y
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Band Offsets of III-V and II-VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4626, doi. 10.1007/s11664-016-4729-5
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Surface Leakage Mechanisms in III-V Infrared Barrier Detectors.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4663, doi. 10.1007/s11664-016-4451-3
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Passivation Effect of Atomic Layer Deposition of AlO Film on HgCdTe Infrared Detectors.
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- Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4716, doi. 10.1007/s11664-016-4686-z
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