Found: 20
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Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1255, doi. 10.1007/s11664-014-3456-z
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- Article
AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1263, doi. 10.1007/s11664-014-3474-x
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- Article
Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1268, doi. 10.1007/s11664-014-3497-3
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- Article
Thermal Resistance Extraction of AlGaN/GaN Depletion-Mode HEMTs on Diamond.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1275, doi. 10.1007/s11664-014-3515-5
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- Article
Defect-Related Luminescence in Undoped GaN Grown by HVPE.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1281, doi. 10.1007/s11664-014-3540-4
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- Article
Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1287, doi. 10.1007/s11664-015-3677-9
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- Article
Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1293, doi. 10.1007/s11664-014-3536-0
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- Article
Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1300, doi. 10.1007/s11664-015-3658-z
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- Article
Gettering of Luminescent Point Defects along Step Bunching in 4H-SiC Epitaxial Layers by Ultraviolet Excitation.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1306, doi. 10.1007/s11664-014-3616-1
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- Article
Effects of Lattice Relaxation on Composition and Morphology in Strained InGaAsSb Epitaxial Layers.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1311, doi. 10.1007/s11664-015-3662-3
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- Article
Low Temperature, Rapid Thermal Cycle Annealing of HgCdTe Grown on CdTe/Si.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1321, doi. 10.1007/s11664-014-3542-2
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- Article
Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1327, doi. 10.1007/s11664-015-3625-8
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- Article
Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1332, doi. 10.1007/s11664-014-3565-8
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- Article
Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001).
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1338, doi. 10.1007/s11664-014-3583-6
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- Article
Comparison of Gas Sensors Based on Oxygen Plasma-Treated Carbon Nanotube Network Films with Different Semiconducting Contents.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1344, doi. 10.1007/s11664-014-3586-3
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- Article
Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1351, doi. 10.1007/s11664-014-3587-2
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- Article
Large-Area MOCVD Growth of GaO in a Rotating Disc Reactor.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1357, doi. 10.1007/s11664-014-3566-7
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- Article
Improving Metal-Oxide-Metal (MOM) Diode Performance Via the Optimization of the Oxide Layer.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1361, doi. 10.1007/s11664-015-3624-9
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- Article
Novel Materials with Effective Super Dielectric Constants for Energy Storage.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1367, doi. 10.1007/s11664-015-3641-8
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- Article
Effect of Diffusion Control Layer on Reverse Al-Induced Layer Exchange Process for High-Quality Ge/Al/Glass Structure.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1377, doi. 10.1007/s11664-014-3521-7
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- Article