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NaBi: A Robust Material Offering Dirac Electrons for Device Applications.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3215, doi. 10.1007/s11664-015-3802-9
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Effect of Vacuum Heat Treatment on Dielectric Properties of PbO-BaO-NaO-NbO-SiO Glass-Ceramic.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3220, doi. 10.1007/s11664-015-3899-x
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Preparation of Electrically Conductive Polymeric Membranes.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3225, doi. 10.1007/s11664-015-3916-0
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Space-Charge Manipulation Under Sub-bandgap Illumination in Detector-Grade CdZnTe.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3229, doi. 10.1007/s11664-015-3835-0
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Metal Gate (TiN, TiC, TaN) Film Stack Stress.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3236, doi. 10.1007/s11664-015-3897-z
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Study of Surface and Interface Roughness of GaN-Based Films Using Spectral Reflectance Measurements.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3243, doi. 10.1007/s11664-015-3855-9
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Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3253, doi. 10.1007/s11664-015-3886-2
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Characterization of Cross-Sectioned Gallium Nitride High-Electron-Mobility Transistors with In Situ Biasing.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3259, doi. 10.1007/s11664-015-3908-0
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Solid State Reaction and Operational Stability of Ruthenium Schottky Contact-on-6H-SiC Under Argon Annealing.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3265, doi. 10.1007/s11664-015-3873-7
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Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3272, doi. 10.1007/s11664-015-3832-3
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Orientation Dependence of Etch Pit Density in (111) and (211) CdZnTe Everson Etch.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3277, doi. 10.1007/s11664-015-3853-y
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Transmittance Spectra of CuZnSnS Thin Films.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3283, doi. 10.1007/s11664-015-3909-z
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Thin-Film Gallium Antimonide for Room-Temperature Radiation Detection.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3288, doi. 10.1007/s11664-015-3869-3
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Improved Device Performance of Polymer-CuInS/TiO Solar Cells Based on Treated CuInS Quantum Dots.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3294, doi. 10.1007/s11664-015-3903-5
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Photovoltaic Properties of CdSe/CdS and CdS/CdSe Core-Shell Particles Synthesized by Use of Uninterrupted Precipitation Procedures.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3302, doi. 10.1007/s11664-015-3906-2
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Experimental and Theoretical Study of the Mechanoluminescence of ZnS:Mn Nanoparticles.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3312, doi. 10.1007/s11664-015-3911-5
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Nitrogen-Doped GeSb Phase Change Thin Films for High-Temperature Data Retention and High-Speed Application.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3322, doi. 10.1007/s11664-015-3915-1
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Investigation of Structural, Chemical, and Electrical Properties of CdTe/Back Contact Interface by TEM and XPS.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3327, doi. 10.1007/s11664-015-3816-3
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Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a BiSbTe Film Fabricated by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3334, doi. 10.1007/s11664-015-3782-9
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Studies on Spin Orbit Splitting and Dual Mode Phonon Vibrations in ZnSSe Ternary Alloys Films with Varying Se Concentration.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3341, doi. 10.1007/s11664-015-3803-8
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A Simple SbTe Back-Contact Process for CdTe Solar Cells.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3354, doi. 10.1007/s11664-015-3894-2
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Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3360, doi. 10.1007/s11664-015-3892-4
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Preparation, Characterization, and Size Control of Chemically Synthesized CdS Nanoparticles Capped with Poly(ethylene glycol).
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3367, doi. 10.1007/s11664-015-3838-x
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Structural and Optical Properties of GaS Single Crystals Irradiated by Hydrogen.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3375, doi. 10.1007/s11664-015-3904-4
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Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient CuZnSnS Thin-Film Solar Cells.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3380, doi. 10.1007/s11664-015-3849-7
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A 100-V High-Performance SOI Trench LDMOS with Low Cell Pitch.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3388, doi. 10.1007/s11664-015-3834-1
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Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3395, doi. 10.1007/s11664-015-3889-z
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Comparative Study of As-Deposited ZnO Thin Films by Thermal Evaporation, Pulsed Laser Deposition and RF Sputtering Methods for Electronic and Optoelectronic Applications.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3401, doi. 10.1007/s11664-015-3861-y
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Effect of Eu Doping on the Structural, Electrical, and Dielectric Properties of KNaNbO Ceramics for High-Temperature Capacitor Applications.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3408, doi. 10.1007/s11664-015-3905-3
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Effects of ZnO Content on Piezoelectric, Dielectric, and Magnetic Properties of Sr-Modified PZT-PMW-PNN/(Ni-Co-Cu) ME Composites.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3415, doi. 10.1007/s11664-015-3887-1
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Growth, Morphology, and Electrical Characterization of Polyaniline-ZnO Nano-composite Langmuir-Blodgett Thin Films.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3422, doi. 10.1007/s11664-015-3868-4
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Gum Tragacanth-Mediated Synthesis of Nanocrystalline ZnO Powder for Use in Varistors.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3430, doi. 10.1007/s11664-015-3871-9
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Low-Temperature Hydrothermal Synthesis of Green Luminescent Carbon Quantum Dots (CQD), and Optical Properties of Blends of the CQD with Poly(3-hexylthiophene).
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3436, doi. 10.1007/s11664-015-3893-3
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Synthesis and Characterization of YVO-Based Phosphor Doped with Eu Ions for Display Devices.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3444, doi. 10.1007/s11664-015-3884-4
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Synthesis and Optical Properties of CaMgSiO:Ce Phosphors.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3450, doi. 10.1007/s11664-015-3862-x
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Improving the H Gas Sensitivity of ZnO Thin Films by Modifying the Annealing Conditions.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3458, doi. 10.1007/s11664-015-3833-2
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High-Performance Simultaneous Two-Photon Absorption Upconverted Stimulated Single-Component SrVO Phosphor for White LEDs.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3465, doi. 10.1007/s11664-015-3880-8
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MgZnO Thin-Film Transistor-Based UV Photodetector with Enhanced Photoresponse.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3471, doi. 10.1007/s11664-015-3697-5
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Thermoluminescence of β-Irradiated ZnS-ZnO Phosphors.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3477, doi. 10.1007/s11664-015-3809-2
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Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3481, doi. 10.1007/s11664-015-3797-2
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Recrystallization as a Growth Mechanism for Whiskers on Plastically Deformed Sn Films.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3486, doi. 10.1007/s11664-015-3921-3
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Third-Nearest-Neighbors Tight-Binding Description of Optical Response of Carbon Nanotubes: Effects of Chirality and Diameter.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3500, doi. 10.1007/s11664-015-3877-3
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Modification of Chemically Exfoliated Graphene to Produce Efficient Piezoresistive Polystyrene-Graphene Composites.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3512, doi. 10.1007/s11664-015-3799-0
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Influences of Strain Rate and Load Direction on the Thermo-mechanical Behavior of a Nano-Alumina-Containing Copper Alloy Bar.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3523, doi. 10.1007/s11664-015-3810-9
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Study on the Characteristics of an Alkali-Metal Thermoelectric Power Generation System.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3534, doi. 10.1007/s11664-015-3818-1
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Enhanced Thermoelectric Properties of Hole-Doped LuPbBaCoO Ceramics.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3545, doi. 10.1007/s11664-015-3814-5
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Undulate Cu(111) Substrates: A Unique Surface for CVD Graphene Growth.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3550, doi. 10.1007/s11664-015-3804-7
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Thermoelectric Properties of Heavily Doped n-type PbYTe Compounds.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3556, doi. 10.1007/s11664-015-3775-8
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Enhanced Thermoelectric Properties of La-Doped ZrNiSn Half-Heusler Compound.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3563, doi. 10.1007/s11664-015-3882-6
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Performance Optimization of Two-Stage Exoreversible Thermoelectric Converter in Electrically Series and Parallel Configuration.
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- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3571, doi. 10.1007/s11664-015-3890-6
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